Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2016/0233339 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device is formed in such a manner that a first insulator, a first oxide semiconductor, and a first conductor are formed; the first conductor is...
2016/0233338 METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE
Thin film transistors are provided that include a metal oxide active layer with source and drain regions having a reduced resistivity relative to the metal...
2016/0233337 METHOD OF PREVENTING EPITAXY CREEPING UNDER THE SPACER
After forming a gate spacer on each sidewall of a sacrificial gate structure, portions of each dielectric fin cap portion underneath the gate spacer is...
2016/0233336 STRAINED CHANNEL REGION TRANSISTORS EMPLOYING SOURCE AND DRAIN STRESSORS AND SYSTEMS INCLUDING THE SAME
Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source...
2016/0233335 HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION
A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without...
2016/0233334 SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN REGIONS
A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the...
2016/0233333 SELECTOR DEVICE FOR A NON-VOLATILE MEMORY CELL
Memory cells and methods of forming memory cells are disclosed. The memory cell includes a substrate and a select transistor. The select transistor includes a...
2016/0233332 ISOLATION NLDMOS DEVICE AND A MANUFACTURING METHOD THEREFOR
An isolation NLDMOS device including: an N well and a P well adjacent to each other on an upper part of a P substrate; on the upper part of the P well are...
2016/0233331 POWER MOSFET SEMICONDUCTOR
A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of...
2016/0233330 Gated Diode in a Press-Fit Housing and an Alternator Assembly Having a Gated Diode Arranged in a Load Path
A gated diode in a press-fit housing includes a base configured to be press-fit into an opening of a diode carrier plate and including a pedestal portion with...
2016/0233329 NITRIDE POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF
A nitride power transistor comprises: a silicon substrate comprising a differently doped semiconductor composite structure for forming a space charge depletion...
2016/0233328 III GROUP NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An III group nitride semiconductor device comprises: a substrate; a nitride semiconductor layer located on the substrate; a passivation layer located on the...
2016/0233327 Group III-V Semiconductor Device with Strain-Relieving Layers
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V...
2016/0233326 HIGH ELECTRON MOBILITY TRANSISTOR
A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region...
2016/0233325 SEMICONDUCTOR DEVICE FABRICATION
There is provided a method for fabricating a semiconductor device having the following structure, and comprising the steps of growing a nucleation layer on a...
2016/0233324 INSULATED GATE BIPOLAR DEVICE
A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer and N- drift layer. There are active cells...
2016/0233323 BIPOLAR TRANSISTOR
Disclosed herein is a bipolar transistor capable of improving a current amplification rate while improving voltage resistance. A bipolar transistor is provided...
2016/0233322 METHOD FOR FABRICATING CHALCOGENIDE FILMS
A method for fabricating a chalcogenide film is presented. The method includes providing a substrate in a chamber and performing a first atomic layer...
2016/0233321 FINFET DEVICE AND METHOD FOR FABRICATING SAME
Methods are disclosed herein for fabricating integrated circuit devices, such as fin-like field-effect transistors (FinFETs). An exemplary method includes...
2016/0233320 STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the...
2016/0233319 Method and Structure for FinFET Devices
A semiconductor device and a method of forming the same are disclosed. The method includes receiving a substrate having a fin projecting through an isolation...
2016/0233318 METHODS OF FORMING A COMPLEX GAA FET DEVICE AT ADVANCED TECHNOLOGY NODES
The present disclosure provides a method of forming a semiconductor device and a semiconductor device. An SOI substrate portion having a semiconductor layer, a...
2016/0233317 METHOD OF MANUFACTURING MOS TRANSISTOR WITH STACK OF CASCADED NANOWIRES
A MOS transistor with stacked nanowires and a method of manufacturing the same. The transistor may include a stack of cascaded nanowires extending in a first...
2016/0233316 Method of Manufacturing a Spacer Supported Lateral Channel FET
A semiconductor device is manufactured by forming a plurality of trenches extending into a semiconductor material from a first main surface of the ...
2016/0233315 DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
A method of forming a fin structure that includes forming a plurality of fin structures from a bulk semiconductor substrate and forming a dielectric spacer on...
2016/0233314 STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the...
2016/0233313 METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
A method for manufacturing a MOS transistor device includes following steps. A substrate including at least an isolation structure formed therein is provided....
2016/0233312 FRINGE CAPACITANCE REDUCTION FOR REPLACEMENT GATE CMOS
A replacement metal gate transistor structure and method with thin silicon nitride sidewalls and with little or no high-k dielectric on the vertical sidewalls...
2016/0233311 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
The characteristics of a semiconductor device using a nitride semiconductor are improved. A trench which penetrates an insulating film and a barrier layer and ...
2016/0233310 Methods of Manufacturing Semiconductor Devices Including Gate Patterns with Sidewall Spacers
A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode,...
2016/0233309 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
This semiconductor device includes a substrate and a thin film transistor supported on the substrate. The thin film transistor includes a gate electrode, a...
2016/0233308 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
A semiconductor device includes a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET...
2016/0233307 SUBSTRATE FOR EPITAXIAL GROWTH, AND CRYSTAL LAMINATE STRUCTURE
A crystal laminate structure includes an epitaxial growth substrate including a .beta.-Ga.sub.2O.sub.3-based single crystal and a (010) plane or a plane...
2016/0233306 SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING...
An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the...
2016/0233305 DIRECT FORMATION OF GRAPHENE ON SEMICONDUCTOR SUBSTRATES AND STRUCTURES PREPARED THEREBY
The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming...
2016/0233304 STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the...
2016/0233303 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHODS THEREOF
The present invention provides a semiconductor structure with nanowire structures. The semiconductor structure includes a substrate, more than one first...
2016/0233302 SEMICONDUCTOR DEVICE INCLUDING A SEMICONDUCTOR SHEET UNIT INTERCONNECTING A SOURCE AND A DRAIN
A semiconductor device includes a substrate, a pair of source/drain units, and a semiconductor sheet unit. The substrate includes a well region. The...
2016/0233301 SEMICONDUCTOR STRUCTURE WITH NANOWIRE STRUCTURES AND MANUFACTURING METHOD THEREOF
The present invention provides a semiconductor structure, including a substrate, a first nanowire structure disposed on the substrate, and the first nanowire...
2016/0233300 SYSTEM FOR GLASS SHEET SEMICONDUCTOR COATING AND RESULTANT PRODUCT
A system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof...
2016/0233299 SEMICONDUCTOR DEVICE, A MICRO-ELECTRO-MECHANICAL RESONATOR AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of...
2016/0233298 Self-Aligned Gate Edge and Local Interconnect and Method to Fabricate Same
Self-aligned gate edge and local interconnect structures and methods of fabricating self-aligned gate edge and local interconnect structures are described. In...
2016/0233297 Semiconductor Device Having Shallow Trench Isolation Structure
A semiconductor device is provided, which prevents a case where the widths of word lines become uneven because of a stress developing at the border between a...
2016/0233296 DEEP TRENCH ISOLATION
An integrated semiconductor device includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region located...
2016/0233295 SiC-Based Superjunction Semiconductor Device
A semiconductor device includes a semiconductor body having a semiconductor body material with a dopant diffusion coefficient that is smaller than the...
2016/0233294 METHOD FOR CREATING THE HIGH VOLTAGE COMPLEMENTARY BJT WITH LATERAL COLLECTOR ON BULK SUBSTRATE WITH RESURF EFFECT
Complementary high-voltage bipolar transistors formed in standard bulk silicon integrated circuits are disclosed. In one disclosed embodiment, collector...
2016/0233293 A SEMICONDUCTOR WAFER AND A METHOD FOR PRODUCING THE SEMICONDUCTOR WAFER
A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers...
2016/0233292 SEMICONDUCTOR PACKAGE STRUCTURE AND SEMICONDUCTOR MANUFACTURING PROCESS
The present disclosure relates to a semiconductor package structure and a manufacturing method thereof. The semiconductor package structure comprises a first...
2016/0233291 ORGANIC LIGHTING EMITTING DISPLAY DEVICE INCLUDING LIGHT ABSORBING LAYER AND METHOD FOR MANUFACTURING SAME
A method of preparing a display device including a plurality of pixels where a plurality of gate lines cross a plurality of data lines, respectively, each of...
2016/0233290 DISPLAY PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE COMPRISING THE SAME
A display panel including: a first substrate; a second substrate opposing the first substrate; a sealing substructure on the first substrate, the sealing...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.