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| Patent # | Description |
|---|---|
| 2011/0215355 |
PHOTONIC CRYSTAL PHOSPHOR LIGHT CONVERSION STRUCTURES FOR LIGHT EMITTING
DEVICES Solid state light emitting devices include a solid state light emitting die and a photonic crystal phosphor light conversion structure. The photonic crystal... |
| 2011/0215354 |
Double Flip-Chip LED Package Components A light-emitting device (LED) package component includes an LED chip and a carrier chip. The carrier chip includes a first and a second bond pad on a surface of... |
| 2011/0215353 |
LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME A light emitting device package comprises a substrate, an electrode on the substrate, a light emitting device on the substrate and electrically connected to the... |
| 2011/0215352 |
LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING
DEVICE PACKAGE Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride... |
| 2011/0215351 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type... |
| 2011/0215350 |
LIGHT EMITTING DEVICE AND METHOD THEREOF Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the... |
| 2011/0215349 |
LIGHT EMITTING DEVICE AND LIGHT UNIT HAVING THE SAME A light emitting device includes a body having a recess; a barrier section protruding upward over a bottom surface of the recess and dividing the bottom surface... |
| 2011/0215348 |
Reflection Mode Package for Optical Devices Using Gallium and Nitrogen
Containing Materials An optical device includes an LED formed on a substrate and a wavelength conversion material, which may be stacked or pixilated, within vicinity of the LED. A... |
| 2011/0215347 |
Increasing Contrast In Electronic Color Displays Via Surface Texturing Of
LEDs In an embodiment, the invention provides a light source comprising a plurality of light-emitting semiconductor chips, a plurality of electrical leads and an... |
| 2011/0215346 |
LIGHT EMITTING DIODE AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on... |
| 2011/0215345 |
SOLID STATE LAMP WITH THERMAL SPREADING ELEMENTS AND LIGHT DIRECTING
OPTICS Lamps and bulbs are disclosed generally comprising different combinations and arrangements of a light source, one or more wavelength conversion materials,... |
| 2011/0215344 |
LOW POWER GRADED BASE SiGe HBT LIGHT MODULATOR A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EO) modulator includes a graded base HBT and a light beam... |
| 2011/0215343 |
Semiconductor device and optical pickup device By increasing the width of a lead terminal 2 connected to a die pad 1 in the vicinity of the die pad 1 and forming a slit 9 and a projecting plate in the lead... |
| 2011/0215342 |
LED PACKAGING WITH INTEGRATED OPTICS AND METHODS OF MANUFACTURING THE SAME Methods and structures are provided for wafer-level packaging of light-emitting diodes (LEDs). An array of LED die are mounted on a packaging substrate. The... |
| 2011/0215341 |
Biometric Sensor Assembly With Integrated Visual Indicator A biometric sensor assembly comprises a substrate to which is mounted a die containing sensor circuitry, at least one conductive bezel having a visual indicator... |
| 2011/0215340 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon... |
| 2011/0215339 |
Termination and contact structures for a high voltage GaN-based
heterojunction transistor A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first... |
| 2011/0215338 |
SEMICONDUCTOR DEVICES WITH HETEROJUNCTION BARRIER REGIONS AND METHODS OF
FABRICATING SAME An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with... |
| 2011/0215337 |
ELECTRIC OPTICAL DEVICE AND ELECTRONIC DEVICE An electric optical device includes a transistor that includes a semiconductor layer having a source region connected to a data line, a drain region connected... |
| 2011/0215336 |
LAMINATED STRUCTURE, MULTILAYER WIRING BOARD, ACTIVE MATRIX SUBSTRATE,
IMAGE DISPLAY APPARATUS, AND METHOD FOR... A method for manufacturing a laminated structure includes a step of supplying a droplet of a functional fluid selectively to at least a first region of a high... |
| 2011/0215335 |
Organic light emitting diode display and manufacturing method thereof An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom... |
| 2011/0215334 |
PHOTOCURABLE POLYMERIC DIELECTRICS AND METHODS OF PREPARATION AND USE
THEREOF Disclosed are polymer-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The polymers generally include... |
| 2011/0215333 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed... |
| 2011/0215332 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A threshold voltage of a thin film transistor is adjusted. The thin film transistor is manufactured through the steps of: introducing a semiconductor material... |
| 2011/0215331 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF An object of the present invention to provide a highly reliable semiconductor device. Another object is to provide a manufacturing method of a highly reliable... |
| 2011/0215330 |
ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME An organic light-emitting display device and a method of fabricating the same. The organic light-emitting display device includes: a substrate; a first... |
| 2011/0215329 |
ORGANIC LIGHT-EMITTING DISPLAY DEVICE An organic light-emitting display device, formed to be transparent, includes a substrate; a plurality of thin film transistors disposed on the substrate; a... |
| 2011/0215328 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR,
AND DISPLAY DEVICE There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of... |
| 2011/0215327 |
ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is... |
| 2011/0215326 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Disclosed is a semiconductor device including: an insulating layer; a source electrode and a drain electrode embedded in the insulating layer; an oxide... |
| 2011/0215325 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A highly purified oxide semiconductor layer is formed in such a manner that a substance that firmly bonds during film formation to an impurity containing a... |
| 2011/0215324 |
THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF A thin film transistor (TFT) and a fabricating method thereof are provided. The TFT includes a channel layer, an ohmic contact layer, a dielectric layer, a... |
| 2011/0215323 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor... |
| 2011/0215322 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode... |
| 2011/0215321 |
POLYSILICON RESISTOR AND E-FUSE FOR INTEGRATION WITH METAL GATE AND HIGH-K
DIELECTRIC A method is provided for making a resistive polycrystalline semiconductor device, e.g., a poly resistor of a microelectronic element such as a semiconductor... |
| 2011/0215320 |
MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF
FORMING THE SAME In a first aspect, a method of forming a memory cell is provided that includes: (a) forming a layer of dielectric material above a substrate; (b) forming an... |
| 2011/0215319 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further,... |
| 2011/0215318 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further,... |
| 2011/0215317 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Disclosed is a semiconductor device including an insulating layer, a source electrode and a drain electrode embedded in the insulating layer, an oxide... |
| 2011/0215316 |
LOW VOLTAGE-DRIVEN ORGANIC ELECTROLUMINESCENCE DEVICE, AND MANUFACTURING
METHOD THEREOF The present invention provides an organic light emitting device including an organic layer of two or more organic layers including a first electrode, a second... |
| 2011/0215315 |
SWITCHING ELEMENT AND METHOD FOR FABRICATING SAME A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes,... |
| 2011/0215314 |
DUAL GATE FIELD-EFFECT TRANSISTOR AND METHOD OF PRODUCING A DUAL GATE
FIELD-EFFECT TRANSISTOR The present invention relates to a dual gate field-effect transistor (1) comprising a first and a second dielectric layer (6,7), a first and a second gate... |
| 2011/0215313 |
DIKETOPYRROLOPYRROLE POLYMERS FOR USE IN ORGANIC SEMICONDUCTOR DEVICES The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (I), and at least one (repeating) unit(s) which is selected... |
| 2011/0215312 |
ORGANIC ELECTRIC FIELD LIGHT EMITTING ELEMENT AND PRODUCTION THEREFOR A composition for an organic electroluminescent device is a composition for forming an organic light emitting layer of an organic electroluminescent device by... |
| 2011/0215311 |
Electrode Device for Organic Device and Electronic Device Having the Same To provide an electrode for an organic device which can be widely applied to organic devices by having both hole injection function and electron injection... |
| 2011/0215310 |
ELECTRON TRANSPORT MATERIAL AND ORGANIC ELECTROLUMINESCENT DEVICE USING
THE SAME A compound represented by the following Formula (1) is useful as an electron transport material of an organic EL device, and an organic EL device comprising the... |
| 2011/0215309 |
WHITE PHOSPHORESCENT ORGANIC LIGHT EMITTING DEVICES A device is provided. The device includes an anode, a cathode and a double emissive layer disposed between the anode and the cathode. The double emissive layer... |
| 2011/0215308 |
ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME An organic light-emitting device and a method of manufacturing the same. The organic light-emitting device includes a substrate, a first electrode formed on the... |
| 2011/0215307 |
Light-Emitting Element, Light-Emitting Device, Electronic Device, and
Lighting Device A light-emitting element includes an EL layer between an anode and a cathode, and a first layer, a second layer, and a third layer between the cathode and the... |
| 2011/0215306 |
ORGANIC SEMICONDUCTOR ELEMENT AND ORGANIC ELECTRODE To provide an organic semiconductor element, containing: a source electrode containing a first organic compound layer and a second organic compound layer, at... |
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