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Patent # Description
2016/0204010 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
To protect a plurality of semiconductor chips of a sawn wafer housed in a shipping case. A method of manufacturing a semiconductor device includes a step of ...
2016/0204009 METHODS AND SYSTEMS TO IMPROVE PEDESTAL TEMPERATURE CONTROL
A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured...
2016/0204008 SUBSTRATE TREATMENT DEVICE
The invention relates to a device and to a method for treating substrates, comprising a heating apparatus having a plurality of zone heating apparatuses and...
2016/0204007 System, Method and Apparatus for Generating Pressure Pulses in Small Volume Confined Process Reactor
A method for modulating a pressure in a plasma processing volume of a chamber during a plasma processing operation is disclosed. The plasma processing volume...
2016/0204006 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
This substrate processing method includes: a substrate rotating step of rotating a substrate around a predetermined vertical axis line at a first rotation...
2016/0204005 SUPPORT ASSEMBLY FOR SUBSTRATE BACKSIDE DISCOLORATION CONTROL
A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a support shaft assembly. The support...
2016/0204004 WAFER-SCALE PACKAGE INCLUDING POWER SOURCE
A medical device includes a first substrate, a second substrate, a control module, and an energy storage device. The first substrate includes at least one of a...
2016/0204003 METHOD OF FORMING ASPER-SILVER ON A LEAD FRAME
A method for plating a lead frame comprises the steps of plating the lead frame with at least one plating layer including silver and forming an asper-silver...
2016/0204002 Self-Aligned Via and Plug Patterning for Back End of Line (BEOL) Interconnects
Self-aligned via and plug patterning for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit...
2016/0204001 METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant...
2016/0204000 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device in accordance with the present invention includes the steps of preparing a semiconductor substrate, placing...
2016/0203999 SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS
Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer...
2016/0203998 ETCHING METHOD
Provided is a method of etching an etching target layer of a workpiece. The method includes forming a self-assemblable block copolymer layer containing a first...
2016/0203997 SUBSTRATE PROCESSING METHOD
A substrate processing method includes forming a first film on the upper surface of the substrate and supplying a first removal liquid to a peripheral edge of...
2016/0203996 SUBSTRATE MANUFACTURING METHOD AND SUBSTRATE MANUFACTURING APPARATUS
Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a...
2016/0203995 INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) AND ALE (ATOMIC LAYER ETCH)
Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve...
2016/0203994 POLISHING COMPOSITION
A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The...
2016/0203993 Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device...
A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be...
2016/0203992 METHODS OF FORMING SEMICONDUCTOR DEVICES USING AUXILIARY LAYERS FOR TRIMMING MARGIN
A method of fabricating a semiconductor device includes forming a linear preliminary mask pattern in a first direction on a substrate. The preliminary mask...
2016/0203991 Mechanisms for Forming Patterns Using Multiple Lithography Processes
A method for forming patterns in a semiconductor device includes providing a substrate and a patterning-target layer formed over the substrate; forming a first...
2016/0203990 INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION
The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a...
2016/0203989 LOCAL DRY ETCHING APPARATUS AND LOCAL DRY ETCHING FABRICATION METHOD
A local dry etching apparatus includes a vacuum chamber, a single workpiece table, a plurality of discharge tubes, a raw material gas supply device for...
2016/0203988 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
The present disclosure provides semiconductor devices and fabrication methods thereof. A work function layer is formed on the semiconductor substrate. A buffer...
2016/0203987 ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes...
2016/0203986 ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes...
2016/0203985 ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes...
2016/0203984 METHOD FOR FORMING SEMICONDUCTOR DEVICE INCLUDING SPACERS HAVING DIFFERENT DIMENSIONS
The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A...
2016/0203983 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In a method of manufacturing a semiconductor device, sacrificial layer patterns extending in a first direction are formed on an etch target layer. Preliminary...
2016/0203982 METHOD OF FORMING TRENCHES
The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer...
2016/0203981 SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS
Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10...
2016/0203980 Device Isolation for III-V Substrates
Techniques for device isolation for III-V semiconductor substrates are provided. In one aspect, a method of fabricating a III-V semiconductor device is...
2016/0203979 Metal Deposition on Substrates
Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more...
2016/0203978 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device, includes: supplying a first precursor and a first nitriding agent onto a substrate having a surface formed...
2016/0203977 Semiconductor Arrangement Including Buried Anodic Oxide and Manufacturing Method
In accordance with a method of manufacturing a semiconductor arrangement, a first trench is formed into a semiconductor body from a first side. An anodic oxide...
2016/0203976 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a...
2016/0203975 METHODS FOR DEPOSITING FILMS WITH ORGANOAMINODISILANE PRECURSORS
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001## ...
2016/0203974 SULFUR-CONTAINING THIN FILMS
In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in...
2016/0203973 METHOD FOR THE SURFACE TREATMENT OF A SEMICONDUCTOR SUBSTRATE
To apply an anti-wetting coating to a substrate of a semiconductor material, a method includes applying to a support a solution of a hydrocarbon comprising at...
2016/0203972 METHOD AND APPARATUS FOR FORMING DEVICE QUALITY GALLIUM NITRIDE LAYERS ON SILICON SUBSTRATES
Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400.degree. C. The substrate and film materials...
2016/0203971 GATE STACK MATERIALS FOR SEMICONDUCTOR APPLICATIONS FOR LITHOGRAPHIC OVERLAY IMPROVEMENT
Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate....
2016/0203970 HALOGEN LAMP
In a halogen lamp the middle portion of filament can be supported by support rods so as not to sag under its own weight, and the support rods are not deformed...
2016/0203969 Ion Separation and Storage System
Ions provided from an ion source are separated ions into a plurality of different ion groups according to at least one ion property. At least some of the...
2016/0203968 PROBE DISPLACEMENT MEASURING APPARATUS, IONIZATION APPARATUS INCLUDING THE SAME, AND MASS SPECTROMETRY APPARATUS
A probe displacement measuring apparatus includes a cantilever probe, a light irradiation unit configured to irradiate the probe with light, a light receiving...
2016/0203967 ION MODIFICATION
An ion mobility spectrometer comprising an ioniser for ionising a sample; a detector separated from the ioniser by a drift chamber along which ions can travel...
2016/0203966 REMOTE LASER ABLATION ELECTROSPRAY IONIZATION MASS SPECTROMETRY
In various embodiments, a device may generally comprise a remote ablation chamber comprising an inlet and an outlet, a laser to deposit energy into a sample in...
2016/0203965 Surface Extraction Interface
Surface extraction interface systems can include a seal assembly with a cavity assembly, an actuator, and a force gauge. Methods of preparing a sample for...
2016/0203964 Mass Spectrometer
The present disclosure provides a mass spectrometer for performing an analysis of sample ions, and a method for operating a mass spectrometer. The mass...
2016/0203963 Mass Correction
Disclosed is a method of mass spectrometry comprising the steps of: providing a library of matrix data, said matrix data comprising one or more...
2016/0203962 HIGH DUTY CYCLE ION SPECTROMETER
An ion spectrometer is provided, comprising: an ion source, arranged to generate ions continuously with a first range of mass to charge ratios; and an ion...
2016/0203961 MAGNETRON SPUTTERING APPARATUS
A magnetron sputtering apparatus includes a vacuum chamber, a cathode target that rotates on the outer side of a backing plate in the vacuum chamber, a...
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