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A light-emitting device comprises a light-emitting stack comprising a first surface and a second surface opposite to the first surface; a first electrode...
A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an...
ELECTRODE STRUCTURE OF LIGHT EMITTING DEVICE
An electrode structure of a light emitting device includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes...
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the...
LIGHT-EMITTING DIODE DEVICE
A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the...
LATTICE-MATCHED LIGHT EMITTING ELEMENT
A light emitting element and its manufacturing method are disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium...
LIGHTING EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
The present invention discloses a light emitting device, a manufacturing method thereof and a display device. The light emitting device comprises a substrate....
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR
COMPONENT COMPRISING SUCH A SEMICONDUCTOR...
A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing...
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected
Portions of Same
A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the...
LIGHT EMITTING DIODE WITH DOPED QUANTUM WELLS AND ASSOCIATED MANUFACTURING
A light emitting diode based on GaN including an active zone located between an n-doped layer and a p-doped layer that together form a p-n junction, wherein...
MONOLITHIC NANO-CAVITY LIGHT SOURCE ON LATTICE MISMATCHED SEMICONDUCTOR
An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice...
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
A method for producing a nitride semiconductor device. The method comprises providing a substrate made of a material other than a nitride semiconductor. The...
METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
A method for manufacturing a light emitting device is provided. Step (a): A semiconductor wafer having a substrate and at least one epitaxial structure is...
METHOD AND DEVICE FOR PRODUCING A PHOTOVOLTAIC ELEMENT WITH STABILISED
According to an example, in a method for producing a photovoltaic element with stabilised efficiency, a silicon substrate may be provided with an emitter layer...
METHOD AND APPARATUS FORMING COPPER (Cu) OR ANTIMONY (Sb) DOPED ZINC
TELLURIDE AND CADMIUM ZINC TELLURIDE...
A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated...
RESTORATION METHOD OF SILICON-BASED PHOTOVOLTAIC SOLAR CELLS
The treatment method of a photovoltaic element comprises at least the following steps: providing a silicon-based substrate (1) provided with at least one...
USE OF SILICON NITRIDE AS A SUBSTRATE AND A COATING MATERIAL FOR THE RAPID
SOLIDIFICATION OF SILICON
Silicon nitride particles are used as a coating or substrate material for kerfless wafer making technologies.
CONTROL OF COMPOSITION PROFILES IN ANNEALED CIGS ABSORBERS
Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures,...
OPTICAL SENSOR MODULE
An optical sensor module is disclosed. The optical sensor module can include a housing comprising an air cavity. An optical emitter die can be disposed in the...
LIGHT DETECTION DEVICE
A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate,...
SUBSTRATE FOR SOLAR CELL, AND SOLAR CELL
Provided is a substrate for a solar cell, wherein a flat chamfered portion is formed on one corner of a silicon substrate having a square shape in a planar...
PHOTOVOLTAIC SYSTEM, MODULE HOLDER SYSTEM AND REFLECTOR
A photovoltaic system has at least two bifacial solar modules, which are respectively held in a module holder, and a reflector. The module holders are...
POLYOLEFIN ADHESIVE MATERIAL FOR USE IN SOLAR MODULES
This disclosure generally relates to films capable of use in electronic device modules and to electronic device modules including such films. The disclosure...
SOLAR CELL ASSEMBLY
A solar cell assembly (200) is presented. The solar cell assembly includes one or more solar cell units (211) coupled in series. The solar cell unit includes a...
Hybrid Vapor Phase-Solution Phase Growth Techniques for Improved CZT(S,Se)
Photovoltaic Device Performance
A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate...
COMPOSITION FOR SOLAR CELL ELECTRODE AND ELECTRODE PREPARED USING THE SAME
A composition for solar cell electrodes, the composition including silver (Ag) powder; a glass frit; an organic binder; and a solvent, the organic binder...
SOLAR CELL MODULE AND METHOD FOR PRODUCING SOLAR CELL MODULE
A solar cell module with an anti-glare property, capable of exhibiting a high antifouling property. A surface of a plate body made of glass in the module is...
INTEGRATED SOLAR COLLECTORS USING EPITAXIAL LIFT OFF AND COLD WELD BONDED
SEMICONDUCTOR SOLAR CELLS
There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial...
AVALANCHE PHOTODIODE RECEIVER
A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric...
ELECTROSTATIC DISCHARGE DEVICE AND METHOD OF FABRICATING THE SAME
Provided are an electrostatic discharge (ESD) device and method of fabricating the same where the ESD device is configured to prevent electrostatic discharge...
PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING AN EMPTY
TRENCH STRUCTURE AND SEMICONDUCTOR DEVICE...
The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above...
Multi-Channel Field Effect Transistors Using 2D-Material
A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an...
THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE THIN FILM
A thin film transistor (TFT) substrate includes a substrate and a TFT. The TFT is disposed on the substrate and comprises a gate, a gate dielectric layer, a...
THIN FILM TRANSISTOR ASSEMBLY, ARRAY SUBSTRATE METHOD OF MANUFACTURING THE
SAME, AND DISPLAY DEVICE
The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the...
THIN FILM TRANSISTOR, ARRAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY
A thin film transistor, an array substrate, a manufacturing method and a display device are provided. The thin film transistor includes a substrate and a gate...
Contacts For Highly Scaled Transistors
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D)...
A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed...
GATE-ALL-AROUND FIN DEVICE
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a...
HIGH-VOLTAGE FINFET DEVICE HAVING LDMOS STRUCTURE AND METHOD FOR
MANUFACTURING THE SAME
A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one...
THREE DIMENSIONAL NAND DEVICE HAVING REDUCED WAFER BOWING AND METHOD OF
A monolithic three dimensional NAND string includes a plurality of control gate electrodes extending substantially parallel to a major surface of a substrate,...
Embedded JFETs for High Voltage Applications
A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of...
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction...
SEMICONDUCTOR DEVICES AND FABRICATION METHODS
Methods of fabricating vertical devices are described, along with apparatuses and systems that include them. In one such method, a vertical device is formed at...
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed...
METHOD AND APPARATUS FOR POWER DEVICE WITH DEPLETION STRUCTURE
A semiconductor device is provided. The semiconductor device includes a substrate of a first conductivity type and an epitaxial structure of the first...
Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice...
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
A silicon carbide semiconductor device and method of manufacture thereof is made by providing a channel control zone which has impurity concentration...
HIGH FREQUENCY SWITCHING MOSFETS WITH LOW OUTPUT CAPACITANCE USING A
Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The...
SEMICONDUCTOR COMPONENT WITH DYNAMIC BEHAVIOR
One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor...
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device provided herein includes a trench in which a gate insulating layer (GIL) and a gate electrode are located. A step is provided in a...