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Patent # Description
2016/0247915 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A semiconductor device includes a supporting substrate, an insulating film formed in a first region over the supporting substrate, a first semiconductor layer...
2016/0247914 Power MOSFETs and Methods for Forming the Same
Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift...
2016/0247913 TRANSISTOR
A transistor includes source region and drain regions, a channel region, a drift region, a gate, a dummy gate, a gate dielectric layer and an interconnection...
2016/0247912 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: an n-type first source region and first drain region formed in a surface of a p-type epitaxial layer; an n-type first source...
2016/0247911 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer having a main surface, the main surface being provided with a trench...
2016/0247910 SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes: a substrate; a drift layer; a current dispersion layer; a base region; a source region; trenches; a gate...
2016/0247909 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In one embodiment, a semiconductor device includes a substrate, and a gate conductor provided on the substrate. The device further includes a first insulator...
2016/0247908 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
According to an embodiment, a nonvolatile semiconductor memory device comprises: a semiconductor layer; a charge accumulation layer facing the semiconductor...
2016/0247907 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device of an embodiment includes a SiC layer having a surface, the surface inclined at an angle of 0.degree. to 10.degree. with respect to a...
2016/0247906 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between...
2016/0247905 Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-Heterojunction Fin Structure
A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin...
2016/0247904 VERTICAL POWER COMPONENT
A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity...
2016/0247903 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor...
2016/0247902 MANUFACTURING METHOD OF OXIDE FILM AND SPUTTERING APPARATUS
Provided is a method for manufacturing an oxide using a sputtering apparatus including a target unit and a substrate holder. In the target unit, a first target...
2016/0247901 SEMICONDUCTOR DEVICE HAVING A STRAINED REGION
The present disclosure provides devices and methods which provide for strained epitaxial regions. A method of semiconductor fabrication is provided that...
2016/0247900 FinFETs and Methods for Forming the Same
A FinFET and methods for forming a FinFET are disclosed. A method includes forming trenches in a semiconductor substrate to form a fin, depositing an...
2016/0247899 POWER MOSFET DEVICE STRUCTURE FOR HIGH FREQUENCY APPLICATIONS
This invention discloses a new switching device supported on a semiconductor that includes a drain disposed on a first surface and a source region disposed...
2016/0247898 HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
The high-voltage transistor device comprises a semiconductor substrate (1) with a source region (2) of a first type of electrical conductivity, a body region...
2016/0247897 Drain Extended MOS Transistors With Split Channel
A method of making a semiconductor device is provided. The method includes forming a deep well (DWELL) and a well (WELL) in a first region of a substrate, the...
2016/0247896 METHOD OF FORMING MOSFET STRUCTURE
A method includes providing a semiconductor structure that includes an epitaxial layer and a cap layer above the epitaxial layer, filling a trench above the...
2016/0247895 LATERAL PNP BIPOLAR TRANSISTOR WITH NARROW TRENCH EMITTER
A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency....
2016/0247894 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device capable of reducing an ON resistance. In the present invention, a drift layer is formed on a substrate. An...
2016/0247893 SYSTEMS AND METHODS OF FORMING AN INTERFACIAL DIPOLE LAYER
A method of forming an electronic device includes forming an oxygen scavenging layer proximate to a dielectric layer in a gate region of a field effect...
2016/0247892 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
An SGT production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a...
2016/0247891 SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCTIVE PILLAR, SEMICONDUCTOR STRUCTURE...
A semiconductor structure includes a substrate, at least one electrically conductive pillar provided over the substrate and an electrically conductive...
2016/0247890 METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS
Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at...
2016/0247889 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second fin-shaped silicon layers on a substrate, each corresponding to the dimensions of a sidewall pattern around a...
2016/0247888 NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
A U-shaped gate dielectric structure is provided that has a horizontal gate dielectric portion having a vertical thickness, and a vertical gate dielectric wall...
2016/0247887 HETEROGENEOUS LAYER DEVICE
An embodiment includes an apparatus comprising: an N layer comprising an NMOS device having a N channel, source, and drain that are all intersected by a first...
2016/0247886 SEMICONDUCTOR TEMPLATE AND MANUFACTURING METHOD THEREOF
The present invention provides a semiconductor template, comprising: a substrate; a buffer layer, disposed on a surface of the substrate and comprises a first...
2016/0247885 Stress Relieving Semiconductor Layer
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing...
2016/0247884 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device of an embodiment includes a SiC layer, a gate electrode, a gate insulating layer provided between the SiC layer and the gate electrode,...
2016/0247883 EPITAXIAL SILICON GERMANIUM FIN FORMATION USING SACRIFICIAL SILICON FIN TEMPLATES
A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins...
2016/0247882 PLANAR HETEROGENEOUS DEVICE
In an embodiment a second semiconductor layer is transferred (e.g., using layer transfer techniques) on top of a first semiconductor layer. The second layer is...
2016/0247881 MOS-BASED POWER SEMICONDUCTOR DEVICE HAVING INCREASED CURRENT CARRYING AREA AND METHOD OF FABRICATING SAME
A semiconductor device includes a substrate, a drift region, a source region, a gate region, a drain contact and a base region. The substrate is doped with a...
2016/0247880 SEMICONDUCTOR DEVICE COMPRISING A SWITCH
A semiconductor device comprising a switch and a method of making the same. The device has a layout that includes one or more rectangular unit cells. Each unit...
2016/0247879 TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an...
2016/0247878 Isolation Trench Fill Using Oxide Liner and Nitride Etch Back Technique With Dual Trench Depth Capability
An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such...
2016/0247877 PREVENTING BURIED OXIDE GOUGING DURING PLANAR AND FINFET PROCESSING ON SOI
A method for preventing damage to the insulator layer of a semiconductor device during creation of fin field effect transistor (FinFET) includes obtaining a...
2016/0247876 Integrated Circuit Devices and Methods of Manufacturing the Same
An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer...
2016/0247875 HIGH SHEET RESISTOR IN CMOS FLOW
An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with...
2016/0247874 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present invention provides an array substrate and a manufacturing method thereof. The array substrate of the present invention comprises multiple pixel...
2016/0247873 OLED ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE
Embodiments provide an OLED array substrate, a method for fabricating the same, and a display device. The present invention relates to the field of display...
2016/0247872 Organic Light Emitting Display Device
An organic light emitting display device comprises a driving transistor for driving an organic light emitting diode; a first transistor controlled by a scan...
2016/0247871 AREA SENSOR AND DISPLAY APPARATUS PROVIDED WITH AN AREA SENSOR
An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using...
2016/0247870 ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting diode (OLED) display and a method of manufacturing an OLED display are disclosed. In one aspect, the display includes a substrate and...
2016/0247869 PIXEL STRUCTURE HAVING HIGH APERTURE RATIO AND CIRCUIT
The present invention provides a pixel structure having high aperture ratio and circuit. The first gate (21), the first source/the first drain (61), and the...
2016/0247868 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is...
2016/0247867 FLEXIBLE DISPLAY
A flexible display includes a driving circuit to drive a light emitting device. The driving circuit includes a thin film transistor which includes a...
2016/0247866 COLOR DISPLAY DEVICE
The present invention provides a color display device, including a substrate, an anode formed on the substrate, a TFT array formed on the anode, a hole...
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