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HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING INTEGRATED CLAMPING DEVICE
In one embodiment, a group III-V transistor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and...
A semiconductor device includes a substrate, a semiconductor layer stacked body, and a source electrode and a drain electrode formed on the semiconductor layer...
FIELD EFFECT TRANSISTOR
In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than ...
Transistors, Semiconductor Devices, and Methods of Manufacture Thereof
Transistors, semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device...
Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition...
HIGH-VOLTAGE VERTICAL POWER COMPONENT
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the...
Bipolar Transistor with Enclosed Sub Areas and a Method for Manufacturing
Such a Bipolar Transistor
A bipolar transistor includes a semiconductor structure having an emitter area of a first conductivity type electrically connected to an emitter contact of the...
MULTI-GATE FETS HAVING CORRUGATED SEMICONDUCTOR STACKS AND METHOD OF
FORMING THE SAME
The present disclosure provides, in various aspects of the present disclosure, a semiconductor device which includes a semiconductor stack disposed over a...
METHOD FOR FORMING SEMICONDUCTOR NANOWIRE TRANSISTORS
A method for forming a semiconductor device includes forming a semiconductor substrate having at least one fin structure on an insulator on a substrate. The...
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the...
METHODS OF FORMING A TRI-GATE FINFET DEVICE AND THE RESULTING DEVICE
One illustrative method disclosed herein includes, among other things, forming a fin that is positioned above and vertically spaced apart from an upper surface...
3D UTB Transistor Using 2D-Material Channels
A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a...
METHOD OF MANUFACTURING THIN FILM TRANSISTOR
A method of manufacturing a thin film transistor substrate is provided, including a first photoresist pattern covers a channel during a process of etching a...
METHOD OF PRODUCTION OF FIELD-EFFECT TRANSISTOR WITH LOCAL SOURCE/DRAIN
A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate...
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE WITH
SILICON LAYER CONTAINING CARBON
A semiconductor device having an n channel MISFET formed on an SOI substrate including a support substrate, an insulating layer formed on the support substrate...
COUNTERDOPED SEMICONDUCTOR DEVICE
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a...
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first...
NON-PLANAR SCHOTTKY DIODE AND METHOD OF FABRICATION
A non-planar Schottky diode includes a semiconductor substrate of a first type, the first type including one of n-type and p-type. The structure further...
METHODS OF FORMING 3D DEVICES WITH DIELECTRIC ISOLATION AND A STRAINED
One illustrative method involves forming a FinFET device or a nanowire device by forming a sacrificial gate structure above a substantially vertically oriented...
MECHANISM FOR FORMING METAL GATE STRUCTURE
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate, a metal gate stack, and an insulating layer...
DUAL METAL GATE ELECTRODE FOR REDUCING THRESHOLD VOLTAGE
A gate conductor material stack including, from bottom to top, of a first metallic nitride, a second metallic nitride, and a conductive material portion is...
INTEGRATED CIRCUIT DEVICES WITH COUNTER-DOPED CONDUCTIVE GATES
Integrated circuit devices with counter-doped conductive gates. The devices have a semiconductor substrate that has a substrate surface. The devices also have...
MULTIPLE LAYER INTERFACE FORMATION FOR SEMICONDUCTOR STRUCTURE
There is set forth herein a method of fabricating a contact interface formation. A layer of Ti metal can be deposited on a substrate and a layer of Ni metal...
THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY APPARATUS
Disclosed is a thin film transistor, including a gate electrode, a source electrode and a drain electrode. The source electrode includes a loop structure with...
SEMICONDUCTOR CHIP ARRANGEMENT
A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a...
Solid phase epitaxy of 3C-SiC on Si(001)
A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of...
APPARATUS AND METHODS FOR FORMING A MODULATION DOPED NON-PLANAR TRANSISTOR
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors...
FLOATING BODY MEMORY WITH ASYMMETRIC CHANNEL
A semiconductor structure and formation thereof. The semiconductor structure has a fin of a first semiconductor material. The fin has a first side surface...
FinFET with an Asymmetric Source/Drain Structure and Method of Making Same
Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is a semiconductor...
LATERAL FIELD EFFECT TRANSISTOR DEVICE
A lateral field effect transistor device has a plurality of source and drain cells. Each source cell has a central semiconductor source region, and each drain...
A semiconductor device comprises: a substrate; a multilayer semiconductor layer located on the substrate; a source located on the multilayer semiconductor...
CORNER LAYOUT FOR HIGH VOLTAGE SEMICONDUCTOR DEVICES
A corner layout for a semiconductor device that maximizes the breakdown voltage is disclosed. The device includes first and second subsets of the striped cell...
METAL-INSULATOR-METAL BACK END OF LINE CAPACITOR STRUCTURES
Embodiments of the present invention provide improved metal-insulator-metal (MIM) capacitors. In embodiments, series resistance is reduced by forming a via...
ORGANIC LIGHT EMITTING DISPLAY DEVICE
Provided is an organic light emitting display (OLED) device that includes, for example, a thin film transistor including an active layer, a gate electrode, a...
DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC APPARATUS
A display device including a pixel array unit having a matrix of pixels each configured such that an anode electrode of an organic electroluminescent element...
ORGANIC LIGHT-EMITTING DISPLAY DEVICE, METHOD OF REPAIRING THE SAME, AND
METHOD OF DRIVING THE SAME
An organic light-emitting display device includes a plurality of emission pixels aligned in columns and rows, each of the emission pixels including an emission...
DISPLAY DEVICE WITH POWER SUPPLY IN COVER TYPE
A display device comprises a display panel having a display area, in which a plurality of pixels and at least one power line for supplying power to the pixels...
ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
An organic light-emitting display apparatus includes a display that includes an organic emission layer and a thin film transistor that drives the organic...
ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE
An organic light emitting diode display device includes: a substrate; a scan line configured to transfer a scan signal; a data line and a driving voltage line...
FLEXIBLE THIN FILM TRANSISTOR SUBSTRATE AND FLEXIBLE ORGANIC LIGHT
EMITTING DISPLAY DEVICE
Provided are a flexible thin film transistor substrate and a flexible organic light emitting display device. The flexible thin film transistor substrate...
ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND FABRICATION METHOD THEREOF
Provided are an organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes a...
A display device, in which self-luminous elements are arranged, prevents a leakage current through a common layer, included in the self-luminous elements and...
ANTIREFLECTIVE OLED CONSTRUCTION
The disclosure relates to emissive displays and, in particular, to emissive displays that include a top surface (111) that has a diffusely reflective inactive...
ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE
An organic light-emitting display apparatus includes a gate electrode of a thin-film transistor (TFT) and a gate wiring electrically connected to the gate...
TRANSPARENT ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF
MANUFACTURING TRANSPARENT ORGANIC LIGHT...
A transparent organic light-emitting display device may include a lower transparent substrate having a pixel region and a boundary region disposed between...
Light Emitting Device, Method of Preparing the Same and Device for
Fabricating the Same
A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition...
ORGANIC P-N JUNCTION BASED INFRARED DETECTION DEVICE AND MANUFACTURING
METHOD THEREOF AND INFRARED IMAGE...
The present invention provides an organic p-n junction based infrared detection device and a manufacturing method thereof and an infrared image detector using...
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME
A resistive random access memory including a substrate, a dielectric layer disposed on the substrate and at least one memory cell string is provided. The...
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is an electronic device including a switching element, wherein the switching element may include a first electrode, a second electrode, a switching...
Switching Components and Memory Units
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with...