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Patent # Description
2016/0197168 Semiconductor Device Comprising a Bipolar Transistor
A semiconductor device comprising a bipolar transistor and a method of making the same. The bipolar transistor includes a collector having a laterally...
2016/0197167 Vertical P-Type, N-Type, P-Type (PNP) Junction Integrated Circuit (IC) Structure
Various particular embodiments include an integrated circuit (IC) structure having: a stack region; and a silicon substrate underlying and contacting the stack...
2016/0197166 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal...
2016/0197165 MANUFACTURING METHOD OF THIN FILM TRANSISTOR DISPLAY PANEL
Provided is a manufacturing method of a thin film transistor array panel including: formation of a gate line including a gate electrode on a substrate;...
2016/0197164 Method of Producing a Semiconductor Arrangement
A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of...
2016/0197163 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
A screen oxide film is formed on an n- drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed...
2016/0197162 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING METAL GATE
The present invention provides a method for forming a semiconductor device having a metal gate. The method includes firstly, a substrate is provided, and a...
2016/0197161 SEMICONDUCTOR DEVICE INCLUDING A GATE ELECTRODE ON A PROTRUDING GROUP III-V MATERIAL LAYER AND METHOD OF...
A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate,...
2016/0197160 METHOD OF FORMING SPACERS FOR A GATE OF A TRANSISTOR
The invention describes a method for forming spacers (152a, 152b) of a field effect transistor gate, comprising a step of forming a protection layer (152)...
2016/0197159 GATE ELECTRODE HAVING A CAPPING LAYER
A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer...
2016/0197158 LOW END PARASITIC CAPACITANCE FINFET
Embodiments of the present invention provide methods for fabricating a semiconductor device. One method may include providing a semiconductor substrate with...
2016/0197157 REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION
A method of forming a semiconductor structure includes depositing a gate dielectric layer lining a recess of a gate structure formed on a substrate with a...
2016/0197156 MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating memory device is disclosed. The method includes the steps of: providing a substrate having a tunnel oxide layer on the substrate, a...
2016/0197155 SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE...
A silicon carbide substrate has a silicon carbide epitaxial layer. The silicon carbide epitaxial layer has a first main surface and a second main surface...
2016/0197154 III-V NANOWIRE FET WITH COMPOSITIONALLY-GRADED CHANNEL AND WIDE-BANDGAP CORE
A method for fabricating a III-V nanowire. The method may include providing a semiconductor substrate, which includes an insulator, with a wide-bandgap layer...
2016/0197153 NONVOLATILE MEMORY DEVICES HAVING SINGLE-LAYERED FLOATING GATES
A nonvolatile memory device includes a plurality of twin cells arrayed on a substrate. Each of the plurality of twin cells includes a drain mesa protruding...
2016/0197152 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a...
2016/0197151 METHOD TO MAKE BURIED, HIGHLY CONDUCTIVE P-TYPE III-NITRIDE LAYERS
A conductive, porous gallium-nitride layer can be formed as an active layer in a multilayer structure adjacent to one or more p-type III-nitride layers, which...
2016/0197150 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first...
2016/0197149 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A first electrode being in contact with the first main surface of the silicon carbide semiconductor substrate and in ohmic junction with the silicon carbide...
2016/0197148 ELECTRICAL DEVICES WITH GRAPHENE ON BORON NITRIDE
Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices...
2016/0197147 HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS
Thermal condensation is employed to obtain a finned structure including strained silicon germanium fins having vertical side walls and a germanium content that...
2016/0197146 SUPERLATTICE MATERIALS AND APPLICATIONS
A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered...
2016/0197145 TUNNELLING FIELD EFFECT TRANSISTOR
A tunneling field effect transistor, comprising a gate electrode layer, a gate dielectric layer, a source region, a connected region and a drain region,...
2016/0197144 PERFORMANCE OPTIMIZED GATE STRUCTURES
A performance optimized CMOS FET structure and methods of manufacture are disclosed. The method includes forming source and drain regions for a first type...
2016/0197143 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
A plurality of trenches is provided in a stripe shape extending in a direction parallel to a substrate front surface to a predetermined depth in a depth...
2016/0197142 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A wafer includes a semiconductor layer having a concentration of n-dopants. A first mask is formed on the wafer and has first openings in an active area of a...
2016/0197141 Compensation Devices
Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for...
2016/0197140 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A MOS semiconductor device has a MOS structure, including a p.sup.- region that surrounds an n.sup.+-type source region and has a net doping concentration...
2016/0197139 STABLE AMORPHOUS METAL OXIDE SEMICONDUCTOR
A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating...
2016/0197138 HIGH VOLTAGE METAL-OXIDE-METAL (HV-MOM) DEVICE, HV-MOM LAYOUT AND METHOD OF MAKING THE HV-MOM DEVICE
A high voltage metal-oxide-metal (HV-MOM) layout includes a first conductive element. The first element includes a first leg extending in a first direction, a...
2016/0197137 Integrated Capacitor
A method includes forming first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and...
2016/0197136 SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS FOR MANUFACTURING THE SAME
The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom...
2016/0197135 SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR
An integrated circuit contains a thin film resistor in which a body of the thin film resistor is disposed over a lower dielectric layer in a system of...
2016/0197134 DISPLAY MODULE AND MULTI-DISPLAY DEVICE INCLUDING THE SAME
A display module is provided including a pixel region having a plurality of pixels and a black matrix arranged outside the pixel region. Each of the pixels is...
2016/0197133 ORGANIC MAGNETOELECTROLUMINESCENCE FOR TRANSDUCTION BETWEEN MAGNETIC AND OPTICAL INFORMATION
An optoelectronic device which can read magnetically stored information, and convert it into optical light signals using organic or "plastic" semiconductors is...
2016/0197132 DISPLAY DEVICE
A display device includes: a substrate; a static electricity shielding member formed on the substrate; a scan line formed on the substrate and transferring a...
2016/0197131 TRANSPARENT DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A transparent display device includes a first substrate including a pixel region and a light amount controlling region. An organic light emitting display is...
2016/0197130 DISPLAY DEVICE
A display device including: a first conductive pattern group including: a scan line and a gate electrode spaced from the scan line, a driving semiconductor...
2016/0197129 FLEXIBLE DISPLAY
A flexible display includes: a first flexible substrate; an intermediate barrier layer positioned on the first flexible substrate and comprising silicon oxide;...
2016/0197128 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate includes a substrate (10) and first thin-film...
2016/0197127 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus, including a substrate including a display region and a fan-out region outside the display region; a plurality of...
2016/0197126 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
Disclosed is an organic light emitting diode (OLED) display including an organic light emitting diode (OLED) display including an insulation substrate and a...
2016/0197125 ORGANIC LIGHT EMITTING DISPLAY DEVICE WITH SUBSTANTIALLY POLYGONAL SUB-PIXELS
An organic light emitting display device includes a plurality of sub-pixels arranged in a substantially hexagonally-shaped structure, each of the sub-pixels...
2016/0197124 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display includes a plurality of transmission window areas arranged in a matrix form, a plurality of green pixels arranged in a...
2016/0197123 ORGANIC LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SHADOW MASK THEREFOR
An organic light emitting device including a blue subpixel that is larger than a red subpixel and a green subpixel. The red subpixel and the green subpixel...
2016/0197122 ORGANIC PHOTOELECTRONIC DEVICES AND IMAGE SENSORS INCLUDING THE SAME
Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where...
2016/0197121 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first...
2016/0197120 SEMICONDUCTOR STORAGE DEVICE
A semiconductor storage device includes a cell array including resistance change elements formed above a semiconductor substrate; first cell transistors formed...
2016/0197119 METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING FREE LAYERS THAT ARE COBALT-FREE
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a...
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