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Patent # Description
2016/0247966 PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT BY CONNECTING FIRST AND SECOND SEMICONDUCTOR BODIES
The invention relates to a light-emitting semiconductor component, comprising--a first semiconductor body (1), which comprises an active zone (11) in which...
2016/0247965 METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING ELEMENTS, METHOD FOR MANUFACTURING...
An upper surface of a substrate is etched using a first single-particle film as a mask. The first single-particle film is constituted of first particles having...
2016/0247964 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
A light-emitting diode (LED) and a method for manufacturing the same are provided. The method includes following steps. An LED wafer is fixed on a crafting...
2016/0247963 HORIZONTAL POWER LED DEVICE AND METHOD FOR MANUFACTURING SAME
A method of manufacturing a horizontal power LED device includes constructing a light-emitting structure on a substrate, etching the light-emitting structure,...
2016/0247962 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
There is provided a method for producing a Group III nitride semiconductor light-emitting device having a low driving voltage, which is realized by steeply...
2016/0247961 METHOD FOR DESIGNING AND FABRICATING A DEVICE THAT FORCES ATOMS TO EMIT SPECTRUMS
A method for designing and fabricating a device that forces atoms to emit spectrums. The method utilizes a proton-electron pair theory and the shell orbit...
2016/0247960 Method for Fabricating a Photovoltaic Cell
A method for producing a photovoltaic cell including the following successive steps: i) providing a substrate including a p/n photovoltaic junction,...
2016/0247959 INTEGRATED THIN FILM SOLAR CELL INTERCONNECTION
Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent...
2016/0247958 LAYER TRANSFER OF FILMS UTILIZING CONTROLLED SHEAR REGION
A film of material may be formed by providing a semiconductor substrate having a surface region and a cleave region located at a predetermined depth beneath...
2016/0247957 ADDITIVE FOR PREPARING SUEDE ON POLYCRYSTALLINE SILICON CHIP AND USE METHOD THEREOF
The invention disclosed an additive for preparing suede on a polycrystalline silicon chip. The invention also provides a suede preparation liquid for preparing...
2016/0247956 Transistor Barrier-Controlled Internal Photoemission Detector
A three-terminal transistor-based radiation detector is presented which uses internal photoemission over a bias-controlled potential barrier which may be of a...
2016/0247955 DEVICE FOR DETECTING RADIATION INCLUDING AN ENCAPSULATING STRUCTURE HAVING AN IMPROVED MECHANICAL STRENGTH
The invention relates to a device for detecting electromagnetic radiation, comprising: a substrate (3); at least one thermal detector (2), placed on the...
2016/0247954 SOLAR CELL
A solar cell is provided with: a crystal substrate having n-type conductivity type as one conductivity type; an n-type semiconductor layer-that is continuously...
2016/0247953 THERMOPLASTIC COMPOSITION, IN PARTICULAR FOR PHOTOVOLTAIC MODULES
A thermoplastic composition including a mixture of three particular and different polyolefins, including one of a polyamide-grafted polyolefin having...
2016/0247952 SHEET AND MODULE STRUCTURE
A module structure is provided, which includes a front sheet, a back sheet opposite the front sheet, and a solar cell disposed between the front sheet and the...
2016/0247951 EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the...
2016/0247950 SOLAR CELL ELEMENT AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT
In a solar cell element including a silicon substrate that includes a p-type semiconductor region in a surface thereof and an electrode that is located on the...
2016/0247949 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION MODULE, AND SOLAR PHOTOVOLTAIC POWER GENERATION SYSTEM
There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing...
2016/0247948 DAMAGE BUFFER FOR SOLAR CELL METALLIZATION
A solar cell structure includes a semiconductor region disposed in or above a substrate. A damage buffer can be disposed above the semiconductor region. First...
2016/0247947 SOLAR CELL
The present disclosure provides a solar cell device comprising; a support substrate; a rear electrode layer on the substrate; a light absorption layer on the...
2016/0247945 PHOTOVOLTAIC SOLAR CELL AND METHOD FOR PRODUCING A METALLIC CONTACT-CONNECTION OF A PHOTOVOLTAIC SOLAR CELL
The invention relates to a method for producing a metallic contact-connection of a photovoltaic solar cell, including the following method steps: A providing a...
2016/0247944 SILICON PHOTONICS INTEGRATION METHOD AND STRUCTURE
Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector;...
2016/0247943 TRANSISTORS, METHODS OF FORMING TRANSISTORS AND DISPLAY DEVICES HAVING TRANSISTORS
A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active...
2016/0247942 METHOD OF INTERCALATING INSULATING LAYER BETWEEN METAL AND GRAPHENE LAYER AND METHOD OF FABRICATING...
A method includes growing a graphene layer on a metal layer, intercalating a first material between the metal layer and the graphene layer by heating the first...
2016/0247941 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
Disclosed is a thin film transistor, an array substrate and a display device. The thin film transistor includes: a gate, an active layer, a source and a drain...
2016/0247940 MANUFACTURING METHOD AND STRUCTURE OF OXIDE SEMICONDUCTOR TFT SUBSTRATE
The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to...
2016/0247939 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor...
2016/0247938 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
An SGT production method includes a first step of forming a fin-shaped semiconductor layer and a first insulating film; a second step of forming a second...
2016/0247937 THIN FILM TRANSISTOR SUBSTRATE
A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor (TFT) units, an insulating layer, a pixel...
2016/0247936 METHOD FOR MANUFACTURING POLYSILICON THIN FILM TRANSISTOR
A method for manufacturing polysilicon thin film transistor is disclosed, and the method comprises the following steps: forming a semiconductor material layer...
2016/0247935 SEMICONDUCTOR DEVICE
To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor...
2016/0247934 Semiconductor Device and Manufacturing Method Thereof
To provide a semiconductor device having a structure with which the device can be easily manufactured even if the size is decreased and which can suppress a...
2016/0247933 Method For Manufacturing Assembly Of Flexible Display Device And Assembly Of Flexible Display Device...
The present invention provides a method for manufacturing an assembly of a flexible display device and an assembly of a flexible display device manufactured...
2016/0247932 FERROELECTRIC DEVICE AND MEETHOD FOR MANUFACTURING SAME
A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as...
2016/0247931 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, a silicon film, for the memory gate electrode of a...
2016/0247930 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current...
2016/0247929 Semiconductor Device
To provide a transistor with favorable electrical characteristics. A semiconductor device includes a first insulator over a substrate; a first metal oxide over...
2016/0247928 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A transistor with high and stable electrical characteristics whose parasitic capacitance is suppressed is provided even when miniaturized. A semiconductor...
2016/0247927 TUNNEL THIN FILM TRANSISTOR WITH HETERO-JUNCTION STRUCTURE
This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero junction structure may include a junction between...
2016/0247926 MANUFACTURING METHOD AND STRUCTURE OF OXIDE SEMICONDUCTOR TFT SUBSTRATE
The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to...
2016/0247925 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between...
2016/0247924 SEMICONDUCTOR DEVICES
A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a...
2016/0247923 SEMICONDUCTOR STRUCTURE WITH TEMPLATE FOR TRANSITION METAL DICHALCOGENIDES CHANNEL MATERIAL GROWTH
A semiconductor structure includes a substrate, a buffer layer, and a two-dimensional layered material. The buffer layer is above the substrate and is formed...
2016/0247922 SEMICONDUCTOR DEVICES AND FABRICATION METHOD THEREOF
A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate; and forming a first gate structure on the...
2016/0247921 FIELD-EFFECT TRANSISTOR WITH AGGRESSIVELY STRAINED FINS
In a method for fabricating a field-effect transistor (FET) structure, forming a shallow trench isolation (STI) structure on a semiconductor substrate, wherein...
2016/0247920 FinFETs and the Methods for Forming the Same
A method includes providing a plurality of semiconductor fins parallel to each other, and includes two edge fins and a center fin between the two edge fins. A...
2016/0247919 CHANNEL LAST REPLACEMENT FLOW FOR BULK FINFETS
There is set forth herein a method including patterning a fin on a substrate of a semiconductor structure, forming dielectric material over the substrate,...
2016/0247918 FORMING STRAINED FINS OF DIFFERENT MATERIALS ON A SUBSTRATE
A method, and the resulting structure, of forming two fins with different types of strain and material on the same substrate.
2016/0247917 SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A...
2016/0247916 BIDIRECTIONAL POWER TRANSISTOR WITH SHALLOW BODY TRENCH
A bi-directional trench field effect power transistor. A layer stack extends over the top surface of the substrate, in which vertical trenches are present. An...
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