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Patent # Description
2011/0198623 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device includes an array of light emitting cells. Banks define each of the light emitting cells. The light emitting cells include a first light...
2011/0198622 ORGANIC OPTO-ELECTRIC DEVICE AND A METHOD FOR MANUFACTURING AN ORGANIC OPTO-ELECTRIC DEVICE
An organic opto-electric device has a layer stack with a base electrode, an organic layer assembly, a cover electrode and a contact layer. The organic layer...
2011/0198621 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND...
A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including...
2011/0198620 BARRIER FILM COMPOSITE AND DISPLAY APPARATUS INCLUDING THE BARRIER FILM COMPOSITE
A barrier film composite includes a decoupling layer and a barrier layer. The barrier layer includes a first region and a second region that is thinner than the...
2011/0198619 LIGHT EMITTING DIODE ASSEMBLY HAVING IMPROVED LIGHTING EFFICIENCY
A light emitting diode assembly is disclosed in the present invention. The light emitting diode assembly has a substrate and several light emitting diode units....
2011/0198618 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active...
2011/0198617 ELECTRODE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC...
2011/0198616 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Each unit cell includes: a drift layer 3 made of an n-type wide bandgap semiconductor formed on a substrate 2 made of an n-type wide bandgap semiconductor; a...
2011/0198615 High-Sensitivity, High-Resolution Detector Devices and Arrays
Avalanche amplification structures including electrodes, an avalanche region, a quantifier, an integrator, a governor, and a substrate arranged to detect a weak...
2011/0198614 METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM
A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a...
2011/0198613 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
The leakage current generated in a pn junction region between a gate and a source is reduced in a junction FET using a silicon carbide substrate. In a trench...
2011/0198612 SIC SEMICONDUCTOR DEVICE HAVING CJFET AND METHOD FOR MANUFACTURING THE SAME
A SiC semiconductor device includes: a SiC substrate made of intrinsic SiC having semi-insulating property; first and second conductive type SiC layers disposed...
2011/0198611 III-Nitride Power Device with Solderable Front Metal
Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using...
2011/0198610 NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD OF THE NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND...
To provide a nitride semiconductor crystal, comprising: laminated homogeneous nitride semiconductor layers, with a thickness of 2 mm or more, wherein the...
2011/0198609 Light-Emitting Devices with Through-Substrate Via Connections
Multiple through-substrate vias (TSVs) are used to make electrical connections for an LED formed over a substrate. A first TSV extends through the substrate...
2011/0198608 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a...
2011/0198607 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND ELECTRONIC APPARATUS
A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light...
2011/0198606 THIN FILM TRANSISTOR AND DISPLAY DEVICE
An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a...
2011/0198605 Termination Structure with Multiple Embedded Potential Spreading Capacitive Structures for Trench MOSFET and Method
A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench...
2011/0198604 FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A method for fabricating a thin film transistor and a thin film transistor includes a polycrystalline silicon layer formed by irradiating an amorphous silicon...
2011/0198603 THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
Disclosed are a thin film transistor and a method of forming the thin film transistor. The thin film transistor includes a gate electrode, an oxide ...
2011/0198602 ALUMINUM ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET
Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that...
2011/0198601 METHOD OF MANUFACTURING DISPLAY DEVICE
To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a...
2011/0198600 METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING...
A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a...
2011/0198599 Semiconductor Device and Display Device Utilizing the Same
A source-drain voltage of one of two transistors connected in series becomes quite small in a set operation (write signal), thus the set operation is performed...
2011/0198598 ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display apparatus includes a substrate, a thin film transistor (TFT) on the substrate, a first electrode on the TFT in each of a...
2011/0198597 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light emitting display device includes at least one thin film transistor (TFT) on a substrate, the at least one TFT including a semiconductor active...
2011/0198596 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display device including a pixel-defining layer and a spacer, and a method of manufacturing the same. The method includes: forming an...
2011/0198595 LIQUID CRYSTAL DISPLAY DEVICE
It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a...
2011/0198594 Semiconductor Device and Manufacturing Method Thereof
It is an object to provide a semiconductor device having excellent electric characteristics or high reliability, or a manufacturing method thereof. A...
2011/0198593 SEMICONDUCTOR DEVICE
A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times...
2011/0198592 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR
Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film...
2011/0198591 METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR
Disclosed is a method of forming a heterojunction bipolar transistor (HBT), comprising depositing a first stack comprising an polysilicon layer (16) and a...
2011/0198590 SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING SAME BY HVPE METHOD INCORPORATING A...
In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial...
2011/0198589 SEMICONDUCTOR CHIP
A semiconductor chip comprises a metal pad exposed by an opening in a passivation layer, wherein the metal pad has a testing area and a bond area. During a step...
2011/0198588 Polysilicon control etch-back indicator
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator...
2011/0198587 SEMICONDUCTOR APPARATUS
A semiconductor apparatus according to aspects of the invention includes a power MOSFET including a main MOSFET and sensing MOSFET's. The main MOSFET and the...
2011/0198586 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and...
2011/0198585 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS
It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a...
2011/0198584 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active...
2011/0198583 SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered...
2011/0198582 ORGANIC LIGHT-EMITTING DEVICE
An organic light-emitting device includes an organic compound layer containing an organic compound in which the 3-position of a benzo[k]fluoranthene ring is...
2011/0198581 AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME
Disclosed is a long-life organic EL device having high luminous efficiency even after storage at high temperatures. Also disclosed is an aromatic amine...
2011/0198580 PHOTOACTIVE COMPOSITION AND ELECTRONIC DEVICE MADE WITH THE COMPOSITION
There is provided a photoactive composition including: (a) a first host material comprising a phenanthroline derivative; (b) a second host material comprising...
2011/0198579 Host material for light-emitting diodes
The present invention relates to a host material comprising a compound having two carbazole moieties which is suitable for blue-emitting OLEDs. Surprisingly, it...
2011/0198578 SILOLES SUBSTITUTED BY FUSED RING SYSTEMS AND USE THEREOF IN ORGANIC ELECTRONICS
The present invention relates to the use of siloles substituted by fused ring systems in organic electronics applications, and to specific siloles substituted...
2011/0198577 ORGANIC ELECTROLUMINESCENT ELEMENT AND DISPLAY DEVICE
An organic electroluminescent element having high light emission efficiency, high color purity, and a long light emission lifetime, and a display device using...
2011/0198576 AMINO COMPOUND FOR ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME
An amino compound for an organic light-emitting device of general formula [1]: ##STR00001## wherein X.sub.1 is bonded to the pair of fluorenyl groups at ...
2011/0198575 COMPOSITIONS COMPRISING NOVEL COMPOUNDS AND ELECTRONIC DEVICES MADE WITH SUCH COMPOSITIONS
The present invention relates to novel compounds and polymers, compositions comprising novel compounds or polymers, and electronic devices comprising at least...
2011/0198574 Quinoxaline Derivative, and Light-Emitting Device, Electronic Device Using the Quinoxaline Derivative
The present invention provides a novel organic compound having excellent heat resistance. By using the novel organic compound, a light-emitting device and an...
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