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Patent # Description
2016/0218228 PHOTOVOLTAIC AND DIRECT THERMAL APPARATUS AND METHODS
Apparatus and methods related to solar energy are provided. A metallic entity has a photovoltaic material in contact therewith. The metallic entity at least...
2016/0218227 Gate Formation Memory by Planarization
Semiconductor devices and methods of producing the devices are disclosed. The devices are formed by forming a gate structure on a substrate. The gate structure...
2016/0218226 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device...
2016/0218225 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A...
2016/0218224 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according to an embodiment includes a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn),...
2016/0218223 TIN BASED P-TYPE OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR APPLICATIONS
This disclosure provides p-type metal oxide semiconductor thin films that display good thin film transistor (TFT) characteristics. The p-type metal oxide thin...
2016/0218222 FINFET CROSSPOINT FLASH MEMORY
A flash memory device in a dual fin single floating gate configuration is provided. Semiconductor fins are formed on a stack of a back gate conductor layer and...
2016/0218221 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end...
2016/0218220 FABRICATION OF IGZO OXIDE TFT ON HIGH CTE, LOW RETARDATION POLYMER FILMS FOR LDC-TFT APPLICATIONS
The present invention provides a TFT on a polymer substrate and a method for producing the TFT. The TFT is, due to its characteristics, particularly suited for...
2016/0218219 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating...
2016/0218218 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
Semiconductor devices and methods for manufacturing the same are provided. An example semiconductor device may include: a Semiconductor on Insulator (SOI)...
2016/0218217 SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURE WITH TWO CHANNEL LAYERS AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a fin structure protruding from a substrate and having a top face and a first side face and a second side face opposite to the...
2016/0218216 Thermally Tuning Strain in Semiconductor Devices
A method includes performing a first epitaxy to grow a silicon germanium layer over a semiconductor substrate, performing a second epitaxy to grow a silicon...
2016/0218215 INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON NFET DEVICE FOR FINFET STRUCTURES
A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a...
2016/0218214 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove...
2016/0218213 SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURVED SIDE-WALL INSULATING FILM AND...
A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region...
2016/0218212 FIELD EFFECT TRANSISTOR ARRANGEMENT
A field effect transistor arrangement having as planar channel layer comprises semiconductor material, the whole surface of the underside of the layer being...
2016/0218211 FABRICATION OF A TRANSISTOR INCLUDING A TUNNELING LAYER
In a particular embodiment, an apparatus includes an electron tunnel structure. The electron tunnel structure includes a tunneling layer, a channel layer, a...
2016/0218210 SEMICONDUCTOR DEVICE
A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked...
2016/0218209 High Voltage Transistor Operable with a High Gate Voltage
A semiconductor device includes a first load contact, a second load contact and a semiconductor region positioned between the first and second load contacts....
2016/0218208 Method for Producing a Substrate, Substrate, Metal-Oxide-Semiconductor Field-Effect Transistor with a...
A method for producing a substrate for a metal-oxide-semiconductor field-effect transistor or a micro-electromechanical system includes dry etching a...
2016/0218207 THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME
A thin film transistor (TFT) and a display device including the same capable of displaying an image having a uniform luminance are provided, the TFT including...
2016/0218206 REDUCING PARASITIC CAPACITANCE AND RESISTANCE IN FINFET
Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. The method can include providing a substrate....
2016/0218205 RF POWER TRANSISTOR
A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain...
2016/0218204 Enhancement Mode High Electron Mobility Transistor and Manufacturing Method Thereof
An enhancement mode high electron mobility transistor according to an embodiment of the present invention includes: a substrate; a channel layer, prepared...
2016/0218203 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device comprises a Group III nitride semiconductor lamination structure including a hetero-junction; an insulating layer formed on the Group...
2016/0218202 BUFFER STACK FOR GROUP IIIA-N DEVICES
A method of fabricating a multi-layer epitaxial buffer layer stack for transistors includes depositing a buffer stack on a substrate. A first voided Group...
2016/0218201 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A compound semiconductor device includes: a substrate; a first barrier layer of a nitride semiconductor formed over the substrate; a well layer of a nitride...
2016/0218200 LATERAL BIPOLAR TRANSISTOR
A bipolar junction transistor comprises a semiconductor layer disposed on an insulating material, at least a portion of the semiconductor layer forming a base...
2016/0218199 SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEREOF
A method for manufacturing a semiconductor device includes forming a fin structure having a top surface and side surfaces. A mask layer is disposed over the...
2016/0218198 ANCHORED STRESS-GENERATING ACTIVE SEMICONDUCTOR REGIONS FOR SEMICONDUCTOR-ON-INSULATOR FINFET
After formation of a gate structure and a gate spacer, portions of an insulator layer underlying a semiconductor fin are etched to physically expose...
2016/0218197 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor. The method of manufacturing a thin film...
2016/0218196 TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IMMUNITY
A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a...
2016/0218195 Method Of Forming Split-Gate Memory Cell Array Along With Low And High Voltage Logic Devices
A method of forming a memory device on a substrate having memory, LV and HV areas, including forming pairs of spaced apart memory stacks in the memory area,...
2016/0218194 BIPOLAR TRANSISTOR, BAND-GAP REFERENCE CIRCUIT AND VIRTUAL GROUND REFERENCE CIRCUIT
The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a...
2016/0218193 SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME
The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active...
2016/0218192 INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON NFET DEVICE FOR FINFET STRUCTURES
A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a...
2016/0218191 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes forming fin-shaped semiconductor layers on a semiconductor substrate. First and second pillar-shaped...
2016/0218190 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes: a semiconductor substrate; and a first trench and a second trench that extend from a front surface of the semiconductor...
2016/0218189 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes: a field effect transistor provided in a semiconductor layer and including a gate electrode, a...
2016/0218188 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A silicon carbide semiconductor device includes a silicon carbide semiconductor layer, a gate insulating film formed on the silicon carbide semiconductor...
2016/0218187 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, POWER CONVERSION DEVICE, THREE-PHASE MOTOR SYSTEM,...
In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an...
2016/0218186 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The silicon carbide semiconductor layer includes a first impurity region, a second impurity region, and a third impurity region. Turning to a first position at...
2016/0218185 LIQUID DOPING MEDIA FOR THE LOCAL DOPING OF SILICON WAFERS
The present invention relates to a novel process for the preparation of printable, low-viscosity oxide media, and to the use thereof in the production of solar...
2016/0218184 Hydrogenated Graphene with Surface Doping and Bandgap Tunability
A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO.sub.2/Si substrate; exposing...
2016/0218183 DIAMOND MULTILAYER STRUCTURE
A diamond multilayer structure comprises: a nitride semiconductor layer that have a first main surface and a second main surface and comprises a nitride...
2016/0218182 SEMICONDUCTOR STRUCTURE IN WHICH FILM INCLUDING GERMANIUM OXIDE IS PROVIDED ON GERMANIUM LAYER, AND METHOD FOR...
A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily...
2016/0218181 Semiconductor Substrate and Semiconductor Device Including the Same
A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on...
2016/0218180 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS
A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on...
2016/0218179 NANOWIRE TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING NANOWIRE TRANSISTOR DEVICE
A nanowire transistor device includes a substrate, a plurality of nanowires formed on the substrate, and a gate surrounding at least a portion of each...
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