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Patent # Description
2016/0099315 NANOTUBE SEMICONDUCTOR DEVICES
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a...
2016/0099314 METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
In one embodiment, a method of forming an MOS transistor includes forming a threshold voltage (Vth) of the MOS transistor to have a first value at interior...
2016/0099313 SEMICONDUCTOR STRUCTURE FOR A TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A semiconductor structure includes a substrate and a fin. The fin extends from the substrate and is formed with a hole therethrough. The hole is defined by a...
2016/0099312 NANOWIRE FABRICATION METHOD AND STRUCTURE THEREOF
A method of providing an out-of-plane semiconductor structure and a structure fabricated thereby is disclosed. The method comprises acts of: providing a...
2016/0099311 SEMICONDUCTOR STRUCTURE AND A METHOD FOR PROCESSING A CARRIER
According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed...
2016/0099310 SEMICONDUCTOR DEVICE INTEGRATING HIGH AND LOW VOLTAGE DEVICES
The present invention is directed to a method for forming multiple active components, such as bipolar transistors. MOSFETs, diodes, etc., on a semiconductor...
2016/0099309 Method for Growing III-V Epitaxial Layers
Disclosed are methods of growing III-V epitaxial layers on a substrate, semiconductor structures thus obtained, and devices comprising such semiconductor...
2016/0099308 OXIDE TERMINATED TRENCH MOSFET WITH THREE OR FOUR MASKS
An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are...
2016/0099307 TERMINATION DESIGN BY METAL STRAPPING GUARD RING TRENCHES SHORTED TO A BODY REGION TO SHRINK TERMINATION AREA
This invention discloses a semiconductor power device formed in a semiconductor substrate of a first conductivity type comprises an active cell area and a...
2016/0099306 MONOLITHIC MERGED PIN SCHOTTKY DIODE STRUCTURE
A monolithic merged PIN Schottky (MPS) diode including a chip, at least one PIN diode, at least one Schottky diode and a termination structure is provided. The...
2016/0099305 Integrated Circuitry and Methods of Forming Transistors
Some embodiments include integrated circuits having first and second transistors. The first transistor is wider than the second transistor. The first and...
2016/0099304 MoNx as a Top Electrode for TiOx Based DRAM Applications
A capacitor stack includes a base bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the...
2016/0099303 Doped Electrode for DRAM Capacitor Stack
In some embodiments, a metal oxide second electrode material is formed as part of a MIM DRAM capacitor stack. The second electrode material is doped with one...
2016/0099302 EMBEDDED METAL-INSULATOR-METAL CAPACITOR
A method of manufacturing a semiconductor device comprising a capacitor structure is provided, including the steps of forming a first metallization layer...
2016/0099301 Structure of integrated inductor
This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal...
2016/0099300 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND ORGANIC LIGHT-EMITTING DIODE DISPLAY INCLUDING THE SAME
A thin film transistor (TFT) array substrate and organic light-emitting diode (OLED) display including the same are disclosed. In one aspect, the array...
2016/0099299 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes a substrate comprising a major surface; a display region and a peripheral region surrounding the display...
2016/0099298 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
An organic light-emitting display apparatus includes a thin film transistor including an active layer, gate, source and drain electrodes, a first insulating...
2016/0099297 FLEXIBLE ACTIVE MATRIX DISPLAY
High resolution active matrix structures are fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor...
2016/0099296 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
An organic light-emitting display apparatus includes a substrate; a plurality of pixels provided on a first surface of the substrate and each comprising a...
2016/0099295 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes a plurality of first sub-pixels arranged adjacent to each other along a first direction, each of the first...
2016/0099294 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display device includes a substrate having a first width in a first direction and a second width in a second direction, the second...
2016/0099293 Organic Light Emitting Diode Display Device
Disclosed is an organic light emitting diode (OLED) display device for preventing a dark spot (dead pixel). The OLED display device includes a white OLED...
2016/0099292 RESISTANCE-CHANGE SEMICONDUCTOR MEMORY
According to one embodiment, a memory includes first to fourth memory cells aligned in a first direction. Each of the first to fourth memory cells comprises a...
2016/0099291 METAL LINE CONNECTION FOR IMPROVED RRAM RELIABILITY, SEMICONDUCTOR ARRANGEMENT COMPRISING THE SAME, AND...
Some embodiments relate to an integrated circuit device including an array of memory cells disposed over a semiconductor substrate. An array of first metal...
2016/0099290 MEMORY DEVICE
According to one embodiment, a memory device includes a first gate electrode, a second gate electrode, a third gate electrode, a first active area and a second...
2016/0099289 SEMICONDUCTOR MEMORY DEVICE
A plurality of first conductive layers are stacked at a predetermined pitch in a first direction perpendicular to a substrate. A memory layer is provided in...
2016/0099288 MAGNETIC MEMORY AND MANUFACTURING METHOD OF THE SAME
According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the...
2016/0099287 MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer...
2016/0099286 SEMICONDUCTOR DEVICE INCLUDING IMAGE PICK UP DEVICE
The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation...
2016/0099285 METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING CAMERA MODULE
Certain embodiments provide a method for manufacturing a solid-state imaging device including: forming a sensor chip fixed to a supporting substrate by a first...
2016/0099284 MINIATURE WAFER-LEVEL CAMERA MODULES
In one aspect, a method includes providing a lens substrate having an array of lenses. The lens substrate includes an overflow region next to each lens of the...
2016/0099283 PHOTOSENSOR WITH CHANNEL REGION HAVING CENTER CONTACT
A pixel cell includes a charge accumulation region having a second doping polarity buried completely in a semiconductor substrate having a first doping...
2016/0099282 3D HIGH RESOLUTION X-RAY SENSOR WITH INTEGRATED SCINTILLATOR GRID
Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array...
2016/0099281 3D HIGH RESOLUTION X-RAY SENSOR WITH INTEGRATED SCINTILLATOR GRID
Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array...
2016/0099280 IMAGE SENSORS AND METHODS OF FORMING THE SAME
An image sensor is provided. The image sensor includes a red (R) pixel, a green (G) pixel, a blue (B) pixel and an infrared (IR) pixel, and R, G and B filters...
2016/0099279 IMAGE SENSOR WITH DEEP WELL STRUCTURE AND FABRICATION METHOD THEREOF
An image sensor device includes a substrate having a first conductivity type. A plurality of photo-sensing regions including a first, a second, and a third...
2016/0099278 BACK-ILLUMINATED INTEGRATED IMAGING DEVICE WITH SIMPLIFIED INTERCONNECT ROUTING
A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations....
2016/0099277 3D HIGH RESOLUTION X-RAY SENSOR WITH INTEGRATED SCINTILLATOR GRID
Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array...
2016/0099276 IMAGE SENSOR WITH HYBRID HETEROSTRUCTURE
An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel...
2016/0099275 SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM
There is provided a solid-state imaging device including a wafer in which a guard ring with conductivity in an insulation film layered on a first conductivity...
2016/0099274 3D HIGH RESOLUTION X-RAY SENSOR WITH INTEGRATED SCINTILLATOR GRID
Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array...
2016/0099273 IMAGERS WITH DEPTH SENSING CAPABILITIES
An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a...
2016/0099272 STACKED FILTER AND IMAGE SENSOR CONTAINING THE SAME
A stacked filter for an image sensor including an infrared (IR) pixel is provided. The stacked filter includes a first filter layer disposed at the IR pixel....
2016/0099271 INFRARED IMAGE SENSOR
An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at...
2016/0099270 IMAGE-SENSOR STRUCTURES
An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate,...
2016/0099269 Fully Differential Output Swing for Analog Array Based Charge Mode Readout used in a CMOS Image Sensor
Disclosed herein are novel charge mode readout circuits and associated methods of signal processing. The devices and methods of the invention allow for the...
2016/0099268 IMAGING APPARATUS AND IMAGING SYSTEM
Provided is an imaging apparatus, including a pixel region in which a plurality of pixels are arranged, the plurality of pixels each including: a plurality of...
2016/0099267 CMOS IMAGE SENSOR FOR REDUCING DEAD ZONE
An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image...
2016/0099266 SELF-ALIGNED ISOLATION STRUCTURES AND LIGHT FILTERS
An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the...
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