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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A semiconductor device includes a supporting substrate, an insulating film formed in a first region over the supporting substrate, a first semiconductor layer...
Power MOSFETs and Methods for Forming the Same
Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift...
A transistor includes source region and drain regions, a channel region, a drift region, a gate, a dummy gate, a gate dielectric layer and an interconnection...
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: an n-type first source region and first drain region formed in a surface of a p-type epitaxial layer; an n-type first source...
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer having a main surface, the main surface being provided with a trench...
SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes: a substrate; a drift layer; a current dispersion layer; a base region; a source region; trenches; a gate...
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In one embodiment, a semiconductor device includes a substrate, and a gate conductor provided on the substrate. The device further includes a first insulator...
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
According to an embodiment, a nonvolatile semiconductor memory device comprises: a semiconductor layer; a charge accumulation layer facing the semiconductor...
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device of an embodiment includes a SiC layer having a surface, the surface inclined at an angle of 0.degree. to 10.degree. with respect to a...
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between...
Group III-Nitride-Based Enhancement Mode Transistor Having a
Multi-Heterojunction Fin Structure
A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin...
VERTICAL POWER COMPONENT
A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity...
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor...
MANUFACTURING METHOD OF OXIDE FILM AND SPUTTERING APPARATUS
Provided is a method for manufacturing an oxide using a sputtering apparatus including a target unit and a substrate holder. In the target unit, a first target...
SEMICONDUCTOR DEVICE HAVING A STRAINED REGION
The present disclosure provides devices and methods which provide for strained epitaxial regions. A method of semiconductor fabrication is provided that...
FinFETs and Methods for Forming the Same
A FinFET and methods for forming a FinFET are disclosed. A method includes forming trenches in a semiconductor substrate to form a fin, depositing an...
POWER MOSFET DEVICE STRUCTURE FOR HIGH FREQUENCY APPLICATIONS
This invention discloses a new switching device supported on a semiconductor that includes a drain disposed on a first surface and a source region disposed...
HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
The high-voltage transistor device comprises a semiconductor substrate (1) with a source region (2) of a first type of electrical conductivity, a body region...
Drain Extended MOS Transistors With Split Channel
A method of making a semiconductor device is provided. The method includes forming a deep well (DWELL) and a well (WELL) in a first region of a substrate, the...
METHOD OF FORMING MOSFET STRUCTURE
A method includes providing a semiconductor structure that includes an epitaxial layer and a cap layer above the epitaxial layer, filling a trench above the...
LATERAL PNP BIPOLAR TRANSISTOR WITH NARROW TRENCH EMITTER
A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency....
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device capable of reducing an ON resistance. In the present invention, a drift layer is formed on a substrate. An...
SYSTEMS AND METHODS OF FORMING AN INTERFACIAL DIPOLE LAYER
A method of forming an electronic device includes forming an oxygen scavenging layer proximate to a dielectric layer in a gate region of a field effect...
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
An SGT production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a...
SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCTIVE
PILLAR, SEMICONDUCTOR STRUCTURE...
A semiconductor structure includes a substrate, at least one electrically conductive pillar provided over the substrate and an electrically conductive...
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC
Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at...
A semiconductor device includes first and second fin-shaped silicon layers on a substrate, each corresponding to the dimensions of a sidewall pattern around a...
NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
A U-shaped gate dielectric structure is provided that has a horizontal gate dielectric portion having a vertical thickness, and a vertical gate dielectric wall...
HETEROGENEOUS LAYER DEVICE
An embodiment includes an apparatus comprising: an N layer comprising an NMOS device having a N channel, source, and drain that are all intersected by a first...
SEMICONDUCTOR TEMPLATE AND MANUFACTURING METHOD THEREOF
The present invention provides a semiconductor template, comprising: a substrate; a buffer layer, disposed on a surface of the substrate and comprises a first...
Stress Relieving Semiconductor Layer
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing...
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device of an embodiment includes a SiC layer, a gate electrode, a gate insulating layer provided between the SiC layer and the gate electrode,...
EPITAXIAL SILICON GERMANIUM FIN FORMATION USING SACRIFICIAL SILICON FIN
A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins...
PLANAR HETEROGENEOUS DEVICE
In an embodiment a second semiconductor layer is transferred (e.g., using layer transfer techniques) on top of a first semiconductor layer. The second layer is...
MOS-BASED POWER SEMICONDUCTOR DEVICE HAVING INCREASED CURRENT CARRYING
AREA AND METHOD OF FABRICATING SAME
A semiconductor device includes a substrate, a drift region, a source region, a gate region, a drain contact and a base region. The substrate is doped with a...
SEMICONDUCTOR DEVICE COMPRISING A SWITCH
A semiconductor device comprising a switch and a method of making the same. The device has a layout that includes one or more rectangular unit cells. Each unit...
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an...
Isolation Trench Fill Using Oxide Liner and Nitride Etch Back Technique
With Dual Trench Depth Capability
An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such...
PREVENTING BURIED OXIDE GOUGING DURING PLANAR AND FINFET PROCESSING ON SOI
A method for preventing damage to the insulator layer of a semiconductor device during creation of fin field effect transistor (FinFET) includes obtaining a...
Integrated Circuit Devices and Methods of Manufacturing the Same
An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer...
HIGH SHEET RESISTOR IN CMOS FLOW
An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with...
ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present invention provides an array substrate and a manufacturing method thereof. The array substrate of the present invention comprises multiple pixel...
OLED ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE
Embodiments provide an OLED array substrate, a method for fabricating the same, and a display device. The present invention relates to the field of display...
Organic Light Emitting Display Device
An organic light emitting display device comprises a driving transistor for driving an organic light emitting diode; a first transistor controlled by a scan...
AREA SENSOR AND DISPLAY APPARATUS PROVIDED WITH AN AREA SENSOR
An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using...
ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting diode (OLED) display and a method of manufacturing an OLED display are disclosed. In one aspect, the display includes a substrate and...
PIXEL STRUCTURE HAVING HIGH APERTURE RATIO AND CIRCUIT
The present invention provides a pixel structure having high aperture ratio and circuit. The first gate (21), the first source/the first drain (61), and the...
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is...
A flexible display includes a driving circuit to drive a light emitting device. The driving circuit includes a thin film transistor which includes a...
COLOR DISPLAY DEVICE
The present invention provides a color display device, including a substrate, an anode formed on the substrate, a TFT array formed on the anode, a hole...