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Patent # Description
2016/0218028 Batch Heating and Cooling Chamber or Loadlock
Wafer cassettes and methods of use that provide heating a cooling to a plurality of wafers to decrease time between wafer switching in a processing chamber....
2016/0218027 SINGLE AND DUAL STAGE WAFER CUSHION AND WAFER SEPARATOR
Improvements in a single and dual stage wafer cushion is disclosed where the wafer cushion can use an edge hinge as a single first stage cushion and a second...
2016/0218026 SEMICONDUCTOR MANUFACTURING APPARATUS, DIAGNOSTIC SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD...
A semiconductor manufacturing apparatus capable of stable operation includes a processing chamber where a wafer is treated, a vacuum pump that is coupled with...
2016/0218025 SYSTEMS FOR ADHESIVE BONDING OF ELECTRONIC DEVICES
In accordance with certain embodiments, an apparatus for bonding electronic components such as light-emitting elements each to a connection point on a...
2016/0218024 SUSCEPTOR
A bearing (12) being a recessed section that receives a spindle (20) is provided in a lower surface (10B) of a susceptor (10). The bearing (12) has a tapers...
2016/0218023 CUTTING BLADE HAVING CUTTING EDGE CONTAINING PHOTOCATALYST PARTICLES
A cutting blade for cutting a workpiece is disclosed. The cutting blade includes a base and a cutting edge fixed to a peripheral portion of the base. The...
2016/0218022 SUBSTRATE TREATING APPARATUS AND TREATMENT LIQUID NOZZLE
Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a space for treating a substrate in the interior...
2016/0218021 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to a semiconductor package and method of manufacturing the same. The semiconductor package includes a first die, a plurality of...
2016/0218020 METHOD OF MANUFACTURING FAN OUT WAFER LEVEL PACKAGE
A method of manufacturing a fan out wafer level package comprises: preparing conductive projections on an upper surface of a chip; mounting the chip on a...
2016/0218019 PACKAGE CARRIER, SEMICONDUCTOR PACKAGE, AND PROCESS FOR FABRICATING SAME
A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a...
2016/0218018 VERTICAL GATE SEPARATION
Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten...
2016/0218017 SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having...
2016/0218016 Curing Photo Resist for Improving Etching Selectivity
A method includes exposing and developing a negative photo resist, and performing a treatment on the negative photo resist using an electron beam. After the...
2016/0218015 Dry Etching Method
Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry...
2016/0218014 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a semiconductor substrate. A gate insulation film is formed on the semiconductor substrate. A gate electrode is formed on the...
2016/0218013 PATTERN FORMING METHOD USING RESIST UNDERLAYER FILM
A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method...
2016/0218012 METHOD OF FORMING FINE PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS...
A fine pattern-forming method includes: a core pattern-forming step of forming a core pattern of a predetermined line width at a substrate surface side; a...
2016/0218011 METHOD AND SYSTEM FOR HIGH PRECISION ETCHING OF SUBSTRATES
This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma...
2016/0218010 METHOD OF FORMING MINUTE PATTERNS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
A method includes forming a first etch target layer and a first mask layer on a substrate. Sacrificial patterns extending in a first direction are formed on...
2016/0218009 METHOD FOR PRODUCING PATTERNED METAL NANOWIRES, ELECTRODE USING THE PATTERNED METAL NANOWIRES, AND TRANSISTOR...
The present invention relates to a method of producing patterned silver nanowire, comprising: coating a photosensitive polyamide acid polymer solution on a...
2016/0218008 POWER DEVICE WITH HIGH ASPECT RATIO TRENCH CONTACTS AND SUBMICRON PITCHES BETWEEN TRENCHES
This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The...
2016/0218007 METHOD OF FORMING SEMICONDUCTOR STRUCTURE WITH ANTI-PUNCH THROUGH STRUCTURE
A method for manufacturing a semiconductor structure is provided. The method includes implanting a first type of dopants in a first region and a second region...
2016/0218006 INGAAS FILM GROWN ON SI SUBSTRATE AND METHOD FOR PREPARING THE SAME
The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In.sub.0.4Ga.sub.0.6As buffer layer,...
2016/0218005 METHODS AND SYSTEMS FOR IMPROVED UNIFORMITY OF SiGe THICKNESS
A process is used to form a protective layer to cover a divot between two regions of a semiconductor material. During etching processes, the protective layer...
2016/0218004 METHODS OF GROWING THIN FILMS AT LOW TEMPERATURES USING ELECTRON STIMULATED DESORPTION (ESD)
The invention includes a method of promoting thin film growth on a solid substrate, wherein derivatization of the substrate comprises formation of at least one...
2016/0218003 SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE, AND...
A single-crystal silicon carbide substrate has a main surface having a surface roughness fulfilling Ra .ltoreq.1 nm, and has a ratio of hidden scratches of...
2016/0218002 CONTROLLING THE REFLOW BEHAVIOUR OF BPSG FILMS AND DEVICES MADE THEREOF
A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using...
2016/0218001 SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor manufacturing apparatus according to an embodiment includes a first cleaner and a second cleaner. The first cleaner polishes a semiconductor...
2016/0218000 PLASMA TREATMENT ON METAL-OXIDE TFT
Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the...
2016/0217999 Atomic Layer Deposition Of Films Using Spatially Separated Injector Chamber
Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing...
2016/0217998 METHOD FOR PRODUCING MIRROR-POLISHED WAFER
A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained...
2016/0217997 SUBSTRATE PROCESSING DEVICE, RECORDNG MEDIUM, AND CONTROL METHOD
According to one embodiment, a substrate processing device includes a nozzle that discharges chemical to a circumferential edge portion of a substrate; and a...
2016/0217996 VIBRATION RESISTANT AUTOMOTIVE FRONT LIGHTING LAMP
A lamp for automotive front lighting and a vehicle headlight comprising the lamp are described, as well as a method of manufacturing the lamp. The lamp 10...
2016/0217995 TIME-OF-FLIGHT MASS SPECTROMETER
An embodiment of the invention relates to a TOF-MS capable of performing mass spectrometry of a sample at a high throughput. The TOF-MS has an acceleration...
2016/0217994 Micro-Nozzle Array
The invention relates to a micro-nozzle array comprising a plurality of capillaries comprising a first silica-based material and a second silica-based material...
2016/0217993 APPARATUS AND METHOD FOR SAMPLING OF CONFINED SPACES
In various embodiments of the invention, a cargo container can be monitored at appropriate time intervals to determine that no controlled substances have been...
2016/0217992 Probe Assembly for Attaching a Chromatography Device to a Mass Spectrometer
A probe assembly is disclosed comprising an inlet for receiving an eluent from a chromatography device; an outlet (120) for delivering the eluent to an ion...
2016/0217991 Multiplexed Precursor Isolation for Mass Spectrometry
Systems and methods for multiplexed precursor ion selection are provided. A mass isolator includes a selection region of rods, a transmission region of rods,...
2016/0217990 SYSTEM FOR RECORDING SPATIAL AND TEMPORAL PROPERTIES OF IONS EMITTED FROM A QUADRUPOLE MASS FILTER
An ion detection system for a detecting a quantity of ions exiting from a mass analyzer of a mass spectrometer comprises: (a) photon generating means...
2016/0217989 METHOD OF CONTROLLING A DC POWER SUPPLY
A method of controlling a DC power supply to change a DC offset voltage applied to a component for manipulating charged particles. The method includes, whilst...
2016/0217988 Systems and Methods for Identifying Precursor ions from Product Ions Using Arbitrary Transmission Windowing
Ions are separated from a sample over time and filtered. The precursor ions produced at each step are fragmented. Resulting product ions are analyzed using a...
2016/0217987 Multiplexed Precursor Isolation for Mass Spectrometry
Systems and methods for identifying precursor ions of product ions from combined product ion spectra are provided. N precursor ions are selected. N groups of...
2016/0217986 Peak Assessment for Mass Spectrometers
A method of assessing mass spectral peaks obtained by a mass spectrometer is disclosed. The method comprises: providing experimentally obtained mass spectral...
2016/0217985 TARGETED MASS ANALYSIS
A mass spectrometer comprises: an ion source that generates ions having an initial range of mass-to-charge ratios; an auxiliary ion detector, downstream from...
2016/0217984 CONDUCTIVE TARGET MATERIAL
A conductive target material includes substantially one lithium compound, preferably lithium phosphate, and carbon, as well as typical impurities. A process...
2016/0217983 TANTALUM SPUTTERING TARGET
A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and...
2016/0217982 METHOD AND DEVICE FOR DETECTING A PLASMA IGNITION
Disclosed are a method and an apparatus for the detection of a plasma in a process chamber for the treatment of substrates. In the method, the pressure within...
2016/0217981 SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION
An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be...
2016/0217980 PLASMA PROCESSING APPARATUS
Provided is a plasma processing apparatus including a processing chamber which is disposed in a vacuum vessel and able to be decompressed, a sample stage on a...
2016/0217979 MICROWAVE PLASMA PROCESSING DEVICE
To provide microwave excitation plasma processing device capable of generating wide-width plasma jet having high uniformity, high density, and low temperature...
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