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TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE ACTIVE TRENCH DEPTHS AND
In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is...
TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE TRENCH DEPTHS AND METHOD
In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are...
ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE AND THIN
An array substrate and a manufacturing method thereof, a display device and a thin film transistor are provided. The method includes forming a pattern that...
Semiconductor Device and Fabrication Method Thereof
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode...
ETSOI WITH REDUCED EXTENSION RESISTANCE
A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include...
ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
The present disclosure provides an array substrate, a manufacturing method thereof and a display device. The array substrate includes an active layer, a gate...
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first...
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes first and second insulators over a substrate, a semiconductor over the second insulator, first and second conductors over the...
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, OR DISPLAY DEVICE
INCLUDING THE SAME
To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a...
OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE INCLUDING THE OXIDE
SEMICONDUCTOR FILM, AND DISPLAY DEVICE...
A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density...
TRANSISTOR, METHOD FOR MANUFACTURING TRANSISTOR, SEMICONDUCTOR DEVICE, AND
A transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor device is...
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE
AND DISPLAY DEVICE
A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film...
EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMATION
A shallow trench isolation layer is formed on a structure comprising semiconductor fins. Portions of the fins are recessed to a level below the shallow trench...
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND POWER CONVERTER
An object is to effectively reduce electric field crowding in a trench MIS structure in a semiconductor device. The semiconductor device comprises a first...
DMOS TRANSISTOR WITH TRENCH SCHOTTKY DIODE
A DMOS transistor integrates a trench Schottky diode into the body contact of the transistor where the body region surrounding the Schottky metal layer forms a...
The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type...
Semiconductor Device with Trench Gate Structure Including a Gate Electrode
and a Contact Structure for a Diode...
A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure...
NITRIDE SEMICONDUCTOR DEVICE HAVING ALUMINUM OXIDE FILM AND A PROCESS FOR
PRODUCING THE SAME
A transistor primarily made of nitride semiconductor materials and a passivation film of Al.sub.2O.sub.3, and a process for producing the same are disclosed....
SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SEMICONDUCTOR DEVICE, POWER
SUPPLY APPARATUS AND HIGH-FREQUENCY...
A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed front a p-type nitride semiconductor in which...
FIELD PLATE CONFIGURATION OF A SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate having a principal surface, and an insulating film formed on the principal surface and continuously...
IGBT Having a Deep Superjunction Structure
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes...
Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench
There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a...
Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure
There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift...
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A...
THIN FILM ACTIVATION METHOD USING ELECTRICAL ENERGY AND THIN FILM
TRANSISTOR FABRICATION METHOD
The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more...
FIN FIELD-EFFECT TRANSISTOR
An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a...
TRANSISTOR WITH MIS CONNECTIONS AND FABRICATING PROCESS
A field-effect transistor, including a source, drain and channel formed in a semiconductor layer a gate stack placed above the channel, including a metal...
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the...
SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE USING FREE RADICAL STATE
A substrate having a buffer layer and a barrier layer is formed. The buffer and barrier layers have different bandgaps such that an electrically conductive...
Reduced Variation MOSFET Using a Drain-Extension-Last Process
A MOSFET structure and method of manufacture that minimize threshold variations associated with statistical uncertainties of implanted source and drain...
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE
A non-volatile semiconductor memory device has a plurality of semiconductor areas that are arranged at intervals in a first direction on a semiconductor...
SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND
MORE RELIABLE ELECTRICAL CONTACTS
This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor...
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor...
GATE CONTACT WITH VERTICAL ISOLATION FROM SOURCE-DRAIN
A method of forming a semiconductor structure includes forming a gate structure having a first conductive material above a semiconductor substrate, gate...
METHOD AND STRUCTURE TO REDUCE PARASITIC CAPACITANCE IN RAISED
SOURCE/DRAIN SILICON-ON-INSULATOR DEVICES
An aspect of the invention is directed to a silicon-on-insulator device including a silicon layer on an insulating layer on a substrate; a raised source and a...
According to an embodiment, a semiconductor device includes a semiconductor layer, a first metal layer formed over the semiconductor layer, a barrier film...
Semiconductor Device with First and Second Field Electrode Structures
A semiconductor device includes first and second field electrode structures that extend from a first surface into a semiconductor portion. The first field...
According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a...
A semiconductor device includes a diode and a semiconductor substrate. The diode includes a p-type anode region and an n-type cathode region. A lifetime...
HETEROJUNCTION TUNNEL FIELD EFFECT TRANSISTOR FABRICATION USING LIMITED
A structure and method for fabricating a vertical heterojunction tunnel field effect transistor (TFET) using limited lithography steps is disclosed. The...
GERMANIUM-ON-INSULATOR SUBSTRATE AND METHOD FOR FORMING THE SAME
Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the...
ARTIFICIALLY ENGINEERED III-NITRIDE DIGITAL ALLOY
A material structure and system for generating a III-Nitride digital alloy.
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT HAVING FIELD EFFECT
TRANSISTORS INCLUDING A PEAK IN A BODY DOPANT...
An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a...
NANOWIRE TRANSISTOR DEVICES AND FORMING TECHNIQUES
Techniques are disclosed for customization of nanowire transistor devices to provide a diverse range of channel configurations and/or material systems within...
FIN FIELD-EFFCT TRANSISTORS
A method for fabricating fin field-effect transistors includes providing a semiconductor substrate; and forming a plurality of fins on a surface of the...
TRENCH ISOLATION STRUCTURE HAVING ISOLATING TRENCH ELEMENTS
A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main...
IGBT Having an Inter-Trench Superjunction Structure
There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes...
Power Semiconductor Device Including Trench Gate Structures with
Longitudinal Axes Tilted to a Main Crystal...
A semiconductor device includes a semiconductor body with a first main crystal direction parallel to a horizontal plane. Longitudinal axes of trench gate...
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes first semiconductor regions of a first conductivity type spaced apart from each other and second semiconductor regions of a...
DIE INCLUDING A HIGH VOLTAGE CAPACITOR
According to an embodiment of the invention there may be provided a die that may include a first capacitor layer that comprises (a) a first capacitor...