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Patent # Description
2016/0148962 THREE LEVEL TRANSFER GATE
A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response...
2016/0148961 ACTIVE PIXEL SENSOR HAVING A RAISED SOURCE/DRAIN
In some embodiments, the present disclosure relates to an integrated circuit having a device. The device has a first raised source/drain area arranged over a...
2016/0148960 SOLID-STATE IMAGING DEVICE
According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric...
2016/0148959 Monolithic Integration Techniques for Fabricating Photodetectors with Transistors on Same Substrate
Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a...
2016/0148958 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a...
2016/0148957 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A liquid crystal display device is disclosed. The liquid crystal display device includes a first substrate, a second substrate opposite of the first substrate,...
2016/0148956 TFT SUBSTRATES AND THE MANUFACTURING METHOD THEREOF
A TFT substrate and the manufacturing method thereof are disclosed. The method includes: providing a substrate; forming a gate electrode on the substrate;...
2016/0148955 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor array panel according to an exemplary embodiment of the present invention has a first gate insulting layer and a second gate insulating...
2016/0148954 MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present invention provides an array substrate and a manufacturing method thereof and a display device. The manufacturing method comprises: forming a...
2016/0148953 ARRAY SUBSTRATE, RADIATION DETECTOR, AND WIRING SUBSTRATE
According to the embodiment, an array substrate includes a substrate, a plurality of first wirings, a plurality of second wirings, a thin film transistor, a...
2016/0148952 ARRAY SUBSTRATE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE
The present disclosure relates to the field of display technology, and provides an array substrate, its manufacturing method and a display device. A signal...
2016/0148951 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY SCREEN
Embodiments of the present invention disclose an array substrate and a method of manufacturing the same, and a liquid crystal display screen. The array...
2016/0148950 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD, AND DISPLAY DEVICE
A thin-film transistor array substrate includes a substrate and a plurality of thin-film transistors and a plurality of open areas formed on the substrate in a...
2016/0148949 SEMICONDUCTOR STRUCTURES INCLUDING DIELECTRIC MATERIALS HAVING DIFFERING REMOVAL RATES
Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control...
2016/0148948 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a core insulating film, a channel film...
2016/0148947 MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
A memory device includes a stack including gate electrodes vertically stacked on a substrate and having a vertical hole, an active pillar disposed in the...
2016/0148946 SET OF STEPPED SURFACES FORMATION FOR A MULTILEVEL INTERCONNECT STRUCTURE
A trench can be formed through a stack of alternating plurality of first material layers and second material layers. A dielectric material liner and a trench...
2016/0148945 METAL WORD LINES FOR THREE DIMENSIONAL MEMORY DEVICES
A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of insulating first material and sacrificial...
2016/0148944 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor device may include forming split gate structures including a floating gate electrode layer and a control gate...
2016/0148943 METHODS AND APPARATUSES WITH VERTICAL STRINGS OF MEMORY CELLS AND SUPPORT CIRCUITRY
Apparatuses and methods have been disclosed. One such apparatus includes strings of memory cells formed on a topside of a substrate. Support circuitry is...
2016/0148942 FLASH MEMORY UNIT AND MEMORY ARRAY, AND PROGRAMMING, ERASING AND READING METHOD THEREOF
A flash memory unit, a memory array and operation methods thereof are provided. The flash memory unit includes a semiconductor substrate, a first and a second...
2016/0148941 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device may include semiconductor patterns. The semiconductor device may include insulating layers including first regions surrounding the...
2016/0148940 Cross-Coupled Thyristor SRAM Semiconductor Structures and Methods of Fabrication
A memory cell based upon thyristors for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented...
2016/0148939 STATIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
A static random access memory and the manufacturing method thereof are provided. By forming the specific gate structure(s) to be concave gate structure(s) and...
2016/0148938 SEMICONDUCTOR DEVICE HAVING A GATE AND A CONDUCTIVE LINE IN A PILLAR PATTERN
A semiconductor device including a vertical gate and a method for manufacturing the same are disclosed, which prevent a floating body phenomenon, thereby...
2016/0148937 SEMICONDUCTOR DEVICE
A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a...
2016/0148936 CONTACT WRAP AROUND STRUCTURE
A semiconductor device includes a gate stack. The semiconductor device also includes a wrap-around contact arranged around and contacting substantially all...
2016/0148935 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH CONTROLLED END-TO-END CRITICAL DIMENSION AND METHOD FOR...
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure is provided. The FinFET device structure includes a...
2016/0148934 SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FOR THRESHOLD VOLTAGE MODULATION IN TRANSISTORS AND METHOD FOR...
A method for fabricating a semiconductor device includes forming an NMOS region and a PMOS region in a substrate, forming a first stack layer including a first...
2016/0148933 DUAL EPITAXY CMOS PROCESSING USING SELECTIVE NITRIDE FORMATION FOR REDUCED GATE PITCH
A method of forming a complementary metal oxide semiconductor (CMOS) device structure includes forming a spacer layer material over a substrate and over gate...
2016/0148932 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device including an insulating film in a first region of a semiconductor substrate; a first impurity region and a second impurity region of a...
2016/0148931 DUAL EPITAXY CMOS PROCESSING USING SELECTIVE NITRIDE FORMATION FOR REDUCED GATE PITCH
A method of forming a complementary metal oxide semiconductor (CMOS) device structure includes forming a spacer layer material over a substrate and over gate...
2016/0148930 SEMICONDUCTOR DEVICES INCLUDING A STRESSOR IN A RECESS AND METHODS OF FORMING THE SAME
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench...
2016/0148929 INTEGRATED CIRCUIT DEVICE
The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A...
2016/0148928 REVERSE CONDUCTING SEMICONDUCTOR DEVICE
A reverse conducting semiconductor device includes a high-concentration anode layer and a barrier metal layer, the width of the high-concentration anode layer...
2016/0148927 SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the...
2016/0148926 INTEGRATED CIRCUIT DEVICE
The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A...
2016/0148925 SMART SEMICONDUCTOR SWITCH
A semiconductor device may comprise a semiconductor substrate, which is doped with dopants of a first doping type and includes a semiconductor layer adjoining...
2016/0148924 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
An electrode (109) insulated from a compound semiconductor layer (102) and being in contact with an electrode (101) and a compound semiconductor layer (103) is...
2016/0148923 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device having a field-effect transistor, including a trench in a semiconductor substrate, a first insulating film in the trench, an intrinsic...
2016/0148922 DISPLAY APPARATUS
A display apparatus includes a timing controller configured to output a gate control signal through gate control lines, a gate driver configured to output gate...
2016/0148921 CIRCUIT CONFIGURATION AND MANUFACTURING PROCESSES FOR VERTICAL TRANSIENT VOLTAGE SUPPRESSOR (TVS) AND EMI FILTER
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of...
2016/0148920 STACKED MICROELECTRONIC DICE EMBEDDED IN A MICROELECTRONIC SUBSTRATE
Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one...
2016/0148919 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate, a conducting portion, and a sealing resin. The substrate has a main surface and is formed with a...
2016/0148918 MEMORY DEVICES WITH CONTROLLERS UNDER MEMORY PACKAGES AND ASSOCIATED SYSTEMS AND METHODS
Memory devices with controllers under stacks of memory packages and associated systems and methods are disclosed herein. In one embodiment, a memory device is...
2016/0148917 COOLING DEVICE FOR ELECTRONIC COMPONENTS
A cooling device for electronic components is a combination of substrate (aluminum nitride substrate--thermoelectric elements--aluminum nitride substrate) and...
2016/0148916 METHOD AND STRUCTURE FOR RECEIVING A MICRO DEVICE
A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a...
2016/0148915 LOW-IMPEDANCE POWER DELIVERY FOR A PACKAGED DIE
A system includes a semiconductor die mounted on a packaging substrate, a signal redistribution layer that is formed within the packaging substrate, a power...
2016/0148914 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A semiconductor package and a method of manufacturing a semiconductor package are provided. The semiconductor package includes a first substrate having...
2016/0148913 SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME
A semiconductor package includes a first package substrate, a first semiconductor chip disposed on the first package substrate, the semiconductor chip...
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