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Patent # Description
2016/0190170 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature....
2016/0190169 LTPS TFT Substrate Structure and Method of Forming the Same
A method of forming an LTPS TFT substrate includes: Step 1: providing a substrate (1) and depositing a buffer layer (2); Step 2: depositing an a-Si layer (3);...
2016/0190168 SILICON-GERMANIUM FIN FORMATION
Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base structure including a silicon substrate, an...
2016/0190167 THIN-FILM TRANSISTOR PANEL
Embodiments of the present disclosure provide a thin-film transistor (TFT) panel structured to prevent the deterioration of image quality due to the luminance...
2016/0190166 DISPLAY APPARATUS
A display apparatus includes a substrate having a display area defined in a non rectangular shape, and a non-display area surrounding the display area; an...
2016/0190165 LIQUID CRYSTAL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR
A display device is discussed. The display device includes a substrate having a display area and a pad area in a periphery of the display area, the display...
2016/0190164 THIN FILM TRANSISTOR CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
A thin film transistor (TFT) circuit device comprises a substrate comprising a major surface; a gate line formed over the substrate and extending in a first...
2016/0190163 TFT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
Embodiments of the present disclosure provide a method for manufacturing a TFT array substrate. The method comprises, forming a passivation layer on a...
2016/0190162 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
The present disclosure provides an array substrate and a method of manufacturing the same, and a display device. TA connecting portion is provided within the...
2016/0190161 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
The present disclosure provides an array substrate and a method of manufacturing the same, and a display device comprising the array substrate. The array...
2016/0190160 ARRAY SUBSTRATE FOR DISPLAY DEVICE
The array substrate for display device includes: a substrate; a signal line disposed on the substrate; a first color filter disposed on one side of the signal...
2016/0190159 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE
An array substrate is disclosed. The array substrate includes gate lines and data lines, and first and second signal lines. A first data line is between first...
2016/0190158 ARRAY SUBSTRATE AND DISPLAY PANEL
The disclosure provides an array substrate and a display panel. The array substrate comprises a display region and a non-display region surrounding the display...
2016/0190157 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF
A TFT-LCD pixel structure and a manufacturing method thereof are provided. The TFT-LCD pixel structure includes a gate line, a TFT switch and a pixel electrode...
2016/0190156 METAL ON ELONGATED CONTACTS
An integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, and including...
2016/0190155 ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench,...
2016/0190154 METHODS FOR MAKING A TRIM-RATE TOLERANT SELF-ALIGNED CONTACT VIA STRUCTURE ARRAY
A stack is formed over a substrate, which comprises an alternating plurality of first material layers including a first material and second material layers...
2016/0190153 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate, a plurality of fin structures, a...
2016/0190152 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality...
2016/0190151 3D memory process and structures
Disclosed herein are semiconductor devices and methods for fabricating a semiconductor device. In an embodiment, a method of fabricating a semiconductor device...
2016/0190150 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF
A non-volatile memory includes a substrate, a stacked structure, a channel layer, and a second dielectric layer. The stacked structure includes a first...
2016/0190149 SEMICONDUCTOR DEVICE
At least one of a plurality of transistors which are highly integrated in an element is provided with a back gate without increasing the number of ...
2016/0190148 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
A method for manufacturing a semiconductor device includes providing a substrate, a first conductor, a second conductor, a first dielectric, a second...
2016/0190147 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor memory device includes a substrate, semiconductor pillars, first electrode films, a second electrode film, a first...
2016/0190146 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING MEMORY CELLS AND INTEGRATED CIRCUITS
Integrated circuits and methods fabricating memory cells and integrated circuits are provided. In one embodiment, a method for fabricating a memory cell...
2016/0190145 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes an SOI substrate and an anti-fuse element formed on the SOI substrate. The SOI substrate has a p type well region formed on a...
2016/0190144 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a semiconductor device having improved performance. In a semiconductor substrate located in a memory cell region, a memory cell of a nonvolatile...
2016/0190143 INTERDIGITATED CAPACITOR TO INTEGRATE WITH FLASH MEMORY
Some embodiments relate to an integrated circuit (IC). The IC includes a semiconductor substrate including a flash memory region and a capacitor region. A...
2016/0190142 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode...
2016/0190141 DUAL-PORT SRAM DEVICES AND METHODS OF MANUFACTURING THE SAME
A dual-port SRAM device includes a substrate having a field region and first to fourth active fins extending in a first direction, and a unit cell having first...
2016/0190140 CAPACITOR STRAP CONNECTION STRUCTURE AND FABRICATION METHOD
Structures and methods for deep trench capacitor connections are disclosed. The structure includes a reduced diameter top portion of the capacitor conductor....
2016/0190139 FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating electrode...
2016/0190138 SEMICONDUCTOR DEVICE
Disclosed herein is a semiconductor device including two standard cells which are arranged adjacent to each other in an X direction. One of the two standard...
2016/0190137 FINFET STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
Present disclosure provides a FinFET structure, including a plurality of fins, a gate, and a first dopant layer. The gate is disposed substantially orthogonal...
2016/0190136 ASYMMETRIC SOURCE/DRAIN DEPTHS
A semiconductor device includes a substrate having a first region and a second region, an n-type transistor in the first region, the n-type transistor...
2016/0190135 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate...
2016/0190134 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device comprises forming an interlayer insulating film on a semiconductor substrate, the interlayer insulating film...
2016/0190133 FinFET Contact Structure and Method for Forming the Same
A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion,...
2016/0190132 Super-Self-Aligned Contacts and Method for Making the Same
A number of first hard mask portions are formed on a dielectric layer to vertically shadow a respective one of a number of underlying gate structures. A number...
2016/0190131 SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF
Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a...
2016/0190130 METHOD FOR FORMING SINGLE DIFFUSION BREAKS BETWEEN FINFET DEVICES AND THE RESULTING DEVICES
A method includes forming a fin in a semiconductor substrate. A plurality of sacrificial gate structures are formed above the fin. A selected one of the...
2016/0190129 FinFET with Multiple Dislocation Planes and Method for Forming the Same
A device comprises a first semiconductor fin over a substrate, a second semiconductor fin over the substrate, wherein the first semiconductor fin and the...
2016/0190128 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a fin type active pattern extended in a first direction and disposed on a substrate. A first gate electrode and a second gate...
2016/0190127 HIGH PERFORMANCE POWER CELL FOR RF POWER AMPLIFIER
A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a Schottky MOSFET formed in an N-Well...
2016/0190126 Junction Barrier Schottky Rectifier
A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two...
2016/0190125 Semiconductor Device Having Switchable Regions with Different Transconductances
A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination...
2016/0190124 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region and a first drain region....
2016/0190123 Semiconductor Device with Transistor Cells and Enhancement Cells
A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift...
2016/0190122 Method for FinFET Integrated with Capacitor
A semiconductor structure comprises a semiconductor substrate and a shallow trench isolation (STI) feature over the substrate. The STI feature includes first...
2016/0190121 Method of Producing a Semiconductor Device
A semiconductor body has a drift region layer, a body region layer adjoining the drift region layer, and a source region layer adjoining the body region layer...
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