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Patent # Description
2016/0126359 SPLIT GATE FLASH CELL SEMICONDUCTOR DEVICE
A split gate flash cell device with floating gate transistors is provided. Each floating gate transistor is formed by providing a floating gate transistor...
2016/0126358 THIN-FILM TRANSISTOR
A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is...
2016/0126357 SEMICONDUCTOR DEVICE
A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate...
2016/0126356 ACTIVE DEVICE CIRCUIT SUBSTRATE
An active device circuit substrate includes a substrate, a plurality of active devices, and a first planarization layer. Each active device includes a gate...
2016/0126355 Thin film transistors with metal oxynitride active channels for electronic displays
In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active...
2016/0126354 Methods of Forming Transistors
Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with...
2016/0126353 FINFET DEVICE INCLUDING A UNIFORM SILICON ALLOY FIN
A method includes forming a fin on a semiconductor substrate and forming recesses on sidewalls of the fin. A silicon alloy material is formed in the recesses....
2016/0126352 HYBRID ORIENTATION FIN FIELD EFFECT TRANSISTOR AND PLANAR FIELD EFFECT TRANSISTOR
A substrate including a handle substrate, a lower insulator layer, a buried semiconductor layer, an upper insulator layer, and a top semiconductor layer is...
2016/0126351 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active...
2016/0126350 LDMOS TRANSISTORS FOR CMOS TECHNOLOGIES AND AN ASSOCIATED PRODUCTION METHOD
In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench...
2016/0126349 SEGMENTED POWER TRANSISTOR
A power transistor includes multiple substantially parallel transistor fingers, where each finger includes a conductive source stripe and a conductive drain...
2016/0126348 INSULATED GATE SEMICONDUCTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE AND METHOD
A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A...
2016/0126347 SILICON CARBIDE SEMICONDUCTOR DEVICE
A trench reaches a first layer of a first conductivity type from a second main surface through a third layer of the first conductivity type and a second layer...
2016/0126346 SILICON CARBIDE FIELD EFFECT TRANSISTOR
A silicon carbide field effect transistor includes a silicon carbide substrate, an n-type drift layer, a p-type epitaxy layer, a source region, a trench gate,...
2016/0126345 Semiconductor device and method for manufacturing the same
A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active...
2016/0126344 TFT SUBSTRATE WITH VARIABLE DIELECTRIC THICKNESS
A transistor includes a substrate and an electrically conductive gate over the substrate. The gate has a gate length. A source electrode and a drain electrode...
2016/0126343 FinFETs with Source/Drain Cladding
A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor fin is between opposite portions...
2016/0126342 CARBON DOPING SEMICONDUCTOR DEVICES
A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the...
2016/0126341 Field Effect Transistor with Conduction Band Electron Channel and Uni-Terminal Response
A uni-terminal transistor device is described. In one embodiment, an n-channel transistor having p-terminal characteristics comprises a first semiconductor...
2016/0126340 MULTICHANNEL DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF MAKING THE SAME
A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge...
2016/0126339 HIGH-ELECTRON-MOBILITY TRANSISTOR
A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas...
2016/0126338 TRANSISTOR AND FABRICATION METHOD THEREOF
A method for forming transistors is provided. The method includes providing a substrate having a base and at least a fin on the base; and forming a gate layer...
2016/0126337 SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a substrate having an SiGe film or Ge film exposed on at least a portion of a surface thereof, a process chamber...
2016/0126336 METHOD OF IMPROVED CA/CB CONTACT AND DEVICE THEREOF
Processes for forming merged CA/CB constructs and the resulting devices are disclosed. Embodiments include providing a replacement metal gate (RMG) between...
2016/0126335 LATTICE MATCHED ASPECT RATIO TRAPPING TO REDUCE DEFECTS IN III-V LAYER DIRECTLY GROWN ON SILICON
A structure having application to electronic devices includes a III-V layer having high crystal quality and a low defect density on a lattice mismatched...
2016/0126334 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts...
2016/0126333 SEMICONDUCTOR DEVICE WITH IMPROVED INSULATED GATE
A semiconductor device includes a semiconductor body and an insulated gate contact on a surface of the semiconductor body over an active channel in the...
2016/0126332 SEMICONDUCTOR DEVICE
A semiconductor device includes a pillar-shaped silicon layer on a fin-shaped silicon layer. A gate insulating film and a metal gate electrode are around the...
2016/0126331 METAL GATE STRUCTURE AND METHOD OF FORMING THE SAME
The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function...
2016/0126330 THERMAL TREATED SEMICONDUCTOR/GATE DIELECTRIC INTERFACE FOR GROUP IIIA-N DEVICES
A method of fabricating a gate stack for a power transistor device includes thermally oxidizing a surface of a Group IIIA-N layer on a substrate to form a...
2016/0126329 ELECTRONIC DEVICE FOR DATA STORAGE AND A METHOD OF PRODUCING AN ELECTRONIC DEVICE FOR DATA STORAGE
An electronic device for data storage and a method of producing an electronic device for data storage includes a memory storage element arranged to represent...
2016/0126328 MEMORY DEVICES CAPABLE OF REDUCING LATERAL MOVEMENT OF CHARGES
Memory devices are provided, the memory devices include a tunneling insulating layer disposed on a substrate, a charge storage layer disposed on the tunneling...
2016/0126327 METHOD OF MAKING A SPLIT GATE MEMORY CELL
A method includes forming a first dielectric layer over a memory region and a second dielectric layer over a logic region. A first polysilicon layer is formed...
2016/0126326 Semiconductor Devices Including Contact Patterns Having a Rising Portion and a Recessed Portion
Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near...
2016/0126325 Semiconductor device and manufacturing method therefor
A semiconductor device comprises: a semiconductor device active region; an electrode shape controlling layer disposed on the semiconductor device active...
2016/0126324 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor structure. The semiconductor structure includes a circuit region, a seal ring region and an assembly isolation...
2016/0126323 METHOD OF PREPARING MONOATOMIC LAYER BLACK PHOSPHOROUS BY IRRADIATING ULTRASOUND
A method of preparing monoatomic layer black phosphorous by irradiating an ultrasound includes: putting black phosphorus into a solvent and irradiating the...
2016/0126322 METHOD AND STRUCTURE TO IMPROVE FILM STACK WITH SENSITIVE AND REACTIVE LAYERS
Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a...
2016/0126321 SUBSTRATE WITH SILICON CARBIDE FILM, METHOD FOR PRODUCING SUBSTRATE WITH SILICON CARBIDE FILM, AND...
A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film...
2016/0126320 SUBSTRATE WITH SILICON CARBIDE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SUBSTRATE WITH SILICON...
A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask 4. The SiC film has a film 31 including openings 35 on the silicon...
2016/0126319 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an...
2016/0126318 SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL WAFER
A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot...
2016/0126317 GRAPHENE LAYER, METHOD OF FORMING THE SAME, DEVICE INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE DEVICE
A graphene layer, a method of forming the graphene layer, a device including the graphene layer, and a method of manufacturing the device are provided. The...
2016/0126316 TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF
Transistor structures and methods of fabricating transistor structures are provided. The methods include: fabricating a transistor structure at least partially...
2016/0126315 III-Nitride Semiconductor Structure with Intermediate and Transition Layers
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor...
2016/0126314 SEMICONDUCTOR DEVICE
A gate pad electrode and a source electrode are disposed, separately from one another, on the front surface of a super junction semiconductor substrate. A MOS...
2016/0126313 SEMICONDUCTOR DEVICE
Provided is an integrated circuit having a LOCOS-drain type MOS transistor mounted thereon in which, even in the case of poor pattern formation, a withstand...
2016/0126312 SEMICONDUCTOR STRUCTURE INCLUDING A DOPED BUFFER LAYER AND A CHANNEL LAYER AND A PROCESS OF FORMING THE SAME
A semiconductor structure can include a substrate, a high-voltage blocking layer overlying the substrate, a doped buffer layer overlying the high-voltage...
2016/0126311 STACKED THIN CHANNELS FOR BOOST AND LEAKAGE IMPROVEMENT
A hollow-channel memory device comprises a source layer, a first hollow-channel pillar structure formed on the source layer, and a second hollow-channel pillar...
2016/0126310 S/D CONNECTION TO INDIVIDUAL CHANNEL LAYERS IN A NANOSHEET FET
A field effect transistor (FET) and a method to form the FET are disclosed. The FET comprises a channel region comprising a nanosheet layer/sacrificial layer...
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