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Patent # Description
2016/0118540 Light-Emitting Diode
A light-emitting diode includes at least an N-type layer, a light-emitting layer and a P-type layer, wherein the light-emitting layer forms a "V"-shaped...
2016/0118539 LIGHT EMITTING DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME
An n-type GaN layer made of n-type gallium nitride (GaN) is formed on a sapphire substrate. A plurality of island-phased layered structures are formed in...
2016/0118538 LIGHT-EMITTING DEVICE HAVING A PATTERNED SUBSTRATE AND THE METHOD THEREOF
A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured...
2016/0118537 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A semiconductor light-emitting element comprises: a first semiconductor layer, an active layer having a multiple quantum well structure in which a plurality of...
2016/0118536 Semiconductor Structure with Inhomogeneous Regions
A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a...
2016/0118535 Metallic Contact for Optoelectronic Semiconductor Device
A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and...
2016/0118534 Semiconductor Layer Including Compositional Inhomogeneities
A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap...
2016/0118533 METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE
A method of manufacturing a nanostructure semiconductor light emitting device may include: stacking a mask layer on a conductive base layer and forming a...
2016/0118532 LED light bulb manufacturing method
An LED light bulb manufacturing method, comprising the following steps: 1) preparing a transitional epitaxial layer on a substrate to form an epitaxial wafer;...
2016/0118531 Optoelectronic Device with Modulation Doping
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type...
2016/0118530 LASER SOLDERING SYSTEMS AND METHODS FOR JOINING CRYSTALLINE SILICON SOLAR BATTERIES
The disclosure includes a laser soldering method of connecting crystalline silicon solar batteries. Methods can include placing conductive soldering strips and...
2016/0118529 SIGNAL DISTRIBUTION IN INTEGRATED CIRCUIT USING OPTICAL THROUGH SILICON VIA
An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is...
2016/0118528 SIGNAL DISTRIBUTION IN INTEGRATED CIRCUIT USING OPTICAL THROUGH SILICON VIA
An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is...
2016/0118527 CHARGE COUPLED DEVICE BASED ON ATOMICALLY LAYERED VAN DER WAALS SOLID STATE FILM FOR OPTO-ELECTRONIC MEMORY AND...
An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a...
2016/0118526 MULTI-JUNCTION SOLAR CELL WITH DILUTE NITRIDE SUB-CELL HAVING GRADED DOPING
A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell....
2016/0118525 III-V PHOTOVOLTAIC ELEMENTS
Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a...
2016/0118524 STACKED INTEGRATED MULTI-JUNCTION SOLAR CELL
A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice...
2016/0118523 SOLAR CELL MODULE AND METHOD AND DEVICE FOR REPAIRING THE SAME
A solar cell module and a method and a device for repairing the solar cell module are disclosed. The method for repairing a defective solar cell of the solar...
2016/0118522 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME
Disclosed herein are a solar cell module and a method for manufacturing the same. The solar cell module comprises: a substrate; and a plurality of solar cells...
2016/0118521 MATING SYSTEM FOR PHOTOVOLTAIC ARRAY
A photovoltaic component comprising; two or more mating components spatially separated along a surface of the photovoltaic component wherein at feast one of...
2016/0118520 METHODS OF HERMETICALLY SEALING PHOTOVOLTAIC MODULES
In various embodiments, photovoltaic modules are hermetically sealed by providing a first glass sheet, a photovoltaic device disposed on the first glass sheet,...
2016/0118519 THIN FILM SOLAR CELL PANEL AND MANUFACTURING METHOD THEREOF
The present invention provides a thin film solar cell panel and a manufacturing method thereof. The thin film solar cell panel comprises a substrate, a first...
2016/0118518 A BACKSHEET FOR PHOTOVOLTAIC MODULES
A backsheet for a photovoltaic module includes a support and a weather resistant layer, the weather resistant layer including a binder containing a...
2016/0118517 GROUPED NANOSTRUCTURED UNITS SYSTEM FORMING A METAMATERIAL
This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in...
2016/0118516 PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS
Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by...
2016/0118515 BACK CONTACT TYPE SOLAR BATTERY CELL
A back contact type solar battery which provides a reduced electric power loss, free positioning of a bus bar, and a simple manufacturing process. The solar...
2016/0118514 SOLAR CELL, SOLAR CELL PANEL, AND SOLAR CELL FILM
According to one embodiment, a solar cell includes a first electrode, a photoelectric conversion film, a second electrode, and a first electret. The...
2016/0118513 COMPOSITION FOR FORMING ELECTRODE, PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTATIC CELL
A composition for forming an electrode includes a phosphorus-containing copper alloy particle, a tin-containing particle, a specific metal element M-containing...
2016/0118512 METHOD FOR MANUFACTURING SOLAR-POWER-GENERATOR SUBSTRATE AND APPARATUS FOR MANUFACTURING SOLAR-POWER-GENERATOR...
A method for manufacturing a solar-power-generator substrate by cutting out a semiconductor substrate by slicing a semiconductor ingot and then by forming a...
2016/0118511 METHOD FOR FABRICATING A PHOTOSENSITIVE DEVICE
A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within...
2016/0118510 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell includes a semiconductor substrate, a boron back surface field (BSF) layer, a passivation layer, a back electrode layer and an aluminum local BSF...
2016/0118509 Light Detector Using an On-Die Interference Filter
A light detector includes a semiconductor die that provides a photo sensor. An interference filter is formed on the semiconductor die and has a pass band...
2016/0118508 Method for Producing a Solar Cell
The invention relates to a method for producing a solar cell composed of crystalline silicon, as well as a solar cell of said type. The substrate of said solar...
2016/0118507 PHOTOVOLTAIC MODULE INCLUDING INTEGRATED PHOTOVOLTAIC CELLS
A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal...
2016/0118506 SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
A semiconductor package includes a substrate, at least one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a...
2016/0118505 Display Device And Semiconductor Device
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation...
2016/0118504 THIN FILM TRANSISTOR
A thin film transistor disposed on a substrate, includes a gate, a gate insulation layer, a first source/drain, a semiconductor layer and a second...
2016/0118503 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate...
2016/0118502 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The...
2016/0118501 THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a...
2016/0118500 FIN STRUCTURES AND MULTI-VT SCHEME BASED ON TAPERED FIN AND METHOD TO FORM
A method of forming a FinFET fin with low-doped and a highly-doped active portions and/or a FinFET fin having tapered sidewalls for Vt tuning and multi-Vt...
2016/0118499 FD DEVICES IN ADVANCED SEMICONDUCTOR TECHNIQUES
The present disclosure provides in some aspects a semiconductor device and a method of forming a semiconductor device. According to some illustrative...
2016/0118498 HIGH DOSE IMPLANTATION FOR ULTRATHIN SEMICONDUCTOR-ON-INSULATOR SUBSTRATES
Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant...
2016/0118497 METHOD TO FORM STRAINED CHANNEL IN THIN BOX SOI STRUCTURES BY ELASTIC STRAIN RELAXATION OF THE SUBSTRATE
Methods and structures for forming strained-channel FETs are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate...
2016/0118496 SEMICONDUCTOR STRUCTURES WITH FIELD EFFECT TRANSISTOR(S) HAVING LOW-RESISTANCE SOURCE/DRAIN CONTACT(S)
Disclosed are semiconductor structures comprising a field effect transistor (FET) having a low-resistance source/drain contact and, optionally, low...
2016/0118495 INTEGRATED BREAKDOWN PROTECTION
A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active...
2016/0118494 MOS FIELD-EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF
A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate...
2016/0118493 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device structure can include: (i) a first semiconductor layer having dopants of a first type; (ii) a second semiconductor layer having the...
2016/0118492 SEMICONDUCTOR DEVICE
A semiconductor device includes a drift layer 20 of a first conductivity type, a base layer 30 of a second conductivity type that is disposed on the drift...
2016/0118491 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a first nitride semiconductor layer formed on the substrate, a p-type nitride semiconductor layer formed on the...
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