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Patent # Description
2016/0254306 Method and Apparatus for Image Sensor Packaging
A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor...
2016/0254305 SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the...
2016/0254304 IMAGE SENSOR WITH EMBEDDED INFRARED FILTER LAYER
An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices...
2016/0254303 PHOTOELECTRIC CONVERSION DEVICE
A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a...
2016/0254302 IMAGING ELEMENT MOUNTING SUBSTRATE AND IMAGING DEVICE
An imaging element mounting substrate includes: an insulating base comprising insulating layers, the insulating base surface comprising an opening which is...
2016/0254301 SOLAR BLIND ULTRA VIOLET (UV) DETECTOR AND FABRICATION METHODS OF THE SAME
Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the...
2016/0254300 SENSOR FOR DUAL-APERTURE CAMERA
a sensor system for a dual-aperture camera. The sensitivity of infrared (IR) light may be increased in order to reduce the noise of an image. For example, the...
2016/0254299 SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD
A solid-state imaging device includes a plurality of substrates provided to be overlapped and a connection structure. Each of the substrates includes a...
2016/0254298 Array Substrate, Manufacturing Method Thereof, and Display Device
An array substrate, a manufacturing method thereof and a display device are disclosed. Patterns comprising a gate, a gate insulating layer and a polysilicon...
2016/0254297 MANUFACTURE METHOD OF TFT SUBSTRATE AND STURCTURE THEREOF
The present invention provides a manufacture method of a TFT substrate, and the method comprises steps of: 1, deposing a first metal layer (2) on a substrate...
2016/0254296 Array Substrate, Method for Manufacturing the Same, and Display Device
The present invention provides a method for manufacturing an array substrate comprising: sequentially forming an adhesion enhancement layer, a copper-bearing...
2016/0254295 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In a semiconductor device, a region where a channel is formed is protected. In a semiconductor device, a region protecting a region where a channel is formed...
2016/0254294 MANUFACTURE METHOD OF LTPS AND MANUFACTURE METHOD OF TFT SUBSTRATE
The present invention provides manufacture methods of LTPS and a TFT substrate. The manufacture method of LTPS comprises steps of: step 1, providing a...
2016/0254293 SUPPPORTING DEVICE, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING...
A supporting device includes a main body and a ring-shaped glue layer. The main body includes a top surface and a bottom surface opposite to the top surface....
2016/0254292 MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY APPARATUS
The present invention provides a manufacturing method of an array substrate, an array substrate and a display apparatus. The manufacturing method comprises...
2016/0254291 SEMICONDUCTOR DEVICE
A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The...
2016/0254290 Low-Temperature Polysilicon Thin Film Transistor Array Substrate and Method of Fabricating the Same, and...
The present invention provides a low-temperature polysilicon thin film transistor array substrate and a method of fabricating the same, and a display device....
2016/0254289 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE
An array substrate and manufacturing method thereof and display device are provided. The method of manufacturing the array substrate includes forming a pattern...
2016/0254288 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE
Embodiments of the present invention disclose an array substrate and a manufacturing method thereof, a display device, which relates to the display field, and...
2016/0254287 Thin-Film Transistor, Manufacturing Method Thereof, Display Substrate and Display Device
A thin-film transistor (TFT), a manufacturing method thereof, display substrate and a display device are disclosed. The TFT includes: an active layer, gate...
2016/0254286 FLEXIBLE DISPLAY PANEL
Embodiments of the present invention disclose a flexible display panel. The flexible display panel at least comprises an display area, a fanout area and a...
2016/0254285 Thin Film Transistor and Method of Fabricating the Same, Array Substrate and Method of Fabricating the Same,...
The present invention provides a thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a...
2016/0254284 ARRAY SUBSTRATE, METHOD OF PREPARING THE SAME, AND DISPLAY DEVICE
The present disclosure belongs to the field of display technologies, discloses an array substrate, a method of preparing the same, and a display device, and...
2016/0254283 ARRAY SUBSTRATE AND ITS MANUFACTURING METHOD, DISPLAY DEVICE
An array substrate includes a base substrate (10) and a gate line (11) and a data line (12) provided on the base, the gate line (11) and the data line (12)...
2016/0254282 TFT BACKPLATE STRUCTURE AND MANUFACTURE METHOD THEREOF
The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive...
2016/0254281 DISPLAY DEVICE AND ELECTRONIC DEVICE
A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more,...
2016/0254280 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
A thin-film transistor includes: an oxide semiconductor layer; an insulating layer formed above the oxide semiconductor layer; and a source electrode and a...
2016/0254279 MANUFACTURE METHOD OF TFT SUBSTRATE AND STURCTURE THEREOF
The present invention provides a manufacture method of a TFT substrate, and the method comprises steps of: step 1, forming a gate (21) on a substrate (1); step...
2016/0254278 DISPLAY DEVICE
To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between...
2016/0254277 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely...
2016/0254276 DISPLAY DEVICE
A display device according to one embodiment, includes a thin-film transistor. The thin-film transistor includes a semiconductor layer including a channel...
2016/0254275 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a peripheral common electrode line for...
2016/0254274 LIGHT-EMITTING DIODE (LED) DISPLAY PANEL, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
A light-emitting diode (LED) display panel, a manufacturing method thereof and a display device are disclosed. The LED display panel comprises a thin-film...
2016/0254273 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
The present invention provides an array substrate and a manufacturing method thereof, and a display device, which can solve the problem of RC signal delay...
2016/0254272 THREE-DIMENSIONAL (3D) SEMICONDUCTOR DEVICE
A semiconductor device includes interlayer dielectrics stacked and spaced apart from each other, a channel layer passing through the interlayer dielectrics,...
2016/0254271 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
This non-volatile semiconductor memory device includes a memory cell array including NAND cell units formed in a first direction vertical to a surface of a...
2016/0254270 METHODS OF FORMING MEMORY DEVICES WITH ISOLATION STRUCTURES
A first conductive region having a second conductivity type is formed in a first semiconductor over a first dielectric isolation region and having a first...
2016/0254269 Array Of Non-volatile Memory Cells With ROM Cells
A memory device that includes a plurality of ROM cells each having spaced apart source and drain regions formed in a substrate with a channel region...
2016/0254268 LANIO3 THIN-FILM-FORMING COMPOSITION, AND METHOD FOR FORMING LANIO3 THIN-FILM IN WHICH SAID COMPOSITION IS USED
An LaNiO.sub.3 thin-film-forming composition contains an LaNiO.sub.3 precursor, an organic solvent and a stabilizer. Also, the mixture ratio of the LaNiO.sub.3...
2016/0254267 MEMORY METAL SCHEME
A method of fabricating a memory includes forming a first portion of a first line in a first metal layer, forming a first portion of a second line in the first...
2016/0254266 CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
A capacitor structure includes a deep trench, a contact plug, a spacer and a metal-insulator-metal film. The deep trench extends into a crown oxide substrate,...
2016/0254265 THREE-DIMENSIONAL DEVICES HAVING REDUCED CONTACT LENGTH
Various embodiments comprise apparatuses and methods including a memory array having alternating levels of semiconductor materials and dielectric material with...
2016/0254264 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes preparing a light ion source, a first mask and a second mask. A side of a first region on a top...
2016/0254263 METHODS AND APPARATUSES INCLUDING AN ACTIVE AREA OF A TAP INTERSECTED BY A BOUNDARY OF A WELL
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a...
2016/0254262 III-V FinFET CMOS WITH III-V AND GERMANIUM-CONTAINING CHANNEL CLOSELY SPACED
Closely spaced III-V compound semiconductor fins and germanium-containing semiconductor fins are provided by utilizing mandrel structures for III-V compound...
2016/0254261 ADJACENT DEVICE ISOLATION
An integrated circuit (IC) device may include a first active transistor of a first-type in a first-type region. The first active transistor may have a...
2016/0254260 SEMICONDUCTOR DEVICE FOR SIMULTANEOUS OPERATION AT TWO TEMPERATURE RANGES
A semiconductor device for simultaneous operation at two temperature ranges includes a substrate, a first transistor, and a second transistor. The substrate...
2016/0254259 Semiconductor Device and Method of Manufacturing the Same
A semiconductor device including, in cross section, a semiconductor substrate; a gate insulating film on the semiconductor substrate; a gate electrode on the...
2016/0254258 FIELD EFFECT TRANSISTOR WITH INTEGRATED ZENER DIODE
One or more Zener diodes and a field effect transistor having a drain connected in series with the one or more Zener diodes are integrally formed by a...
2016/0254257 DISPLAY DEVICE
A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of...
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