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| Patent # | Description |
|---|---|
| 2011/0136362 |
JOINT-PACK INTEGRATED SPACERS A joint pack includes one or more phase members that utilize integrated standoff spacers that protrude and come into contact with opposing conductor plates to... |
| 2011/0136361 |
Light String System A lamp system used in a light string system comprises a light assembly and a socket assembly. The light assembly comprises a light source, a base in... |
| 2011/0136360 |
ELECTRICAL CARD CONNECTOR An electrical card connector (100) includes a receiving space (10) for receiving an electrical card, and includes an insulative housing (1) and an ejecting... |
| 2011/0136359 |
GUITAR END PIN JACK PLUG A guitar end pin jack plug device is described which is mated with an end pin jack while the electrical plug is not mated with the end pin jack, for the purpose... |
| 2011/0136358 |
SAFETY STRUCTURE FOR ELECTRIC RECEPTACLES AND POWER STRIPS A symmetrically movable safety structure disposed inside of an upper lid of a power panel, includes a cover plate disposed with a jack corresponding to the... |
| 2011/0136357 |
DATA STORAGE DEVICE AND PRINTING APPARATUS INCLUDING THE SAME A data storage device is provided. At least a storage section configured to store information therein and a connection terminal configured to transmit... |
| 2011/0136356 |
FLASH MEMORY DEVICE WITH SLIDABLE CONTACT MODULE A flash memory device includes a circuit board and a contact module slidable with respect to the circuit board. The circuit board includes a plurality of first... |
| 2011/0136355 |
Port Attached To Flexible Mount A system including a flexible mount that can be coupled to a computing device. A port can be attached to the flexible mount. The flexible mount can conform to... |
| 2011/0136354 |
ELECTRICAL PLUG HAVING ADJUSTABLE PRONGS An electrical plug is provided. The plug includes a base, a cover, a live prong, a neutral prong, and a ground prong. The cover defines a first hole, a second... |
| 2011/0136353 |
APPARATUS AND METHOD FOR SCALABLE POWER DISTRIBUTION In one aspect, the invention provides a system for power distribution. According to some embodiments, the system includes a rack mountable power distribution... |
| 2011/0136352 |
USB DEVICE A USB device is provided. The USB device includes a housing, a circuit board, a chip, a USB connector and a metal connector. The circuit board is disposed in... |
| 2011/0136351 |
MAGNETIC CONNECTOR FOR ELECTRONIC DEVICE An electrical plug and receptacle relying on magnetic force from an electromagnet to maintain contact are disclosed. The plug and receptacle can be used as part... |
| 2011/0136350 |
Magnetic and Locking Cable Connectors In embodiments of the present invention improved capabilities are described for a cable connector. The cable connector may have magnetic properties and/or a... |
| 2011/0136349 |
FLEXIBLE BATTERY CONNECTOR A battery connector including an electrical connector including a plurality of terminals, each mechanically and electrically connectable with a battery, the... |
| 2011/0136348 |
PHONON-ENHANCED CRYSTAL GROWTH AND LATTICE HEALING A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at... |
| 2011/0136347 |
POINT-OF-USE SILYLAMINE GENERATION The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine... |
| 2011/0136346 |
Substantially Non-Oxidizing Plasma Treatment Devices and Processes Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating... |
| 2011/0136345 |
Process for the Manufacture of Etched Items C4 compounds selected from the group of trifluorobutadienes and tetrafluorobutenes can be used as etching gases, especially for anisotropic etching in the... |
| 2011/0136344 |
COMPOSITION AND METHOD FOR POLISHING POLYSILICON The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an... |
| 2011/0136343 |
COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF
SILICON-CONTAINING FILMS This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300.degree. C.) chemical vapor... |
| 2011/0136342 |
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating... |
| 2011/0136341 |
FIELD EFFECT TRANSISTOR HAVING MULTIPLE PINCH OFF VOLTAGES A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor... |
| 2011/0136340 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE A method of fabricating a semiconductor device facilitates the forming of a conductive pattern of features having different widths. A conductive layer is formed... |
| 2011/0136339 |
CONDUCTOR STRUCTURE INCLUDING MANGANESE OXIDE CAPPING LAYER A microelectronic structure includes a dielectric layer located over a substrate. The dielectric layer is separated from a copper containing conductor layer by... |
| 2011/0136338 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via... |
| 2011/0136337 |
Method for Manufacturing Semiconductor Device A method for manufacturing a semiconductor device. The method includes forming an energy cured resin layer on a semiconductor substrate having an electrode pad... |
| 2011/0136336 |
METHODS OF FORMING CONDUCTIVE VIAS Methods of forming a conductive via may include forming a blind via hole partially through a substrate, forming an aluminum film on surfaces of the substrate,... |
| 2011/0136335 |
Semiconductor Device with Improved Contacts A device with a solder joint made of a copper contact pad (210) of certain area (202) and an alloy layer (301) metallurgically attached to the copper pad across... |
| 2011/0136334 |
METHOD OF FORMING AT LEAST ONE BONDING STRUCTURE A method of forming at least one bonding structure may be provided. A ball may be formed on the front end of a wire outside a capillary. The capillary may be... |
| 2011/0136333 |
SEMICONDUCTOR MATERIALS AND METHODS OF PREPARATION AND USE THEREOF Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current... |
| 2011/0136332 |
METHODS OF FORMING INTEGRATED CIRCUIT DEVICES WITH CRACK-RESISTANT FUSE
STRUCTURES A fuse base insulating region, for example, an insulating interlayer or a compensation region disposed in an insulating interlayer, is formed on a substrate. An... |
| 2011/0136331 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate... |
| 2011/0136330 |
Nonvolatile Semiconductor Memory Device and Manufacturing Method Thereof A memory device includes a semiconductor substrate, memory elements formed above the substrate in rows and columns, bit lines and word lines selectively... |
| 2011/0136329 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is... |
| 2011/0136328 |
METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with... |
| 2011/0136327 |
HIGH MOBILITY MONOLITHIC P-I-N DIODES Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a... |
| 2011/0136326 |
PILLAR DEVICES AND METHODS OF MAKING THEREOF A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the... |
| 2011/0136325 |
Method for fabricating a monolithic integrated composite group III-V and
group IV semiconductor device According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and... |
| 2011/0136324 |
SEMICONDUCTOR DICE TRANSFER-ENABLING APPARATUS AND METHOD FOR
MANUFACTURING TRANSFER-ENABLING APPARATUS A transfer-enabling apparatus, produced by a method of manufacturing, includes a substrate patterned with islands separated by trenches and an epitaxial layer,... |
| 2011/0136323 |
SEMICONDUCTOR DEVICE MANUFACTURING EQUIPMENT AND SEMICONDUCTOR DEVICE
MANUFACTURING METHOD Semiconductor device manufacturing equipment in which in the process of dividing a substrate into individual semiconductor devices using a dicing blade, the... |
| 2011/0136322 |
Adhesive Sheet for a Stealth Dicing and a Production Method of a
Semiconductor Wafer Device An adhesive sheet is provided enabling to efficiently produce the very small size semiconductor chip by a stealth dicing method. An adhesive sheet for a stealth... |
| 2011/0136321 |
METHOD FOR MANUFACTURING LAMINATION TYPE SEMICONDUCTOR INTEGRATED DEVICE Provided is a method for manufacturing a lamination type semiconductor integrated device that can simultaneously attain grinding force resistance during back... |
| 2011/0136320 |
METHOD OF MANUFACTURING SOI SUBSTRATE To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass... |
| 2011/0136319 |
Methods Of Forming Isolation Structures, And Methods Of Forming
Nonvolatile Memory Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed... |
| 2011/0136318 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING OPTICAL DEVICES Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a... |
| 2011/0136317 |
Semiconductor device, method of fabricating the same, and semicondutor
module, electronic circuit board, and... Example embodiments relate to a semiconductor device including an oxide dielectric layer and a non-oxide dielectric layer, a method of fabricating the device,... |
| 2011/0136316 |
PHASE CHANGE MEMORY DEVICE IN WHICH A PHASE CHANGE LAYER IS STABLY FORMED
AND PREVENTED FROM LIFTING AND METHOD... A phase change memory device includes a semiconductor substrate having a plurality of phase change cell regions; a lower electrode formed in each of the phase... |
| 2011/0136315 |
Multi-Level Phase Change Memory A phase change memory may be formed which is amenable to multilevel programming. The phase change material may be formed with a lateral extent which does not... |
| 2011/0136314 |
SYSTEMS AND METHODS FOR REDUCING CONTACT TO GATE SHORTS A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed... |
| 2011/0136313 |
Methods of Forming CMOS Transistors with High Conductivity Gate Electrodes Provided is a method for manufacturing a MOS transistor. The method comprises providing a substrate having a first active region and a second active region;... |
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