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Patent # Description
2016/0225893 SUPERJUNCTION DEVICE AND SEMICONDUCTOR STRUCTURE COMPRISING THE SAME
The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a...
2016/0225892 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
The present invention makes it possible to improve the accuracy of wet etching and miniaturize a semiconductor device in the case of specifying an active...
2016/0225891 SILICON CARBIDE SEMICONDUCTOR DEVICE
Provided is a silicon carbide semiconductor device that enables integration of a transistor element and a Schottky barrier diode while avoiding the reduction...
2016/0225890 VOLTAGE CONTROLLED SPIN SWITCHES FOR LOW POWER APPLICATIONS
Spin switch devices with voltage controlled magnetism in ultra-low power usage applications are disclosed. The spin switch devices may be configured to provide...
2016/0225889 NITRIDE SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF, DIODE, AND FIELD EFFECT TRANSISTOR
A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a...
2016/0225888 SEMICONDUCTOR DEVICE HAVING PLATED METAL IN ELECTRODE AND PROCESS TO FORM THE SAME
A process to form an electrode of a semiconductor device is disclosed. The process includes steps of: forming the first electrode on the semiconductor layer;...
2016/0225887 CONTROL OF CURRENT COLLAPSE IN THIN PATTERNED GAN
A GaN device is formed on a semiconductor substrate having a plurality of recessed regions formed in a surface thereof. A seed layer, optional buffer layer,...
2016/0225886 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according to an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first...
2016/0225885 HIGH MOBILITY ELECTRON TRANSISTOR
A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound...
2016/0225884 SEMICONDUCTOR COMPONENT WITH A SPACE SAVING EDGE STRUCTURE
A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component...
2016/0225883 ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING THIN FILM TRANSISTOR SUBSTRATE USING OXIDE SEMICONDUCTOR
A method for manufacturing an organic light emitting diode (OLED) display can include forming a gate electrode on a substrate, forming a semiconductor layer by...
2016/0225882 METHOD OF MANUFACTURING ISOLATION STRUCTURE AND NON-VOLATILE MEMORY WITH THE ISOLATION STRUCTURE
A method of manufacturing an isolation structure suitable for a non-volatile memory is provided. A substrate is provided. A dielectric layer, a conductive...
2016/0225881 SILICON GERMANIUM FINFET FORMATION
Methods for fabricating a fin in a fin field effect transistor (FinFET), include exposing a single crystal fin structure coupled to a substrate of the FinFET....
2016/0225880 METHOD FOR FORMING METAL OXIDE SEMICONDUCTOR DEVICE
The present invention provides a method of forming a metal oxide semiconductor (MOS) device comprising a gate structure and an epitaxial structure. The gate...
2016/0225879 MANUFACTURING METHOD OF THIN FILM TRANSISTOR SUBSTRATE
The invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer...
2016/0225878 Method of Forming A Self-Aligned Stack Gate Structure For Use In A Non-volatile Memory Array
A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions,...
2016/0225877 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device may include forming a cavity between two insulating portions that are positioned on a semiconductor...
2016/0225876 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes forming a dummy gate on a substrate, forming a dummy gate mask on the dummy gate, forming a gate spacer...
2016/0225875 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a...
2016/0225874 SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE
There is provided a method of fabricating a semiconductor device, the method including: forming a first semiconductor region at a front surface of a substrate,...
2016/0225873 TRENCHED GATE WITH SIDEWALL AIRGAP SPACER
A method for fabricating a semiconductor device may include receiving a device substrate comprising a channel layer and a source or drain layer, forming a gate...
2016/0225872 SEMICONDUCTOR STRUCTURE WITH A MULTILAYER GATE OXIDE AND METHOD OF FABRICATING THE SAME
A semiconductor structure with a multilayer gate oxide is provided. The structure includes a substrate. A multilayer gate oxide is disposed on the substrate,...
2016/0225871 SEMICONDUCTOR DEVICE WITH TUNABLE WORK FUNCTION
The metal-oxide semiconductor structure includes a substrate, a gate dielectric multi-layer, an etch stop layer, a work function metallic layer, a barrier...
2016/0225870 NON-PLANAR EXCITON TRANSISTOR (BISFET) AND METHODS FOR MAKING
A semiconductor device includes a first gate electrode defined on a base layer. A first plurality of layers is disposed on a first sidewall of the first gate...
2016/0225869 A POWER FIELD EFFECT TRANSISTOR, A POWER FIELD EFFECT TRANSISTOR DEVICE AND A METHOD OF MANUFACTURING A POWER...
A power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistor are provided. During the...
2016/0225868 SEMICONDUCTOR DEVICES HAVING WORK FUNCTION METAL FILMS AND TUNING MATERIALS
A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first...
2016/0225867 SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME
In a semiconductor device, a first active area, a second active area, and a third active area are formed on a substrate. A first gate electrode is formed on...
2016/0225866 MOLYBDENUM-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator...
2016/0225865 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a...
2016/0225864 SEMICONDUCTOR DEVICE AND METHOD
In an embodiment, a semiconductor device includes a High Electron Mobility Transistor (HEMT) including a floating gate. The floating gate includes two or more...
2016/0225863 Semiconductor Device with Multiple Space-Charge Control Electrodes
A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located...
2016/0225862 SEMICONDUCTOR DEVICE
A semiconductor device comprises an element region and a terminal region that surrounds the element region. The semiconductor device includes a first...
2016/0225861 ASPECT RATIO TRAPPING AND LATTICE ENGINEERING FOR III/V SEMICONDUCTORS
A semiconductor structure including a III/V layer on a SiGe layer, edges of the SiGe layer are relaxed, the III/V layer is a semiconductor in a III/V...
2016/0225860 Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical...
A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating...
2016/0225859 METAL OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, DISPLAY APPARATUS, IMAGE SENSOR, AND X-RAY SENSOR
Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal...
2016/0225858 SEMICONDUCTOR DEVICES AND FINFET DEVICES
A fin field effect transistor (FinFET) device includes a substrate and a template material over the substrate. The template material absorbs lattice mismatches...
2016/0225857 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according an embodiment includes a GaN layer, a GaN-based semiconductor layer provided on the GaN layer and having a wider band gap than...
2016/0225856 Composite Wafer Having a SiC-Based Functional Layer
A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer...
2016/0225855 SILICON CARBIDE SEMICONDUCTOR DEVICE
There is provided a silicon carbide semiconductor device allowing for integration of a transistor element and a Schottky barrier diode while avoiding reduction...
2016/0225854 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a silicon carbide substrate, a gate electrode, and a drain electrode. A trench is formed in a second main...
2016/0225853 GRAPHENE GROWTH ON A CARBON-CONTAINING SEMICONDUCTOR LAYER
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as...
2016/0225852 FABRICATING TRANSISTORS HAVING RESURFACED SOURCE/DRAIN REGIONS WITH STRESSED PORTIONS
Methods are providing for fabricating transistors having at least one source region or drain region with a stressed portion. The methods include: forming,...
2016/0225851 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Disclosed is a semiconductor structure, comprising: a semiconductor substrate and multilayer superfine silicon lines, wherein a profile shape of each of the...
2016/0225850 SEMICONDUCTOR STRUCTURE
The present invention provides some methods for forming at least two different nanowire structures with different diameters on one substrate. Since the...
2016/0225849 METHODS OF FABRICATING NANOWIRE STRUCTURES
Methods are presented for fabricating nanowire structures, such as one or more nanowire field effect transistors. The methods include, for instance: providing...
2016/0225848 PROCESS FOR SINGLE DIFFUSION BREAK WITH SIMPLFIED PROCESS
A method of forming a SDB including a protective layer or bilayer and the resulting device are provided. Embodiments include forming a SDB of oxide in a Si...
2016/0225847 SEMICONDUCTOR DEVICE
Provided is a semiconductor device having a superjunction structure formed by a first conduction type column and a second conduction type column, including a...
2016/0225846 INTEGRATION TECHNIQUES FOR MIM OR MIP CAPACITORS WITH FLASH MEMORY AND/OR HIGH-k METAL GATE CMOS TECHNOLOGY
Some embodiments of the present disclosure relate to an integrated circuit (IC) arranged on a semiconductor substrate, which includes a flash region, a...
2016/0225845 SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a...
2016/0225844 CAPACITOR STRUCTURE AND METHOD OF MAKING THE SAME
A structure includes a semiconductor substrate, a conductor-insulator-conductor capacitor. The conductor-insulator-conductor capacitor is disposed on the...
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