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Patent # Description
2011/0127593 PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD
A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode...
2011/0127592 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND SOLID-STATE...
A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a...
2011/0127591 METHOD FOR PROGRAMMING AN ANTI-FUSE ELEMENT, AND SEMICONDUCTOR DEVICE
A method for programming an anti-fuse element in which the ratio between current values before and after writing is increased to ensure accuracy in making a...
2011/0127590 INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP...
In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself...
2011/0127589 SEMICONDUCTOR STRUCTURE HAIVNG A METAL GATE AND METHOD OF FORMING THE SAME
A method of forming a semiconductor structure having a metal gate. Firstly, a semiconductor substrate is provided. Subsequently, at least a gate structure is...
2011/0127588 ENHANCING MOSFET PERFORMANCE BY OPTIMIZING STRESS PROPERTIES
A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures...
2011/0127587 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench...
2011/0127586 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+...
2011/0127585 LATERAL JUNCTION FIELD-EFFECT TRANSISTOR
A lateral junction field-effect transistor capable of preventing the occurrence of leakage current and realizing a sufficient withstand voltage can be provided....
2011/0127584 METHOD FOR MANUFACTURING INFRARED IMAGE SENSOR AND INFRARED IMAGE SENSOR
In the method for manufacturing the infrared image sensor, first, a thermal insulation layer (33) is made by forming a silicon dioxide film (31) on a first area...
2011/0127583 SEMICONDUCTOR COMPONENT WITH INTEGRATED HALL EFFECT SENSOR
A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high...
2011/0127582 MULTIPLYING PATTERN DENSITY BY SINGLE SIDEWALL IMAGING TRANSFER
A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the...
2011/0127581 HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS
The present invention relates to a support for the epitaxy of a layer of a material of composition Al.sub.xIn.sub.yGa.sub.(1-x-y)N, where 0.ltoreq.x.ltoreq.1,...
2011/0127580 CAPACITOR-LESS MEMORY DEVICE
Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage...
2011/0127579 STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing...
2011/0127578 Manufacturing method for semiconductor device and semiconductor device
A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the...
2011/0127577 Latch-up free vertical TVS diode array structure using trench isolation
A method for manufacturing a transient voltage suppressing (TVS) array substantially following a manufacturing process for manufacturing a vertical...
2011/0127576 Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type...
A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an...
2011/0127575 SEMICONDUCTOR DEVICE
An n.sup.+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the...
2011/0127574 DEVICE FOR PREVENTING CURRENT-LEAKAGE
A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing...
2011/0127573 BI-DIRECTIONAL TRANSISTOR WITH BY-PASS PATH AND METHOD THEREFOR
In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have...
2011/0127572 GATED RESONANT TUNNELING DIODE
A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably...
2011/0127571 MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE ULTRAVIOLET EMITTERS
A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the...
2011/0127570 ORGANIC LIGHT EMITTING DIODE DISPLAY
Disclosed is an organic light emitting diode (OLED) device, which includes: an organic light emitting diode including a first electrode, a second electrode, and...
2011/0127569 LED MODULE
An LED module A1 includes an LED chip 1, a lead group 4 including a lead 4A on which the LED chip 1 is mounted and a lead 4B spaced apart from the lead 4A, a...
2011/0127568 LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact...
2011/0127567 SUPPORTING SUBSTRATE FOR PREPARING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE...
The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting...
2011/0127566 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body...
2011/0127565 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first...
2011/0127564 METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING COMPONENTS AND RADIATION-EMITTING COMPONENT
A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from...
2011/0127563 DIE-BONDING METHOD OF LED CHIP AND LED MANUFACTURED BY THE SAME
A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin...
2011/0127562 Electronic Substrate Having Low Current Leakage and High Thermal Conductivity and Associated Methods
Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a...
2011/0127561 ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME
[Problem] The present invention aims to provide an electroluminescence device with an improved intermediate layer, for achieving a superior durability and...
2011/0127560 LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTRURING THE SAME
An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite...
2011/0127559 LIGHT EMISSION DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME
A light emission device package including a substrate, an opening portion on the substrate, a heat radiation frame on the opening portion, the heat radiation...
2011/0127558 LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME
There is provided a light emitting diode package and a method of manufacturing the same. A light emitting diode package according to an aspect of the invention...
2011/0127557 LIGHT FIXTURE USING NEAR UV SOLID STATE DEVICE AND REMOTE SEMICONDUCTOR NANOPHOSPHORS TO PRODUCE WHITE LIGHT
For general lighting applications, a semiconductor chip produces near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm....
2011/0127556 ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS
An organic light emitting diode lighting apparatus includes: a substrate main body including a sealing area and a sealing line surrounding the sealing area; a...
2011/0127555 SOLID STATE LIGHT EMITTER WITH PHOSPHORS DISPERSED IN A LIQUID OR GAS FOR PRODUCING HIGH CRI WHITE LIGHT
A solid state white light emitting device includes a semiconductor chip for producing electromagnetic energy and may additionally include a reflector forming an...
2011/0127554 Light emitting device and method of manufacturing the same
A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of...
2011/0127553 LED UNIT
An LED (light emitting diode) unit includes an LED and a lens mounted on the LED. The lens defines a passageway at a central portion thereof. The passageway...
2011/0127552 LIGHT OUTPUT DEVICE
The present invention relates to a light output device (100) comprising a LED package (4) at least partly embedded in a translucent layer (5) of a thermoplastic...
2011/0127551 Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices
A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps...
2011/0127550 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer,...
2011/0127549 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME
Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light...
2011/0127548 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE
An organic light emitting diode (OLED) display device, including: a base substrate, on which OLEDs are formed; and an encapsulation substrate disposed on the...
2011/0127547 CAVITY-ENHANCED MULTISPECTRAL PHOTONIC DEVICES
A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified...
2011/0127546 REFLECTIVE SECONDARY LENS SYSTEM AND SEMICONDUCTOR ASSEMBLY AND ALSO METHOD FOR THE PRODUCTION THEREOF
The present invention relates to a reflective and/or refractive secondary lens system for focusing sunlight onto semiconductor elements, the secondary lens...
2011/0127545 COMPOUND SEMICONDUCTOR DEVICE WITH T-SHAPED GATE ELECTRODE
A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and...
2011/0127544 GROUP III NITRIDE TEMPLATES AND RELATED HETEROSTRUCTURES, DEVICES, AND METHODS FOR MAKING THEM
A templated substate includes a base layer, and a template layer disposed on the base layer and having a composition including a single-crystal Group Ill...
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