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Patent # Description
2016/0149012 VERY HIGH ASPECT RATIO CONTACT
A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the...
2016/0149011 POLY SANDWICH FOR DEEP TRENCH FILL
A semiconductor device is formed by forming a deep trench in a substrate and a dielectric liner on sidewalls of the deep trench. A first undoped polysilicon...
2016/0149010 VERTICAL CELL-TYPE SEMICONDUCTOR DEVICE HAVING PROTECTIVE PATTERN
According to example embodiments of inventive concepts, a semiconductor device includes: a substrate, and a stacked structure including interlayer insulating...
2016/0149009 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device according to an embodiment includes a semiconductor substrate, and a gate dielectric film is provided on the semiconductor substrate. A...
2016/0149008 MEMORY DEVICE HAVING BURIED GATE AND METHOD OF FABRICATING THE SAME
A memory device includes a substrate including active areas and isolation areas, trenches in the isolation areas, active patterns in the active areas, the...
2016/0149007 METHODOLOGY AND STRUCTURE FOR FIELD PLATE DESIGN
The present disclosure relates to a high voltage transistor device having a field plate, and a method of formation. In some embodiments, the high voltage...
2016/0149006 SEMICONDUCTOR STRUCTURES HAVING A GATE FIELD PLATE AND METHODS FOR FORMING SUCH STRUCTURE
A field effect transistor structure having a semiconductor having a source region, a drain region, and a gate contact region disposed between the source region...
2016/0149005 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME
A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the...
2016/0149004 3D NAND With Oxide Semiconductor Channel
Disclosed herein are 3D NAND memory devices having an oxide semiconductor vertical NAND channel and methods for forming the same. The oxide semiconductor may...
2016/0149003 Methods of Manufacturing Semiconductor Devices
In methods of manufacturing a semiconductor device, a stress channel layer is formed on a semiconductor substrate. A first ion-implantation process is...
2016/0149002 MEMORY DEVICE CONTAINING STRESS-TUNABLE CONTROL GATE ELECTRODES
A memory film and a semiconductor channel are formed within each memory opening that extends through a stack including an alternating plurality of insulator...
2016/0149001 GRADED HETEROJUNCTION NANOWIRE DEVICE
A device includes a source region, a drain region, and a semiconductor channel connecting the source region to the drain region. The semiconductor channel...
2016/0149000 SEMICONDUCTOR WAFER AND METHOD OF PRODUCING SEMICONDUCTOR WAFER
A semiconductor wafer includes first and second superlattice layers. The first superlattice layer includes first unit layers each of which includes first and...
2016/0148999 CAPACITANCE REDUCTION FOR ADVANCED TECHNOLOGY NODES
After forming source/drain contact trenches to expose source/drain regions, contact liner material layer portions are formed on sidewalls and bottom surfaces...
2016/0148998 FINFET STRUCTURE
A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate...
2016/0148997 SEMICONDUCTOR DEVICE HAVING LOCALIZED CHARGE BALANCE STRUCTURE AND METHOD
In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then...
2016/0148996 DIODE AND SIGNAL OUTPUT CIRCUIT INCLUDING THE SAME
A diode includes: a p-type semiconductor substrate; an n-type semiconductor layer; a p-type isolation region formed to surround a predetermined region of the...
2016/0148995 SEMICONDUCTOR DEVICE
A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit...
2016/0148994 SEMICONDUCTOR STRUCTURE HAVING FIELD PLATES OVER RESURF REGIONS IN SEMICONDUCTOR SUBSTRATE
A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a first doping region, a first well and a second doping region...
2016/0148993 REDUCING DIRECT SOURCE-TO-DRAIN TUNNELING IN FIELD EFFECT TRANSISTORS WITH LOW EFFECTIVE MASS CHANNELS
An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes...
2016/0148992 SEMICONDUCTOR DEVICE
A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well...
2016/0148991 PRECISION INTRALEVEL METAL CAPACITOR FABRICATION
A method for fabricating, within an integrated circuit (IC), a capacitor that includes a first plate formed within a recess of a metal layer that includes a...
2016/0148990 PROCESS-COMPATIBLE DECOUPLING CAPACITOR AND METHOD FOR MAKING THE SAME
Provided is a method of forming a decoupling capacitor device and the device thereof. The decoupling capacitor device includes a first dielectric layer portion...
2016/0148989 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE
An organic light emitting diode display device includes a semiconductor on a substrate with a driving channel, an auxiliary storage electrode on the substrate...
2016/0148988 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting device includes: a first transistor including a source electrode connected to a data line and a gate electrode connected to a scan...
2016/0148987 OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
Various embodiments may relate to an optoelectronic component, including an optoelectronic structure, which is designed to provide a first electromagnetic...
2016/0148986 TRANSISTOR, ORGANIC LIGHT EMITTING DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING...
A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the...
2016/0148985 ORGANIC LIGHT EMITTING DIODE DISPLAY
Disclosed herein is an organic light emitting diode display, including a substrate, a first thin film transistor including a first active pattern on the...
2016/0148984 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display includes a flexible substrate, a driving layer positioned on the flexible substrate and including a thin film...
2016/0148983 ORGANIC LIGHT-EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
An OLED display and a method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate and a semiconductor layer formed...
2016/0148982 ORGANIC LIGHT-EMITTING DIODE ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
Embodiments of the invention disclose an organic light-emitting diode array substrate and a manufacturing method thereof, and a display device. The array...
2016/0148981 DISPLAY DEVICE, ELECTRO-OPTICAL DEVICE, ELECTRIC EQUIPMENT, METAL MASK, AND PIXEL ARRAY
A display device includes a plurality of pixels, each of the pixels including sub-pixels of a first color, a second color and a third color, the sub-pixels of...
2016/0148980 ORGANIC X-RAY DETECTORS AND RELATED SYSTEMS
Organic x-ray detectors and organic x-ray systems employing the detectors are presented. An Organic x-ray detector has a layered structure that includes a thin...
2016/0148979 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
An electronic device is provided. An electronic device according to an example of the disclosed technology includes a semiconductor memory, the semiconductor...
2016/0148978 RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND METHOD FOR OPERATING RESISTIVE RANDOM ACCESS MEMORY
A resistive random access memory (RRAM) structure including a first transistor, a second transistor and a RRAM cell string is provided. The first transistor...
2016/0148977 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a first electrode on a substrate, a selection device pattern, a variable resistance layer pattern, a first protective layer...
2016/0148976 Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory Application
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low...
2016/0148975 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the...
2016/0148974 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an interlayer dielectric layer formed over a substrate...
2016/0148973 LIGHT-EMITTING ELEMENT HAVING AN OPTICAL FUNCTION FILM INCLUDING A REFLECTION LAYER
A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a...
2016/0148972 WAFER-LEVEL PACKAGING METHOD OF BSI IMAGE SENSORS HAVING DIFFERENT CUTTING PROCESSES
A wafer-level packaging method of BSI image sensors includes the following steps: S1: providing a wafer package body comprising a silicon base, an interconnect...
2016/0148971 METHOD FOR TRANSFERRING A LAYER OF CIRCUITS
A process for transferring a buried circuit layer comprises taking a donor substrate comprising an internal etch stop zone and covered on its front side with a...
2016/0148970 IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF
Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a...
2016/0148969 IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF
Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a...
2016/0148968 SOLID-STATE IMAGE CAPTURING DEVICE AND MANUFACTURING METHOD FOR THE SAME
A solid-state image capturing device according to the present invention includes: a first-conductivity-type well; a first second-conductivity-type diffusion...
2016/0148967 Bonding Pad on a Back Side Illuminated Image Sensor
A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting...
2016/0148966 Space-Efficient PCB-Mountable Image Sensor, And Method For Fabricating Same
A space-efficient PCB-mountable image sensor includes a semiconductor substrate having a top surface and a side surface, a bond pad on the top surface, and a...
2016/0148965 Detector assembly using vertical wire bonds and compression decals
An imaging sensor includes a first monolithic semiconductor plate having an upper surface and a lower surface; a substantially continuous cathode deposited on...
2016/0148964 METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE...
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher...
2016/0148963 MULTI-LAYER EXTRAORDINARY OPTICAL TRANSMISSION FILTER SYSTEMS, DEVICES, AND METHODS
Systems, devices, and methods for an extraordinary optical transmission (EOT) image capture system comprising optical components to capture light corresponding...
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