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Patent # Description
2016/0247715 CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a...
2016/0247714 ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES
Electron-beam (e-beam) based semiconductor device features are disclosed. In a particular aspect, a method includes performing a first lithography process to...
2016/0247713 Combined production method for separating a number of thin layers of solid material from a thick solid body
The invention relates to a method for producing layers of solid material. The production method comprises at least the following steps: Providing a solid body (2)...
2016/0247712 COMPOSITE SUBSTRATE AND METHOD FOR PRODUCING SAME
A composite substrate 1 according to the present invention comprises: a supporting substrate 10 that is formed of an insulating material; a semiconductor part...
2016/0247711 SEMICONDUCTOR DEVICE INCLUDING AIR GAPS AND METHOD OF FABRICATING THE SAME
A semiconductor device including air gaps and a method of fabricating the same. The semiconductor device in accordance with an embodiment may include a bit...
2016/0247710 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In one embodiment, a method of manufacturing a semiconductor device includes forming plugs in a first insulator, and forming a first film on the first...
2016/0247709 WAFER SUPPORT DEVICE
A wafer support device is provided. The wafer support device includes a plurality of support portions; and a bottom area located among the support portions,...
2016/0247708 SUPPORT RING WITH MASKED EDGE
A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner...
2016/0247707 ROBOT AND CONTROL METHOD OF ROBOT
A robot includes robot arm including lower arm, upper arm and hand attached to tip end portion of upper arm such that the hand is rotatable around rotational...
2016/0247706 ADAPTABLE END EFFECTOR
An adaptable end effector may include a substrate interface may be configured to support a substrate. The substrate interface may include multiple groups of...
2016/0247705 VACUUM TWEEZER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A vacuum tweezer includes: a tweezer body including a suction distal end portion that performs vacuum suction of an object to be suctioned; and a light source...
2016/0247704 LED DIE DISPERSAL IN DISPLAYS AND LIGHT PANELS WITH PRESERVING NEIGHBORING RELATIONSHIP
A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to...
2016/0247703 Semiconductor Substrate Arrangements and a Method for Forming a Semiconductor Substrate Arrangement
A semiconductor substrate arrangement includes a carrier wafer and a plurality of semiconductor substrate pieces fixed to the carrier wafer and distributed...
2016/0247702 STORAGE WAREHOUSE
A storage warehouse includes shelves, wherein first and second containers capable of being transported while placed on an attachment are stored; a warehouse-in...
2016/0247701 Container storage add-on for bare workpiece stocker
The present invention relates to apparatuses and methods to store and transfer objects, and more particularly to workpiece stocker configurations such as...
2016/0247700 SUBSTRATE PRETREATMENT METHOD AND APPARATUS
The present invention provides a substrate pretreatment method and apparatus. The method includes the steps of: step 1, providing a substrate waiting for a...
2016/0247699 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY...
An apparatus and method capable of reducing the footprint of substrate processing system. An apparatus includes a housing chamber including a housing cabinet...
2016/0247698 SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING DEVICE
This substrate processing method includes supplying a chemical liquid to an upper surface of a substrate and rinsing away the chemical liquid adhering to the...
2016/0247697 SUBSTRATE PROCESSING APPARATUS
A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions...
2016/0247696 INTERPOSER AND METHOD FOR PRODUCING THE SAME
An interposer includes a substrate, an electrically-conductive structure, at least one dielectric layer, a redistribution structure and electrode pads. The...
2016/0247695 REMOVAL OF SURFACE PASSIVATION
Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a...
2016/0247694 QUALITY EVALUATION METHOD FOR SILICON WAFER, AND SILICON WAFER AND METHOD OF PRODUCING SILICON WAFER USING THE...
After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device...
2016/0247693 METAL FILM POLISHING SLURRY COMPOSITION, AND METHOD FOR REDUCING SCRATCHES GENERATED WHEN POLISHING METAL FILM...
The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a...
2016/0247692 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is...
2016/0247691 ETCHING METHOD
In a method for etching a first region, a sequence is performed one or more times. Each time of the sequence includes a first process of forming deposits...
2016/0247690 ETCHING DEVICE, ETCHING METHOD, AND SUBSTRATE-MOUNTING MECHANISM
An etching device for etching a silicon-containing film formed on a substrate W is includes: a chamber; a substrate mounting mechanism provided in the chamber;...
2016/0247689 DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION
Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer...
2016/0247688 METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON NITRIDE
Methods of selectively etching silicon nitride on a semiconductor substrate by providing silicon to the plasma to achieve high etch selectivity of silicon...
2016/0247687 PATTERN FORMING METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
According to one embodiment, a mask material is formed on a processing layer, a mask pattern with a top surface and a bottom surface is formed on the mask...
2016/0247686 METHODS FOR FABRICATING INTEGRATED CIRCUITS USING DIRECTED SELF-ASSEMBLY INCLUDING A SUBSTANTIALLY PERIODIC...
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a substantially...
2016/0247685 DUAL FIN INTEGRATION FOR ELECTRON AND HOLE MOBILITY ENHANCEMENT
A technique for forming a semiconductor device is provided. Sacrificial mandrels are formed over a hardmask layer on a semiconductor layer. Spacers are formed...
2016/0247684 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
To improve the manufacturing yield of a semiconductor device, there is to provide a method of manufacturing a semiconductor device using a multilayer resist,...
2016/0247683 CATALYST LAYER FORMING METHOD, CATALYST LAYER FORMING SYSTEM AND RECORDING MEDIUM
A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming...
2016/0247682 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
With a method for manufacturing a semiconductor device, a semiconductor layer having a protrusion on a main face is formed. The protrusion includes an upper...
2016/0247681 METHOD FOR DOPING IMPURITIES, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Impurity elements are doped at a high concentration exceeding a thermodynamic equilibrium concentration into a solid material having an extremely small...
2016/0247680 MATERIAL PROCESSING TO ACHIEVE SUB-10NM PATTERNING
Provided is a method for increasing pattern density on a substrate comprising a structure with a patterned layer with a first composition and a sidewall and a...
2016/0247679 MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE, PATTERN GENERATING METHOD AND NONTRANSITORY COMPUTER READABLE...
According to one embodiment, stepped structure is formed on a semiconductor substrate, a processing film is formed to cover the stepped structure, a resist...
2016/0247678 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is...
2016/0247677 EPITAXIAL SILICON GERMANIUM FIN FORMATION USING SACRIFICIAL SILICON FIN TEMPLATES
A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins...
2016/0247676 METHOD FOR MANUFACTURING THIN FILM
The present invention includes the steps of: preparing a substrate; preparing a raw material including organic silane having CxHy (here, 1.ltoreq.x.ltoreq.9,...
2016/0247675 METHOD FOR MANUFACTURING THIN FILM
The present invention relates to a method for manufacturing a thin film, comprising the steps of: preparing a substrate; preparing a raw material comprising a...
2016/0247674 SELF-ALIGNED PROCESS USING VARIABLE-FLUIDITY MATERIAL
A method of forming a wide line includes forming a portion of variable-fluidity material between opposing inner walls of a pair of adjacent line portions, the...
2016/0247673 TEMPLATE FORMING METHOD, TEMPLATE, AND TEMPLATE BASE MATERIAL
According to one embodiment, a template forming method is provided. In the template forming method, a template pattern is formed on a first surface of a...
2016/0247672 METHOD AND COMPOSITION FOR REMOVING RESIST, ETCH RESIDUE, AND COPPER OXIDE FROM SUBSTRATES HAVING COPPER, METAL...
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising...
2016/0247671 Multiplexing of Ions for Improved Sensitivity
Systems and methods are provided for multiplexed precursor ion selection using a filtered noise field (FNF). Two or more different precursor ions are selected...
2016/0247670 METHOD FOR ANALYZING IONIC STRUCTURE
A method for analyzing ionic structure, including: applying a radio frequency electric field on an ion mass analyzer to cause sample ions to be excited to a...
2016/0247669 IONIZATION APPARATUS
In an ion source 3 in which a repeller electrode 32 for forming a repelling electric field that repels ions toward an ion emission port 311 is provided inside...
2016/0247668 COLLISION ION GENERATOR AND SEPARATOR
According to some embodiments, systems and methods for surface impact ionization of liquid phase and aerosol samples are provided. The method includes...
2016/0247667 SPUTTERING APPARATUS
The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The...
2016/0247666 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric...
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