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Patent # Description
2016/0155657 SURFACE PROFILE MODIFICATIONS FOR EXTENDED LIFE OF CONSUMABLE PARTS IN SEMICONDUCTOR PROCESSING EQUIPMENT
Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a...
2016/0155656 SEMICONDUCTOR-ELEMENT MANUFACTURING METHOD AND WAFER MOUNTING DEVICE
According to the present invention, a semiconductor-element manufacturing method including the steps of cutting out a ring portion of a wafer with laser light...
2016/0155655 SAMPLE HOLDER
A sample holder includes a substrate which is formed of a ceramic containing aluminum nitride as a primary component and which has an outer surface functioning...
2016/0155654 WAFER CARRIER PURGE APPARATUSES, AUTOMATED MECHANICAL HANDLING SYSTEMS INCLUDING THE SAME, AND METHODS OF...
A wafer carrier purge apparatus, an automated mechanical handling system, and a method of handling a wafer carrier during integrated circuit fabrication are...
2016/0155653 System And Method Of Opening A Load Lock Door Valve At A Desired Pressure After Venting
A system and method for reducing particulate contamination during the loading and unloading of semiconductor substrates into a load lock chamber of a...
2016/0155652 METHOD OF DEGASSING
A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the...
2016/0155651 METHOD OF FORMING WAFERLESS INTERPOSER
A method for forming a waferless interposer comprises the following steps. A transparent carrier is provided. A buffer layer is formed on the transparent...
2016/0155650 Via Structure For Packaging And A Method Of Forming
A via or pillar structure, and a method of forming, is provided. In an embodiment, a polymer layer is formed having openings exposing portions of an underlying...
2016/0155649 Method for Planarizing Semiconductor Device
A method for planarizing a semiconductor device includes steps herein. A substrate is provided, on which a stop layer is formed. A trench is formed in the...
2016/0155648 Systems and Methods for In SITU Maintenance of a Thin Hardmask During an Etch Process
Methods of patterning a target material layer are provided herein. The method includes steps of positioning a semiconductor wafer having the target material...
2016/0155647 ETCH SYSTEM AND METHOD FOR SINGLE SUBSTRATE PROCESSING
Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch...
2016/0155646 HARD MASK REMOVAL SCHEME
A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is...
2016/0155645 ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a...
2016/0155644 Removal Of Defects By In-Situ Etching During Chemical-Mechanical Polishing Processing
Technologies for a process used to reduce the height of a raised profile of a device. One or more raised profiles on one or more layers of a device are removed...
2016/0155643 LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist...
2016/0155642 Deposited Material and Method of Formation
A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition...
2016/0155641 System and Method for Mitigating Oxide Growth in a Gate Dielectric
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in...
2016/0155640 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
A method of manufacturing a silicon carbide semiconductor device includes grinding a back surface of a semiconductor substrate formed of silicon carbide to...
2016/0155639 Mechanisms for Forming Patterns Using Lithography Processes
The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a...
2016/0155638 CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS
A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed...
2016/0155637 METHOD FOR PRODUCING STRUCTURED COATINGS, STRUCTURED COATINGS PRODUCED ACCORDING TO SAID METHOD AND USE THEREOF
The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a...
2016/0155636 DEPOSITION METHOD FOR PLANAR SURFACES
A method for producing a substantially planar surface for semiconductor processing to improve lithography, planarization, and other process steps that benefit...
2016/0155635 ATOMIC LAYER DEPOSITION OF GeO2
Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following:...
2016/0155634 Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and...
A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate,...
2016/0155633 AZIDE-BASED CROSSLINKING AGENTS
The present invention provides compounds of formula ##STR00001## a process for their preparation, a solution comprising these compounds, a process for the...
2016/0155632 Anti-Reflective Layer and Method
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a...
2016/0155631 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
To improve the performance of a semiconductor device, a semiconductor device manufacturing method includes an exposing process of performing pattern exposure...
2016/0155630 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
A method for manufacturing a semiconductor device includes: supplying a remover to a substrate including a Si-containing film on which a denatured layer is...
2016/0155629 FORMATION OF HETEROEPITAXIAL LAYERS WITH RAPID THERMAL PROCESSING TO REMOVE LATTICE DISLOCATIONS
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer...
2016/0155628 SUBSTRATE REGENERATION METHOD AND REGENERATED SUBSTRATE
Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface...
2016/0155627 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device is disclosed. The method includes forming a film on a substrate by performing a cycle a predetermined number...
2016/0155626 Method for Manufacturing Semiconductor Device
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a...
2016/0155625 DISCHARGE LAMP
A discharge lamp includes an emitter other than thorium, which is added to a cathode in a luminous tube. Early depletion of the emitter due to excessive...
2016/0155624 Multi-Reflecting Mass Spectrometer With High Throughput
Method and embodiments are provided for tandem mass spectrometer designed for extremely large charge throughput up to 1E+10 ion/sec. In one operation mode, the...
2016/0155623 METHOD AND DEVICE FOR A COATED CORONA IONIZATION SOURCE
A corona ionization source assembly and fabrication methods are described that include a fine wire including a wire core including a first material, and a wire...
2016/0155622 ION FOCUSING
The invention generally relates to apparatuses for focusing ions at or above ambient pressure and methods of use thereof. In certain embodiments, the invention...
2016/0155621 Method of Recording ADC Saturation
A method of mass spectrometry is disclosed comprising digitising a plurality of individual signals or transients and summing the plurality of digitised signals...
2016/0155620 Imaging Mass Spectrometry Method and Device
A method of performing imaging mass spectrometry of a sample. The method comprises performing a first mass analysis of the sample using a first mass analyzer...
2016/0155619 FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING
Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on...
2016/0155618 VACUUM ION SPUTTERING TARGET DEVICE
A vacuum ion sputtering target device is disclosed, which has an accommodating space provided with a substrate, a magnetron, a target, and a back plate...
2016/0155617 PLASMA PROCESSING APPARATUS AND SAMPLE STAGE THEREOF
There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the...
2016/0155616 SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus includes a chamber, and a plasma generator disposed at an upper portion of the chamber. A susceptor is disposed in the...
2016/0155615 METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM
A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled...
2016/0155614 SUPPORT UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein, a support unit placed...
2016/0155613 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes: a processing chamber; a substrate holding unit; a processing gas supply unit; a RF antenna having an inner antenna coil...
2016/0155612 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS
Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature...
2016/0155611 PLASMA PROCESSING APPARATUS
A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a...
2016/0155610 MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM PATTERN WRITING METHOD
A multiple charged particle beam lithography apparatus includes a weighting coefficient operation unit to operate a plurality of weighting coefficients that...
2016/0155609 METHOD FOR GENERATING WRITING DATA
A method for generating writing data to be input to a writing apparatus, which writes a figure pattern on a target object by using a charged particle beam,...
2016/0155608 MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI CHARGED PARTICLE BEAM WRITING METHOD
A multi charged particle beam writing apparatus includes a deflector to collectively deflect each beam in an "on" state, by tracking control in such a way as...
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