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| Patent # | Description |
|---|---|
| 2011/0127593 |
PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode... |
| 2011/0127592 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,
SOLID-STATE IMAGING DEVICE, AND SOLID-STATE... A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a... |
| 2011/0127591 |
METHOD FOR PROGRAMMING AN ANTI-FUSE ELEMENT, AND SEMICONDUCTOR DEVICE A method for programming an anti-fuse element in which the ratio between current values before and after writing is increased to ensure accuracy in making a... |
| 2011/0127590 |
INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY
AN OXYGEN RICH TITANIUM NITRIDE CAP... In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself... |
| 2011/0127589 |
SEMICONDUCTOR STRUCTURE HAIVNG A METAL GATE AND METHOD OF FORMING THE SAME A method of forming a semiconductor structure having a metal gate. Firstly, a semiconductor substrate is provided. Subsequently, at least a gate structure is... |
| 2011/0127588 |
ENHANCING MOSFET PERFORMANCE BY OPTIMIZING STRESS PROPERTIES A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures... |
| 2011/0127587 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench... |
| 2011/0127586 |
Lateral super junction device with high substrate-gate breakdown and
built-in avalanche clamp diode A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+... |
| 2011/0127585 |
LATERAL JUNCTION FIELD-EFFECT TRANSISTOR A lateral junction field-effect transistor capable of preventing the occurrence of leakage current and realizing a sufficient withstand voltage can be provided.... |
| 2011/0127584 |
METHOD FOR MANUFACTURING INFRARED IMAGE SENSOR AND INFRARED IMAGE SENSOR In the method for manufacturing the infrared image sensor, first, a thermal insulation layer (33) is made by forming a silicon dioxide film (31) on a first area... |
| 2011/0127583 |
SEMICONDUCTOR COMPONENT WITH INTEGRATED HALL EFFECT SENSOR A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high... |
| 2011/0127582 |
MULTIPLYING PATTERN DENSITY BY SINGLE SIDEWALL IMAGING TRANSFER A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the... |
| 2011/0127581 |
HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR
PHOTOVOLTAIC COMPONENTS The present invention relates to a support for the epitaxy of a layer of a material of composition Al.sub.xIn.sub.yGa.sub.(1-x-y)N, where 0.ltoreq.x.ltoreq.1,... |
| 2011/0127580 |
CAPACITOR-LESS MEMORY DEVICE Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage... |
| 2011/0127579 |
STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING
THE SEMICONDUCTOR DEVICE One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing... |
| 2011/0127578 |
Manufacturing method for semiconductor device and semiconductor device A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the... |
| 2011/0127577 |
Latch-up free vertical TVS diode array structure using trench isolation A method for manufacturing a transient voltage suppressing (TVS) array substantially following a manufacturing process for manufacturing a vertical... |
| 2011/0127576 |
Bipolar Power Semiconductor Component Comprising a P-type Emitter and More
Highly Doped Zones in the P-type... A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an... |
| 2011/0127575 |
SEMICONDUCTOR DEVICE An n.sup.+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the... |
| 2011/0127574 |
DEVICE FOR PREVENTING CURRENT-LEAKAGE A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing... |
| 2011/0127573 |
BI-DIRECTIONAL TRANSISTOR WITH BY-PASS PATH AND METHOD THEREFOR In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have... |
| 2011/0127572 |
GATED RESONANT TUNNELING DIODE A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably... |
| 2011/0127571 |
MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE
ULTRAVIOLET EMITTERS A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the... |
| 2011/0127570 |
ORGANIC LIGHT EMITTING DIODE DISPLAY Disclosed is an organic light emitting diode (OLED) device, which includes: an organic light emitting diode including a first electrode, a second electrode, and... |
| 2011/0127569 |
LED MODULE An LED module A1 includes an LED chip 1, a lead group 4 including a lead 4A on which the LED chip 1 is mounted and a lead 4B spaced apart from the lead 4A, a... |
| 2011/0127568 |
LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact... |
| 2011/0127567 |
SUPPORTING SUBSTRATE FOR PREPARING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND
SEMICONDUCTOR LIGHT-EMITTING DEVICE... The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting... |
| 2011/0127566 |
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body... |
| 2011/0127565 |
LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first... |
| 2011/0127564 |
METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING COMPONENTS AND
RADIATION-EMITTING COMPONENT A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from... |
| 2011/0127563 |
DIE-BONDING METHOD OF LED CHIP AND LED MANUFACTURED BY THE SAME A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin... |
| 2011/0127562 |
Electronic Substrate Having Low Current Leakage and High Thermal
Conductivity and Associated Methods Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a... |
| 2011/0127561 |
ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME [Problem] The present invention aims to provide an electroluminescence device with an improved intermediate layer, for achieving a superior durability and... |
| 2011/0127560 |
LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTRURING THE SAME An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite... |
| 2011/0127559 |
LIGHT EMISSION DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME A light emission device package including a substrate, an opening portion on the substrate, a heat radiation frame on the opening portion, the heat radiation... |
| 2011/0127558 |
LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME There is provided a light emitting diode package and a method of manufacturing the same. A light emitting diode package according to an aspect of the invention... |
| 2011/0127557 |
LIGHT FIXTURE USING NEAR UV SOLID STATE DEVICE AND REMOTE SEMICONDUCTOR
NANOPHOSPHORS TO PRODUCE WHITE LIGHT For general lighting applications, a semiconductor chip produces near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm.... |
| 2011/0127556 |
ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS An organic light emitting diode lighting apparatus includes: a substrate main body including a sealing area and a sealing line surrounding the sealing area; a... |
| 2011/0127555 |
SOLID STATE LIGHT EMITTER WITH PHOSPHORS DISPERSED IN A LIQUID OR GAS FOR
PRODUCING HIGH CRI WHITE LIGHT A solid state white light emitting device includes a semiconductor chip for producing electromagnetic energy and may additionally include a reflector forming an... |
| 2011/0127554 |
Light emitting device and method of manufacturing the same A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of... |
| 2011/0127553 |
LED UNIT An LED (light emitting diode) unit includes an LED and a lens mounted on the LED. The lens defines a passageway at a central portion thereof. The passageway... |
| 2011/0127552 |
LIGHT OUTPUT DEVICE The present invention relates to a light output device (100) comprising a LED package (4) at least partly embedded in a translucent layer (5) of a thermoplastic... |
| 2011/0127551 |
Method for enhancing electrical injection efficiency and light extraction
efficiency of light-emitting devices A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps... |
| 2011/0127550 |
LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer,... |
| 2011/0127549 |
LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF
FABRICATING THE SAME Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light... |
| 2011/0127548 |
ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE An organic light emitting diode (OLED) display device, including: a base substrate, on which OLEDs are formed; and an encapsulation substrate disposed on the... |
| 2011/0127547 |
CAVITY-ENHANCED MULTISPECTRAL PHOTONIC DEVICES A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified... |
| 2011/0127546 |
REFLECTIVE SECONDARY LENS SYSTEM AND SEMICONDUCTOR ASSEMBLY AND ALSO
METHOD FOR THE PRODUCTION THEREOF The present invention relates to a reflective and/or refractive secondary lens system for focusing sunlight onto semiconductor elements, the secondary lens... |
| 2011/0127545 |
COMPOUND SEMICONDUCTOR DEVICE WITH T-SHAPED GATE ELECTRODE A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and... |
| 2011/0127544 |
GROUP III NITRIDE TEMPLATES AND RELATED HETEROSTRUCTURES, DEVICES, AND
METHODS FOR MAKING THEM A templated substate includes a base layer, and a template layer disposed on the base layer and having a composition including a single-crystal Group Ill... |
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