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Patent # Description
2016/0240699 METHOD FOR STRUCTURING LAYERS OF OXIDIZABLE MATERIALS BY MEANS OF OXIDATION AND SUBSTRATE HAVING A STRUCTURED...
The invention relates to a method for structuring layers of oxidizable materials. At least one layer, disposed on a substrate, of an oxidizable material is...
2016/0240698 SEMICONDUCTOR LIGHT RECEIVING DEVICE, OPTICAL RECEIVER MODULE AND MANUFACTURING METHOD THEREOF
Provided are a semiconductor light receiving device, an optical receiver module, and a manufacturing method thereof in which characteristics of the device are...
2016/0240697 SOLAR CELL MODULE
The solar cell module according to the present invention includes: a supporting substrate; a back electrode layer arranged on the supporting substrate; a light...
2016/0240696 PHOTOVOLTAIC MODULE AND METHOD FOR PRODUCING THE SAME
According to some embodiments in the disclosure, there is provided a photovoltaic module, including a cell slice and a photovoltaic ribbon. The cell slice has...
2016/0240695 MOS P-N JUNCTION DIODE WITH ENHANCED RESPONSE SPEED AND MANUFACTURING METHOD THEREOF
A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a central conductive...
2016/0240694 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide...
2016/0240693 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A transistor having a multi-layer structure of oxide semiconductor layers is provided in which a second oxide semiconductor layer having a crystalline...
2016/0240692 SYSTEMS AND METHODS FOR ASSEMBLING TWO-DIMENSIONAL MATERIALS
Heterostructures can include multilevel stacks with an electrical contact on a one-dimensional edge of a two-dimensional active layer. A multilevel stack can...
2016/0240691 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
A thin film transistor array substrate includes a first conductive pattern group including a gate line extending along a first direction, data lines extending...
2016/0240690 SEMICONDUCTOR DEVICE
A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with...
2016/0240689 THIN FILM TRANSISTOR
A thin film transistor is provided, and includes a gate electrode, a first gate dielectric layer, a second gate dielectric layer, a channel layer, a source...
2016/0240688 THIN FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE...
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on...
2016/0240687 MANUFACTURING METHOD AND STRUCTURE OF OXIDE THIN FILM TRANSISTOR
The present invention provides a manufacture method and a structure of an oxide thin film transistor. The manufacture method of the structure of the oxide thin...
2016/0240686 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF
A non-volatile memory including the following elements is provided. A first conductive layer and a second conductive layer are disposed on a substrate and...
2016/0240685 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the...
2016/0240684 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including...
2016/0240683 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode,...
2016/0240682 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion...
2016/0240681 Stacked Gate-All-Around FinFET and Method Forming the Same
A device includes a first semiconductor strip, a first gate dielectric encircling the first semiconductor strip, a second semiconductor strip overlapping the...
2016/0240680 SEMICONDUCTOR DEVICE HAVING A SILICON AND GERMANIUM MATERIAL FILLING A CAVITY REGION COMPRISING A NOTCH REGION...
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor...
2016/0240679 SUPPERLATTICE BUFFER STRUCTURE FOR GALLIUM NITRIDE TRANSISTORS
A transistor with a multi-strained layer superlattice (SLS) structure is provided. A first strained layer superlattice (SLS) layer is arranged over a...
2016/0240678 STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by...
2016/0240677 EPITAXIAL WAFER AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial...
2016/0240676 Reacted Conductive Gate Electrodes and Methods of Making the Same
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material....
2016/0240675 STRUCTURE AND METHOD FOR TRANSISTORS WITH LINE END EXTENSION
A method includes forming an isolation feature in a semiconductor substrate; forming a first fin-like active region and a second fin-like active region in the...
2016/0240674 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH RECESS, EPITAXIAL GROWTH AND DIFFUSION
A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode,...
2016/0240673 Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition
A method of manufacturing a semiconductor device includes etching a recess into a substrate and epitaxially growing a source/drain region in the recess. The...
2016/0240672 SEMICONDUCTOR DEVICES WITH SHAPED CAVITIES FOR EMBEDDING GERMANIUM MATERIAL AND MANUFACTURING PROCESSES THEREOF
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that...
2016/0240671 TRANSISTOR STRUCTURE WITH VARIABLE CLAD/CORE DIMENSION FOR STRESS AND BANDGAP
An apparatus including a heterostructure disposed on a substrate and defining a channel region, the heterostructure including a first material having a first...
2016/0240670 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
A semiconductor device may include the following elements: a first doped region; a second doped region, which contacts the first doped region; a third doped...
2016/0240669 SYSTEM AND METHOD FOR FABRICATING HIGH VOLTAGE POWER MOSFET
A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the...
2016/0240668 ULTRA HIGH VOLTAGE DEVICE
According to an embodiment, a semiconductor device is provided. The device includes: The second region has a greater curvature than the first region. The...
2016/0240667 Medium High Voltage MOSFET Device
A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are...
2016/0240666 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A device includes a first and a second semiconductor-layer. The second semiconductor-layer is on the first semiconductor-layer, and has a first and a second...
2016/0240665 VERTICAL TRANSISTOR AND LOCAL INTERCONNECT STRUCTURE
A first patterned stack and a second patterned stack are formed over a substrate, each of which includes a bottom semiconductor layer, a bottom dielectric...
2016/0240664 SEMICONDUCTOR DEVICE
There is provided a semiconductor device having LDMOS transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with...
2016/0240663 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes: a semiconductor substrate; a semiconductor layer disposed over the semiconductor layer; a first well region disposed in the...
2016/0240662 POWER INTEGRATED DEVICES, ELECTRONIC DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
A power integrated device includes a channel region, a source region, a drift region, and a drain region. A stacked gate includes a gate insulation layer and a...
2016/0240661 Semiconductor Device Comprising a Transistor Array and a Termination Region and Method of Manufacturing Such a...
A semiconductor device formed in a semiconductor substrate having a first main surface comprises a transistor array and a termination region. The transistor...
2016/0240660 High Voltage LDMOS Device with an Increased Voltage at Source (High Side) and a Fabricating Method Thereof
A high voltage LDMOS device having high side source voltage, an n type buried layer and a p type buried layer situated on the interface between a p type...
2016/0240659 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
An LDMOS device, comprising a substrate (202), a gate electrode (211) on the substrate (202), a buried layer area in the substrate (202), and a diffusion layer...
2016/0240658 POWER INTEGRATED DEVICES, ELECTRONIC DEVICES INCLUDING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME
A power integrated device includes a semiconductor layer having first conductivity, a source region and a drain region each having second conductivity and...
2016/0240657 SEMICONDUCTOR DEVICE HAVING BURIED LAYER
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the...
2016/0240656 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A silicon carbide semiconductor device includes a silicon carbide semiconductor layer having a main surface, the main surface of the silicon carbide...
2016/0240655 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method for manufacturing a SiC semiconductor device includes the steps of: forming an impurity region in a SiC layer; forming a first carbon layer on a...
2016/0240654 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
In order to improve the performance of a semiconductor device, a p type impurity is ion implanted into an area of an n type semiconductor film that is...
2016/0240653 Medium High Voltage MOSFET Device
A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are...
2016/0240652 FINFETS with Wrap-Around Silicide and Method Forming the Same
A device includes isolation regions extending into a semiconductor substrate, with a substrate strip between opposite portions of the isolation regions having...
2016/0240651 STRUCTURE AND FORMATION METHOD OF FINFET DEVICE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a...
2016/0240650 SEMICONDUCTOR STRUCTURE WITH EXTENDING GATE STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the...
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