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Patent # Description
2016/0181394 III-V MOSFETS With Halo-Doped Bottom Barrier Layer
Techniques for controlling short channel effects in III-V MOSFETs through the use of a halo-doped bottom (III-V) barrier layer are provided. In one aspect, a...
2016/0181393 BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FABRICATION
A structure, including a bipolar junction transistor and method of fabrication thereof, is provided herein. The bipolar junction transistor includes: a...
2016/0181392 PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
A semiconductor structure is provided. The semiconductor includes a gate stack on a substrate. The semiconductor includes a first set of sidewall spacers on...
2016/0181391 DIODE STRUCTURES WITH CONTROLLED INJECTION EFFICIENCY FOR FAST SWITCHING
This invention discloses a semiconductor device disposed in a semiconductor substrate. The semiconductor device includes a first semiconductor layer of a first...
2016/0181390 SEMICONDUCTOR DEVICES HAVING LOW CONTACT RESISTANCE AND LOW CURRENT LEAKAGE
The present disclosure is directed to a device and method for reducing the resistance of the middle of the line in a transistor. The transistor has electrical...
2016/0181389 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THE SAME, AND...
A thin film transistor (TFT) substrate includes an insulating layer, an electrode on the insulating layer, and a main buffering layer connecting a side surface...
2016/0181388 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING A METAL NITRIDE LAYER AND SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes introducing nitrogen into a metal layer or into a metal nitride layer, the metal layer or metal...
2016/0181387 THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY
A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate...
2016/0181386 SEMICONDUCTOR DEVICE WITH AN INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a...
2016/0181385 Semiconductor Devices Having Buried Contact Structures and Methods of Manufacturing the Same
Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the...
2016/0181384 REDUCED TRENCH PROFILE FOR A GATE
The present disclosure is directed to a gate structure for a transistor. The gate structure is formed on a substrate and includes a trench. There are sidewalls...
2016/0181383 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial...
2016/0181382 METHOD FOR FABRICATING A TRANSISTOR WITH A RAISED SOURCE-DRAIN STRUCTURE
A method for forming a transistor includes defining agate structure on a top surface of a first semiconductor layer of a silicon-on-insulator (SOI) substrate....
2016/0181381 TRENCH EPITAXIAL GROWTH FOR A FINFET DEVICE HAVING REDUCED CAPACITANCE
A FinFET device includes a semiconductor fin, a gate electrode extending over a channel of the fin and sidewall spacers on each side of the gate electrode. A...
2016/0181380 Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the Same
Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. A source region and a drain...
2016/0181379 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes: a semiconductor substrate; a plurality of trench gate electrodes that have a stripe shape in plan view and are located in...
2016/0181378 DEVICE HAVING A SHIELD PLATE DOPANT REGION AND METHOD OF MANUFACTURING SAME
A transistor includes a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, a set of electrically conductive shield...
2016/0181377 SEMICONDUCTOR DEVICE HAVING DUAL WORK FUNCTION GATE STRUCTURE, METHOD FOR FABRICATING THE SAME, MEMORY CELL...
A semiconductor device includes a body including a first junction region; a pillar positioned over the body, and including a vertical channel region and a...
2016/0181376 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE
An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. An aluminum film and a...
2016/0181375 SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND...
A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made...
2016/0181374 Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
A silicon carbide semiconductor device includes a silicon carbide substrate and a gate electrode. The silicon carbide substrate includes a first source region...
2016/0181373 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A silicon carbide semiconductor device includes a silicon carbide layer and a gate insulating layer. The silicon carbide layer has a main surface. The gate...
2016/0181372 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A silicon carbide layer includes a drift region, a body region and a source region. The drift region constitutes a first main surface and has a first...
2016/0181371 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The semiconductor device includes: a substrate, an n-type drift region formed on a main surface of the substrate; a p-type well region, an n-type drain region...
2016/0181370 Advanced Transistors with Punch Through Suppression
An advanced transistor with punch through suppression includes a gate with length Lg, a well doped to have a first concentration of a dopant, and a screening...
2016/0181369 JFET DEVICE AND ITS MANUFACTURING METHOD
The present invention discloses a JFET device, whose drift region is composed of a first deep well region doped with the second conduction type that is formed...
2016/0181368 STRUCTURES AND DEVICES INCLUDING A TENSILE-STRESSED SILICON ARSENIC LAYER AND METHODS OF FORMING SAME
Structures including a tensile-stressed silicon arsenic layer, devices including the structures, and methods of forming the devices and structures are...
2016/0181367 FORMATION OF FINFET JUNCTION
A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is...
2016/0181366 FIELD EFFECT TRANSISTORS INCLUDING FIN STRUCTURES WITH DIFFERENT DOPED REGIONS AND SEMICONDUCTOR DEVICES...
Field effect transistors are provided. According to the field effect transistor, a source region and a drain region are provided on a substrate and a fin...
2016/0181365 SEMICONDUCTOR DEVICES HAVING CHANNEL REGIONS WITH NON-UNIFORM EDGE
A semiconductor device may include a drift region having a first conductivity type, a source region having the first conductivity type, and a well region...
2016/0181364 DUAL-CHANNEL FIELD EFFECT TRANSISTOR DEVICE HAVING INCREASED AMPLIFIER LINEARITY
A dual-channel field effect transistor (FET) device having increased amplifier linearity and a method of manufacturing same are disclosed. In an embodiment,...
2016/0181363 MOSFET STRUCTURE AND METHOD FOR MANUFACTURING SAME
Provided is a MOSFET comprising: a substrate (100); a gate stack (500) on the substrate (100); source/drain regions (305) in the substrate on both sides of the...
2016/0181362 Silicide Regions in Vertical Gate All Around (VGAA) Devices and Methods of Forming Same
An embodiment semiconductor device includes a nanowire extending upwards from a semiconductor substrate, a source/drain region in the nanowire, and a channel...
2016/0181361 Semiconductor Devices with Cavities
A semiconductor device comprises a first semiconductor wafer including a cavity formed in the first semiconductor die. A second semiconductor die is bonded to...
2016/0181360 SEMICONDUCTOR STRUCTURE WITH ETCHED FIN STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor structure and a method for forming the same are provided. The method includes forming a first fin structure and a second fin structure over a...
2016/0181359 ZIG-ZAG TRENCH STRUCTURE TO PREVENT ASPECT RATIO TRAPPING DEFECT ESCAPE
A semiconductor structure including: trench-defining layer; an epitaxial layer; and a set of defect-blocking member(s). The trench-defining layer includes a...
2016/0181358 SUPER JUNCTION LDMOS FINFET DEVICES
A fin-shaped field-effect transistor (finFET) device is provided. The finFET device includes a substrate material with a top surface and a bottom surface. The...
2016/0181357 SEMICONDUCTOR DEVICE
In a semiconductor device, a p.sup.+ back gate region (PBG) is arranged in a main surface (Si) between first and second portions (P1, P2) of an n.sup.+ source...
2016/0181356 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductivity type semiconductor layer that includes a wide bandgap semiconductor and a surface. A trench, including a...
2016/0181355 SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME
A Schottky barrier diode provided herein includes: a semiconductor substrate; and an anode electrode being in contact with the semiconductor substrate. The...
2016/0181354 SEMICONDUCTOR DEVICE
A semiconductor device in which the concentration of an electric field is suppressed in a region overriding a drain region and a source region. A drain region...
2016/0181353 TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER
A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a...
2016/0181352 CAPACITOR STRUCTURE COMPATIBLE WITH NANOWIRE CMOS
A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least...
2016/0181351 ULTRAHIGH VOLTAGE RESISTOR, SEMICONDUCTOR DEVICE, AND THE MANUFACTURING METHOD THEREOF
An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a...
2016/0181350 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus includes a substrate, thin film transistors (TFTs), and organic light-emitting diode elements (OLEDs). First...
2016/0181349 ORGANIC LIGHT-EMITTING DIODE DISPLAY
An organic light-emitting diode display is disclosed. In one aspect, the display includes a plurality of data lines formed in a display area and a plurality of...
2016/0181348 ACTIVE MATRIX ORGANIC LIGHT-EMITTING DISPLAY AND DISPLAY APPARATUS
An AMOLED comprises a plurality of pixel structures arranged in a matrix and one layer of power supply signal electrode configured to provide a power supply...
2016/0181347 DISPLAY PANEL, DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY PANEL
A display panel, a display device and a manufacturing method of the display panel. The display panel includes a display area and a non-display area, the...
2016/0181346 Flexible Display Device with Gate-In-Panel Circuit
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
2016/0181345 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE WITH FLEXIBLE PRINTED CIRCUIT FILM
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
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