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INTEGRATED CIRCUIT COMPRISING PMOS TRANSISTORS WITH DIFFERENT VOLTAGE
There is provided a method for the manufacture of an integrated circuit, including a substrate and an insulating layer formed on the substrate; a first pMOS...
FINFET DEVICE AND FABRICATION METHOD THEREOF
A method for forming a FinFET device is provided. The method includes providing a substrate having a first region and a second region; and forming a plurality...
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with an insulating layer formed thereon. The...
HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING
PROCESS AND PLASMA ETCH PROCESS
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor...
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THROUGH SILICON
A method of making a semiconductor device is provided including forming a first opening and a second opening in a first surface of a substrate. A conductive...
SELF-ALIGNED VIA INTERCONNECT STRUCTURES
A self-aligned via interconnect structures and methods of manufacturing thereof are disclosed. The method includes forming a wiring structure in a dielectric...
Semiconductor Devices and Methods of Manufacture Thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming...
Subtractive Self-Aligned Via and Plug Patterning for Back End of Line
Subtractive self-aligned via and plug patterning for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an...
SEMICONDUCTOR DEVICE WITH REDUCED VIA RESISTANCE
A method of fabricating a semiconductor interconnect structure by providing a semiconductor structure that includes two dielectric layers. The first dielectric...
Device and Method for Stopping an Etching Process
A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method...
METHOD FOR MANUFACTURING BONDED WAFER
A method for manufacturing bonded wafer including: producing bonded wafer having thin-film on its base wafer by an ion implantation delamination method, and...
METHOD OF PRODUCING BONDED WAFER
A method of producing a bonded wafer in which wafers each having a cutout portion are used as a bond wafer and a base wafer, and either or both of settings of...
METHOD FOR LOCATING DEVICES
The disclosure relates to a process for locating devices, the process comprising the following steps: a) providing a carrier substrate comprising: a device...
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a semiconductor structure including a substrate, at least one fin group and a plurality of sub-fin structures disposed on the...
ELECTRICALLY INSULATED FIN STRUCTURE(S) WITH ALTERNATIVE CHANNEL MATERIALS
AND FABRICATION METHODS
Semiconductor structures and fabrication methods are provided which includes, for instance, fabricating a semiconductor fin structure by: providing a fin...
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD OF FABRICATING THE SAME
A method of fabricating a semiconductor device and a semiconductor device formed by the method. The method includes form a stack conductive structure by...
INTERCONNECT STRUCTURES INCORPORATING AIR-GAP SPACERS
A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down...
Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a gas...
SINGLE-WAFER-TYPE CLEANING APPARATUS
A single-wafer-type cleaning apparatus is provided. The single-wafer-type cleaning apparatus is configured to be capable of controlling electrostatic charges...
WAFER HOLDER AND METHOD FOR MANUFACTURING THE SAME
A wafer holder 10 includes a resin adhesive layer 16 between a ceramic electrostatic chuck 12 and a metal cooling plate 14. The adhesive layer 16 includes a...
MICRO DEVICE TRANSFER HEAD ARRAY
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device...
SUBSTRATE CARRIER WITH INTEGRATED ELECTROSTATIC CHUCK
A substrate carrier adapted to use in a processing system includes an electrode assembly and a support base. The electrode assembly is configured to generate...
ADSORPTION DEVICE AND CONTROL METHOD THEREOF
The present invention provides an adsorption device and a control method thereof. The adsorption device includes a loading module, a power supply module, a...
SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING
In one embodiment, a semiconductor manufacturing apparatus includes a wafer setting module on which a wafer is to be set. The apparatus further includes a...
Reticle Transfer System and Method
A fabrication system comprises placing an internal buffer at a default position of a local system, wherein the default position is a first boundary between a...
PACKING STRUCTURE FOR PACKING SUBSTRATE STORING CONTAINER
An upper cushioning material is placed on a substrate storing container in a packing box. The substrate storing container is placed on a lower cushioning...
LAMP DRIVER FOR LOW PRESSURE ENVIRONMENT
Embodiments of the present disclosure relate to a lamp driver for lamps used as a source of heat radiation in a thermal processing chamber. The lamp driver...
CIRCULATION COOLING AND HEATING DEVICE
A circulating cooling/heating device configured to cool and heat a circulating fluid supplied to a chamber in plasma-etching equipment includes: a heat...
METHOD OF FABRICATING SEMICONDUCTOR PACKAGE
A method of fabricating a semiconductor package is provided, including: disposing a plurality of semiconductor elements on a carrier through an adhesive layer...
Baseplate for an electronic module and method of manufacturing the same
Various embodiments provide methods for manufacturing a baseplate for an electronic module and an electronic module comprising a baseplate, wherein the...
EMBEDDED SEMICONDUCTIVE CHIPS IN RECONSTITUTED WAFERS, AND SYSTEMS
A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are...
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for...
BALL GRID ARRAY PACKAGE SUBSTRATE WITH THROUGH HOLES AND METHOD OF FORMING
In accordance with an embodiment, there is provided a substrate of a ball grid array package that includes a first layer including reinforcement fibers. The...
METHOD AND APPARATUS FOR ANISOTROPIC TUNGSTEN ETCHING
Methods for anisotropically etching a tungsten-containing material (such as doped or undoped tungsten metal) include cyclic treatment of tungsten surface with...
ISOTROPIC ATOMIC LAYER ETCH FOR SILICON AND GERMANIUM OXIDES
Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of a...
SEMICONDUCTOR DEVICE WITH NON-LINEAR SURFACE
A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external...
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and...
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to...
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of...
SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the...
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE,
AND RECORDING MEDIUM
A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a...
SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film...
Method for tuning the effective work function of a metal
The disclosed technology generally relates to integrated circuit devices and methods of forming the same, and more particularly to metal electrodes whose...
Method of Providing An Implanted Region In A Semiconductor Structure
According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a...
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Semiconductor devices and methods of manufacturing the semiconductor devices are provided. The semiconductor devices may include a first line pattern that...
REDUCED EXTERNAL RESISTANCE FINFET DEVICE
The present invention relates generally to semiconductor devices, and more particularly, to a structure and method of reducing external resistance within fin...
FABRICATION OF III-V-ON-INSULATOR PLATFORMS FOR SEMICONDUCTOR DEVICES
Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to...
METHOD OF FORMING GATE DIELECTRIC LAYER FOR MOS TRANSISTOR
A method of forming a gate dielectric layer for a MOS transistor includes the following steps. A gate dielectric layer is formed on a substrate. A nitrdation...
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments,...
ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION
Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of NO...