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Patent # Description
2016/0225643 METHOD AND NOZZLE FOR HERMETICALLY SEALED PACKAGED DEVICES
Microelectromechanical systems (MEMS) such as digital micromirror devices (DMD) are manufactured in arrays. Covers, packages, and lids are placed around each...
2016/0225642 ELECTRONIC PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF
A method for fabricating an electronic package structure is provided, which includes the steps of: forming a circuit layer on a conductor; disposing an...
2016/0225641 DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH TEMPERATURE ANNEALING
A structure and method for reducing defects within a III-V compound semiconductor layer grown epitaxially on a mismatched crystalline substrate is provided....
2016/0225640 METHOD FOR INCREASING PATTERN DENSITY IN SELF-ALIGNED PATTERNING INTEGRATION SCHEMES
Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme comprising: providing a substrate having a...
2016/0225639 METHOD OF PROCESSING TARGET OBJECT
Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is...
2016/0225638 GRASS REMOVAL IN PATTERNED CAVITY ETCHING
A method of manufacturing a semiconductor device includes providing a first semiconductor substrate having a first main surface and an opposing second main...
2016/0225637 ETCHING METHOD AND STORAGE MEDIUM
An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively...
2016/0225636 METHODS OF FORMING HARDMASK MATERIAL FILM
Methods of forming a hardmask material film are provided. The methods may include preparing a substrate including a first region that includes first patterns...
2016/0225635 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and...
2016/0225634 METHOD FOR QUADRUPLE FREQUENCY FINFETS WITH SINGLE-FIN REMOVAL
A method of single-fin removal for quadruple density fins. A first double density pattern of first sidewall spacers is produced on a semiconductor substrate...
2016/0225633 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
Provided are methods of fabricating a semiconductor device including a field effect transistor. Such methods may include sequentially forming lower and...
2016/0225632 METAL DOPING OF AMORPHOUS CARBON AND SILICON FILMS USED AS HARDMASKS IN SUBSTRATE PROCESSING SYSTEMS
Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate...
2016/0225631 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet...
2016/0225630 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH METAL GATE STACK
A method for forming a semiconductor device structure is provided. The method includes forming a metal gate stack over a semiconductor substrate. The method...
2016/0225629 NITRIDATION ON HDP OXIDE BEFORE HIGH-K DEPOSITION TO PREVENT OXYGEN INGRESS
A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device is disclosed. An oxide layer of the semiconducting device...
2016/0225628 NITRIDATION ON HDP OXIDE BEFORE HIGH-K DEPOSITION TO PREVENT OXYGEN INGRESS
A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device is disclosed. An oxide layer of the semiconducting device...
2016/0225627 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
A semiconductor device manufacturing method includes preparing a wafer having projections formed on a substrate. The projections project upward from a surface...
2016/0225626 METHOD FOR PRODUCING A SEMICONDUCTOR
A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an...
2016/0225625 APPARATUS AND METHOD FOR BONDING SUBSTRATES
A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate...
2016/0225624 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a...
2016/0225623 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Disclosed is a method for manufacturing a semiconductor device. The method includes: a first pattern forming step of forming, on a pattern forming target film,...
2016/0225622 SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECTION SEALS
Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first...
2016/0225621 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
The inventive concepts provide semiconductor devices and methods of fabricating the same. According to the method, sub-stack structures having a predetermined...
2016/0225620 OXIDE AND MANUFACTURING METHOD THEREOF
Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal...
2016/0225619 METHOD AND APPARATUS FOR DEPOSITION OF A III-V SEMICONDUCTOR LAYER
The invention relates to an apparatus for deposition of a III-V semiconductor layer comprising a process chamber (1), a susceptor (2) forming the base of the...
2016/0225618 REDUCING SUBSTRATE BOWING CAUSED BY HIGH PERCENTAGE SIGE LAYERS
The present invention relates generally to semiconductor devices and more particularly, to a structure and method for reducing substrate bowing resulting from...
2016/0225617 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of...
2016/0225616 METHOD AND PRECURSORS FOR MANUFACTURING 3D DEVICES
Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide...
2016/0225615 PRECURSORS FOR SILICON DIOXIDE GAP FILL
A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon...
2016/0225614 STEP COVERAGE DIELECTRIC
Silicon oxide is deposited with improved step coverage by first exposing a patterned substrate to a silicon-containing precursor and then to an ...
2016/0225613 SUBSTRATE TREATMENT DEVICE, PEELING METHOD FOR LAMINATED SUBSTRATE, AND METHOD FOR REMOVING ADHESIVE
The embodiment of a substrate treatment device includes a treatment bath configured to store a treatment liquid in which a treatment object is to be immersed,...
2016/0225612 Bonding Pad Surface Damage Reduction in a Formation of Digital Pattern Generator
A method of fabricating a Digital pattern generator (DPG) device is disclosed. The method includes forming an etch-stop-layer (ESL) over a bonding pad in a...
2016/0225611 COMPOUND FOR ENHANCING GENERATION OF CHEMICAL SPECIES
A reagent that enhances acid generation of a photoacid generator and composition containing such reagent is disclosed.
2016/0225610 System And Method For Photomask Particle Detection
The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also...
2016/0225609 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and...
2016/0225608 PREPARING A SEMICONDUCTOR SURFACE FOR EPITAXIAL DEPOSITION
Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the...
2016/0225607 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle...
2016/0225606 METHOD OF CLEANING AND MICRO-ETCHING SEMICONDUCTOR WAFERS
A method of simultaneously cleaning inorganic and organic contaminants from semiconductor wafers and micro-etching the semiconductor wafers. After the...
2016/0225605 VIBRATION RESISTANT AUTOMOTIVE FRONT LIGHTING LAMP
A lamp for automotive front lighting and a vehicle headlight comprising the lamp are described, as well as a method of manufacturing the lamp. The lamp 10...
2016/0225604 EXCIMER DISCHARGE LAMP
Disclosed herein an excimer discharge lamp that is capable of mitigating a stress concentration occurring due to a fixing method of an outer electrode, and...
2016/0225603 ION EJECTION FROM A QUADRUPOLE ION TRAP
A method of ejecting ions to be analyzed from a quadrupole ion trap in which a trapping field is created by one or more RF voltages applied to one or more...
2016/0225602 TIME-OF-FLIGHT MASS SPECTROMETRY USING MULTI-CHANNEL DETECTORS
A time-of-flight mass spectrometer (TOF-MS) utilizes a multi-channel ion detector to detect ions traveling in separate flight paths, spatially dispersed along...
2016/0225601 Miniature Ion Source of Fixed Geometry
A mass spectrometer is disclosed comprising an atmospheric pressure interface comprising a gas cone having an inlet aperture, wherein the gas cone has a first...
2016/0225600 ION SOURCE, AND MASS ANALYSIS APPARATUS INCLUDING SAME
According to one embodiment of the present invention, an ion source includes: an anode tube in which gas flowing in through one side is ionized and discharged...
2016/0225599 ION OPTICS COMPONENTS AND METHOD OF MAKING THE SAME
A method of making an ion optics component includes providing an electrically isolating substrate and machining away material of the substrate from at least...
2016/0225598 PULSED ION GUIDES FOR MASS SPECTROMETERS AND RELATED METHODS
An ion guide generates a radio frequency (RF) field to radially confine ions to an ion beam along a guide axis as the ions are transmitted through the ion...
2016/0225597 CHEMICAL ANALYZER WITH MEMBRANE
A system for analyzing an analyte is described herein. The system includes a chamber having an inlet and a semi-permeable membrane arranged to seal the inlet....
2016/0225596 Method And Apparatus For Transporting Samples In A Mass Spectrometer
A sample plate handling system for a time-of-flight mass spectrometer includes a transport chamber and a mass spectrometer chamber that is mechanically coupled...
2016/0225595 Mass Spectrometry Data Processing Apparatus and Mass Spectrometry Data Processing Method
A mass spectrometry data processing apparatus includes a data analysis unit that processes a mass spectrum of each of analysis-target areas within a...
2016/0225594 Data Independent Acquisition of Product Ion Spectra and Reference Spectra Library Matching
Systems and methods are disclosed for detecting compounds in a sample using a tandem mass spectrometer. A sample comprising a plurality of detectable compounds...
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