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| Patent # | Description |
|---|---|
| 2016/0211425 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND OPTICAL FILM A semiconductor light emitting device, which can endure a dicing step for singulation, is superior in resistance to a high/low thermal cycle, and exhibits a... |
| 2016/0211424 |
BLUE LIGHT-EMITTING PHOSPHOR AND LIGHT EMITTING DEVICE USING SAME A blue light-emitting Eu-activated silicate phosphor having a constitutional formula of Sr.sub.3MgSi.sub.2O.sub.8 which contains Eu in an amount of 0.001 to... |
| 2016/0211423 |
WAVELENGTH CONVERTERS, INCLUDING POLARIZATION-ENHANCED CARRIER CAPTURE
CONVERTERS, FOR SOLID STATE LIGHTING... Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are... |
| 2016/0211422 |
SEMICONDUCTOR LIGHT EMITTING DEVICE A semiconductor light emitting device comprises a supporting substrate that has light reflecting characteristics; a wavelength conversion layer that is... |
| 2016/0211421 |
OPTOELECTRONIC DEVICE An optoelectronic device includes a carrier, a housing, and a radiation source that emits electromagnetic radiation arranged on the carrier, wherein the... |
| 2016/0211420 |
HIGH EFFICIENCY LEDS AND METHODS OF MANUFACTURING Simplified LED chip architectures or chip builds are disclosed that can result in simpler manufacturing processes using fewer steps. The LED structure can have... |
| 2016/0211419 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME A light emitting device includes a first semiconductor layer of a first conductivity type having an upper and lower surface sides. A first portion of the first... |
| 2016/0211418 |
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE The present invention provides a method for producing a semiconductor device exhibiting the improved emission efficiency by reducing a strain between a... |
| 2016/0211417 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD OF
MANUFACTURING SEMICONDUCTOR... A semiconductor light-emitting element includes a stacked body having a first semiconductor layer of a first conductivity type, a second semiconductor layer of... |
| 2016/0211416 |
LED DIE An LED die includes a base, and an N-typed semiconductor layer, an active layer and a P-typed semiconductor layer formed on the base that order. The LED die... |
| 2016/0211415 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is... |
| 2016/0211414 |
LIGHT-EMITTING ELEMENT HAVING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface... |
| 2016/0211413 |
METHOD OF FABRICATING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE
MANUFACTURED THEREBY Disclosed are a method of fabricating a light emitting diode and a light emitting diode fabricated by the same. In the method of fabricating a light emitting... |
| 2016/0211412 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active... |
| 2016/0211411 |
HIGH EFFICIENCY ULTRAVIOLET LIGHT EMITTING DIODE WITH BAND STRUCTURE
POTENTIAL FLUCTUATIONS A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the... |
| 2016/0211410 |
WAFER LEVEL LIGHT-EMITTING DIODE ARRAY A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor... |
| 2016/0211409 |
QUANTUM DOT HAVING CORE-SHELL STRUCTURE A quantum dot having core-shell structure includes a core formed of ZnO.sub.zS.sub.1-z, and at least one shell covering the core, and formed of... |
| 2016/0211408 |
SEMICONDUCTOR LIGHT EMITTING DEVICE According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, an electrode pad, a first electrode, a second electrode and... |
| 2016/0211407 |
MANUFACTURING METHOD OF LED CARRIER An LED carrier includes a substrate, a metallic layer, an insulating layer, and a reflecting layer. The metallic layer is disposed on the substrate and has a... |
| 2016/0211406 |
Nanowire LED Structure and Method for Manufacturing the Same A method for ablating a first area of a light emitting diode (LED) device which includes an array of nanowires on a support with a laser is provided. The laser... |
| 2016/0211405 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE A method includes the steps of: forming a plurality of recessed portions in an insulating film formed above a wafer including a first region and a second... |
| 2016/0211404 |
METHOD FOR PREPARING A RECRYSTALLISED SILICON SUBSTRATE WITH LARGE
CRYSTALLITES A method for preparing silicon substrate having average crystallite size greater than or equal to 20 .mu.m, including at least the steps of: (i) providing... |
| 2016/0211403 |
METHOD FOR MANUFACTURING SOLAR CELL A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at... |
| 2016/0211402 |
PHOTODETECTOR Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second... |
| 2016/0211401 |
MONOLITHIC MULTIPLE SOLAR CELLS A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention... |
| 2016/0211400 |
MONOLITHIC MULTIPLE SOLAR CELLS A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention... |
| 2016/0211399 |
SOLAR BATTERY, METHOD FOR MANUFACTURING SOLAR BATTERY, METHOD FOR
MANUFACTURING SOLAR CELL MODULE, AND SOLAR... The present invention provides a solar battery including a solar cell (100); a wiring substrate (200) having a wire (109, 110) to be electrically connected to... |
| 2016/0211398 |
ENTIRE SOLAR SPECTRUM MULTIPLYING CONVERTING PLATFORM UNIT FOR AN OPTIMAL
LIGHT TO ELECTRICITY CONVERSION The invention relates to a high yield multistage light-to-electricity multiplying platform unit which is provided on its front face with a protection... |
| 2016/0211397 |
BACKLIT DISPLAY DEVICE WITH INTEGRATED PHOTOVOLTAIC CELLS Process for manufacturing a photovoltaic module placed on an emissive display device, said photovoltaic module comprising an array containing a plurality of... |
| 2016/0211396 |
SEMITRANSPARENT PHOTOVOLTAIC MODULE AND CORRESPONDING MANUFACTURING
PROCESS The invention relates to a photovoltaic module comprising a plurality of photovoltaic cells in a structure made up of thin films, comprising the following... |
| 2016/0211395 |
METHOD FOR LASER-STRUCTURING THIN LAYERS ON A SUBSTRATE IN ORDER TO
PRODUCE MONOLITHICALLY CONNECTED THIN-LAYER... The invention relates to a method for laser-structuring thin layers on a substrate in order to produce monolithically connected thin-layer solar cells, having... |
| 2016/0211394 |
NANO WIRE ARRAY BASED SOLAR ENERGY HARVESTING DEVICE A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate,... |
| 2016/0211393 |
Tunnel Diode With Broken-Gap Quantum Well A broken-gap tunnel junction device comprising a thin quantum well (QW) layer situated at the interface between adjacent highly doped n-type and p-type... |
| 2016/0211392 |
AIR STABLE INFRARED PHOTODETECTORS FROM SOLUTION-PROCESSED INORGANIC
SEMICONDUCTORS A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal... |
| 2016/0211391 |
SEMICONDUCTING COMPONENT This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a... |
| 2016/0211390 |
Optical Sensor with Light-Guiding Feature and Method for Preparing the
Same An optical sensor includes a semiconductive layer having an electrical circuit area and an optical sensing area, a sample-holding portion over the optical... |
| 2016/0211389 |
COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING
PASSIVATION LAYER, METHOD OF... A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR.sup.1).sub.m. In Formula (I), M includes at... |
| 2016/0211388 |
PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME A photoelectric conversion device capable of preventing anomalous transmission of light of a wavelength that is not supposed to be transmitted and reducing the... |
| 2016/0211387 |
SCHOTTKY STRUCTURE EMPLOYING CENTRAL IMPLANTS BETWEEN JUNCTION BARRIER
ELEMENTS The present disclosure relates to a Schottky diode having a drift layer and a Schottky layer. The drift layer is predominantly doped with a doping material of... |
| 2016/0211386 |
OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide... |
| 2016/0211385 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma... |
| 2016/0211384 |
OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM
TRANSISTOR AND DISPLAY DEVICE In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn,... |
| 2016/0211383 |
PLANARISATION LAYERS A device, comprising: an unplanarised plastic substrate; an electrically and/or optically functional layer formed on the unplanarised substrate; a ... |
| 2016/0211382 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain... |
| 2016/0211381 |
SWITCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SYSTEM A switch circuit that can control an electrical connection state without additionally providing a control circuit is provided. The switch circuit includes a... |
| 2016/0211380 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor... |
| 2016/0211379 |
SEMICONDUCTOR DEVICE HAVING ASYMMETRIC FIN-SHAPED PATTERN Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film... |
| 2016/0211378 |
SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND MEMORY SYSTEM
INCLUDING THE SEMICONDUCTOR DEVICE Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device... |
| 2016/0211377 |
FINFET WITH DIELECTRIC ISOLATED CHANNEL Embodiments of the present invention provide a fin type field effect transistor (FinFET) and methods of fabrication. A punchthrough stopper region is formed on... |
| 2016/0211376 |
METHOD TO FORM LOCALIZED RELAXED SUBSTRATE BY USING CONDENSATION Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a... |
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