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Patent # Description
2016/0240399 SUBSTRATE PROCESSING APPARATUS
A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions...
2016/0240398 Wafer Holder
A wafer holder includes a holder main body, a supporting member, and a limiting member. The holder main body has a through hole region. The supporting member...
2016/0240397 Method for Moulding and Surface Processing Electronic Components and Electronic Component Produced with this Method
The invention relates to a method for moulding and surface processing electronic components wherein a grid of electronic components is attached on a carrier;...
2016/0240396 APPARATUS FOR MANUFACTURING SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
The inventive concepts provide an apparatus for manufacturing a semiconductor package and a method for manufacturing a semiconductor package using the same....
2016/0240395 METHODS OF PROMOTING ADHESION BETWEEN UNDERFILL AND CONDUCTIVE BUMPS AND STRUCTURES FORMED THEREBY
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include...
2016/0240394 Semiconductor Device Manufacturing Method
A method for producing a semiconductor device includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin...
2016/0240393 UNDERFILL PROCESS AND PROCESSING MACHINE THEREOF
A processing machine of an underfill process comprises a carrier, an automated device, a scanning mechanism, an identifying device and a host. The carrier is...
2016/0240392 DUAL SIDED EMBEDDED DIE AND FABRICATION OF SAME BACKGROUND
Embodiments of the invention provide a method for forming a dual sided embedded die system. The method begins with starting material including a top surface...
2016/0240391 Package Structures and Method of Forming the Same
Package structures and methods of forming package structures are described. A method includes depositing and patterning a first dielectric material. The first...
2016/0240390 Multilevel Leadframe
A method for forming a multilevel leadframe for an integrated circuit is provided. A conductive sheet is etched from one side to form a thinner region within a...
2016/0240389 SELECTIVE ETCH FOR SILICON FILMS
A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to...
2016/0240388 METHOD FOR ROUGHNESS IMPROVEMENT AND SELECTIVITY ENHANCEMENT DURING ARC LAYER ETCH USING CARBON
A method of patterning a silicon containing ARC (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of...
2016/0240387 Method Of Fabricating Semiconductor Device
A method for fabricating a semiconductor device includes forming a first hard mask (HM) layer over a material layer, forming a patterned second HM layer over...
2016/0240386 Self-Aligned Multiple Spacer Patterning Process
Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a...
2016/0240385 GATE ELECTRODE MATERIAL RESIDUAL REMOVAL PROCESS
The present disclosure provides methods for removing gate electrode residuals from a gate structure after a gate electrode patterning process. In one example,...
2016/0240384 METHOD FOR ROUGHNESS IMPROVEMENT AND SELECTIVITY ENHANCEMENT DURING ARC LAYER ETCH USING HYDROGEN
A method of patterning a silicon containing ARC (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of...
2016/0240383 METHOD FOR ROUGHNESS IMPROVEMENT AND SELECTIVITY ENHANCEMENT DURING ARC LAYER ETCH VIA ADJUSTMENT OF...
A method of patterning a silicon containing ARC (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of...
2016/0240382 METHOD FOR ADJUSTING EFFECTIVE WORK FUNCTION OF METAL GATE
A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work...
2016/0240381 PROCESS FOR MOLECULAR LAYER DOPING OF GERMANIUM SUBSTRATES
A method of molecular layer doping of a germanium substrate comprises the steps of cleaning a surface of the germanium substrate to remove oxides, reacting the...
2016/0240380 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a...
2016/0240379 DEPRESSION FILLING METHOD AND PROCESSING APPARATUS
A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not...
2016/0240378 Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: forming a first...
2016/0240377 METHOD OF DEFINING POLY-SILICON GROWTH DIRECTION
The present invention provides a method of defining poly-silicon growth direction, comprising: providing a glass substrate (1); forming a buffer layer (3) on...
2016/0240376 METHOD AND APPARATUS FOR FABRICATING TWO-DIMENSIONAL LAYERED CHALCOGENIDE FILM
A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a...
2016/0240375 STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER
A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO...
2016/0240374 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered...
2016/0240373 METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE
In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a...
2016/0240372 Cobalt silicidation process for substrates comprised with a silicon-germanium layer
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming...
2016/0240371 PROTECTION METHOD FOR PROTECTING A SILICIDE LAYER
The method includes the steps of: a) providing a stack including, successively, a substrate, a silicide layer formed on the substrate, and a silicon nitride...
2016/0240370 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM
There is provided a substrate processing apparatus which includes: a substrate mounting table installed in a vacuum vessel; a gas supply part configured to...
2016/0240369 METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATES INCLUDING HEATING OF CARRIER GAS
An aspect of the present disclosure resides in a method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound...
2016/0240368 METHOD AND COMPOSITION FOR SELECTIVELY REMOVING METAL HARDMASK AND OTHER RESIDUES FROM SEMICONDUCTOR DEVICE...
An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN,...
2016/0240367 METHOD FOR FORMING FILM HAVING LOW RESISTANCE AND SHALLOW JUNCTION DEPTH
A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped...
2016/0240366 Processing of Semiconductor Devices
A method of thinning a wafer includes thinning the wafer using a grinding process. The wafer, after the grinding processing, has a first non-uniformity in...
2016/0240365 LIGHT-EMITTING SEALED BODY
In a light-emitting sealed body, a metal structure (electron emission structure) containing an easily electron-emitting material is used, so that it is not...
2016/0240364 MASS SPECTROMETER
A mass spectrometer includes: an ionization unit configured to ionize an analyte gas; a filter unit configured to allow passage of only a target ion which is a...
2016/0240363 Open Trap Mass Spectrometer
An open electrostatic trap mass spectrometer is disclosed for operation with wide and diverging ion packets. Signal on detector is composed of signals...
2016/0240362 QUANTITATION OF STRUCTURAL ISOMERS USING MALDI MS/MS
The present invention relates to a quantitative determination of structural isomers implicated in diseases, the said process is completely independent of...
2016/0240361 SYSTEM AND METHOD FOR RAPID EVAPORATIVE IONIZATION OF LIQUID PHASE SAMPLES
According to some embodiments, systems and methods for rapid evaporation of liquid phase samples are provided. The method includes directing liquid samples to...
2016/0240360 Flow Through MS3 for Improved Selectivity
Systems and methods are provided for selecting and fragmenting a first precursor ion in an MS3 experiment. One or more first excitation parameters are...
2016/0240359 Dynamic Resolution Correction of Quadrupole Mass Analyser
A method of mass spectrometry is disclosed comprising automatically correcting the mass or mass to charge ratio resolution of a quadrupole mass filter or mass...
2016/0240358 CHROMATOGRAPH MASS SPECTROMETER
A chromatograph mass spectrometer including an optimum gas pressure search controller that performs an MRM measurement for a target compound while changing a...
2016/0240357 PHYSICAL VAPOR DEPOSITION SYSTEM AND PHYSICAL VAPOR DEPOSITING METHOD USING THE SAME
A physical vapor deposition system includes a chamber, a cover plate, a pedestal, and a collimator. The cover plate is disposed on the chamber for holding a...
2016/0240356 SYSTEMS AND METHODS FOR USING MULTIPLE INDUCTIVE AND CAPACITIVE FIXTURES FOR APPLYING A VARIETY OF PLASMA...
Systems and methods for using multiple inductive and capacitive fixtures for applying a variety of plasma conditions to determine fixed parameters of a match...
2016/0240355 SYSTEM AND METHOD FOR DIFFERENTIAL ETCHING
A plasma sputtering apparatus according to one embodiment includes a chamber and a reservoir in fluidic communication with the chamber. The reservoir stores a...
2016/0240354 PLASMA ION SOURCE AND CHARGED PARTICLE BEAM APPARATUS
A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction...
2016/0240353 METHOD FOR CONTROLLING POTENTIAL OF SUSCEPTOR OF PLASMA PROCESSING APPARATUS
Disclosed is a method of suppressing abnormal discharge through a space between a space and a susceptor. A pulse-modulated high frequency wave is supplied from...
2016/0240352 PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
A plasma processing apparatus performs plasma processing on a substrate held by a carrier. The carrier includes a frame disposed around the substrate and a...
2016/0240351 PLASMA PRODUCING APPARATUS
A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an...
2016/0240350 Adjustable Mass Resolving Aperture
Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on...
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