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Patent # Description
2016/0163885 COLLECTOR SHEET FOR SOLAR CELL AND SOLAR CELL MODULE EMPLOYING SAME
Provided is a collector sheet for a solar cell, wherein the collector sheet for solar cell can prevent short circuiting between a non-photoreception surface...
2016/0163884 PROCESS OF FABRICATION OF ELECTRONIC DEVICES AND ELECTRONIC DEVICE WITH A DOUBLE ENCAPSULATION RING
An integrated circuit chip is mounted on top of a base wafer, and a protection wafer is mounted on top of the integrated circuit chip. An encapsulation block...
2016/0163883 BIDIRECTIONAL ZENER DIODE
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode...
2016/0163882 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
To provide a semiconductor device with nonvolatile memory, having improved performance. A memory cell has control and memory gate electrodes on a semiconductor ...
2016/0163881 THIN-FILM TRANSISTOR
Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an...
2016/0163880 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor...
2016/0163879 SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS PLANES, RELATED DESIGN STRUCTURE AND METHOD...
A semiconductor device is disclosed. The semiconductor device can include a first dielectric layer disposed on a substrate; a set of bias lines disposed on the...
2016/0163878 THIN-FILM TRANSISTOR, METHOD OF FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the...
2016/0163877 SEMICONDUCTOR DEVICE
A semiconductor device includes a first multi-channel active pattern, a field insulation layer disposed on the first multi-channel active pattern and including...
2016/0163876 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure...
2016/0163875 Silicide Process Using OD Spacers
A device includes a semiconductor substrate including an active region. The active region includes a first sidewall. An isolation region extends from a top...
2016/0163874 SEMICONDUCTOR DEVICE
A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes...
2016/0163873 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the...
2016/0163872 SEMICONDUCTOR DEVICE
To provide a semiconductor device which can be miniaturized or highly integrated. To obtain a semiconductor device including an oxide semiconductor, which has...
2016/0163871 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a...
2016/0163870 Semiconductor Device, Manufacturing Method of Semiconductor Device, and Electronic Device
Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the...
2016/0163869 TRANSISTOR
Change in electric characteristics of a semiconductor device including a transistor having a crystalline oxide semiconductor is suppressed, and reliability...
2016/0163868 THIN-FILM TRANSISTOR, METHOD OF FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed...
2016/0163867 OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the...
2016/0163866 CRYSTALLIZATION METHOD FOR OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME, AND...
An oxide semiconductor crystallization method may include depositing an In--Ga--Zn oxide over the substrate while heating a substrate to a temperature of 200...
2016/0163865 OXIDE SEMICONDUCTOR THIN FILM AND THIN FILM TRANSISTOR
Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In.sub.2O.sub.3 phase, suitable as a channel layer material for a...
2016/0163864 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate...
2016/0163863 CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON A FINFET DEVICE
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming an initial epi...
2016/0163862 EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE
Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are...
2016/0163861 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
Semiconductor devices and methods of manufacturing semiconductor devices. A semiconductor device includes a metal gate electrode stacked on a semiconductor...
2016/0163860 SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF FORMING THE SAME
A semiconductor device having a stressor is provided. A first trench and a second trench spaced apart from each other are formed in a substrate. A channel area...
2016/0163859 NITRIDE LAYER PROTECTION BETWEEN PFET SOURCE/DRAIN REGIONS AND DUMMY GATE DURING SOURCE/DRAIN ETCH
Methods of using a nitride to protect source/drain regions during dummy gate removal and the resulting devices are disclosed. Embodiments include forming an...
2016/0163858 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a substrate, first and second isolation layers, an insulation layer pattern, and a gate structure. The substrate has a cell...
2016/0163857 SEMICONDUCTOR DEVICE
A semiconductor device with improved characteristics is provided. The semiconductor device includes a LDMOS, a source plug electrically coupled to a source...
2016/0163856 VERTICAL NANOWIRE TRANSISTOR WITH AXIALLY ENGINEERED SEMICONDUCTOR AND GATE METALLIZATION
Vertically oriented nanowire transistors including semiconductor layers or gate electrodes having compositions that vary over a length of the transistor. In...
2016/0163855 High Voltage Lateral DMOS Transistor with Optimized Source-Side Blocking Capability
An integrated circuit and method having an extended drain MOS transistor with a buried drift region, a drain diffused link, a channel diffused link, and an...
2016/0163854 SEMICONDUCTOR DEVICE
A front surface electrode common to a plurality of unit cells is provided substantially all over an active region of a semiconductor element. A plurality of...
2016/0163853 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A silicon carbide semiconductor device includes a silicon carbide layer having a first main surface and a second main surface opposite to the first main...
2016/0163852 Semiconductor Device with a Trench Electrode
A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode...
2016/0163851 STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE ACTIVE REGIONS
A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active...
2016/0163850 LDMOS FINFET DEVICE AND METHOD OF MANUFACTURE USING A TRENCH CONFINED EPITAXIAL GROWTH PROCESS
A FinFET transistor includes a fin of semiconductor material with a transistor gate electrode extending over a channel region. Raised source and drain regions...
2016/0163849 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR
A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a...
2016/0163848 MISFET Device
Embodiments of the present disclosure include a MISFET device. An embodiment includes a source/drain over a substrate, a first etch stop layer on the...
2016/0163847 Semiconductor Device and Method for Forming the Same
A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and...
2016/0163846 METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-POLAR III-NITRIDE SEMICONDUCTORS WITH HIGH...
A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an ...
2016/0163845 FIELD-EFFECT COMPOUND SEMICONDUCTOR DEVICE
Disclosed is a field effect compound semiconductor device wherein both reduction of sheet resistance due to high-concentration .delta.-doping, and reduction of...
2016/0163844 Method and Structure for III-V FinFET
A method for fabricating a semiconductor device comprises forming a fin in a layer of III-V compound semiconductor material on a silicon-on-insulator...
2016/0163843 Quantum Well Fin-Like Field Effect Transistor (QWFINFET) Having a Two-Section Combo QW Structure
The present disclosure provides a quantum well fin field effect transistor (QWFinFET). The QWFinFET includes a semiconductor fin over a substrate and a combo...
2016/0163842 FORMATION OF CMOS DEVICE USING CARBON NANOTUBES
A method, and the resulting structure, of making a CMOS device from carbon nanotube substrate, where a carbide contact is formed in a source drain region. The...
2016/0163841 FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and...
2016/0163840 TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide...
2016/0163839 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable...
2016/0163838 METHOD OF FABRICATING THIN-FILM SEMICONDUCTOR SUBSTRATE
A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a...
2016/0163837 FIN FIELD EFFECT TRANSISTOR DEVICE AND FABRICATION METHOD THEREOF
A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed...
2016/0163836 FinFET with Bottom SiGe Layer in Source/Drain
A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure...
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