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Patent # Description
2016/0126109 Method for Manufacturing a Transistor Device Comprising a Germanium Channel Material on a Silicon Based...
Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow...
2016/0126108 METHOD OF REDUCING GATE LEAKAGE IN A MOS DEVICE BY IMPLANTING GATE LEAKAGE REDUCING SPECIES INTO THE EDGE OF...
In a MOS device, gate leakage is reduced by implanting gate oxide leakage reduction species such as nitrogen into the gate oxide along the edges of the gate to...
2016/0126107 ETCHANT COMPOSITIONS FOR NITRIDE LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
An etchant composition for nitride layers includes phosphoric acid in an amount ranging from about 80 weight percent to about 90 weight percent, a ...
2016/0126106 SELECTIVE GROWTH METHOD AND SUBSTRATE PROCESSING APPARATUS
There is provided a selective growth method of selectively growing a thin film on exposed surfaces of an underlying insulation film and an underlying metal...
2016/0126105 System and Method for Damage Reduction in Light-Assisted Processes
A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the...
2016/0126104 SYSTEMS AND METHODS FOR ELECTROCHEMICAL DEPOSITION ON A WORKPIECE INCLUDING REMOVING CONTAMINATION FROM SEED...
In one embodiment of the present disclosure, a method for electrochemical deposition on a workpiece includes (a) obtaining a workpiece including a feature; (b)...
2016/0126103 RECESS FILLING METHOD AND PROCESSING APPARATUS
There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface...
2016/0126102 DIRECTIONAL PRE-CLEAN IN SILICIDE AND CONTACT FORMATION
A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and...
2016/0126101 METHOD FOR FORMING A VARIABLE THICKNESS DIELECTRIC STACK
Producing a variable thickness dielectric stack includes providing a substrate with a first patterned conductive layer thereon. A first dielectric thin film is...
2016/0126100 SEMICONDUCTOR DEVICE WITH EQUIPOTENTIAL RING CONTACT AT CURVED PORTION OF EQUIPOTENTIAL RING ELECTRODE AND...
A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The...
2016/0126099 SILICON-BASED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front...
2016/0126098 SYSTEM AND APPARATUS FOR EFFICIENT DEPOSITION OF TRANSPARENT CONDUCTIVE OXIDE
A substrate processing system that includes a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing...
2016/0126097 DIELECTRIC TONE INVERSION MATERIALS
A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on ...
2016/0126096 METHOD OF FORMING AN EPITAXIAL LAYER ON A SUBSTRATE, AND APPARATUS AND SYSTEM FOR PERFORMING THE SAME
In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed...
2016/0126095 METHOD FOR DETERMINING PREFERENTIAL DEPOSITION PARAMETERS FOR A THIN LAYER OF III-V MATERIAL
First, second and third series of samples are successively made so as to determine the influence of the deposition parameters on the crystallographic quality...
2016/0126094 LATTICE MATCHED ASPECT RATIO TRAPPING TO REDUCE DEFECTS IN III-V LAYER DIRECTLY GROWN ON SILICON
A structure having application to electronic devices includes a III-V layer having high crystal quality and a low defect density on a lattice mismatched...
2016/0126093 METHOD TO GROW THIN EPITAXIAL FILMS AT LOW TEMPERATURE
Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation,...
2016/0126092 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an...
2016/0126091 CLEANING PROCESS FOR OXIDE
A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the...
2016/0126090 Method for Processing a Semiconductor Wafer Using a Thin Edge Carrier Ring
A method for processing a semiconductor wafer in a PECVD deposition chamber with a circular pedestal and a recessed portion formed around the outer top surface...
2016/0126089 FLOWABLE FILM CURING PENETRATION DEPTH IMPROVEMENT AND STRESS TUNING
Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the...
2016/0126088 METHOD OF PRODUCING LAYER STRUCTURE, LAYER STRUCTURE, AND METHOD OF FORMING PATTERNS
A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate...
2016/0126087 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device according to an embodiment includes forming an opening in a surface of an insulating layer which is provided...
2016/0126086 NON-PLANAR SEMICONDUCTOR DEVICE WITH ASPECT RATIO TRAPPING
As disclosed herein, a semiconductor device with aspect ratio trapping is provided, including a bulk substrate, a plurality of isolation pillars formed on the...
2016/0126085 METHOD AND DEVICE FOR TREATING A SUBSTRATE SURFACE
A method for treatment of a substrate surface of a substrate by applying a liquid to the substrate surface, the liquid which has been applied to the substrate...
2016/0126084 Method of producing a halogen lamp and halogen lamp
The present invention relates to a method for producing a halogen lamp, comprising the following steps: providing a glass tube blanket; dip-coating of the...
2016/0126083 Method of Generating Electric Field for Manipulating Charged Particles
A device for manipulating charged particles using an axial electric field as they travel along a longitudinal axis of the device is disclosed. The method...
2016/0126082 MASS ANALYZING ELECTROMAGNET AND ION BEAM IRRADIATION APPARATUS
A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion...
2016/0126081 APPARATUS FOR CHARGING OR ADJUSTING THE CHARGE OF AEROSOL PARTICLES
The invention provides an apparatus for charging or altering the charge of gas-entrained particles in an aerosol, the apparatus comprising: (a) an ion generating...
2016/0126080 SYSTEM AND METHOD FOR LIQUID EXTRACTION ELECTROSPRAY-ASSISTED SAMPLE TRANSFER TO SOLUTION FOR CHEMICAL ANALYSIS
A system for sampling a surface includes a surface sampling probe comprising a solvent liquid supply conduit and a distal end, and a sample collector for...
2016/0126079 Method and Device for Ionizing Particles of a Sample Gas Flow
A device for ionizing sample particles of a sample gas flow comprises a first flow tube for providing the sample gas flow, and an introducing means for...
2016/0126078 INTEGRATED MASS SPECTROMETRY SYSTEMS
The disclosure features mass spectrometry systems that include: an ion source; a module featuring an ion trap, an ion detector, and a module housing that at...
2016/0126077 Method and Apparatus for Reacting Ions
A method of mass spectrometry is disclosed having a mode comprising: providing a source of precursor ions and reagent ions for reacting with said precursor...
2016/0126076 Inline Ion Reaction Device Cell and Method of Operation
A method and apparatus for conducting ion to charged species reactions, more particularly reactions wherein the charged species is an electron, such as ECD....
2016/0126075 MASS SPECTROMETRY METHOD FOR MEASURING VITAMIN B6 IN BODY FLUIDS
Provided are methods of detecting the presence or amount of the active form of vitamin B6, pyridoxal 5'-phosphate, in a body fluid sample using tandem mass...
2016/0126074 Method of Calibrating Ion Signals
A method of mass or ion mobility spectrometry is disclosed comprising: providing an ion source for generating analyte ions and reference ions; providing a mass...
2016/0126073 PATHOLOGY INTERFACE SYSTEM FOR MASS SPECTROMETRY
A diagnostic system and method that includes a non-transitory computer readable medium storing machine executable instructions executable by the processor for...
2016/0126072 Sputtering Target And Method For Production Thereof
A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an...
2016/0126071 METHOD OF ETCHING ORGANIC FILM
An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a...
2016/0126070 Arrangements for Manipulating Plasma Confinement Within a Plasma Processing System and Methods Thereof
Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower...
2016/0126069 PULSE PLASMA APPARATUS AND DRIVE METHOD THEREOF
A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second...
2016/0126068 DIAGNOSIS SYSTEM FOR PULSED PLASMA
A diagnosis system for pulsed plasma includes an optical emission sensor (OES) to receive light generated the pulsed plasma, the pulsed plasma having been...
2016/0126067 PLASMA PROCESSING APPARATUS
A resonance frequency is adjusted or optimized by shifting the resonance frequency without reducing an impedance function or a withstand voltage characteristic...
2016/0126066 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing...
2016/0126065 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation...
2016/0126064 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and...
2016/0126063 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an...
2016/0126062 DRAWING APPARATUS, LITHOGRAPHY SYSTEM, PATTERN DATA CREATION METHOD, DRAWING METHOD, AND METHOD OF...
At least one drawing apparatus according to an exemplary embodiment includes a plurality of optical systems and repeats an operation to draw a pattern on a...
2016/0126061 DRAWING APPARATUS AND DEVICE MANUFACTURING METHOD
In at least one embodiment, a control unit of a drawing apparatus determines a distance by which the drawing apparatus causes a stage to move in a direction...
2016/0126060 ENDPOINTING FOR FOCUSED ION BEAM PROCESSING
To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly...
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