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| Patent # | Description |
|---|---|
| 2016/0133701 |
TRANSISTOR A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have... |
| 2016/0133700 |
NANOWIRE AND PLANAR TRANSISTORS CO-INTEGRATED ON UTBOX SOI SUBSTRATE Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the... |
| 2016/0133699 |
Reduced Scale Resonant Tunneling Field Effect Transistor An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major... |
| 2016/0133698 |
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the... |
| 2016/0133697 |
STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION
CAPACITANCE AND LOW LEAKAGE A method of forming a semiconductor device that includes forming a gate structure on a fin structure and etching the source and drain region portions of the... |
| 2016/0133696 |
FIN-FET STRUCTURE AND METHOD OF MANUFACTURING SAME A method for fabricating a FinFET DEVICE is provided in the invention, comprising: a. providing a substrate (100);b. forming a fin (200) on the substrate... |
| 2016/0133695 |
A METHOD OF INHIBITING LEAKAGE CURRENT OF TUNNELING TRANSISTOR, AND THE
CORRESPONDING DEVICE AND A PREPARATION... Provided are a method for suppressing a leakage current of a tunnel field-effect transistor (TFET), a corresponding device, and a manufacturing method, related... |
| 2016/0133694 |
Structures and Methods with Reduced Sensitivity to Surface Charge The present application provides (in addition to more broadly applicable inventions) improvements which are particularly applicable to two-sided power... |
| 2016/0133693 |
SEMICONDUCTOR DEVICE HAVING A METAL GATE A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode... |
| 2016/0133692 |
UNIAXIALLY-STRAINED FD-SOI FINFET Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A... |
| 2016/0133691 |
DRAM MIMCAP Stack with MoO2 Electrode Steps are taken to ensure that the bulk dielectric layer exhibits a crystalline phase before the deposition of a second electrode layer. The crystalline phase... |
| 2016/0133690 |
Methods and Apparatus for High Voltage Integrated Circuit Capacitors High voltage integrated circuit capacitors are disclosed. In an example arrangement, A capacitor structure includes a semiconductor substrate; a bottom plate... |
| 2016/0133689 |
RELIABILITY IMPROVEMENT OF POLYMER-BASED CAPACITORS BY MOISTURE BARRIER It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to... |
| 2016/0133688 |
SEMICONDUCTOR DEVICES Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive... |
| 2016/0133687 |
Metal-Insulator-Metal Capacitor Structure and Method for Manufacturing the
Same A metal-insulator-metal (MIM) capacitor structure and a method for manufacturing the same. The method includes a step hereinafter. A 5-layered dual-dielectric... |
| 2016/0133686 |
VERTICAL METAL INSULATOR METAL CAPACITOR A semiconductor device and a method are disclosed herein. The semiconductor device includes a device die, a molding layer surrounding the device die, a... |
| 2016/0133685 |
Light Emitting Device and Method of Manufacturing the Same There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal... |
| 2016/0133684 |
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME A display device and method of manufacturing the same are disclosed. In one aspect, the display device includes a first line extending in a first direction, a... |
| 2016/0133683 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base... |
| 2016/0133682 |
ORGANIC LIGHT-EMITTING DIODE DISPLAY HAVING HIGH APERTURE RATIO AND METHOD
FOR MANUFACTURING THE SAME An organic light-emitting diode display includes a substrate in which an emission area and a non-emission area are defined; a thin film transistor disposed in... |
| 2016/0133681 |
ORGANIC LIGHT-EMITTING DIODE DISPLAY HAVING MULTI-MODE CAVITY STRUCTURE An organic light-emitting diode (OLED) display can include a substrate configured to have an emission area and a non-emission area defined in the substrate; a... |
| 2016/0133680 |
ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME An organic light emitting display and a method of manufacturing the same. The organic light-emitting display is a transparent display where one can see through... |
| 2016/0133679 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DIODE DISPLAY
INCLUDING THE SAME, AND... A TFT array substrate, OLED display including the same, and a manufacturing method of the OLED display are disclosed. In one aspect, the TFT array substrate... |
| 2016/0133678 |
ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME Provided is an OLED display that includes, for example, a substrate having a plurality of pixel regions defined in a matrix; a thin film transistor in each... |
| 2016/0133677 |
ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC DISPLAY DEVICE EACH INCLUDING
LIGHT EMITTERS IN A TWO-DIMENSIONAL... An organic light-emitting device including a substrate, light emitters in a two-dimensional arrangement along a surface of the substrate, and banks that define... |
| 2016/0133676 |
ORGANIC LIGHT-EMITTING DISPLAY PANEL AND METHOD OF FABRICATING THE SAME An organic light-emitting display panel and a method of fabricating the same, the panel including a base substrate; a first electrode layer including a... |
| 2016/0133675 |
DISPLAY DEVICE A display device includes: a substrate; a first light emitting layer extending in a first direction along a column or a row of a plurality of sub-pixels... |
| 2016/0133674 |
ORGANIC LIGHT EMITTING DIODE DISPLAY An organic light emitting diode display includes: a substrate; and a plurality of red organic light emitting diodes, green organic light emitting diodes, and... |
| 2016/0133673 |
COLOR FILTER ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF AND ORGANIC
LIGHT EMITTING DIODE DISPLAY DEVICE... An OLED display device according to an embodiment includes a substrate; a black matrix, in which openings are formed, disposed on the substrate; a color filter... |
| 2016/0133672 |
Hybrid Perovskite with Adjustable Bandgap A method is provided for preparing a thin film of perovskite material having an adjustable bandgap. The method forms a thin film of material having the formula... |
| 2016/0133671 |
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled... |
| 2016/0133670 |
SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise a STT stack including: a... |
| 2016/0133669 |
INTEGRATED CIRCUIT STRUCTURES WITH SPIN TORQUE TRANSFER MAGNETIC RANDOM
ACCESS MEMORY HAVING INCREASED MEMORY... STT-MRAM integrated circuit and method for fabricating the same are disclosed. An integrated circuit includes a word line layer, a bit line layer, and an MRAM... |
| 2016/0133668 |
INTEGRATED DEVICE FOR TEMPORAL BINNING OF RECEIVED PHOTONS An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality... |
| 2016/0133667 |
SOLID STATE IMAGE PICKUP APPARATUS AND METHOD FOR MANUFACTURING THE SAME When forming a hollow portion between each color filter, in order to realize the formation of the hollow portions with a narrower width, a plurality of light... |
| 2016/0133666 |
Back-End Processing Using Low-Moisture Content Oxide Cap Layer A method for fabricating image sensors and other semiconductor ICs that controls the amount of hydrogen generated during back-end processing. The back-end... |
| 2016/0133665 |
SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS,
METHOD OF DESIGNING SEMICONDUCTOR... A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending... |
| 2016/0133664 |
SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS A solid-state imaging device includes a first substrate and a second substrate electrically connected to the first substrate. The first substrate includes a... |
| 2016/0133663 |
SOLID-STATE IMAGE SENSOR AND CAMERA An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each... |
| 2016/0133662 |
IMAGE SENSOR DEVICE WITH DIFFERENT WIDTH CELL LAYERS AND RELATED METHODS An image sensor device may include an interconnect layer, an image sensor IC on the interconnect layer, and a barrel adjacent the interconnect layer and having... |
| 2016/0133661 |
IMAGE SENSOR An image sensor includes: a lens configured to focus light after passing through or reflected by an object to be read and passing through a first transparent... |
| 2016/0133660 |
IMAGING DEVICE AND ELECTRONIC DEVICE To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first... |
| 2016/0133659 |
DEPTH SENSING PIXEL, COMPOSITE PIXEL IMAGE SENSOR AND METHOD OF MAKING THE
COMPOSITE PIXEL IMAGE SENSOR A depth sensing pixel includes a photodiode; a first photo storage device; and a first transistor configured to selectively couple the photodiode to the first... |
| 2016/0133658 |
SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a... |
| 2016/0133657 |
THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME An exemplary embodiment provides a thin film transistor array panel including: a substrate; a gate line; a semiconductor layer; a data wire layer; a first... |
| 2016/0133656 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs),... |
| 2016/0133655 |
ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING
ELECTRO-OPTICAL DEVICE An electro-optical device includes an element substrate main body, a first capacitance electrode that is arranged above the element substrate main body, and... |
| 2016/0133654 |
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of... |
| 2016/0133653 |
NARROW BEZEL FLAT PANEL DISPLAY Provided is a flat panel display. A flat panel display includes: a lower panel defining a display area and a non-display area, a driver element and a line... |
| 2016/0133652 |
ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL An array substrate and a liquid crystal display panel including the array substrate are provided. The array substrate includes: multiple pixel units; at least... |
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