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Patent # Description
2016/0155857 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A semiconductor device includes first and second fin-shaped semiconductor layers on a substrate. First and second pillar-shaped semiconductor layers reside on...
2016/0155856 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL USING SAME
A thin film transistor (TFT) array substrate of a liquid crystal display (LCD) panel includes a first substrate, a gate located on the first substrate, a gate...
2016/0155855 Ferroelectric Field Effect Transistors, Pluralities Of Ferroelectric Field Effect Transistors Arrayed In Row...
A ferroelectric field effect transistor comprises a semiconductive channel comprising opposing sidewalls and an elevationally outermost top. A source/drain...
2016/0155854 SEMICONDUCTOR DEVICE
A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable semiconductor device including...
2016/0155853 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided....
2016/0155852 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of...
2016/0155851 SEMICONDUCTOR DEVICE
A semiconductor device includes a first electrode, a first insulating layer having a first opening reaching the first electrode and having a ring-shaped first...
2016/0155850 Semiconductor Device, Module, and Electronic Device
Provided is an element with stable electrical characteristics or a device including plural kinds of elements with stable electrical characteristics. The...
2016/0155849 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE
A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics...
2016/0155848 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT AND ELECTRONIC APPARATUS
Provided is a thin film transistor, including: a gate electrode; a gate insulating film covering the gate electrode; an oxide semiconductor layer provided on...
2016/0155847 THIN FILM TRANSISTOR AND ARRAY SUBSTRATE HAVING SAME
A thin film transistor includes a gate, a source, a drain, a channel layer, and a shielding layer. The shielding layer, the source, and the drain are located...
2016/0155846 Passivated and Faceted for Fin Field Effect Transistor
A fin field effect transistor (FinFET), and a method of forming, is provided. The FinFET has a fin having one or more semiconductor layers epitaxially grown on...
2016/0155845 ASYMMETRIC FIELD EFFECT TRANSISTOR CAP LAYER
A device includes a field effect transistor on an insulating film. A first fin extends vertically from a top side of a horizontal surface of a semiconductor...
2016/0155844 ASYMMETRIC ULTRATHIN SOI MOS TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING SAME
A method for manufacturing an asymmetric super-thin SOIMOS transistor is disclosed. The method comprises: a. providing a substrate composed of an insulating...
2016/0155843 MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS
Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus...
2016/0155842 PILLAR-SHAPED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
An opening extending through a gate insulating layer and a gate conductor layer is formed in the circumferential portion of a Si pillar at an intermediate...
2016/0155841 HIGH VOLTAGE TRANSISTOR STRUCTURE
An embodiment of a structure provides an enhanced performing high voltage device, configured as a lateral diffused MOS (HV LDMOS) formed in a tri-well...
2016/0155840 Semiconductor Device with Buried Doped Region and Contact Structure
A semiconductor device includes a buried doped region at a first distance to a main surface of a semiconductor body. A contact structure extends from the main...
2016/0155839 NANOGAPS ON ATOMICALLY THIN MATERIALS AS NON-VOLATILE READ/WRITABLE MEMORY DEVICES
The present invention relates to the presence of nanogaps across a metal dispersed over an atomically-thin material, such that the nanogap exposes the...
2016/0155838 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the...
2016/0155837 METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
The present invention provides a metal oxide semiconductor (MOS) device, comprising a gate structure and an epitaxial structure. The gate structure is disposed...
2016/0155836 HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In an embodiment, on an n.sup.-type SiC layer on an n.sup.+-type SiC semiconductor substrate and a p.sup.+ layer selectively formed on the n.sup.-type SiC...
2016/0155835 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer, an insulating film of silicon nitride or silicon oxynitride on the semiconductor layer, source and drain...
2016/0155834 III-Nitride Device Having a Buried Insulating Region
A semiconductor device includes a compound semiconductor material on a semiconductor substrate, the compound semiconductor material having a channel region, a...
2016/0155833 SEMICONDUCTOR DEVICE AND AN ELECTRONIC DEVICE
A semiconductor device, includes a semiconductor chip which includes: first and second terminals; a first conductive film pattern for the first terminal,...
2016/0155832 IGBT with Buried Emitter Electrode
There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a...
2016/0155831 MOS-BIPOLAR DEVICE
A clustered Insulated Gate Bipolar Transistor (CIGBT) comprising a drift region (24), region (20) formed within the n-type drift region, an N well region (22)...
2016/0155830 COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit...
2016/0155829 Transistors and Methods of Forming Transistors
Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel...
2016/0155828 METHOD OF FABRICATING THIN-FILM TRANSISTOR SUBSTRATE
A method of fabricating a TFT substrate in which a thin-film transistor is formed on a substrate, includes: forming an oxide semiconductor layer above the...
2016/0155827 METHOD FOR PRODUCING A THIN FILM TRANSISTOR
A method for producing a thin film transistor includes forming a transistor prototype on a substrate. The transistor prototype includes two transparent...
2016/0155826 METHOD FOR FABRICATING FIN FIELD EFFECT TRANSISTORS
A method of fabricating a Fin field effect transistor (FinFET) includes providing a substrate having a first fin and a second fin extending above a substrate...
2016/0155825 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a...
2016/0155824 Method of Making a FinFET Device
A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. The method includes forming first and second gate stacks over first...
2016/0155823 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device including a transistor in which an oxide semiconductor is used for a channel formation region and which has a positive threshold voltage...
2016/0155822 MANUFACTURING METHOD OF THIN FILM TRANSISTOR OF DISPLAY DEVICE
A manufacturing method of a thin film transistor of a display device, the method including forming a gate insulating layer on a semiconductor layer; attaching...
2016/0155821 Methods for Producing a Vertical Semiconductor and a Trench Gate Field Effect Semiconductor Device
A method of forming a vertical semiconductor includes providing a substrate, etching a trench for a gate electrode, providing a body contact region, providing...
2016/0155820 LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device...
2016/0155819 TRANSISTOR STRAIN-INDUCING SCHEME
A transistor device includes a gate structure disposed over a channel region of a semiconductor substrate. A source/drain recess is arranged in the...
2016/0155818 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; and forming an epitaxial layer on the...
2016/0155817 TRANSISTOR AND METHOD FOR FORMING THE SAME
A method for forming a transistor is provided. The method includes: forming a channel layer over a substrate; forming a barrier layer between the channel layer...
2016/0155816 Semiconductor Device and Fabricating Method Thereof
A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect...
2016/0155815 Self-aligned contacts
A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate...
2016/0155814 COPPER AND/OR COPPER OXIDE DISPERSION, AND ELECTROCONDUCTIVE FILM FORMED USING DISPERSION
To provide a copper and/or copper oxide dispersion capable of forming an electroconductive film exhibiting excellent stability with respect to temporal change...
2016/0155813 METHODS AND STRUCTURES FOR SPLIT GATE MEMORY CELL SCALING WITH MERGED CONTROL GATES
A memory device has first and second memory cells in and over a substrate. A first doped region is in a first active region. A top surface of the first active...
2016/0155812 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of...
2016/0155811 Fin Field Effect Transistor (FinFET)
A fin field effect transistor (FinFET) is provided. The FinFET includes a first gate having top and bottom portions of different widths, the top portion of the...
2016/0155810 SEMICONDUCTOR DEVICE WITH BURIED GATES AND FABRICATION METHOD THEREOF
A semiconductor device includes a substrate having a cell region and a peripheral region, a buried gate formed over the substrate of the cell region, a...
2016/0155809 SEMICONDUCTOR COMPONENT WITH FIELD ELECTRODE BETWEEN ADJACENT SEMICONDUCTOR FINS AND METHOD FOR PRODUCING SUCH...
A semiconductor component includes semiconductor fins formed between a base plane and a main surface of a semiconductor body. Each semiconductor fin includes a...
2016/0155808 METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon...
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