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Semiconductor Component and Method for Producing a Semiconductor Component
in a Substrate having a...
A semiconductor component includes a substrate and a gallium nitride-containing first functional element which is implemented in the surface of the substrate....
INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING SAME
An insulated gate bipolar transistor includes: a drift layer having a semiconductor substrate with N-type conductivity; a collector layer having P-type...
VERTICAL-TYPE SEMICONDUCTOR DEVICE
A buffer layer includes an n.sup.+-type first buffer region and an n.sup.+-type second buffer region. The first buffer region is provided at a first depth from...
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a...
METHOD FOR MANUFACTURING FINFET
A method of manufacturing a FinFET device is provided, comprising: a. providing a substrate (100); b. forming a fin (200) on the substrate; c. forming an...
FORMING LOW PARASITIC TRIM GATE LAST MOSFET
A method for making a fin MOSFET with substantially reduced parasitic capacitance and/or resistance is provided. The fin MOSFET includes: a patterned fin...
METHOD OF USING AN ION IMPLANTATION PROCESS TO PREVENT A SHORTING ISSUE OF
A SEMICONDUCTOR DEVICE
The present invention provides a manufacturing method of a semiconductor device, including providing a substrate, where a first dielectric layer is formed on...
POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREFOR
The present invention discloses a power Metal Oxide Semiconductor (MOS) transistor, wherein a second U-shaped trench is formed below a first U-shaped trench,...
METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAIN
JUNCTION LEAKAGE REDUCTION
A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an...
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate, a gate structure over...
Forming Highly Conductive Source/Drain Contacts in III-Nitride Transistors
In one embodiment, a method for fabricating a III-Nitride transistor on a III-Nitride semiconductor body is disclosed. The method comprises etching dielectric...
ESD PROTECTION STRUCTURE AND METHOD OF FABRICATION THEREOF
An ESD protection structure comprising a first semiconductor region of a first doping type, a second semiconductor region of the first doping type, a...
FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial...
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE THAT
INCLUDES DUMMY FINS
A method for fabricating semiconductor device is disclosed. First, a substrate, and a sacrificial mandrel is formed on the substrate, in which the sacrificial...
DIVOT-FREE PLANARIZATION DIELECTRIC LAYER FOR REPLACEMENT GATE
After formation of a silicon nitride gate spacer and a silicon nitride liner overlying a disposable gate structure, a dielectric material layer is deposited,...
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
A semiconductor device includes a substrate, a first and second source/drain regions, and a gate stack. The first and second source/drain regions are disposed...
CONDUCTIVE CAP FOR METAL-GATE TRANSISTOR
A semiconductor device includes a gate region, a conductive cap, and an interconnect. The gate region (e.g., a metal-gate transistor) includes a metal gate...
SEMICONDUCTOR DEVICES AND STRUCTURES AND METHODS OF FORMATION
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region...
ELECTRICAL CONDUCTION ELEMENT, ELECTRONIC DEVICE, AND METHOD FOR OPERATING
ELECTRICAL CONDUCTION ELEMENT
A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5)...
Method for Manufacturing a Semiconductor Device Having a Schottky Contact
A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer...
PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE
SUBSTRATE, TRANSISTORS HAVING GATE OXIDES OF...
An integrated circuit includes a first zone for a first transistor and a second zone for a second transistor. The transistors are supported by a substrate of...
A semiconductor device includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type...
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin...
A semiconductor device according to an embodiment includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate...
ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of...
SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device comprises: an n-type semiconductor substrate; a p-type anode region formed in the semiconductor substrate on its front surface side; an...
SEMICONDUCTOR-SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR-DEVICE
MANUFACTURING METHOD IN WHICH GERMANIUM...
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1.times.10.sup.16 cm.sup.-3 or...
According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region on the first semiconductor region; a...
A semiconductor device according to an embodiment includes a cell region, a gate connection region, and a cell end region between the cell region and the gate...
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC...
A semiconductor device includes an SiC substrate including a first surface and a second surface, the SiC substrate having a first SiC region of a first...
HETEROGENEOUS POCKET FOR TUNNELING FIELD EFFECT TRANSISTORS (TFETS)
Embodiments of the disclosure described herein comprise a tunneling field effect transistor (TFET) having a drain region, a source region having a conductivity...
OUTPUT CAPACITANCE REDUCTION IN POWER TRANSISTORS
Technologies are described for reduction of an output capacitance of a transistor. In some examples, spacing of source-to-drain metallization may be increased...
METHOD OF FABRICATING SEMICONDUCTOR STRUCTURES ON DISSIMILAR SUBSTRATES
Techniques are disclosed for forming a defect-free semiconductor structure on a dissimilar substrate with a multi-aspect ratio mask. The multi-aspect ratio...
After forming a first-side epitaxial semiconductor region and a second-side epitaxial semiconductor region on recessed surfaces of a semiconductor portion that...
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE THEREOF
Semiconductor devices and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a semiconductor device may include:...
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the...
SEMICONDUCTOR DEVICE FORMED WITH NANOWIRE
A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed...
Field Effect Transistors and Methods of Forming Same
Semiconductor devices and methods of forming the same are provided. A template layer is formed on a substrate, the template layer having a recess therein. A...
WIRE-LAST GATE-ALL-AROUND NANOWIRE FET
A nanowire field effect transistor (FET) device includes a first source/drain region and a second source/drain region. Each of the first and second...
NANOWIRE AND METHOD OF FABRICATING THE SAME
A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is...
According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a...
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a spacer layer and a dummy gate structure....
HIGH-VOLTAGE TRANSISTOR DEVICE
A semiconductor device is provided including a substrate, a buried oxide layer formed over the substrate, a semiconductor layer formed over the buried oxide...
A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, second semiconductor regions of a second...
MIM Capacitor and Method Forming the Same
A package includes an inorganic dielectric layer, and a capacitor. The capacitor includes a bottom electrode having a top surface in contact with a top surface...
A semiconductor device includes: a semiconductor substrate; and a thin film resistor formed over an upper surface of the semiconductor substrate, the thin film...
INTEGRATED INDUCTOR FOR INTEGRATED CIRCUIT DEVICES
A three-dimensional inductor is formed in an integrated circuit die using conductive through-body-vias which pass through the body of the die and contact one...
LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS
A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element...
ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING A SHIELD LAYER AND
METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus including a shield layer and a method of manufacturing the same are provided. The organic light-emitting display...