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Patent # Description
2016/0204160 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4.times.n pixels (where, n is a...
2016/0204159 SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel...
2016/0204158 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD OF FORMING THE SAME
The present invention relates to a CMOS image sensor device and a method of forming the same. The CMOS image sensor device includes a substrate, a deep trench...
2016/0204157 BACKLIGHT IMAGE SENSOR CHIP HAVING IMPROVED CHIP DRIVING PERFORMANCE
The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a...
2016/0204156 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor...
2016/0204155 IMAGE SENSOR PACKAGE AND AN IMAGE SENSOR MODULE HAVING THE SAME
Disclosed are an image sensor package and an image sensor module having the same. A diffusion resistor is provided on a circuit board for preventing liquid...
2016/0204154 3DIC Interconnect Apparatus and Method
An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are...
2016/0204153 SOLID-STATE IMAGING APPARATUS, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS
The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can...
2016/0204152 IMAGING DEVICE, IMAGING APPARATUS, PRODUCTION APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE
There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light,...
2016/0204151 SOLID-STATE IMAGING DEVICE AND CAMERA MODULE
A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and a...
2016/0204150 IMAGE SENSOR
Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor...
2016/0204149 Semiconductor Switching Device Separated By Device Isolation
A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the...
2016/0204148 SOLID-STATE IMAGING DEVICE
An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the...
2016/0204147 BACK SURFACE RADIATION TYPE IMAGE SENSOR, IMAGING DEVICE, AND ELECTRONIC APPARATUS
A device including a substrate and an imaging element layer having a plurality of imaging elements is provided, where the imaging element layer is located...
2016/0204146 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device...
2016/0204145 IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING IMAGE PICKUP ELEMENT, AND ELECTRONIC APPARATUS
An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in...
2016/0204144 IMAGE SENSORS AND METHODS OF FORMING THE SAME
An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the...
2016/0204143 IMAGE SENSORS AND METHODS OF FORMING THE SAME
An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in...
2016/0204142 IMAGE SENSORS
An image sensor may include a device isolation structure defining a plurality of pixel regions in a substrate and a photoelectric conversion element formed in...
2016/0204141 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters...
2016/0204140 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
The present disclosure relates to a solid-state imaging element and an electronic device capable of suppressing occurrence of a dark current and acquiring...
2016/0204139 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
A thin film transistor substrate includes: a gate electrode and a first electrode of a capacitor formed above a substrate so as to be arranged along a plane of...
2016/0204138 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
The present invention relates to a thin film transistor array substrate and a method of manufacturing the same. The thin film transistor array substrate may...
2016/0204137 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent...
2016/0204136 TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME
A transistor and a liquid crystal display device having the same are provided. The transistor includes a first gate electrode disposed on a base substrate; a...
2016/0204135 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate line disposed on a substrate and including a...
2016/0204134 An Array Substrate Manufacturing Method, An Array Substrate And A Display Panel
The present invention discloses an array substrate manufacturing method, an array substrate and a display panel, and the method comprises: forming a gate...
2016/0204133 SUBSTRATE FOR CURVED DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Disclosed is a substrate for a curved display device, including: an alkali-free glass substrate that does not contain an alkali metal oxide; and an inorganic...
2016/0204132 FINFET WITH REDUCED CAPACITANCE
A structure including a gate electrode above and perpendicular to a plurality of semiconductor fins, a pair of spacers disposed on opposing sides of the gate...
2016/0204131 STRAIN RELEASE IN PFET REGIONS
A method for fabricating a semiconductor device, includes providing a strained silicon on insulator (SSOI) structure, the SSOI structure comprises, a...
2016/0204130 Flat Panel Display Device with Oxide Thin Film Transistor and Method of Fabricating the Same
A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer...
2016/0204129 FDSOI - CAPACITOR
A method of manufacturing a semiconductor device including a capacitor structure is provided, including the steps of providing an SOI wafer comprising a...
2016/0204128 COINTEGRATION OF BULK AND SOI SEMICONDUCTOR DEVICES
A method of forming a semiconductor device structure includes providing a substrate with a semiconductor-on-insulator (SOI) configuration, the SOI substrate...
2016/0204127 METHOD OF MANUFACTURING COMPONENTS OF DISPLAY PANEL ASSEMBLY FROM SAME MOTHER SUBSTRATE
A method of manufacturing a display panel assembly includes: preparing a mother substrate on which are defined first regions and dummy regions respectively...
2016/0204126 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME
A TFT substrate includes: a substrate; a gate electrode above the substrate; an oxide semiconductor layer above the substrate; a gate insulating film between...
2016/0204125 THIN FILM TRANSISTOR ARRAY PANEL
A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the...
2016/0204124 DISPLAY PANEL
A display panel is provided. The display panel includes a substrate including a non-display region containing a thin film transistor, which includes a...
2016/0204123 Method of fabricating three-dimensional semiconductor devices, and three-dimensional semiconductor devices thereof
Present example embodiments relate generally to semiconductor devices and methods of fabricating a semiconductor device comprising providing a substrate and...
2016/0204122 THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL SELECT GATE TRANSISTORS HAVING DIFFERENT CHARACTERISTICS AND...
A stack of material layers includes first material layers, second material layers located between a respective pair of an overlying first material layer and an...
2016/0204121 SONOS DEVICE
A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich...
2016/0204120 COMPLIMENTARY SONOS INTEGRATION INTO CMOS FLOW
Methods of integrating complementary SONOS devices into a CMOS process flow are described. In one embodiment, the method begins with depositing a hardmask (HM)...
2016/0204119 SEMICONDUCTOR DEVICE
A semiconductor device may include: a plurality of source-side half channels positioned in a first region and arranged in first to 2Nth rows, wherein N is an...
2016/0204118 TECHNIQUES TO AVOID OR LIMIT IMPLANT PUNCH THROUGH IN SPLIT GATE FLASH MEMORY DEVICES
Some embodiments of the present disclosure relate to a flash memory device. The flash memory device includes first and second individual source/drain (S/D)...
2016/0204117 VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK ETCHING AND SELF-ALIGNED LANDING PAD
Alignment between memory openings through multiple tier structures can be facilitated employing a temporary landing pad. The temporary landing pad can have a...
2016/0204116 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
The performances of a semiconductor device are improved. In a method for manufacturing a semiconductor device, in a memory cell region, a control gate...
2016/0204115 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings,...
2016/0204114 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second well regions having a first conductivity type, and a third well region between the first and second well...
2016/0204113 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
A semiconductor device may include a first inverter, a second inverter, a first access transistor, and a second access transistor. A drain electrode of the...
2016/0204112 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A method of fabricating a semiconductor device having a first region, a second region, and a third region between the first and second regions includes forming...
2016/0204111 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
Vertical memory devices, and methods of manufacturing the same, include providing a substrate including a cell array region and a peripheral circuit region,...
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