At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.
SPLIT GATE FLASH CELL SEMICONDUCTOR DEVICE
A split gate flash cell device with floating gate transistors is provided. Each floating gate transistor is formed by providing a floating gate transistor...
A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is...
A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate...
ACTIVE DEVICE CIRCUIT SUBSTRATE
An active device circuit substrate includes a substrate, a plurality of active devices, and a first planarization layer. Each active device includes a gate...
Thin film transistors with metal oxynitride active channels for electronic
In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active...
Methods of Forming Transistors
Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with...
FINFET DEVICE INCLUDING A UNIFORM SILICON ALLOY FIN
A method includes forming a fin on a semiconductor substrate and forming recesses on sidewalls of the fin. A silicon alloy material is formed in the recesses....
HYBRID ORIENTATION FIN FIELD EFFECT TRANSISTOR AND PLANAR FIELD EFFECT
A substrate including a handle substrate, a lower insulator layer, a buried semiconductor layer, an upper insulator layer, and a top semiconductor layer is...
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active...
LDMOS TRANSISTORS FOR CMOS TECHNOLOGIES AND AN ASSOCIATED PRODUCTION
In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench...
SEGMENTED POWER TRANSISTOR
A power transistor includes multiple substantially parallel transistor fingers, where each finger includes a conductive source stripe and a conductive drain...
INSULATED GATE SEMICONDUCTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE
A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A...
SILICON CARBIDE SEMICONDUCTOR DEVICE
A trench reaches a first layer of a first conductivity type from a second main surface through a third layer of the first conductivity type and a second layer...
SILICON CARBIDE FIELD EFFECT TRANSISTOR
A silicon carbide field effect transistor includes a silicon carbide substrate, an n-type drift layer, a p-type epitaxy layer, a source region, a trench gate,...
Semiconductor device and method for manufacturing the same
A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active...
TFT SUBSTRATE WITH VARIABLE DIELECTRIC THICKNESS
A transistor includes a substrate and an electrically conductive gate over the substrate. The gate has a gate length. A source electrode and a drain electrode...
FinFETs with Source/Drain Cladding
A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor fin is between opposite portions...
CARBON DOPING SEMICONDUCTOR DEVICES
A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the...
Field Effect Transistor with Conduction Band Electron Channel and
A uni-terminal transistor device is described. In one embodiment, an n-channel transistor having p-terminal characteristics comprises a first semiconductor...
MULTICHANNEL DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF MAKING THE
A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge...
A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas...
TRANSISTOR AND FABRICATION METHOD THEREOF
A method for forming transistors is provided. The method includes providing a substrate having a base and at least a fin on the base; and forming a gate layer...
SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD,
AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a substrate having an SiGe film or Ge film exposed on at least a portion of a surface thereof, a process chamber...
METHOD OF IMPROVED CA/CB CONTACT AND DEVICE THEREOF
Processes for forming merged CA/CB constructs and the resulting devices are disclosed. Embodiments include providing a replacement metal gate (RMG) between...
LATTICE MATCHED ASPECT RATIO TRAPPING TO REDUCE DEFECTS IN III-V LAYER
DIRECTLY GROWN ON SILICON
A structure having application to electronic devices includes a III-V layer having high crystal quality and a low defect density on a lattice mismatched...
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts...
SEMICONDUCTOR DEVICE WITH IMPROVED INSULATED GATE
A semiconductor device includes a semiconductor body and an insulated gate contact on a surface of the semiconductor body over an active channel in the...
A semiconductor device includes a pillar-shaped silicon layer on a fin-shaped silicon layer. A gate insulating film and a metal gate electrode are around the...
METAL GATE STRUCTURE AND METHOD OF FORMING THE SAME
The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function...
THERMAL TREATED SEMICONDUCTOR/GATE DIELECTRIC INTERFACE FOR GROUP IIIA-N
A method of fabricating a gate stack for a power transistor device includes thermally oxidizing a surface of a Group IIIA-N layer on a substrate to form a...
ELECTRONIC DEVICE FOR DATA STORAGE AND A METHOD OF PRODUCING AN ELECTRONIC
DEVICE FOR DATA STORAGE
An electronic device for data storage and a method of producing an electronic device for data storage includes a memory storage element arranged to represent...
MEMORY DEVICES CAPABLE OF REDUCING LATERAL MOVEMENT OF CHARGES
Memory devices are provided, the memory devices include a tunneling insulating layer disposed on a substrate, a charge storage layer disposed on the tunneling...
METHOD OF MAKING A SPLIT GATE MEMORY CELL
A method includes forming a first dielectric layer over a memory region and a second dielectric layer over a logic region. A first polysilicon layer is formed...
Semiconductor Devices Including Contact Patterns Having a Rising Portion
and a Recessed Portion
Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near...
Semiconductor device and manufacturing method therefor
A semiconductor device comprises: a semiconductor device active region; an electrode shape controlling layer disposed on the semiconductor device active...
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor structure. The semiconductor structure includes a circuit region, a seal ring region and an assembly isolation...
METHOD OF PREPARING MONOATOMIC LAYER BLACK PHOSPHOROUS BY IRRADIATING
A method of preparing monoatomic layer black phosphorous by irradiating an ultrasound includes: putting black phosphorus into a solvent and irradiating the...
METHOD AND STRUCTURE TO IMPROVE FILM STACK WITH SENSITIVE AND REACTIVE
Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a...
SUBSTRATE WITH SILICON CARBIDE FILM, METHOD FOR PRODUCING SUBSTRATE WITH
SILICON CARBIDE FILM, AND...
A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film...
SUBSTRATE WITH SILICON CARBIDE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR
PRODUCING SUBSTRATE WITH SILICON...
A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask 4. The SiC film has a film 31 including openings 35 on the silicon...
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an...
SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL WAFER
A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot...
GRAPHENE LAYER, METHOD OF FORMING THE SAME, DEVICE INCLUDING GRAPHENE
LAYER AND METHOD OF MANUFACTURING THE DEVICE
A graphene layer, a method of forming the graphene layer, a device including the graphene layer, and a method of manufacturing the device are provided. The...
TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF
Transistor structures and methods of fabricating transistor structures are provided. The methods include: fabricating a transistor structure at least partially...
III-Nitride Semiconductor Structure with Intermediate and Transition
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor...
A gate pad electrode and a source electrode are disposed, separately from one another, on the front surface of a super junction semiconductor substrate. A MOS...
Provided is an integrated circuit having a LOCOS-drain type MOS transistor mounted thereon in which, even in the case of poor pattern formation, a withstand...
SEMICONDUCTOR STRUCTURE INCLUDING A DOPED BUFFER LAYER AND A CHANNEL LAYER
AND A PROCESS OF FORMING THE SAME
A semiconductor structure can include a substrate, a high-voltage blocking layer overlying the substrate, a doped buffer layer overlying the high-voltage...
STACKED THIN CHANNELS FOR BOOST AND LEAKAGE IMPROVEMENT
A hollow-channel memory device comprises a source layer, a first hollow-channel pillar structure formed on the source layer, and a second hollow-channel pillar...
S/D CONNECTION TO INDIVIDUAL CHANNEL LAYERS IN A NANOSHEET FET
A field effect transistor (FET) and a method to form the FET are disclosed. The FET comprises a channel region comprising a nanosheet layer/sacrificial layer...