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Patent # Description
2016/0211175 METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE
A method for fabricating semiconductor structure is provided. A substrate having a plurality of blocks is provided. Each of the blocks includes a first region...
2016/0211174 ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT
A method of forming a dual damascene metal interconnect for a semiconductor device. The method includes forming a layer of low-k dielectric, forming vias...
2016/0211173 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The method of manufacturing a semiconductor device, including preparing a semiconductor substrate, forming a first insulating layer over said semiconductor...
2016/0211172 INTEGRATED METAL SPACER AND AIR GAP INTERCONNECT
Embodiments described herein relate to methods for forming an air gap interconnect. A metal spacer layer is conformally deposited on a substrate having mandrel...
2016/0211171 METHOD TO PROTECT AGAINST CONTACT RELATED SHORTS ON UTBB
Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on...
2016/0211170 FABRICATION OF III-V-ON-INSULATOR PLATFORMS FOR SEMICONDUCTOR DEVICES
Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to...
2016/0211169 Rotated STI Diode on FinFET Technology
A diode includes a first plurality of combo fins having lengthwise directions parallel to a first direction, wherein the first plurality of combo fins...
2016/0211168 Semiconductor Devices Including Active Patterns Having Different Pitches and Methods of Fabricating the Same
Methods for fabricating semiconductor devices are provided including sequentially stacking hardmask layers, a first sacrificial layer, and a second sacrificial...
2016/0211167 SEMICONDUCTOR STRUCTURE WITH AIRGAP
A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a...
2016/0211166 MOVEABLE EDGE COUPLING RING FOR EDGE PROCESS CONTROL DURING SEMICONDUCTOR WAFER PROCESSING
A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a...
2016/0211165 MOVEABLE EDGE COUPLING RING FOR EDGE PROCESS CONTROL DURING SEMICONDUCTOR WAFER PROCESSING
A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to...
2016/0211164 APPARATUS, IN PARTICULAR END EFFECTOR
An apparatus, in particular end effector, for receiving, transporting and/or positioning a wafer frame which is covered by a carrier film for carrying a wafer,...
2016/0211163 SHEET FOR SEMICONDUCTOR PROCESSING
A semiconductor processing sheet, the sheet comprising a base material and a pressure sensitive adhesive layer laminated on at least one surface of the base...
2016/0211162 SUBSTRATE CARRIER WITH INTEGRATED ELECTROSTATIC CHUCK
A substrate carrier adapted to use in a processing system includes an electrode assembly and a support base. The electrode assembly is configured to generate...
2016/0211161 CONSTRAINED DIE ADHESION CURE PROCESS
A clamping apparatus applies a force to a workpiece during processing. The clamping apparatus includes a base defining a work area configured to receive a...
2016/0211160 INDUSTRIAL ROBOT
An industrial robot may include a first hand and a second hand, each of which is provided with a first hand portion including a substrate-mounting portion and...
2016/0211159 STOPPER FOR SUBSTRATE CASSETTE AND SUBSTRATE CASSETTE ASSEMBLY
The present invention provides a stopper for a substrate cassette and a substrate cassette assembly, belonging to the technical field of manufacturing of...
2016/0211158 Tank switch and method of monitoring a fluid rate
A tank switch for a semiconductor test system is provided, wherein the tank switch comprises a manifold comprising a first input pipe, a second input pipe, an...
2016/0211157 MAINTENANCE METHOD OF SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE...
A maintenance method of a substrate processing apparatus includes a first processing step of carrying a first substrate holder holding a substrate into a...
2016/0211156 ION BEAM ETCHING SYSTEM
The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed...
2016/0211155 CONTROL OF WAFER SURFACE CHARGE DURING CMP
CMP selectivity, removal rate, and uniformity are controlled both locally and globally by altering electric charge at the wafer surface. Surface charge...
2016/0211154 DEVICE AND METHOD FOR CONTINUOUS PRODUCTION OF POROUS SILICON LAYERS
The invention relates to a device and a method for continuous production of porous silicon layers (single or multiple layers) on workpieces made of silicon or...
2016/0211153 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an...
2016/0211152 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
An object of the present invention is to improve the reliability and productivity of a semiconductor device by suppressing generation of a resin burr in a...
2016/0211151 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Etching having high selectivity is performed within a plane of a substrate. To this end, a substrate processing apparatus includes a substrate support where a...
2016/0211150 ETCHING METHOD
An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma...
2016/0211149 ETCHING METHOD
There is provided a method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma...
2016/0211148 ETCHING METHOD
An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride. The target object...
2016/0211147 METHOD OF PLASMA-ENHANCED ATOMIC LAYER ETCHING
A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into...
2016/0211146 SEMICONDUCTOR MANUFACTURING DEVICE, MANAGEMENT METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Manufacturing yield of semiconductor device is improved by suppressing generation of foreign objects in a high-density plasma processing device. A high-density...
2016/0211145 METHOD FOR ETCHING GROUP III-V SEMICONDUCTOR AND APPARATUS FOR ETCHING THE SAME
Disclosed is a method for etching a group III-V semiconductor, including irradiating, under an atmosphere of an organic gas, neutral particles to a group III-V...
2016/0211144 EPITAXIAL PROCESS APPLYING LIGHT ILLUMINATION
An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are...
2016/0211143 CURABLE COMPOSITION FOR OPTICAL IMPRINTING AND PATTERN FORMING METHOD
A curable composition for optical imprinting which is excellent in ink jet adequacy and releasability, a pattern forming method, a fine pattern, and a method...
2016/0211142 HARD MASK COMPOSITION FOR SPIN-COATING
Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for...
2016/0211141 METHOD AND APPARATUS FOR DEPOSITING AMORPHOUS SILICON FILM
Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate...
2016/0211140 Method for Processing a Semiconductor Surface
A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting...
2016/0211139 CONTACT PROCESS AND CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE
A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A...
2016/0211138 FinFET Structure with Different Fin Heights and Method for Forming the Same
A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions,...
2016/0211137 SILICON IMPLANTATION IN SUBSTRATES AND PROVISION OF SILICON PRECURSOR COMPOSITIONS THEREFOR
Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions...
2016/0211136 METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON THIN SILICON CARBIDE ON INSULATOR (SICOI) ...
A method for providing a semi conductor structure includes: providing a structure having: layer comprising silicon, such as a layer of silicon or silicon...
2016/0211135 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND...
There is provided a technique including: (a) forming a thin film containing a predetermined element, oxygen and carbon on a substrate by performing a cycle a...
2016/0211134 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by...
2016/0211133 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by...
2016/0211132 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by...
2016/0211131 ELECTRICAL GAS-DISCHARGE LAMP WITH DISCHARGE-COUPLED ACTIVE ANTENNA
The present invention relates to an electrical gas-discharge lamp comprising an inner bulb (1) arranged within an outer bulb (2), said inner bulb (1) being...
2016/0211130 ELECTRODE FOR A SHORT-ARC HIGH PRESSURE LAMP
An electrode for a short-arc high-pressure discharge device is disclosed. The electrode includes a body made from a thoriated tungsten material. The body forms...
2016/0211129 MASS SPECTROMETER ELECTRODE
A monolithic electrode includes a first portion devoid of apertures and a second portion surrounded by the first portion, the second portion having a web...
2016/0211128 TRAVELING-WELL ION GUIDES AND RELATED SYSTEMS AND METHODS
An ion guide generates a radio frequency (RF) field to radially confine ions to an ion beam along a guide axis as the ions are transmitted through the ion...
2016/0211127 MULTIPLE OIL-EMISSION MEASURING DEVICE FOR ENGINES
A multiple oil-emission device for hydrocarbon emissions in an exhaust-gas mixture, comprising an exhaust-gas probe, which has a transfer capillary, and a...
2016/0211126 MASS SPECTROMETRY USING LASERSPRAY IONIZATION
Disclosed herein are systems and methods for mass spectrometry using laserspray ionization (LSI). LSI can create multiply-charged ions at atmospheric pressure...
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