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Patent # Description
2016/0133751 HYDROGENATED P-CHANNEL METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS
This disclosure provides p-type metal oxide semiconductor materials that display good thin film transistor (TFT) characteristics. Also provided are TFTs...
2016/0133750 FABRICATION PROCESS FOR MITIGATING EXTERNAL RESISTANCE OF A MULTIGATE DEVICE
A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material,...
2016/0133749 SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS
A semiconductor device having tipless epitaxial source/drain regions and a method for its formation are described. In an embodiment, the semiconductor device...
2016/0133748 SEMICONDUCTOR DEVICES INCLUDING SILICIDE REGIONS AND METHODS OF FABRICATING THE SAME
A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or...
2016/0133747 SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL
A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain...
2016/0133746 High Mobility Devices and Methods of Forming Same
An embodiment method includes forming a first fin and a second fin over a semiconductor substrate. The first fin includes a first semiconductor strip of a...
2016/0133745 FABRICATING METAL SOURCE-DRAIN STRESSOR IN A MOS DEVICE CHANNEL
Exemplary embodiments provide methods and systems for fabricating a metal source-drain stressor in a MOS device channel having improved tensile stress. Aspects...
2016/0133744 TRANSISTOR AND FABRICATION METHOD THEREOF
A method for forming transistors includes providing a substrate having at least a dummy gate structure having at least dummy gate layer; forming a first...
2016/0133743 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer made of first conductivity type semiconductor layer; a second conductivity type well region formed on the...
2016/0133742 SEMICONDUCTOR DEVICE HAVING TRENCH GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device of the present invention includes a semiconductor layer in which a gate trench is formed, a gate insulating film formed along an inner...
2016/0133741 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a MOSFET and a peripheral high-breakdown-voltage structure. A source region has a first recess. Trenches extend...
2016/0133740 SEMICONDUCTOR DEVICE COMPRISING A MULTI-LAYER CHANNEL REGION
One illustrative device disclosed herein includes, among other things, a substrate made of a first semiconductor material, at least one layer of insulating...
2016/0133739 SEMICONDUCTOR DEVICE
A semiconductor device includes a source electrode portion and a drain electrode formed on a semiconductor stacked body so as to be at an interval from each...
2016/0133738 HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
A high electron mobility transistor is realized in the present invention by a gate recessed structure, a high permittivity oxide layer and a nitride-based...
2016/0133737 CARBON DOPING SEMICONDUCTOR DEVICES
A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the...
2016/0133736 SILICON CARBIDE STATIC INDUCTION TRANSISTOR AND PROCESS FOR MAKING A SILICON CARBIDE STATIC INDUCTION TRANSISTOR
A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of the...
2016/0133735 COMMON-SUBSTRATE SEMICONDUCTOR DEVICES HAVING NANOWIRES OR SEMICONDUCTOR BODIES WITH DIFFERING MATERIAL...
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such...
2016/0133734 GATED THYRISTOR POWER DEVICE
An improved gated thyristor that utilizes less silicon area than IGBT, BIPOLARs or MOSFETs sized for the same application is provided. Embodiments of the...
2016/0133733 POWER SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
A power semiconductor component includes a semiconductor substrate, a MOS layer, a N-type buffer layer, a P-type injection layer, a backside trench layer and a...
2016/0133732 SEMICONDUCTOR DEVICE
In a bipolar transistor, a collector layer includes three semiconductor layers: an n-type GaAs layer (Si concentration: about 5.times.10.sup.15 cm.sup.-3,...
2016/0133731 LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING HIGH CURRENT-DRIVING CAPABILITY
A bipolar junction transistor includes a common base region, a plurality of emitter regions disposed in the common base region and arrayed to be spaced apart...
2016/0133730 JUNCTIONLESS TUNNEL FET WITH METAL-INSULATOR TRANSITION MATERIAL
Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially...
2016/0133729 METAL OXIDE THIN FILM TRANSISTOR AND A PREPARATION METHOD THEREOF
A Metal Oxide Thin Film Transistor (MOTFT) and a preparation method thereof are provided. The preparation method includes the following steps in turn: Step a:...
2016/0133728 METHODS OF FORMING SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE
Methods of forming a semiconductor device are provided. An active region is formed on a substrate. A temporary gate crossing the active region and a capping...
2016/0133727 SEMICONDUCTOR JUNCTION FORMATION
A semiconductor structure, such as a FinFET, etc., includes a bi-portioned junction. The bi-portioned junction includes a doped outer portion and a doped inner...
2016/0133726 METHODS OF FORMING PRODUCTS WITH FINFET SEMICONDUCTOR DEVICES WITHOUT REMOVING FINS IN CERTAIN AREAS OF THE PRODUCT
One illustrative method disclosed herein includes, among other things, forming a first plurality of fins in the first region of the substrate, a second...
2016/0133725 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR, AND DISPLAY APPARATUS INCLUDING THE SAME
A method of manufacturing a thin-film transistor (TFT) having uniform performance in terms of threshold voltage and the like, the TFT, and a display apparatus...
2016/0133724 PATTERNING OF VERTICAL NANOWIRE TRANSISTOR CHANNEL AND GATE WITH DIRECTED SELF ASSEMBLY
Directed self-assembly (DSA) material, or di-block co-polymer, to pattern features that ultimately define a channel region a gate electrode of a vertical...
2016/0133723 Tunneling Field Effect Transistor (TFET) With Ultra Shallow Pockets Formed By Asymmetric Ion Implantation and...
An embodiment integrated circuit device and a method of making the same. The embodiment integrated circuit includes a substrate supporting a source with a...
2016/0133722 THRESHOLD VOLTAGE ADJUSTMENT IN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SILICON OXYNITRIDE...
A fully depleted silicon-on-insulator MOSFET transistor with reduced variation in threshold voltage. The substrate of the transistor is doped to form a ground...
2016/0133721 SELECTIVELY FORMING A PROTECTIVE CONDUCTIVE CAP ON A METAL GATE ELECTRODE
A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric...
2016/0133720 METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON FINFET DEVICES AND THE RESULTING DEVICES
One illustrative method disclosed herein includes, among other things, forming at least one layer of insulating material with a substantially planar upper...
2016/0133719 METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON FINFET DEVICES AND THE RESULTING DEVICES
One illustrative method disclosed herein includes, among other things, forming a fin having an upper surface and a plurality of side surfaces, forming a...
2016/0133718 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is a semiconductor device. Two stack layers are disposed on a substrate of a first conductivity type. Each of stack layers includes a dielectric layer...
2016/0133717 Transistors, Memory Cells and Semiconductor Constructions
Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within...
2016/0133716 ALTERNATIVE GATE DIELECTRIC FILMS FOR SILICON GERMANIUM AND GERMANIUM CHANNEL MATERIALS
Embodiments of the present invention provide a high-K dielectric film for use with silicon germanium (SiGe) or germanium channel materials, and methods of...
2016/0133715 SEMICONDUCTOR DEVICE
The reliability of a field effect transistor made of a nitride semiconductor material is improved. An ohmic electrode includes a plurality of unit electrodes...
2016/0133714 Metal-Oxide-Semiconductor Field-Effect Transistor with Metal-Insulator-Semiconductor Contact Structure to...
A method includes depositing a first metal layer on a native SiO.sub.2 layer that is disposed on at least one of a source and a drain of a ...
2016/0133713 Floating Gate NVM With Low-Moisture-Content Oxide Cap Layer
A back-end metallization structure for non-volatile memory (NVM) and other semiconductor devices including low-moisture-content oxide cap layers that suppress...
2016/0133712 Semiconductor Device and Method of Manufacturing the Same
A semiconductor device of the present invention includes a bonding target and an electrode terminal bonded to the bonding target. The electrode terminal and...
2016/0133711 METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY...
A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the...
2016/0133710 REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second...
2016/0133709 MONOLITHIC INTEGRATED SEMICONDUCTOR STRUCTURE
A monolithic integrated semiconductor structure includes: A) an Si carrier layer, B) a layer having the composition B.sub.xAl.sub.yGa.sub.zN.sub.tP.sub.v,...
2016/0133708 STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON
A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide...
2016/0133707 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A method includes steps of: preparing a silicon carbide substrate having a first surface and including a first impurity region having a first conductivity...
2016/0133706 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, AS WELL AS POWER CONVERSION DEVICE
Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the...
2016/0133705 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Included are the steps of: preparing a silicon carbide substrate having an epitaxial layer formed thereon; forming an upper-layer film on the epitaxial layer;...
2016/0133704 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first...
2016/0133703 FinFETs Having Dielectric Punch-Through Stoppers
A semiconductor structure includes a semiconductor substrate; a planar transistor on a first portion of the semiconductor substrate, wherein the first portion...
2016/0133702 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a substrate having a first conductive type active region, a second conductive type drift region in the active region, a gate...
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