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Patent # Description
2016/0155757 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A display device comprising TFT elements having satisfactory characteristics and being easy to assemble. In the display device, a pixel emitting red light...
2016/0155756 PIXEL STRUCTURE, MANUFACTURING METHOD OF PIXEL STRUCTURE, ARRAY SUBSTRATE, AND DISPLAY PANEL
The disclosure provides a pixel structure, a manufacturing method of a pixel structure, an array substrate, a display panel, and a display device. The pixel...
2016/0155755 DISPLAY PANEL
A display panel is disclosed, which comprises a first substrate including: a base substrate; a semiconductor layer; a first insulating layer; a first scan line...
2016/0155754 Display Panel and Display Apparatus
A display panel includes a plurality of display elements disposed in a matrix manner, signal input parts to which signals to be supplied to the plurality of...
2016/0155753 DISPLAY DEVICE
The display device includes a substrate, a first gate line extending in a first direction on the substrate, a gate insulating layer formed on the substrate to...
2016/0155752 DISPLAY PANEL
A display panel is provided. The display panel has a display area and a peripheral area and includes a plurality of pixels, a plurality of data lines and a...
2016/0155751 SEMICONDUCTOR DEVICE
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on...
2016/0155750 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor memory device includes a multilayer body, a semiconductor body, a charge accumulation film, a top oxide film, a...
2016/0155749 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped...
2016/0155748 HIGH DIELECTRIC CONSTANT/METAL GATE (HK/MG) COMPATIBLE FLOATING GATE (FG)/FERROELECTRIC DIPOLE NON-VOLATILE...
Non-volatile memory devices and logic devices are fabricated using processes compatible with high dielectric constant/metal gate (HK/MG) processes for...
2016/0155747 Semiconductor Device and a Manufacturing Method Thereof
The reliability and performances of a semiconductor device having a nonvolatile memory are improved. A selection gate electrode is formed over a semiconductor...
2016/0155746 STATIC MEMORY CELL
The present disclosure provides a static memory cell and fabrication method. A first fin part is formed on a semiconductor substrate. An isolation layer is...
2016/0155745 Arrays Of Recessed Access Gate Lines, Arrays Of Conductive Lines,Arrays Of Recessed Access Gate Lines And...
An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material...
2016/0155744 MEMORY DEVICE WITH MANUFACTURABLE CYLINDRICAL STORAGE NODE
A high capacitance embedded capacitor and associated fabrication processes are disclosed for fabricating a capacitor stack in a multi-layer stack to include a...
2016/0155743 Method for Forming Patterns of Semiconductor Device
A method for forming patterns of a semiconductor device includes forming a block copolymer layer on an underlying layer, the underlying layer including a first...
2016/0155742 FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS
A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is...
2016/0155741 SEMICONDUCTOR DEVICE WITH FIN FIELD EFFECT TRANSISTORS
A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate...
2016/0155740 CMOS Devices having Dual High-Mobility Channels
A method for forming a semiconductor structure includes providing a semiconductor substrate including a first region and a second region; and forming a first...
2016/0155739 FINFETS AND METHODS OF FORMING FINFETS
An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first...
2016/0155738 MONOLITHIC BI-DIRECTIONAL CURRENT CONDUCTING DEVICE AND METHOD OF MAKING THE SAME
A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor...
2016/0155737 RC-STACKED MOSFET CIRCUIT FOR HIGH VOLTAGE (HV) ELECTROSTATIC DISCHARGE (ESD) PROTECTION
Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device...
2016/0155736 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Provided is a liquid crystal display device according to an embodiment of the present disclosure. The display device includes: a first metal layer, a first...
2016/0155735 SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE
A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped...
2016/0155734 VERTICAL TRANSISTOR WITH FLASHOVER PROTECTION
Technologies are generally described for increase of spacing between source and drain regions of a vertical high voltage transistor without a significant...
2016/0155733 Stress Reduction Apparatus and Method
A method comprises depositing a protection layer over a first semiconductor die, forming an under bump metallization structure over the protection layer,...
2016/0155732 PACKAGE ASSEMBLY INCLUDING A SEMICONDUCTOR SUBSTRATE IN WHICH A FIRST PORTION OF A SURFACE OF THE SEMICONDUCTOR...
Embodiments of the present disclosure provide an apparatus comprising a semiconductor substrate having a first surface, a second surface that is disposed...
2016/0155731 Method of Multi-Chip Wafer Level Packaging
A method of multi-chip wafer level packaging comprises attaching a first semiconductor die to a top side of a wafer, forming a first reconfigured wafer by...
2016/0155730 Semiconductor Devices, Multi-Die Packages, and Methods of Manufacture Thereof
Semiconductor device, multi-die packages, and methods of manufacture thereof are described. In an embodiment, a semiconductor device may include: first...
2016/0155729 PROXIMITY COUPLING OF INTERCONNECT PACKAGING SYSTEMS AND METHODS
Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed...
2016/0155728 STACKED PACKAGING USING RECONSTITUTED WAFERS
An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die...
2016/0155727 LIGHT EMITTING DIODE DEVICE AND LIGHT EMITTING DEVICE USING THE SAME
A light emitting diode device including a substrate, a plurality of light emitting elements, and an encapsulant. The substrate has a front surface and a back...
2016/0155726 SEMICONDUCTOR DEVICE
Technology capable of improving reliability of a semiconductor device is provided. In the present invention, a gate pad GPj formed on a front surface of a...
2016/0155725 Stacked Semicondcutor Structure and Method
A device comprises a first chip comprising a plurality of first interconnect structures over a first substrate, a plurality of first connection pads over the...
2016/0155724 SEMICONDUCTOR DEVICES HAVING STACKED STRUCTURES AND METHODS FOR FABRICATING THE SAME
Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block...
2016/0155723 SEMICONDUCTOR PACKAGE
A semiconductor device is disclosed. The semiconductor device comprises a die, a redistribution structure, and a plurality of metal posts. The redistribution...
2016/0155722 Vertical system integration
The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single...
2016/0155721 Bonding Method, Storage Medium, Bonding Apparatus and Bonding System
There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting...
2016/0155720 Method and Apparatus for Chip-To-Wafer Integration
An apparatus and a method for chip-to-wafer integration is provided. The apparatus includes a coating module, a bonding module and a cleaning module. The...
2016/0155719 CHIP BONDING APPARATUS AND CHIP BONDING METHOD
The chip bonding apparatus used in a chip bonding method includes a heating unit for heating an anisotropic conductive film at a first temperature; an...
2016/0155718 BOND WIRE FEED SYSTEM AND METHOD THEREFOR
A bond wire feed system has a wire tensioning unit with a chamber that has a wire inlet aperture and a wire outlet aperture. The wire inlet and outlet...
2016/0155717 ANISOTROPIC CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR
An anisotropic conductive film includes a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and...
2016/0155716 PACKAGE SUBSTRATE, SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A package substrate and a semiconductor package are provided. The package substrate includes an insulating layer having opposing first and second surfaces; a...
2016/0155715 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate including a plurality of conductive...
2016/0155714 SEMICONDUCTOR DEVICE, A POWER SEMICONDUCTOR DEVICE, AND A METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE
According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including:...
2016/0155713 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A semiconductor package includes: a board; a sealing member disposed on the board; at least one chip member mounted on the board and embedded in the sealing...
2016/0155712 SEMICONDUCTOR CHIP
According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the...
2016/0155711 X-RAY OBSCURATION FILM AND RELATED TECHNIQUES
An X-ray obscuration (XRO) film comprising one or more metallic wire mesh layers and an adjacent layer of indium foil having portions which extend into...
2016/0155710 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Reliability of a semiconductor device is improved. A method of manufacturing a semiconductor device includes a step of arranging a plurality of semiconductor...
2016/0155709 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device of the present invention includes a first interlayer film having a first region and a second region, a MIM structure including a lower...
2016/0155708 REDUCED-WARPAGE LAMINATE STRUCTURE
A laminate structure includes a conductive layer and a dielectric layer in contact with the conductive layer, the dielectric layer comprises a selectively...
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