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Patent # Description
2016/0155807 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device...
2016/0155806 Structure and Method for Semiconductor Device
A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region...
2016/0155805 SECONDARY USE OF ASPECT RATIO TRAPPING HOLES AS eDRAM STRUCTURE
A semiconductor structure is provided according to a method in which an aspect ratio trapping process is employed. The structure includes a semiconductor...
2016/0155804 Method of Fabricating Fin-Field Effect Transistors (FINFETS) Having Different Fin Widths
Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin...
2016/0155803 Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the...
A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The...
2016/0155802 Semiconductor Device Having Ridges Running in Different Directions
A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate, the first and second ridges...
2016/0155801 METHOD OF FORMING STRAINED STRUCTURES OF SEMICONDUCTOR DEVICES
A method of fabricating a semiconductor device comprises providing a substrate with a shallow trench isolation (STI) within the substrate and a gate stack. A...
2016/0155800 FABRICATING STACKED NANOWIRE, FIELD-EFFECT TRANSISTORS
Methods are presented for facilitating fabricating stacked nanowire, field-effect transistors. The methods include: forming a cut mask spacer on a gate...
2016/0155799 INCREASED SURFACE AREA OF EPITAXIAL STRUCTURES IN A MIXED N/P TYPE FIN SEMICONDUCTOR STRUCTURE WITH MULTIPLE...
A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces...
2016/0155798 METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND ELECTRONIC DEVICE
A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a...
2016/0155797 HIGH VOLTAGE DEVICE WITH LOW RDSON
High voltage devices and methods for forming thereof are disclosed. A high voltage device includes a substrate having a device region, where the device region...
2016/0155796 Semiconductor Device Having a Positive Temperature Coefficient Structure
A semiconductor device includes a first load terminal at a first surface of a semiconductor body and a second load terminal at the opposing surface. An active...
2016/0155795 NLDMOS TRANSISTOR AND FABRICATION METHOD THEREOF
An N-type Lateral Diffused Metal-Oxide-Semiconductor (NLDMOS) transistor is provided. The NLDMOS transistor comprises a P-type substrate; and a semiconductor...
2016/0155794 POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Provided are a power semiconductor device and method of fabricating the same, in particular a power semiconductor device such as an Insulated Gate Bipolar...
2016/0155793 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FORMING THE SAME
According to example embodiments of inventive concepts, method of forming a semiconductor memory devices includes sequentially forming a first mold layer, a...
2016/0155792 OLED DISPLAY DEVICE
The disclosure discloses an organic light emitting diode (OLED) display device comprising: a substrate including a display area formed of a plurality of pixel...
2016/0155791 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display including a first connection line connected to an organic light emitting diode; a repair line intersecting the first...
2016/0155790 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus includes: an auxiliary electrode including: a first conductive layer; and a second conductive layer disposed on the...
2016/0155789 DISPLAY PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE
A display panel includes a substrate including a plurality of pixel regions having sub-pixel regions and a reflective region surrounding the sub-pixel regions,...
2016/0155788 Flexible Display Device With Space Reducing Wire Configuration And Manufacturing Method For The Same
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
2016/0155787 METHOD FOR FABRICATING DISPLAY DEVICE AND DISPLAY DEVICE THEREOF
A display device having an uneven electrode enhances display quality by improving the emission efficiency of the vertically polarized light. The method for...
2016/0155786 THIN FILM TRANSISTOR ARRAY SUBSTRATE
An organic light emitting diode (OLED) display device, and a method for manufacturing the OLED display device are discussed. The OLED display device according...
2016/0155785 DISPLAY DEVICE
A display device, in which self-luminous elements are arranged, prevents a leakage current through a common layer, provided for the self-luminous elements and...
2016/0155784 METHOD FOR FABRICATING DISPLAY DEVICE AND DISPLAY DEVICE
A method for fabricating a display device includes forming a thin film transistor on a base substrate, forming a first electrode connected to the thin film...
2016/0155783 Light-Emitting Device, Information Processing Device, and Imaging Device
Provided is a light-emitting device and an information processing device which include a light-emitting element mounted on a housing and an optical component...
2016/0155782 DISPLAY DEVICE
A display device includes a pixel electrode provided on an insulating surface, a pixel separation film provided on an end of the pixel electrode, a...
2016/0155781 HIGH PIXEL DENSITY ARRAY ARCHITECTURE
What is disclosed is a pixel array architecture for displays being based on a matrix of subpixels arranged in a rectilinear matrix oriented at an angle...
2016/0155780 ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING DRIVING SUB-PIXELS EACH OVERLAPPING WITH MULTIPLE COLOR SUB-PIXELS
An organic light emitting display device can include a plurality of color sub-pixels including first, second and third color sub-pixels, the first and second...
2016/0155779 STACK TYPE SEMICONDUCTOR MEMORY DEVICE
A stack type memory device and a method of manufacturing the same are provided. The stack type memory device includes a semiconductor substrate, a plurality of...
2016/0155778 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a...
2016/0155777 DISPLAY DEVICE
A display device includes a display unit in which pixels are arranged in a matrix. The pixels each include a first sub-pixel having the largest area among...
2016/0155776 DISPLAY DEVICE
According to an aspect, a display device includes a display unit in which a plurality of pixels are arranged in a matrix along two directions intersecting with...
2016/0155775 LIGHTING DEVICE
In a first aspect of the present invention, a lighting device (100) includes a first light emitter (1) that includes a first light-emitting element (10) with a...
2016/0155774 SOLID-STATE IMAGE SENSOR AND CAMERA
A solid-state image sensor is provided. The sensor includes a substrate having a light-receiving surface. The substrate includes a charge accumulation portion...
2016/0155773 PIXEL CIRCUIT
A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer...
2016/0155772 SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME
By selectively anisotropically etching a stack film formed to cover a plurality of photodiodes and a gate electrode layer of a MOS transistor, the stack film...
2016/0155771 Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same
A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor...
2016/0155770 IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME
Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a substrate, and which includes a...
2016/0155769 SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film...
2016/0155768 IMAGE SENSOR PIXEL WITH MULTIPLE STORAGE NODES
An image sensor pixel includes a photodiode, a first storage node, a second storage node, a first transfer storage gate, a second transfer storage gate, a...
2016/0155767 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a...
2016/0155766 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Provided are a semiconductor device in which a solid-state image sensing element having a backside-illuminated structure and capacitor elements storing therein...
2016/0155765 IMAGE SENSOR WITH TOLERANCE OPTIMIZING INTERCONNECTS
Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal...
2016/0155764 RECESS WITH ASYMMETRIC WALLS AND METHOD OF FABRICATING THE SAME
A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the...
2016/0155763 Monolithic Integration Techniques for Fabricating Photodetectors with Transistors on Same Substrate
Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a...
2016/0155762 THIN FILM TRANSISTOR SUBSTRATE
A thin film transistor substrate including a thin film transistor and a capacitor formed of a pair of electrodes, which includes: a first electrode above a...
2016/0155761 DISPLAY DEVICE
A driver circuit portion of a display device has a function in which image signals are written to a selected pixel successively so as to display an image on a...
2016/0155760 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
An object is at least one of a longer data retention period of a memory circuit, a reduction in power consumption, a smaller circuit area, and an increase in...
2016/0155759 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
To provide a semiconductor device including a transistor which includes an oxide semiconductor film and has excellent electrical characteristics. A...
2016/0155758 SEMICONDUCTOR DEVICE WITH THREE OR FOUR-TERMINAL-FINFET
Semiconductor devices and fabrication methods for simultaneously forming a 3T-FinFET and a 4T-FinFET on a same substrate are provided. A first fin and a second...
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