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Patent # Description
2016/0260745 DISPLAY PANEL AND DISPLAY DEVICE
A display panel comprises a TFT substrate and a display medium layer. The display medium layer is disposed on the TFT substrate. The TFT substrate comprises a...
2016/0260744 Thin-Film Transistor (TFT), Manufacturing Method Thereof, Array Substrate and Display Device
A thin-film transistor (TFT), a manufacturing method thereof, an array substrate and a display device are disclosed. The method for manufacturing the a TFT...
2016/0260743 INTEGRATED CIRCUITS WITH SELF ALIGNED CONTACT STRUCTURES FOR IMPROVED WINDOWS AND FABRICATION METHODS
Devices and methods for forming semiconductor devices with self aligned contacts for improved process windows are provided. One method includes, for instance:...
2016/0260742 FIN ISOLATION STRUCTURES FACILITATING DIFFERENT FIN ISOLATION SCHEMES
Methods and semiconductor structures formed from the methods are provided which facilitate fabricating semiconductor fin structures. The methods include, for...
2016/0260741 SEMICONDUCTOR DEVICES HAVING FINS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING FINS
In forming a finFET, a selective nitridation process is used during spacer formation on the gate to support a finer fin pitch than could be achieved using...
2016/0260740 SEMICONDUCTOR DEVICE WITH LOW BAND-TO-BAND TUNNELING
The invention includes a semiconductor device comprising an interlevel dielectric layer over a buried insulator layer over a semiconductor substrate; a source...
2016/0260739 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first...
2016/0260738 DISPLAY PANEL AND DISPLAY DEVICE
A pixel of the display panel includes a first transistor, a second transistor, a first electrode pattern and a second electrode pattern. A first drain of the...
2016/0260737 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
This invention provides an array substrate, a manufacturing method thereof and a display device, the array substrate comprises a common electrode line, a thin...
2016/0260736 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, the semiconductor film includes a first semiconductor part, a second semiconductor part, and a third semiconductor part. The first...
2016/0260735 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a semiconductor device, including: stack structures including interlayer insulating patterns and conductive line patterns, which are alternately...
2016/0260734 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In one embodiment, a semiconductor device includes a substrate, a semiconductor layer provided on the substrate, and plural insulators and plural interconnects...
2016/0260733 U-SHAPED VERTICAL THIN-CHANNEL MEMORY
A memory device, which can be configured as a 3D NAND flash memory, includes a plurality of stacks of conductive strips, including even stacks and odd stacks...
2016/0260732 VERTICAL THIN-CHANNEL MEMORY
A memory device which can be configured as a 3D NAND flash memory, includes a plurality of stacks of conductive strips, including even stacks and odd stacks...
2016/0260731 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE, AND NONTRANSITORY COMPUTER READABLE...
According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and...
2016/0260730 Embedded SONOS Based Memory Cells
Memory devices and methods for forming the same are disclosed. In one embodiment, the device includes a non-volatile memory (NVM) transistor formed in a first...
2016/0260729 SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment described below comprises agate electrode disposed sandwiching a gate insulating film, on an active area. The...
2016/0260728 Integration Of Split Gate Flash Memory Array And Logic Devices
A memory device and method including a semiconductor substrate with memory and logic device areas. A plurality of memory cells are formed in the memory area,...
2016/0260727 NONVOLATILE MEMORY CELL STRUCTURE WITH ASSISTANT GATE AND MEMORY ARRAY THEREOF
An NVM array includes a plurality of NVM cells, a plurality of word lines extending along a first direction, a plurality of bit lines extending along a second...
2016/0260726 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is...
2016/0260725 SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device, including: a vertical channel layer formed on a semiconductor substrate; first stack conductive layers stacked on the...
2016/0260724 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a pair of selection gate transistors arranged on a semiconductor layer, and memory cell...
2016/0260723 Integrated Circuitry Components, Switches, and Memory Cells
A switch includes a graphene structure extending longitudinally between a pair of electrodes and being conductively connected to both electrodes of said pair....
2016/0260722 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell array including a first selection gate, word lines and a second...
2016/0260721 CMOS COMPATIBLE RESONANT INTERBAND TUNNELING CELL
A semiconductor device includes a first diode connected transistor of a first conductivity type and a second diode connected transistor of a second...
2016/0260720 SRAM MEMORY CELL AND SRAM MEMORY
Various embodiments provide semiconductor structures and their fabrication methods. An SRAM memory cell can include at least one semiconductor structure, and...
2016/0260719 INTEGRATED CIRCUIT DEVICES INCLUDING FIN SHAPES
Integrated circuit devices are provided. An integrated circuit device includes a substrate having first and second fin-shaped Field Effect Transistor (FinFET)...
2016/0260718 SEMICONDUCTOR DEVICE
An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when...
2016/0260717 ELECTROMECHANICAL NONVOLATILE MEMORY
A semiconductor device includes an insulating layer on a semiconductor substrate, a bit line including TiAl and disposed on the insulating layer, a sidewall...
2016/0260716 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a semiconductor device. The semiconductor device may include a first pipe gate including a trench extended in a first direction. The semiconductor...
2016/0260715 INTEGRATED CIRCUIT DEVICES INCLUDING FIN ACTIVE AREAS WITH DIFFERENT SHAPES
An integrated circuit device can include a substrate having a first area and a second area and a pair of first fin-shaped active areas each having a first...
2016/0260714 FERROELECTRIC FINFET
The present disclosure provides, in a first aspect, a semiconductor device, including a semiconductor substrate and a gate structure formed over the...
2016/0260713 SERIES-CONNECTED TRANSISTOR STRUCTURE
A series-connected transistor structure includes a first source, a first channel-drain structure, a second channel-drain structure, a gate dielectric layer, a...
2016/0260712 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device has two first semiconductor regions that are arranged at intervals on a surface of a semiconductor substrate, one of the two...
2016/0260711 Bipolar Transistor Including Lateral Suppression Diode
A transistor includes an emitter of a first conductivity type, base of a second conductivity type, collector of the first conductivity type, and cathode of a...
2016/0260710 SEMICONDUCTOR DEVICE
A semiconductor device includes a diode region and an IGBT region. The diode region includes a front side anode region, an n-type diode barrier region, an...
2016/0260709 Semiconductor Devices with Trench Gate Structures in a Semiconductor Body with Hexagonal Crystal Lattice
A semiconductor device includes trench gate structures in a semiconductor body with hexagonal crystal lattice. A mean surface plane of a first surface is...
2016/0260708 MAGNETIC MULTILAYER STRUCTURE
A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack...
2016/0260707 SEMICONDUCTOR DEVICE
A semiconductor device disclosed herein includes a semiconductor substrate, a first main electrode in contact with a front surface of the semiconductor...
2016/0260706 MOM CAPACITOR CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF
A capacitor circuit formed by a plurality of capacitors using metal electrodes formed on a substrate is provided, such that the capacitance of the capacitor...
2016/0260705 SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second...
2016/0260704 High Voltage Device with a Parallel Resistor
A high voltage semiconductor device includes: a source having a first conductivity type and a drain having the first conductivity type disposed in a substrate;...
2016/0260703 POWER SEMICONDUCTOR DEVICE
A drift region has a first conductivity type. A well region is at least partially included in an interface area, has an end portion between the interface area...
2016/0260702 SEMICONDUCTOR DEVICE
A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a...
2016/0260701 ESD SNAPBACK BASED CLAMP FOR FINFET
There is set forth herein a field effect transistor (FET) configured as an ESD protection device. In one embodiment, the FET can be configured to operate in a...
2016/0260700 ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE
An electrostatic discharge protection semiconductor device includes a substrate, a gate set positioned on the substrate, a source region and a drain region...
2016/0260699 Method of Manufacturing Semiconductor Devices by Bonding a Semiconductor Disk on a Base Substrate, Composite...
A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding...
2016/0260698 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device to which a Peri Under Cell (PUC) structure is applied is disclosed. The semiconductor memory device includes a word line...
2016/0260697 Stacked Half-Bridge Package
According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage...
2016/0260696 BATCH PROCESS FABRICATION OF PACKAGE-ON-PACKAGE MICROELECTRONIC ASSEMBLIES
A microelectronic assembly can be made by joining first and second subassemblies by electrically conductive masses to connect electrically conductive elements...
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