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Patent # Description
2016/0268484 LIGHT SOURCE WITH QUANTUM DOTS
The invention provides a luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles, wherein...
2016/0268483 QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS
Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a...
2016/0268482 EMBEDDED WHITE LIGHT LED PACKAGE STRUCTURE BASED ON SOLID-STATE FLUORESCENCE MATERIAL AND MANUFACTURING METHOD...
The present invention discloses an embedded white light LED package structure based on a solid-state fluorescence material. In the present invention, the high...
2016/0268481 LIGHT EMITTING DEVICE WITH PHOSPHOR LAYER
A light emitting device includes a board, a light emitting element, a phosphor layer and a cover layer. The light emitting element is mounted on the board. The...
2016/0268480 LIGHT-EMITTING DEVICE AND ILLUMINATION APPARATUS
A light-emitting device includes: a substrate having a principal surface which includes a resist film; a first light-emitting element line mounted above the...
2016/0268479 MULTI-LAYERED TRANSPARENT ELECTRODE HAVING METAL NANO HOLE PATTERN LAYER
The present invention relates to a multi-layered transparent electrode having a metal nano hole pattern layer. The multi-layered transparent electrode may...
2016/0268478 SEMICONDUCTOR LIGHT-EMITTING DEVICE
According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The...
2016/0268477 III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME
A long-life III nitride semiconductor light emitting device and a method of producing the same. A III nitride semiconductor light-emitting device includes an...
2016/0268476 METHOD AND SYSTEM FOR EPITAXY PROCESSES ON MISCUT BULK SUBSTRATES
A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees...
2016/0268475 EMBEDDED GALLIUM-NITRIDE IN SILICON
A method and structure for integrating gallium nitride into a semiconductor substrate. The method may also include means for isolating the gallium nitride from...
2016/0268474 SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a semiconductor light emitting device includes a base body, first to third semiconductor layers, a first conductive layer, first...
2016/0268473 SCRIBING A WAFER OF SEMICONDUCTOR DEVICES
Embodiments of the invention include a method for separating a wafer including a growth substrate and a plurality of devices formed on the growth substrate and...
2016/0268472 SEPARATING A WAFER OF LIGHT EMITTING DEVICES
Embodiments of the invention are directed to a method of separating a wafer of light emitting devices. The light emitting devices are disposed in rows. The...
2016/0268471 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a...
2016/0268470 SOLAR CELL MANUFACTURING METHOD
A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor...
2016/0268469 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a method of manufacturing a semiconductor device includes a step of grinding to thin a first semiconductor wafer on which a...
2016/0268468 SINGLE CRYSTALLINE CZTSSe PHOTOVOLTAIC DEVICE
A method for fabricating a photovoltaic device includes forming a two dimensional material on a first monocrystalline substrate. A single crystal absorber...
2016/0268467 METALLIC PHOTOVOLTAICS
According to some aspects, an apparatus for converting electromagnetic radiation into electric power is provided, comprising a first layer comprising a first...
2016/0268466 SOLAR CELL MODULE
A solar cell module includes a first solar cell; and a light reflection member at least partially positioned on a side of the first solar cell in a first...
2016/0268465 SOLAR CELL MODULE FOR INCREASING LIGHT TRAPPING EFFICIENCY BY FORMING NANO PLASTIC BALLS IN LIGHT-CONCENTRATING...
A plurality of transparent nano plastic balls include a solar cell using sunlight to generate electricity, a first ethylene vinyl acetate (EVA) layer formed on...
2016/0268464 ILLUMINATION AND RADIATIVE COOLING
Aspects of the present disclosure are directed to providing and/or controlling electromagnetic radiation. As may be implemented in accordance with one or more...
2016/0268463 SOLAR CELL ASSEMBLY
A solar cell assembly including: a solar cell for generating electric power from sunlight; a cover glass for covering the solar cell; transparent shims, which...
2016/0268462 PHOTOELECTRIC CONVERSION ELEMENT
A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin...
2016/0268461 INFRARED DETECTION ELEMENT
This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A...
2016/0268460 SINGLE CRYSTALLINE CZTSSe PHOTOVOLTAIC DEVICE
A method for fabricating a photovoltaic device includes forming a two dimensional material on a first monocrystalline substrate. A single crystal absorber...
2016/0268459 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION MODULE, AND SOLAR PHOTOVOLTAIC POWER GENERATION SYSTEM
There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing...
2016/0268458 PHOTOELECTRIC CONVERSION DEVICE
There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing...
2016/0268457 ARTICLE WITH TRANSPARENT CONDUCTIVE OXIDE COATING
A solar cell includes a first substrate having a first surface and a second surface. An underlayer is located over the second surface. A first conductive layer...
2016/0268456 BACK CONTACT DESIGN FOR SOLAR CELL, AND METHOD OF FABRICATING SAME
A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over...
2016/0268455 LASER PROCESSED BACK CONTACT HETEROJUNCTION SOLAR CELLS
An interdigitated solar cell may provide a heterojunction or tunnel junction emitter and base contacts that comprise laser processed regions that electrically...
2016/0268454 Solar Cell and Method for Manufacturing Same
The present invention comprises: a supporting substrate; a rear electrode layer disposed on the supporting substrate; a light absorption layer disposed on the...
2016/0268453 ARTICLE WITH TRANSPARENT CONDUCTIVE LAYER AND METHOD OF MAKING THE SAME
A method of making a coated article includes forming a first coating over a first surface of a substrate; and forming a second coating over a second surface of...
2016/0268452 ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS
A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the...
2016/0268451 ARTICLE WITH BUFFER LAYER
An article, for example a solar cell, includes a first substrate having a first surface and a second surface. An underlayer is located over the second surface....
2016/0268450 PHOTOELECTRIC CONVERSION ELEMENT
A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin...
2016/0268449 SEMICONDUCTOR APPARATUS HAVING A TRENCH SCHOTTKY BARRIER SCHOTTKY DIODE
A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which...
2016/0268448 POWER SEMICONDUCTOR RECTIFIER WITH CONTROLLABLE ON-STATE VOLTAGE
It is the object of the invention to provide a power semiconductor rectifier with a low on-state voltage and high blocking capability. The object is attained...
2016/0268447 DATA TRANSMISSION SYSTEM
The disclosure relates to a data transmission system (100) comprising a signal line (101) and a ground line (103). A first signal path (102) is provided...
2016/0268446 TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL
Trench JFETs may be created by etching trenches into the topside of a substrate of a first doping type to form mesas. The substrate is made up of a backside...
2016/0268445 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
In a semiconductor device including a split gate type MONOS memory, and a trench capacitor element having an upper electrode partially embedded in trenches...
2016/0268444 SELF-ALIGNED METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING SAME
A thin film transistor comprises a substrate, a gate electrode formed on the substrate, an electrically insulating layer covering the gate electrode, a channel...
2016/0268443 Thin Film Transistor, Array Substrate and Method of Fabricating the Same, and Display Device
The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower...
2016/0268442 CIRCUIT SUBSTRATE MANUFACTURING METHOD
A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, includes: forming an island-shaped oxide...
2016/0268441 SEMICONDUCTOR DEVICE
To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device...
2016/0268440 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
The disclosure discloses a thin film transistor and a fabrication method thereof, an array substrate and a display device. The thin film transistor comprises...
2016/0268439 NON-VOLATILE MEMORY DEVICE
A non-volatile memory device includes a first semiconductor body extending in a first direction and a second semiconductor body arranged side by side with the...
2016/0268438 ELECTRONIC DEVICE INCLUDING A TUNNEL STRUCTURE
An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the...
2016/0268437 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide...
2016/0268436 SEMICONDUCTOR DEVICE OR MEMORY DEVICE AND DRIVING METHOD THEREOF
A highly integrated semiconductor device that holds data and includes a first semiconductor layer, a first gate insulating film over the first semiconductor...
2016/0268435 METHODS, APPARATUS AND SYSTEM FOR FABRICATING HIGH PERFORMANCE FINFET DEVICE
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor...
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