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Patent # Description
2016/0172399 SOLID STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
A solid-state imaging device includes a phase detection photodiode, a light shielding film, and a light absorption film. The phase detection photodiode has a...
2016/0172398 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
An image sensor includes a plurality of filters, an air spacer formed between the plurality of filters, and a protection layer including a first part formed on...
2016/0172397 Solid State Image Sensor with Low Capacitance Floating Diffusion
Some embodiments provide an image sensor having a low capacitance floating diffusion node based on by reducing the width of the overlap between the floating...
2016/0172396 SEMICONDUCTOR DEVICE FOR RADIATION DETECTION
Variation in threshold voltages in a device operation is reduced. An insulator layer which is disposed to be opposed to a channel region 41 of a MOS transistor and...
2016/0172395 SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric...
2016/0172394 Image Sensors Including Non-Aligned Grid Patterns
An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a...
2016/0172393 CURVED IMAGE SENSOR, METHOD FOR FABRICATING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME
A curved image sensor includes a supporting substrate, a bonding pattern provided over the supporting substrate a sensing substrate provided over the...
2016/0172392 MECHANISMS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE STRUCTURE
A backside illuminated image sensor device structure and methods for forming the same are provided. The method for manufacturing a backside illuminated image...
2016/0172391 Methods of Fabricating Image Sensors Having Deep Trenches Including Negative Charge Material
Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the...
2016/0172390 SOLID-STATE IMAGE SENSOR AND IMAGE CAPTURING APPARATUS USING THE SAME
The present invention provides a solid-state image sensor in which degradation in image quality can be reduced. The solid-state image sensor includes an...
2016/0172389 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
A manufacturing method of a thin film transistor includes the following steps. A substrate is provided first. A semiconductor layer is then formed on the...
2016/0172388 METHOD OF FABRICATING ARRAY SUBSTRATE
A method of fabrication an array substrate which includes foaming an oxide semiconductor layer on a substrate; forming a gate insulating layer corresponding to...
2016/0172387 LTPS ARRAY SUBSTRATE
An LTPS array substrate includes a plurality of LTPS thin-film transistors and a bottom transparent conductive layer, a protective layer, and a top transparent...
2016/0172386 COPPER-ALLOY BARRIER LAYERS FOR METALLIZATION IN THIN-FILM TRANSISTORS AND FLAT PANEL DISPLAYS
In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor...
2016/0172385 ARRAY SUBSTRATE AND DISPLAY DEVICE USING THE SAME
An array substrate includes: a gate wiring; a source wiring, which is formed to intersect the gate wiring; a passivation film, which covers the source wiring;...
2016/0172384 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY
The invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate...
2016/0172383 Semiconductor Device and Driving Method Thereof
The semiconductor device includes a transistor, first to N-th switches (N is a natural number of three or more), and first to (N-1)-th capacitors. A first...
2016/0172382 Semiconductor Device and Method for Manufacturing the Same
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by...
2016/0172381 SHALLOW EXTENSION JUNCTION
A method for fabricating a semiconductor device includes receiving a finned substrate comprising an isolation layer with a plurality of semiconductor fins...
2016/0172380 MODIFIED FIN CUT AFTER EPITAXIAL GROWTH
A method of forming a gate located above multiple fin regions of a semiconductor device. The method may include removing unwanted fin structures after...
2016/0172379 MODIFIED FIN CUT AFTER EPITAXIAL GROWTH
A method of forming a gate located above multiple fin regions of a semiconductor device. The method may include removing unwanted fin structures after...
2016/0172378 CMOS GATE CONTACT RESISTANCE REDUCTION
A gate contact with reduced contact resistance is provided by increasing contact area between the gate contact and a gate conductive portion of a gate...
2016/0172377 DISPLAY DEVICE
A display device includes: a scan line extending in a first direction; first, second and third signal lines extending in a second direction; a first sub-pixel...
2016/0172376 Array substrate and method for fabricating the same, liquid crystal display panel and reflective liquid crystal...
This disclosure provides an array substrate, comprising a substrate plate, and a thin film transistor and a pixel electrode formed on the substrate plate, said...
2016/0172375 Methods for Cell Boundary Encroachment and Semiconductor Devices Implementing the Same
A semiconductor device is disclosed to include a plurality of cells. Each of the cells has a respective outer cell boundary defined to circumscribe the cell in...
2016/0172374 THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE
A semiconductor device includes word lines stacked in a cell region of a substrate and each of the word lines includes a first conductive layer. At least one...
2016/0172373 Memory Arrays and Methods of Fabricating Integrated Structures
Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and...
2016/0172372 SEMICONDUCTOR DEVICES
A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide...
2016/0172371 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes interlayer insulating films spaced apart from each other and stacked over each other, and wherein first ends of the interlayer...
2016/0172370 SELECTIVE BLOCKING DIELECTRIC FORMATION IN A THREE-DIMENSIONAL MEMORY STRUCTURE
A plurality of blocking dielectric portions can be formed between a memory stack structure and an alternating stack of first material layers and second...
2016/0172369 FORMING MEMORY USING DOPED OXIDE
A method is provided for manufacturing a memory device. A strip of semiconductor material is formed having a memory region, a contact landing area region and a...
2016/0172368 Contact For Vertical Memory With Dopant Diffusion Stopper And Associated Fabrication Method
A memory device and corresponding fabrication method prevent undesired diffusion of dopants from a silicon cap of a vertical NAND string to a channel film of...
2016/0172367 MANUFACTURING METHOD OF NON-VOLATILE MEMORY
A method of manufacturing a non-volatile memory is provided. A substrate including a first region and a second region is provided. A first patterning process...
2016/0172366 THREE DIMENSIONAL MEMORY DEVICE WITH BLOCKING DIELECTRIC HAVING ENHANCED PROTECTION AGAINST FLUORINE ATTACK
Blocking dielectric structures and/or thicker barrier metal films for preventing or reducing fluorine diffusion are provided. A blocking dielectric layer can...
2016/0172365 Ferroelectric memory device and fabrication process thereof, and methods for operation thereof
A new form of a solid-state non-volatile memory cell is presented. The solid-state memory cell comprises a series of different layers of ferroelectric...
2016/0172364 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region...
2016/0172363 Method of Forming Contacts for a Memory Device
The present invention is generally directed to a method of forming contacts for a memory device. In one illustrative embodiment, the method includes forming a...
2016/0172362 CMOS TRANSISTORS WITH IDENTICAL ACTIVE SEMICONDUCTOR REGION SHAPES
A disposable semiconductor material is deposited to form disposable semiconductor material portions on semiconductor fins. A first dielectric liner is...
2016/0172361 Methods of Forming Field Effect Transistors Having Silicon-Germanium Source/Drain Regions Therein
Methods of forming field effect transistors include selectively etching source and drain region trenches into a semiconductor region using a gate electrode as...
2016/0172360 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Disclosed herein is a semiconductor integrated circuit device including a standard cell with a fin extending in a first direction. The fin and a gate line...
2016/0172359 MOISTURE BLOCKING STRUCTURE AND/OR A GUARD RING, A SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND A METHOD OF...
A moisture blocking structure includes an active fin disposed on a sealing region of a substrate, the substrate including a chip region and the sealing region...
2016/0172358 INTEGRATED CIRCUIT DEVICES INCLUDING SOURCE/DRAIN EXTENSION REGIONS AND METHODS OF FORMING THE SAME
Integrated circuit devices may include a stack that includes channel regions and gate electrodes stacked in an alternating sequence in a vertical direction....
2016/0172357 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a first active region and a second active region spaced apart from each other, a gate electrode on the first active region and...
2016/0172356 INTER-LEVEL DIELECTRIC LAYER IN REPLACEMENT METAL GATES AND RESISTOR FABRICATION
Embodiments in accordance with the present invention include a method of fabricating a semiconductor device including forming a first dummy gate in an active...
2016/0172355 METHOD OF FORMING A GATE SHIELD IN AN ED-CMOS TRANSISTOR AND A BASEOF A BIPOLAR TRANSISTOR USING BICMOS...
A method of fabricating a MOSFET transistor in a SiGe BICMOS technology and resulting structure having a drain-gate feedback capacitance shield formed between...
2016/0172354 SEMICONDUCTOR DEVICE WITH ELECTRO-STATIC DISCHARGE PROTECTION DEVICE ABOVE SEMICONDUCTOR DEVICE AREA
A semiconductor device includes a semiconductor substrate on which a semiconductor device is formed; first and second pads; a first insulating film which is...
2016/0172353 III-Nitride Switching Device with an Emulated Diode
Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching...
2016/0172352 Power Semiconductor Device with Improved Stability and Method for Producing the Same
A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact....
2016/0172351 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Disclosed herein is a semiconductor integrated circuit device which includes a standard cell with a plurality of fins extending in a first direction and...
2016/0172350 Electrostatic Discharge Protection Circuitry
Various implementations described herein are directed to an integrated circuit for electrostatic discharge (ESD) protection. The integrated circuit may include...
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