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Patent # Description
2016/0149062 STACKED AND INTEGRATED ELECTRIC POWER GENERATING DEVICE CAPTURING MULTIPLE LIGHT SOURCES FOR POWER GENERATION
A stacked and integrated electric power generating device for capturing multiple light sources for power generation has a first concentrating photovoltaic...
2016/0149061 METAL CHALCOGENIDE NANOPARTICLES FOR MANUFACTURING SOLAR CELL LIGHT ABSORPTION LAYERS AND METHOD OF...
Disclosed are metal chalcogenide nanoparticles forming light absorption lavers of solar cells including two or more phases selected from a first phase...
2016/0149060 Light Receiving Device
A photovoltaic device having an active region comprising a III-V material including Bismuth and one or more other group V elements, the band gap energy of the...
2016/0149059 AGGLOMERATED PRECURSOR FOR MANUFACTURING LIGHT ABSORPTION LAYER OF SOLAR CELLS AND METHOD OF MANUFACTURING THE SAME
Disclosed are an aggregated precursor for manufacturing a light absorption layer of solar cells comprising a first phase comprising a copper (Cu)-containing...
2016/0149058 USE OF DARK MIRROR COATING TO SUPPRESS STRAY LIGHT IN AN OPTICAL SENSOR ASSEMBLY
An optical sensor assembly is provided in which a dark mirror coating is used to suppress stray light in the form of both unwanted reflections from...
2016/0149057 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity...
2016/0149056 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
A semiconductor device manufacturing method according to an embodiment includes: forming an n-type SiC layer on a SiC substrate; forming a p-type impurity...
2016/0149055 SEMICONDUCTOR DEVICE AND MEMORY DEVICE
The present invention provides a transistor having a high on-state current. The transistor includes a plurality of fins, a first oxide semiconductor, a gate...
2016/0149054 VERTICAL FIELD EFFECT TRANSISTORS WITH CONTROLLED OVERLAP BETWEEN GATE ELECTRODE AND SOURCE/DRAIN CONTACTS
An approach to forming a semiconductor structure for a vertical field effect transistor with a controlled gate overlap. The approach includes forming on a...
2016/0149053 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE...
A thin-film transistor, including a substrate; an active layer on the substrate; a gate electrode on the active layer; and a gate insulating layer between the...
2016/0149052 THIN FILM TRANSISTOR, ORGANIC LIGHT-EMITTING DIODE DISPLAY INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
A TFT, OLED display including the same, and manufacturing method thereof are disclosed. In one aspect, the TFT includes a first gate electrode formed over a...
2016/0149051 TRANSISTORS INCORPORATING SMALL METAL ELEMENTS INTO DOPED SOURCE AND DRAIN REGIONS
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the...
2016/0149050 REDUCING DIRECT SOURCE-TO-DRAIN TUNNELING IN FIELD EFFECT TRANSISTORS WITH LOW EFFECTIVE MASS CHANNELS
An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes...
2016/0149049 RUTHENIUM NUCLEATION LAYER FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator...
2016/0149048 OXIDE SEMICONDUCTOR FILM AND FORMATION METHOD THEREOF
To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In--Ga--Zn oxide, thereby separating a...
2016/0149047 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME FIELD
According to one embodiment, a thin-film transistor and a method of manufacturing the same achieve size reduction of the thin-film transistor while using an...
2016/0149046 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by...
2016/0149045 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductor, a second conductor, a first insulator, a second insulator, a third insulator, a semiconductor, and an...
2016/0149044 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
To provide a highly reliable semiconductor device that is suitable for miniaturization and higher density. A semiconductor device includes a first electrode...
2016/0149043 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A thin film transistor substrate includes a gate metal pattern comprising a gate line extending in a first direction and a gate electrode electrically...
2016/0149042 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT AND ELECTRONIC APPARATUS
Provided is a semiconductor device, including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode are stacked in...
2016/0149041 Semiconductor Devices and FinFETS
Semiconductor devices and fin field effect transistors (FinFETs) are disclosed. In some embodiments, a representative semiconductor device includes a group III...
2016/0149040 FINFET AND METHOD OF MANUFACTURING THE SAME
A FinFET includes a fin structure, a gate and a source-drain region. The fin structure is over a substrate and has a recess of an upper surface of the fin...
2016/0149039 METHOD FOR STRESS CONTROL IN A CHANNEL REGION OF A TRANSISTOR
Method of straining a transistor channel zone comprising the following steps: a) formation of stress blocks (30b, 30c) arranged so as to induce a given...
2016/0149038 FACET-FREE STRAINED SILICON TRANSISTOR
The presence of a facet or a void in an epitaxially grown crystal indicates that crystal growth has been interrupted by defects or by certain material...
2016/0149037 METHOD TO INTRODUCE STRESS IN A CHANNEL OF A TRANSISTOR USING SACRIFICIAL SOURCES AND DRAIN REGION AND GATE...
Method of making at least one transistor strained channel semiconducting structure, comprising steps to form a sacrificial gate block and insulating spacers...
2016/0149036 SOURCE/DRAIN STRUCTURE AND MANUFACTURING THE SAME
A method for lithography exposing process is provided. The method includes performing a first lithography exposing process to a resist layer using a mask...
2016/0149035 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a...
2016/0149034 POWER SEMICONDUCTOR DEVICE HAVING LOW ON-STATE RESISTANCE
A power semiconductor device having low on-state resistance includes a substrate having an epitaxial layer formed thereon, a gate structure, a termination...
2016/0149033 INCREASING BREAKDOWN VOLTAGE OF LDMOS DEVICES FOR FOUNDRY PROCESSES
A laterally defused MOS (LDMOS) device with improved breakdown voltage includes a substrate including a deep well, a drain region formed in the deep well and...
2016/0149032 Power Transistor with Field-Electrode
A semiconductor device includes at least two transistor cells. Each of these at least two transistor cells includes: a drain region, a drift region, and a body...
2016/0149031 SEMICONDUCTOR DEVICES INCLUDING PATTERNS IN A SOURCE REGION
Semiconductor devices are provided. A semiconductor device includes a substrate including a well region. The semiconductor device includes a source region in...
2016/0149030 SEMICONDUCTOR DEVICE USING THREE DIMENSIONAL CHANNEL
According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin...
2016/0149029 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate including a trench, a gate insulating layer, and a gate electrode. A step is arranged in a side...
2016/0149028 SEMICONDUCTOR DEVICE WITH CHARGE COMPENSATION REGION UNDERNEATH GATE TRENCH
A semiconductor substrate has a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and...
2016/0149027 ASYMMETRICAL FINFET STRUCTURE AND METHOD OF MANUFACTURING SAME
A method of fabricating an asymmetric FinFET is provided in the invention, comprising: a. providing a substrate (101); b. forming a fin (102) on the substrate...
2016/0149026 VERTICAL DMOS TRANSISTOR
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially...
2016/0149025 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor...
2016/0149024 HIGH-ELECTRON MOBILITY TRANSISTOR AND PROCESS TO FORM THE SAME
An electron device formed by primarily nitrides semiconductor materials and a method to form the electron device are disclosed. The electron device includes,...
2016/0149023 SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND REPLACEMENT METAL GATE STRUCTURE AND RELATED METHODS
A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (STI) regions in the...
2016/0149022 HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET) VARIABLE GAIN AMPLIFIER HAVING VARIABLE TRANSCONDUCTANCE
A heterojunction semiconductor field effect transistor HFET having a pair of layers of different semiconductor materials forming a quantum well within the...
2016/0149021 VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer...
2016/0149020 REDUCING DIRECT SOURCE-TO-DRAIN TUNNELING IN FIELD EFFECT TRANSISTORS WITH LOW EFFECTIVE MASS CHANNELS
An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes...
2016/0149019 Semiconductor Device and Method
Vertical gate all around devices are formed by initially forming a first doped region and a second doped region that are planar with each other. A channel...
2016/0149018 LATERALLY-GRADED DOPING OF MATERIALS
A method includes defining, on a surface of a material, a plurality of discrete portions of a surface as surface elements having at least one of a...
2016/0149017 Gate Spacers and Methods of Forming
Methods and structures for forming devices, such as transistors, are discussed. A method embodiment includes forming a gate spacer along a sidewall of a gate...
2016/0149016 REPLACEMENT METAL GATE DIELECTRIC CAP
A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method...
2016/0149015 RECESSING RMG METAL GATE STACK FOR FORMING SELF-ALIGNED CONTACT
Embodiments of the present invention may include methods of incorporating an embedded etch barrier layer into the replacement metal gate layer of field effect...
2016/0149014 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a...
2016/0149013 ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes...
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