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Patent # Description
2011/0298033 SEMICONDUCTOR STORAGE DEVICE
According to one embodiment, a semiconductor storage device includes a charge storage layer, a control gate. The charge storage layer is formed above a...
2011/0298032 ARRAY ARCHITECTURE FOR EMBEDDED FLASH MEMORY DEVICES
A method for manufacturing Flash memory devices includes forming a well region in a substrate, depositing a gate dielectric layer overlying the well region, and...
2011/0298031 SEMICONDUCTOR MEMORY DEVICE INCLUDING MULTI-LAYER GATE STRUCTURE
A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a...
2011/0298030 SEMICONDUCTOR STORAGE DEVICE
In a 4F.sup.2 memory cell designed using an SGT as a vertical transistor, a bit line has a high resistance because it is comprised of a diffusion layer...
2011/0298029 SEMICONDUCTOR STORAGE DEVICE
In a 4F.sup.2 memory cell designed using an SGT as a vertical transistor, a bit line has a high resistance because it is comprised of a diffusion layer...
2011/0298028 HAFNIUM TANTALUM TITANIUM OXIDE FILMS
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed...
2011/0298027 SEMICONDUCTOR DEVICE
It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no...
2011/0298026 LOGIC-BASED eDRAM USING LOCAL INTERCONNECTS TO REDUCE IMPACT OF EXTENSION CONTACT PARASITICS
An electronic device includes an active layer located over a substrate with the active layer having a logic circuit and an eDRAM cell. The electronic device...
2011/0298025 FINFET-COMPATIBLE METAL-INSULATOR-METAL CAPACITOR
At least one semiconductor fin for a capacitor is formed concurrently with other semiconductor fins for field effect transistors. A lower conductive layer is...
2011/0298024 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE...
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion...
2011/0298023 SOLID-STATE IMAGING DEVICE
According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first...
2011/0298022 MANUFACTURING METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE, SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP...
A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation...
2011/0298021 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first...
2011/0298020 SEMICONDUCTOR DEVICE
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first...
2011/0298019 COMPACT FIELD EFFECT TRANSISTOR WITH COUNTER-ELECTRODE AND FABRICATION METHOD
An etching mask, comprising the delineation pattern of the gate electrode, of a source contact, a drain contact and a counter-electrode contact, is formed on a...
2011/0298018 TRANSISTOR AND MANUFACTURING METHOD OF THE SAME
The invention provides a transistor, including: a substrate having a channel region; a source region and a drain region on two ends of the channel region of the...
2011/0298017 REPLACEMENT GATE MOSFET WITH SELF-ALIGNED DIFFUSION CONTACT
A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack...
2011/0298016 MOSFET having a JFET embedded as a body diode
A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field...
2011/0298015 SENSING DEVICE
A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface...
2011/0298014 Cross-Point Memory Structures
Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal...
2011/0298013 Vertical Structure Semiconductor Memory Devices And Methods Of Manufacturing The Same
A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed...
2011/0298012 SEMICONDUCTOR INTEGRATED CIRCUIT
A semiconductor integrated circuit according to one aspect of the present invention may includes a plurality of driving circuits to drive a respective plurality...
2011/0298011 Semiconductor Memory Device And System Having Stacked Semiconductor Layers
Example embodiments relate to a semiconductor memory device and a system in which a plurality of semiconductor layers are stacked on each other. A 3-dimensional...
2011/0298010 Cell Library, Integrated Circuit, and Methods of Making Same
A cell library intended to be used to form an integrated circuit, this library defining a first cell including a first MOS transistor of minimum dimensions, and...
2011/0298009 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME
An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a...
2011/0298008 SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING THE SAME
A low energy surface is formed by a high temperature anneal of the surfaces of trenches on each side of a gate stack. The material of the semiconductor layer...
2011/0298007 SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a...
2011/0298006 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and...
2011/0298005 METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR
A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above...
2011/0298004 ENCAPSULATING SHEET FOR OPTICAL SEMICONDUCTOR
The present invention relates to an encapsulating sheet for an optical semiconductor, including: a phosphor-containing layer containing a phosphor; and an...
2011/0298003 EPOXY RESIN COMPOSITION FOR OPTICAL USE, OPTICAL COMPONENT USING THE SAME, AND OPTICAL SEMICONDUCTOR DEVICE...
The present invention relates to an epoxy resin composition for optical use including the following ingredients (A) to (C): (A) an epoxy resin; (B) a curing...
2011/0298002 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE
The object of the invention is to provide a light-emitting diode that is excellent in terms of thermal radiation properties and is capable of suppressing cracks...
2011/0298001 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME
In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The...
2011/0298000 CHIP PACKAGE
According to an embodiment of the invention, a chip package is provided, which includes: a substrate having a first surface and a second surface; an optical...
2011/0297999 Optoelectronic Semiconductor Component
An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a...
2011/0297998 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating...
2011/0297997 SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating...
2011/0297996 Electronic device and method of manufacturing the same
An electronic device comprises a functional stack (10) and a cover (50) coupled thereto by an insulating adhesive layer (30). The functional stack (10)...
2011/0297995 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME
In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The...
2011/0297994 SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an...
2011/0297993 LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light...
2011/0297992 SEMICONDUCTOR LIGHT EMITTING DEVICE
There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum...
2011/0297991 SEMICONDUCTOR LIGHT EMITTING DEVICE
A wiring electrode is provided on a mount substrate. A light emitting element is provided on the wiring electrode to connect electrically with the wiring...
2011/0297990 LIGHT EMITTING DEVICE AND DISPLAY
A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a...
2011/0297989 LIGHT EMITTING DEVICE
The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer...
2011/0297988 TRANSPARENT SUBSTRATE FOR PHOTONIC DEVICES
Transparent substrate (1) for photonic devices comprising a support (10) and an electrode (11), said electrode (11) comprising a lamination structure comprising...
2011/0297987 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a...
2011/0297986 LIGHT SOURCE APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members....
2011/0297985 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion...
2011/0297984 PHOTOELECTRICAL ELEMENT HAVING A THERMAL-ELECTRICAL STRUCTURE
A photoelectrical element having a thermal-electrical structure including: a photoelectrical transforming layer, two semiconductor layers formed on the two...
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