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VERTICAL NO-SPIN PROCESS CHAMBER
A processing chamber includes a base, a cover, and grippers. The base includes a body, a mating surface, an inner zone cavity extending into the body, a...
METHOD TO PROVIDE THE THINNEST AND VARIABLE SUBSTRATE THICKNESS FOR
RELIABLE PLASTIC AND FLEXIBLE ELECTRONIC DEVICE
An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form...
ROOM TEMPERATURE DEBONDABLE AND THERMALLY CURABLE COMPOSITIONS
Embodiments in accordance with the present invention are directed to a method of fabricating a semiconductor device wherein a device wafer substrate is coated...
NON-TRANSPARENT MICROELECTRONIC GRADE GLASS AS A SUBSTRATE, TEMPORARY
CARRIER OR WAFER
A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer...
APPARATUS OF SEPARATING FLEXIBLE SUBSTRATE FROM GLASS SUBSTRATE AND
MANUFACTURING EQUIPMENT THEREOF
An apparatus of separating a flexible substrate from a glass substrate comprises a cylinder-shaped roller; and a control unit connected to the roller...
ELECTROSTATIC CHUCK AND BASE MEMBER FOR USE IN THE SAME
An electrostatic chuck includes a base member and an electrostatic chuck substrate. The base member includes a cooling path. The electrostatic chuck substrate...
PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a...
ANODIZED METAL ON CARRIER WAFER
A method for processing a semiconductor wafer where an electrostatic layer is located on a surface of a handling wafer is used so the surface of the handling...
BUFFER STATION WITH SINGLE EXIT-FLOW DIRECTION
A buffer for use in semiconductor processing tools is disclosed. The buffer may be used to temporarily store wafers after processing operations are performed...
Transfer Printing Method
A transfer printing method provides a first wafer having a receiving surface, and removes a second die from a second wafer using a die moving member. Next, the...
BUFFER STATION FOR THERMAL CONTROL OF SEMICONDUCTOR SUBSTRATES TRANSFERRED
THERETHROUGH AND METHOD OF...
A buffer station for thermal control of semiconductor substrates in a semiconductor substrate processing system is configured to interface with first and...
SYSTEMS, APPARATUS, AND METHODS FOR PURGING A SUBSTRATE CARRIER AT A
Embodiments of the present invention provide systems, apparatus, and methods for purging a substrate carrier. Embodiments include a frame configured to sit...
APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES AND HEATING SYSTEM
FOR USE IN SUCH APPARATUS
An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared...
HIGH DEFINITION HEATER AND METHOD OF OPERATION
A heater system is provided that includes a base functional layer having at least one functional zone. A substrate is secured to the functional member, and a...
HIGH DEFINITION HEATER AND METHOD OF OPERATION
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one...
SUBSTRATE LIQUID PROCESSING APPARATUS
Disclosed is a substrate liquid processing apparatus including a substrate holding unit configured to hold a substrate; a processing liquid nozzle configured...
CONVECTIVE WAFER HEATING BY IMPINGEMENT WITH HOT GAS
An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article of a predetermined diameter in a...
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor package includes providing a package substrate, arranging a plurality of semiconductor devices in an array pattern on...
Interconnect Structure for Wafer Level Package
A package includes a device die having a substrate. A molding compound contacts a sidewall of the substrate. A metal pad is over the substrate. A passivation...
METHOD OF FABRICATING SEMICONDUCTOR PACKAGE HAVING AN INTERPOSER STRUCTURE
A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a...
CARRIER AND A METHOD FOR PROCESSING A CARRIER
According to various embodiments, a carrier may include: a hollow chamber spaced apart from a surface of the carrier; and at least one support structure within...
GATE SLOT OVERETCH CONTROL
A method of gate slot etching for a memory device. Gate electrode lines are formed from a layer of gate electrode material oriented in a first direction using...
SELECTIVE ETCH FOR METAL-CONTAINING MATERIALS
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing...
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer...
Method for Fabricating Semiconductor Devices
The invention relates to a method for fabricating a semiconductor device. The method comprises forming a first etching layer and a second etching layer stacked...
Spectrally and Temporally Engineered Processing using
Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and...
ETCHING METHOD, ETCHING SOLUTION USED IN SAME, ETCHING SOLUTION KIT, AND
METHOD FOR MANUFACTURING SEMICONDUCTOR...
There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least...
SELF-CUT SIDEWALL IMAGE TRANSFER PROCESS
A plurality of mandrels is formed on a silicon substrate. The mandrels are spaced apart at a given pitch, wherein at least one of the plurality of mandrels is...
ENHANCED THIN FILM DEPOSITION
Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods...
TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one...
METHODS FOR FORMING A METAL SILICIDE INTERCONNECTION NANOWIRE STRUCTURE
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one...
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices....
SYSTEMS AND METHOD FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES
A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film...
METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to...
METHOD FOR SELECTIVITY ENHANCEMENT DURING DRY PLASMA ETCHING
A method of etching a layer on a substrate is described. The method includes disposing a substrate having a heterogeneous layer composed of a first material...
METHODS OF FORMING STRAINED EPITAXIAL SEMICONDUCTOR MATERIAL(S) ABOVE A
STRAIN-RELAXED BUFFER LAYER
One illustrative method disclosed herein includes, among other things, sequentially forming a first material layer, a first capping layer, a second material...
OXIDE AND METHOD FOR FORMING THE SAME
An oxide that can be used for a semiconductor in a transistor or the like is formed. After a sputtering gas is supplied to a deposition chamber, a plasma...
METAL OXIDE THIN FILM, METHOD OF PRODUCING SAME, AND COATING SOLUTION FOR
FORMING METAL OXIDE THIN FILM USED IN...
A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to...
Method Of Forming Silicon On A Substrate
A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate,...
METHODS OF FORMING DOPED EPITAXIAL SiGe MATERIAL ON SEMICONDUCTOR DEVICES
One illustrative method disclosed herein includes, among other things, performing first and second in situ doping, epitaxial deposition processes to form first...
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer having a first...
NANOSHAPE PATTERNING TECHNIQUES THAT ALLOW HIGH-SPEED AND LOW-COST
FABRICATION OF NANOSHAPE STRUCTURES
A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a...
CRYSTAL FORMATION ON NON-LATTICE MATCHED SUBSTRATES
A semiconductor structure can be created by forming an insulator layer over a surface of a substrate. An intermediate layer can be formed on top of the...
METHOD OF FORMING SEMICONDUCTOR DEVICE
Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can...
GAPFILL OF VARIABLE ASPECT RATIO FEATURES WITH A COMPOSITE PEALD AND PECVD
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for...
METHOD FOR FABRICATING QUASI-SOI SOURCE/DRAIN FIELD EFFECT TRANSISTOR
The present invention discloses a method for fabricating a quasi-SOI source/drain field effect transistor device, which comprises the steps of forming an...
THIN FILM TRANSISTOR ELEMENT, PRODUCTION METHOD FOR SAME, AND DISPLAY
A thin-film transistor includes: a gate electrode; a source electrode; a drain electrode; a channel layer that is in contact with the source electrode and the...
METHODS FOR PREPARING A TITANIUM OXIDE FILM AND A COMPOSITE FILM
COMPRISING THE SAME
The present invention relates to a method for preparing a titanium oxide film and a method for preparing a composite film comprising a titanium oxide film....
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE
Disclosed is a substrate processing method. The method includes: supplying a rinse liquid, IPA, a first fluorine-containing organic solvent, a second...
SUBSTRATE TREATING APPARATUS AND SUBSTRATE CLEANING METHOD
Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing defining a space for treating a substrate therein, a spin head...