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Patent # Description
2016/0260845 TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE ACTIVE TRENCH DEPTHS AND METHOD
In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is...
2016/0260844 TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE TRENCH DEPTHS AND METHOD
In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are...
2016/0260843 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE AND THIN FILM TRANSISTOR
An array substrate and a manufacturing method thereof, a display device and a thin film transistor are provided. The method includes forming a pattern that...
2016/0260842 Semiconductor Device and Fabrication Method Thereof
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode...
2016/0260841 ETSOI WITH REDUCED EXTENSION RESISTANCE
A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include...
2016/0260840 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
The present disclosure provides an array substrate, a manufacturing method thereof and a display device. The array substrate includes an active layer, a gate...
2016/0260839 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first...
2016/0260838 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes first and second insulators over a substrate, a semiconductor over the second insulator, first and second conductors over the...
2016/0260837 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, OR DISPLAY DEVICE INCLUDING THE SAME
To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a...
2016/0260836 OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE INCLUDING THE OXIDE SEMICONDUCTOR FILM, AND DISPLAY DEVICE...
A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density...
2016/0260835 TRANSISTOR, METHOD FOR MANUFACTURING TRANSISTOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
A transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor device is...
2016/0260834 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE AND DISPLAY DEVICE
A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film...
2016/0260833 EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMATION
A shallow trench isolation layer is formed on a structure comprising semiconductor fins. Portions of the fins are recessed to a level below the shallow trench...
2016/0260832 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND POWER CONVERTER
An object is to effectively reduce electric field crowding in a trench MIS structure in a semiconductor device. The semiconductor device comprises a first...
2016/0260831 DMOS TRANSISTOR WITH TRENCH SCHOTTKY DIODE
A DMOS transistor integrates a trench Schottky diode into the body contact of the transistor where the body region surrounding the Schottky metal layer forms a...
2016/0260830 SEMICONDUCTOR DEVICE
The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type...
2016/0260829 Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode...
A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure...
2016/0260828 NITRIDE SEMICONDUCTOR DEVICE HAVING ALUMINUM OXIDE FILM AND A PROCESS FOR PRODUCING THE SAME
A transistor primarily made of nitride semiconductor materials and a passivation film of Al.sub.2O.sub.3, and a process for producing the same are disclosed....
2016/0260827 SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SEMICONDUCTOR DEVICE, POWER SUPPLY APPARATUS AND HIGH-FREQUENCY...
A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed front a p-type nitride semiconductor in which...
2016/0260826 FIELD PLATE CONFIGURATION OF A SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate having a principal surface, and an insulating film formed on the principal surface and continuously...
2016/0260825 IGBT Having a Deep Superjunction Structure
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes...
2016/0260824 Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench Structure
There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a...
2016/0260823 Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure
There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift...
2016/0260822 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A...
2016/0260821 THIN FILM ACTIVATION METHOD USING ELECTRICAL ENERGY AND THIN FILM TRANSISTOR FABRICATION METHOD
The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more...
2016/0260820 FIN FIELD-EFFECT TRANSISTOR
An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a...
2016/0260819 TRANSISTOR WITH MIS CONNECTIONS AND FABRICATING PROCESS
A field-effect transistor, including a source, drain and channel formed in a semiconductor layer a gate stack placed above the channel, including a metal...
2016/0260818 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the...
2016/0260817 SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE USING FREE RADICAL STATE FLUORINE PARTICLES
A substrate having a buffer layer and a barrier layer is formed. The buffer and barrier layers have different bandgaps such that an electrically conductive...
2016/0260816 Reduced Variation MOSFET Using a Drain-Extension-Last Process
A MOSFET structure and method of manufacture that minimize threshold variations associated with statistical uncertainties of implanted source and drain...
2016/0260815 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
A non-volatile semiconductor memory device has a plurality of semiconductor areas that are arranged at intervals in a first direction on a semiconductor...
2016/0260814 SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND MORE RELIABLE ELECTRICAL CONTACTS
This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor...
2016/0260813 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor...
2016/0260812 GATE CONTACT WITH VERTICAL ISOLATION FROM SOURCE-DRAIN
A method of forming a semiconductor structure includes forming a gate structure having a first conductive material above a semiconductor substrate, gate...
2016/0260811 METHOD AND STRUCTURE TO REDUCE PARASITIC CAPACITANCE IN RAISED SOURCE/DRAIN SILICON-ON-INSULATOR DEVICES
An aspect of the invention is directed to a silicon-on-insulator device including a silicon layer on an insulating layer on a substrate; a raised source and a...
2016/0260810 SEMICONDUCTOR DEVICE
According to an embodiment, a semiconductor device includes a semiconductor layer, a first metal layer formed over the semiconductor layer, a barrier film...
2016/0260809 Semiconductor Device with First and Second Field Electrode Structures
A semiconductor device includes first and second field electrode structures that extend from a first surface into a semiconductor portion. The first field...
2016/0260808 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a...
2016/0260807 SEMICONDUCTOR DEVICE
A semiconductor device includes a diode and a semiconductor substrate. The diode includes a p-type anode region and an n-type cathode region. A lifetime...
2016/0260806 HETEROJUNCTION TUNNEL FIELD EFFECT TRANSISTOR FABRICATION USING LIMITED LITHOGRAPHY STEPS
A structure and method for fabricating a vertical heterojunction tunnel field effect transistor (TFET) using limited lithography steps is disclosed. The...
2016/0260805 GERMANIUM-ON-INSULATOR SUBSTRATE AND METHOD FOR FORMING THE SAME
Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the...
2016/0260804 ARTIFICIALLY ENGINEERED III-NITRIDE DIGITAL ALLOY
A material structure and system for generating a III-Nitride digital alloy.
2016/0260803 METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS INCLUDING A PEAK IN A BODY DOPANT...
An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a...
2016/0260802 NANOWIRE TRANSISTOR DEVICES AND FORMING TECHNIQUES
Techniques are disclosed for customization of nanowire transistor devices to provide a diverse range of channel configurations and/or material systems within...
2016/0260801 FIN FIELD-EFFCT TRANSISTORS
A method for fabricating fin field-effect transistors includes providing a semiconductor substrate; and forming a plurality of fins on a surface of the...
2016/0260800 TRENCH ISOLATION STRUCTURE HAVING ISOLATING TRENCH ELEMENTS
A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main...
2016/0260799 IGBT Having an Inter-Trench Superjunction Structure
There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes...
2016/0260798 Power Semiconductor Device Including Trench Gate Structures with Longitudinal Axes Tilted to a Main Crystal...
A semiconductor device includes a semiconductor body with a first main crystal direction parallel to a horizontal plane. Longitudinal axes of trench gate...
2016/0260797 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes first semiconductor regions of a first conductivity type spaced apart from each other and second semiconductor regions of a...
2016/0260796 DIE INCLUDING A HIGH VOLTAGE CAPACITOR
According to an embodiment of the invention there may be provided a die that may include a first capacitor layer that comprises (a) a first capacitor...
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