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Patent # Description
2016/0190270 ACTIVE DEVICE AND HIGH VOLTAGE-SEMICONDUCTOR DEVICE WITH THE SAME
A high voltage (HV) semiconductor device is provided, comprising a substrate, a first well having a first conductive type and extending down from a surface of...
2016/0190269 TAPERED GATE OXIDE IN LDMOS DEVICES
Approaches for LDMOS devices are provided. A method of forming a semiconductor structure includes forming a gate dielectric including a first portion having a...
2016/0190268 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure also includes a first...
2016/0190267 ALL AROUND CONTACT DEVICE AND METHOD OF MAKING THE SAME
A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region...
2016/0190266 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a first capacitive insulating film, a semiconductor region, a gate insulating film, and a gate electrode. The semiconductor...
2016/0190265 SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE
A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region....
2016/0190264 TRENCH POWER MOSFET AND MANUFACTURING METHOD THEREOF
A trench power MOSFET and a manufacturing method thereof are provided. The gate of the trench power MOSFET includes an upper doped region, a lower doped region...
2016/0190263 DEVICES FORMED BY PERFORMING A COMMON ETCH PATTERNING PROCESS TO FORM GATE AND SOURCE/DRAIN CONTACT OPENINGS
A device includes an isolation region that defines an active region in a semiconducting substrate and a gate structure, wherein the gate structure has an axial...
2016/0190262 CONFINED EARLY EPITAXY WITH LOCAL INTERCONNECT CAPABILITY
A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate and surrounded at a...
2016/0190261 SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device capable of effectively increasing a threshold voltage and a method for manufacturing the silicon carbide semiconductor...
2016/0190260 DOPED ZINC OXIDE AS N+ LAYER FOR SEMICONDUCTOR DEVICES
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type layer is formed on or in the...
2016/0190259 EPITAXIAL STRUCTURE AND GROWTH THEREOF
The invention provides an epitaxial growth structure and a growth method thereof. The epitaxial growth structure comprises a substrate, a plurality of seeds, a...
2016/0190258 LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND PACKAGE THEREOF
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and...
2016/0190257 GRAPHENE OPTOELECTRONIC DETECTOR AND METHOD FOR DETECTING PHOTONIC AND ELECTROMAGNETIC ENERGY BY USING THE SAME
A graphene optoelectronic detector is disclosed, which comprises: an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on...
2016/0190256 Semiconductor Device Including a Transistor with a Gate Dielectric Having a Variable Thickness
A semiconductor device includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a...
2016/0190255 METHODS FOR FORMING FinFETS HAVING A CAPPING LAYER FOR REDUCING PUNCH THROUGH LEAKAGE
A method for forming FinFETs having a capping layer for reducing punch through leakage includes providing an intermediate semiconductor structure having a...
2016/0190254 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for...
Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the...
2016/0190253 METHOD AND STRUCTURE OF MAKING ENHANCED UTBB FDSOI DEVICES
An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of...
2016/0190252 FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE METHOD AND DEVICE
A method of forming a source/drain region with abrupt vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a...
2016/0190251 FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION METHOD AND DEVICE
A method of forming a source/drain region with an abrupt, vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a...
2016/0190250 V-Shaped Epitaxially Formed Semiconductor Layer
The present disclosure provides a method in accordance with some embodiments. The method includes forming a recess in a source/drain region of a semiconductor...
2016/0190249 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate...
2016/0190248 TRANSISTOR STRUCTURE WITH REDUCED PARASITIC SIDE WALL CHARACTERISTICS
A MOS transistor structure for matched operation in weak-inversion or sub-threshold range (e.g. input-pair of operational amplifier, comparator, and/or...
2016/0190247 STRESSED NANOWIRE STACK FOR FIELD EFFECT TRANSISTOR
A disposable gate structure is formed over the alternating stack of first semiconductor material portions and second semiconductor material portions. The...
2016/0190246 STRESSED NANOWIRE STACK FOR FIELD EFFECT TRANSISTOR
A disposable gate structure is formed over the alternating stack of first semiconductor material portions and second semiconductor material portions. The...
2016/0190245 METHODS AND SYSTEMS FOR CHEMICALLY ENCODING HIGH-RESOLUTION SHAPES IN SILICON NANOWIRES
Methods of chemically encoding high-resolution shapes in silicon nanowires during metal nanoparticle catalyzed vapor-liquid-solid growth or vapor-solid-solid...
2016/0190244 ELECTRONICS DEVICE HAVING TWO-DIMENSIONAL (2D) MATERIAL LAYER AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE...
An electronic device includes first and second electrodes that are spaced apart from each other and a 2D material layer. The 2D material layer connects the...
2016/0190243 STRUCTURE AND FORMATION METHOD OF FINFET DEVICE
Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a fin...
2016/0190242 Fin Recess Last Process for FinFet Fabrication
A method includes forming isolation regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a hard mask...
2016/0190241 Semiconductor Device Including an Isolation Structure and Method of Manufacturing a Semiconductor Device
An embodiment of a semiconductor device comprises a first load terminal contact area at a first side of a semiconductor body. A second load terminal contact...
2016/0190240 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a...
2016/0190239 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device is provided. The semiconductor device includes a sacrificial layer formed on a substrate, an active layer formed on the sacrificial...
2016/0190238 NON-PLANAR SEMICONDUCTOR DEVICE WITH ASPECT RATIO TRAPPING
As disclosed herein, a semiconductor device with aspect ratio trapping including, a bulk substrate, a plurality of isolation pillars formed on the bulk...
2016/0190237 LATCHUP REDUCTION BY GROWN ORTHOGONAL SUBSTRATES
An integrated circuit is formed by providing a heavily doped substrate of a first conductivity type, forming a lightly doped lower epitaxial layer of the first...
2016/0190236 FINFET AND METHOD OF MANUFACTURING THE SAME
There is provided a method of manufacturing a Fin Field Effect Transistor (FinFET). The method may include: forming a fin on a semiconductor substrate; forming...
2016/0190235 POWER SEMICONDUCTOR DEVICE
A problem associated with n-channel power MOSFETs and the like that the following is caused even by relatively slight fluctuation in various process parameters...
2016/0190234 SEMICONDUCTOR DEVICE
A semiconductor device of the embodiment includes an SiC layer of 4H-SiC structure having a surface inclined at an angle from 0 degree to 30 degrees relative...
2016/0190233 TRANSISTOR WITH WURTZITE CHANNEL
A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is...
2016/0190232 SEMICONDUCTOR DEVICE
A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer,...
2016/0190231 SEMICONDUCTOR SWITCH
According to an embodiment, a semiconductor switch includes a first insulating film on a semiconductor substrate, a first semiconductor layer on the first...
2016/0190230 Unknown
In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a...
2016/0190229 SUBSTRATE RESISTOR WITH OVERLYING GATE STRUCTURE
A resistor device includes a resistor body disposed in a substrate and doped with a first type of dopant, an insulating layer disposed above the resistor body,...
2016/0190228 ORGANIC LIGHT EMITTING DISPLAY DEVICE
Provided is an organic light emitting display device. The organic light emitting display device includes: a plurality of sub-pixels including an anode and a...
2016/0190227 DISPLAY
A capacitor includes an active layer, a gate insulation layer on the active layer, a gate electrode on the gate insulation layer, an interlayer insulating...
2016/0190226 Organic Electro-Luminescent Display Device
An organic EL display device includes an inorganic insulating film including a contact part as an opening where a contact electrode made of a conductive film...
2016/0190225 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display device and a method of manufacturing the same are provided that may reduce the resistance of a second electrode and may...
2016/0190224 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus includes a substrate; an active layer; a gate electrode, source and drain electrodes; a first insulating layer...
2016/0190223 FLEXIBLE DISPLAY
A flexible display is disclosed. In one aspect, the display includes at least one first pattern including a plurality of display elements configured to display...
2016/0190222 ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a pattern of an organic light-emitting...
2016/0190221 THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME
A thin-film transistor (TFT) array substrate includes: a driving TFT provided on a substrate; and a switching TFT provided on the substrate and including: a...
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