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Patent # Description
2016/0118290 VERTICAL NO-SPIN PROCESS CHAMBER
A processing chamber includes a base, a cover, and grippers. The base includes a body, a mating surface, an inner zone cavity extending into the body, a...
2016/0118289 METHOD TO PROVIDE THE THINNEST AND VARIABLE SUBSTRATE THICKNESS FOR RELIABLE PLASTIC AND FLEXIBLE ELECTRONIC DEVICE
An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form...
2016/0118288 ROOM TEMPERATURE DEBONDABLE AND THERMALLY CURABLE COMPOSITIONS
Embodiments in accordance with the present invention are directed to a method of fabricating a semiconductor device wherein a device wafer substrate is coated...
2016/0118287 NON-TRANSPARENT MICROELECTRONIC GRADE GLASS AS A SUBSTRATE, TEMPORARY CARRIER OR WAFER
A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer...
2016/0118286 APPARATUS OF SEPARATING FLEXIBLE SUBSTRATE FROM GLASS SUBSTRATE AND MANUFACTURING EQUIPMENT THEREOF
An apparatus of separating a flexible substrate from a glass substrate comprises a cylinder-shaped roller; and a control unit connected to the roller...
2016/0118285 ELECTROSTATIC CHUCK AND BASE MEMBER FOR USE IN THE SAME
An electrostatic chuck includes a base member and an electrostatic chuck substrate. The base member includes a cooling path. The electrostatic chuck substrate...
2016/0118284 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a...
2016/0118283 ANODIZED METAL ON CARRIER WAFER
A method for processing a semiconductor wafer where an electrostatic layer is located on a surface of a handling wafer is used so the surface of the handling...
2016/0118282 BUFFER STATION WITH SINGLE EXIT-FLOW DIRECTION
A buffer for use in semiconductor processing tools is disclosed. The buffer may be used to temporarily store wafers after processing operations are performed...
2016/0118281 Transfer Printing Method
A transfer printing method provides a first wafer having a receiving surface, and removes a second die from a second wafer using a die moving member. Next, the...
2016/0118280 BUFFER STATION FOR THERMAL CONTROL OF SEMICONDUCTOR SUBSTRATES TRANSFERRED THERETHROUGH AND METHOD OF...
A buffer station for thermal control of semiconductor substrates in a semiconductor substrate processing system is configured to interface with first and...
2016/0118279 SYSTEMS, APPARATUS, AND METHODS FOR PURGING A SUBSTRATE CARRIER AT A FACTORY INTERFACE
Embodiments of the present invention provide systems, apparatus, and methods for purging a substrate carrier. Embodiments include a frame configured to sit...
2016/0118278 APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES AND HEATING SYSTEM FOR USE IN SUCH APPARATUS
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared...
2016/0118277 HIGH DEFINITION HEATER AND METHOD OF OPERATION
A heater system is provided that includes a base functional layer having at least one functional zone. A substrate is secured to the functional member, and a...
2016/0118276 HIGH DEFINITION HEATER AND METHOD OF OPERATION
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one...
2016/0118275 SUBSTRATE LIQUID PROCESSING APPARATUS
Disclosed is a substrate liquid processing apparatus including a substrate holding unit configured to hold a substrate; a processing liquid nozzle configured...
2016/0118274 CONVECTIVE WAFER HEATING BY IMPINGEMENT WITH HOT GAS
An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article of a predetermined diameter in a...
2016/0118273 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor package includes providing a package substrate, arranging a plurality of semiconductor devices in an array pattern on...
2016/0118272 Interconnect Structure for Wafer Level Package
A package includes a device die having a substrate. A molding compound contacts a sidewall of the substrate. A metal pad is over the substrate. A passivation...
2016/0118271 METHOD OF FABRICATING SEMICONDUCTOR PACKAGE HAVING AN INTERPOSER STRUCTURE
A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a...
2016/0118270 CARRIER AND A METHOD FOR PROCESSING A CARRIER
According to various embodiments, a carrier may include: a hollow chamber spaced apart from a surface of the carrier; and at least one support structure within...
2016/0118269 GATE SLOT OVERETCH CONTROL
A method of gate slot etching for a memory device. Gate electrode lines are formed from a layer of gate electrode material oriented in a first direction using...
2016/0118268 SELECTIVE ETCH FOR METAL-CONTAINING MATERIALS
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing...
2016/0118267 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer...
2016/0118266 Method for Fabricating Semiconductor Devices
The invention relates to a method for fabricating a semiconductor device. The method comprises forming a first etching layer and a second etching layer stacked...
2016/0118265 Spectrally and Temporally Engineered Processing using Photoelectrochemistry
Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and...
2016/0118264 ETCHING METHOD, ETCHING SOLUTION USED IN SAME, ETCHING SOLUTION KIT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least...
2016/0118263 SELF-CUT SIDEWALL IMAGE TRANSFER PROCESS
A plurality of mandrels is formed on a silicon substrate. The mandrels are spaced apart at a given pitch, wherein at least one of the plurality of mandrels is...
2016/0118262 ENHANCED THIN FILM DEPOSITION
Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods...
2016/0118261 TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one...
2016/0118260 METHODS FOR FORMING A METAL SILICIDE INTERCONNECTION NANOWIRE STRUCTURE
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one...
2016/0118259 ZrAlON FILMS
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices....
2016/0118258 SYSTEMS AND METHOD FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES
A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film...
2016/0118257 METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to...
2016/0118256 METHOD FOR SELECTIVITY ENHANCEMENT DURING DRY PLASMA ETCHING
A method of etching a layer on a substrate is described. The method includes disposing a substrate having a heterogeneous layer composed of a first material...
2016/0118255 METHODS OF FORMING STRAINED EPITAXIAL SEMICONDUCTOR MATERIAL(S) ABOVE A STRAIN-RELAXED BUFFER LAYER
One illustrative method disclosed herein includes, among other things, sequentially forming a first material layer, a first capping layer, a second material...
2016/0118254 OXIDE AND METHOD FOR FORMING THE SAME
An oxide that can be used for a semiconductor in a transistor or the like is formed. After a sputtering gas is supplied to a deposition chamber, a plasma...
2016/0118253 METAL OXIDE THIN FILM, METHOD OF PRODUCING SAME, AND COATING SOLUTION FOR FORMING METAL OXIDE THIN FILM USED IN...
A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to...
2016/0118252 Method Of Forming Silicon On A Substrate
A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate,...
2016/0118251 METHODS OF FORMING DOPED EPITAXIAL SiGe MATERIAL ON SEMICONDUCTOR DEVICES
One illustrative method disclosed herein includes, among other things, performing first and second in situ doping, epitaxial deposition processes to form first...
2016/0118250 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer having a first...
2016/0118249 NANOSHAPE PATTERNING TECHNIQUES THAT ALLOW HIGH-SPEED AND LOW-COST FABRICATION OF NANOSHAPE STRUCTURES
A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a...
2016/0118248 CRYSTAL FORMATION ON NON-LATTICE MATCHED SUBSTRATES
A semiconductor structure can be created by forming an insulator layer over a surface of a substrate. An intermediate layer can be formed on top of the...
2016/0118247 METHOD OF FORMING SEMICONDUCTOR DEVICE
Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can...
2016/0118246 GAPFILL OF VARIABLE ASPECT RATIO FEATURES WITH A COMPOSITE PEALD AND PECVD METHOD
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for...
2016/0118245 METHOD FOR FABRICATING QUASI-SOI SOURCE/DRAIN FIELD EFFECT TRANSISTOR DEVICE
The present invention discloses a method for fabricating a quasi-SOI source/drain field effect transistor device, which comprises the steps of forming an...
2016/0118244 THIN FILM TRANSISTOR ELEMENT, PRODUCTION METHOD FOR SAME, AND DISPLAY DEVICE
A thin-film transistor includes: a gate electrode; a source electrode; a drain electrode; a channel layer that is in contact with the source electrode and the...
2016/0118243 METHODS FOR PREPARING A TITANIUM OXIDE FILM AND A COMPOSITE FILM COMPRISING THE SAME
The present invention relates to a method for preparing a titanium oxide film and a method for preparing a composite film comprising a titanium oxide film....
2016/0118242 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM
Disclosed is a substrate processing method. The method includes: supplying a rinse liquid, IPA, a first fluorine-containing organic solvent, a second...
2016/0118241 SUBSTRATE TREATING APPARATUS AND SUBSTRATE CLEANING METHOD
Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing defining a space for treating a substrate therein, a spin head...
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