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Patent # Description
2016/0163584 SELF-ALIGNED DOUBLE PATTERNING PROCESS FOR TWO DIMENSIONAL PATTERNS
One method includes forming a mandrel element above a hard mask layer, forming first and second spacers on the mandrel element, removing the mandrel element, a...
2016/0163583 ISOLATION SCHEME FOR HIGH VOLTAGE DEVICE
Semiconductor device isolation and method of forming thereof are presented. A base substrate with lightly doped first polarity type dopants is provided. A...
2016/0163582 FORMATION OF ISOLATION SURROUNDING WELL IMPLANTATION
Embodiments of present invention provide a method of making well isolations. The method includes forming a hard-mask layer on top of said substrate; forming a...
2016/0163581 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In one embodiment, a semiconductor device includes a first insulator, and conductors and second insulators alternately provided on the first insulator. Each...
2016/0163580 CHUCKING WARPED WAFER WITH BELLOWS
A vacuum chuck has at least one suction assembly that pulls a wafer surface toward a chucking surface. The suction assembly may be used with a wafer that is...
2016/0163579 METHOD FOR MANUFACTURING LAMINATE, METHOD FOR MANUFACTURING SEALED SUBSTRATE LAMINATE, SEALED SUBSTRATE...
A laminate manufactured by forming a step difference in a substrate by grinding a periphery edge portion to have such a size that a surface on the inner side...
2016/0163578 Semiconductor Packages and Methods of Forming the Same
A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias...
2016/0163577 ELECTROSTATIC CHUCK HAVING REDUCED POWER LOSS
Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an...
2016/0163576 PROCESSING OBJECT TRANSPORT SYSTEM, AND SUBSTRATE INSPECTION SYSTEM
A substrate inspection system includes a plurality of processing units, and each processing unit is provided with a transport mechanism configured to transport...
2016/0163575 DOOR FOR THIN PLATE CONTAINER
A door which closes an opening in a container body of a thin plate container. A door body has latch passage holes in the circumference thereof, which...
2016/0163574 DETERMINING CRITICAL PARAMETERS USING A HIGH-DIMENSIONAL VARIABLE SELECTION MODEL
A high-dimensional variable selection unit determines a list of critical parameters from sensor data and parametric tool measurements from a semiconductor...
2016/0163573 SUBSTRATE TREATING APPARATUS WITH PARALLEL SUBSTRATE TREATMENT LINES
A substrate treating apparatus for treating substrates includes a plurality of substrate treatment lines arranged vertically for carrying out plural types of...
2016/0163572 METHOD AND SYSTEM RELATED TO SEMICONDUCTOR PROCESSING EQUIPMENT
A system including a first linear bearing, a second linear bearing, a first shuttle, and a second shuttle. The first linear bearing is mounted in and disposed...
2016/0163571 APPARATUS FOR REMOVING A RING-SHAPED REINFORCEMENT EDGE FROM A GROUND SEMICONDUCTOR WAFER
An apparatus for removing a ring-shaped reinforcement, edge from a ground semiconductor wafer, which is cohesively connected to an elastic carrier film and is...
2016/0163570 SYSTEM AND METHOD FOR FORMING A SEALED CHAMBER
According to an embodiment of the invention, there is provided a system, comprising: a first chamber; a second chamber; a chuck; a movement system; wherein the...
2016/0163569 Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones
A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for...
2016/0163568 METHODOLOGIES FOR RINSING TOOL SURFACES IN TOOLS USED TO PROCESS MICROELECTRONIC WORKPIECES
Rinsing methodologies and components to accomplish rinsing of tool surfaces in tools that are used to process one or more microelectronic workpieces. The...
2016/0163567 SUBSTRATE SURFACE METALLIZATION METHOD AND SUBSTRATE HAVING METALLIZED SURFACE MANUFACTURED BY THE SAME
A coating device for coating a coating liquid onto a substrate includes: a coating head having a coating-liquid outlet, adapted to move with respect to the...
2016/0163566 INTEGRATED CIRCUIT PACKAGE PAD AND METHODS OF FORMING
A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias...
2016/0163565 MANUFACTURING METHOD OF SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE
When a plating layer is formed on through holes in semiconductor packages, first and second stacked bodies are stacked with first and second cavities formed in...
2016/0163564 Semiconductor Packages and Methods of Forming the Same
A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias...
2016/0163563 ETCHING METHOD
There is provided an etching method for etching an object to be processed by using a substrate processing apparatus including a process chamber including a...
2016/0163562 Etching Method, and Recording Medium
An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate...
2016/0163561 TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate....
2016/0163560 SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM
There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer...
2016/0163559 METHOD FOR RECESSING A CARBON-DOPED LAYER OF A SEMICONDUCTOR STRUCTURE
Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess...
2016/0163558 TECHNIQUE TO DEPOSIT METAL-CONTAINING SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor...
2016/0163557 TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a substrate. Separate etching and...
2016/0163556 TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate....
2016/0163555 METHODS OF FORMING FEATURES HAVING DIFFERING PITCH SPACING AND CRITICAL DIMENSIONS
Methods of forming features having differing pitch spacing and critical dimensions are disclosed herein. One method includes forming an underlying layer of...
2016/0163554 PLASMA ETCHING METHOD
A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A...
2016/0163553 METHOD FOR IMPROVING QUALITY OF SPALLED MATERIAL LAYERS
Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture...
2016/0163552 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF
A non-volatile memory including a substrate, a first stacked structure, a second stacked structure, a fifth conductive layer, a first doped region, and a...
2016/0163551 METHODS OF FORMING METAL SILICIDE REGIONS ON SEMICONDUCTOR DEVICES USING AN ORGANIC CHELATING MATERIAL DURING A...
A method includes forming a refractory metal alloy layer above a silicon-containing material, performing a first heating process to form a metal silicide...
2016/0163550 Gate Electrodes with Notches and Methods for Forming the Same
A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the...
2016/0163549 LASER PROCESSING METHOD
A planar object to be processed 1 comprising a hexagonal SiC substrate 12 having a front face 12a forming an angle corresponding to an off-angle with a c-plane...
2016/0163548 Masking Process and Structures Formed Thereby
A method, e.g., of forming and using a mask, includes forming an inverse mask over a dielectric layer; forming a mask layer conformally over the inverse mask;...
2016/0163547 METHODS OF FORMING FINE PATTERNS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE METHODS
The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on...
2016/0163546 3D MATERIAL MODIFICATION FOR ADVANCED PROCESSING
Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques....
2016/0163545 SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND...
A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made...
2016/0163544 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of...
2016/0163543 ACTIVE STRUCTURES OF A SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME
A method of forming patterns of a semiconductor device, including partially etching an upper portion of a substrate to form first preliminary active patterns...
2016/0163542 OXIDE SEMICONDUCTOR FILM, FILM FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
An oxide semiconductor film with high crystallinity is formed. An oxide semiconductor film having a single crystal region, which is formed by a sputtering...
2016/0163541 GROUP III NITRIDE SUBSTRATES AND THEIR FABRICATION METHOD
Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes...
2016/0163540 METHOD FOR CURING FLOWABLE LAYER
Methods for forming a semiconductor structure are provided. The method for forming a semiconductor structure includes forming a flowable layer over a substrate...
2016/0163539 METHODS FOR DEPOSITING SILICON OXIDE
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at...
2016/0163538 METHOD FOR PRODUCING METAL OXIDE FILM AND METHOD FOR PRODUCING TRANSISTOR
Provided is a technology for efficiently obtaining a metal oxide film having good adhesiveness. A method of producing a metal oxide film includes: an...
2016/0163537 SEMICONDUCTOR DEVICE INCLUDING h-BN INSULATING LAYER AND ITS MANUFACTURING METHOD
A semiconductor device includes a support substrate, an insulating layer provided on the support substrate, and a semiconductor element provided on the...
2016/0163536 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for...
2016/0163535 LAYER TRANSFERRING PROCESS
A process for transferring a useful layer to a receiver substrate includes providing a donor substrate comprising an intermediate layer, a carrier substrate,...
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