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Patent # Description
2016/0276471 Semiconductor Component and Method for Producing a Semiconductor Component in a Substrate having a...
A semiconductor component includes a substrate and a gallium nitride-containing first functional element which is implemented in the surface of the substrate....
2016/0276470 INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING SAME
An insulated gate bipolar transistor includes: a drift layer having a semiconductor substrate with N-type conductivity; a collector layer having P-type...
2016/0276469 VERTICAL-TYPE SEMICONDUCTOR DEVICE
A buffer layer includes an n.sup.+-type first buffer region and an n.sup.+-type second buffer region. The first buffer region is provided at a first depth from...
2016/0276468 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a...
2016/0276467 METHOD FOR MANUFACTURING FINFET
A method of manufacturing a FinFET device is provided, comprising: a. providing a substrate (100); b. forming a fin (200) on the substrate; c. forming an...
2016/0276466 FORMING LOW PARASITIC TRIM GATE LAST MOSFET
A method for making a fin MOSFET with substantially reduced parasitic capacitance and/or resistance is provided. The fin MOSFET includes: a patterned fin...
2016/0276465 METHOD OF USING AN ION IMPLANTATION PROCESS TO PREVENT A SHORTING ISSUE OF A SEMICONDUCTOR DEVICE
The present invention provides a manufacturing method of a semiconductor device, including providing a substrate, where a first dielectric layer is formed on...
2016/0276464 POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREFOR
The present invention discloses a power Metal Oxide Semiconductor (MOS) transistor, wherein a second U-shaped trench is formed below a first U-shaped trench,...
2016/0276463 METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAIN JUNCTION LEAKAGE REDUCTION
A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an...
2016/0276462 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate, a gate structure over...
2016/0276461 Forming Highly Conductive Source/Drain Contacts in III-Nitride Transistors
In one embodiment, a method for fabricating a III-Nitride transistor on a III-Nitride semiconductor body is disclosed. The method comprises etching dielectric...
2016/0276460 ESD PROTECTION STRUCTURE AND METHOD OF FABRICATION THEREOF
An ESD protection structure comprising a first semiconductor region of a first doping type, a second semiconductor region of the first doping type, a...
2016/0276459 FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial...
2016/0276458 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE THAT INCLUDES DUMMY FINS
A method for fabricating semiconductor device is disclosed. First, a substrate, and a sacrificial mandrel is formed on the substrate, in which the sacrificial...
2016/0276457 DIVOT-FREE PLANARIZATION DIELECTRIC LAYER FOR REPLACEMENT GATE
After formation of a silicon nitride gate spacer and a silicon nitride liner overlying a disposable gate structure, a dielectric material layer is deposited,...
2016/0276456 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
A semiconductor device includes a substrate, a first and second source/drain regions, and a gate stack. The first and second source/drain regions are disposed...
2016/0276455 CONDUCTIVE CAP FOR METAL-GATE TRANSISTOR
A semiconductor device includes a gate region, a conductive cap, and an interconnect. The gate region (e.g., a metal-gate transistor) includes a metal gate...
2016/0276454 SEMICONDUCTOR DEVICES AND STRUCTURES AND METHODS OF FORMATION
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region...
2016/0276453 ELECTRICAL CONDUCTION ELEMENT, ELECTRONIC DEVICE, AND METHOD FOR OPERATING ELECTRICAL CONDUCTION ELEMENT
A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5)...
2016/0276452 Method for Manufacturing a Semiconductor Device Having a Schottky Contact
A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer...
2016/0276451 PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE SUBSTRATE, TRANSISTORS HAVING GATE OXIDES OF...
An integrated circuit includes a first zone for a first transistor and a second zone for a second transistor. The transistors are supported by a substrate of...
2016/0276450 SEMICONDUCTOR DEVICE
A semiconductor device includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type...
2016/0276449 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin...
2016/0276448 SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate...
2016/0276447 ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of...
2016/0276446 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device comprises: an n-type semiconductor substrate; a p-type anode region formed in the semiconductor substrate on its front surface side; an...
2016/0276445 SEMICONDUCTOR-SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD IN WHICH GERMANIUM...
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1.times.10.sup.16 cm.sup.-3 or...
2016/0276444 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region on the first semiconductor region; a...
2016/0276443 SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment includes a cell region, a gate connection region, and a cell end region between the cell region and the gate...
2016/0276442 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC...
2016/0276441 SEMICONDUCTOR DEVICE
A semiconductor device includes an SiC substrate including a first surface and a second surface, the SiC substrate having a first SiC region of a first...
2016/0276440 HETEROGENEOUS POCKET FOR TUNNELING FIELD EFFECT TRANSISTORS (TFETS)
Embodiments of the disclosure described herein comprise a tunneling field effect transistor (TFET) having a drain region, a source region having a conductivity...
2016/0276439 OUTPUT CAPACITANCE REDUCTION IN POWER TRANSISTORS
Technologies are described for reduction of an output capacitance of a transistor. In some examples, spacing of source-to-drain metallization may be increased...
2016/0276438 METHOD OF FABRICATING SEMICONDUCTOR STRUCTURES ON DISSIMILAR SUBSTRATES
Techniques are disclosed for forming a defect-free semiconductor structure on a dissimilar substrate with a multi-aspect ratio mask. The multi-aspect ratio...
2016/0276437 ASYMMETRIC FET
After forming a first-side epitaxial semiconductor region and a second-side epitaxial semiconductor region on recessed surfaces of a semiconductor portion that...
2016/0276436 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE THEREOF
Semiconductor devices and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a semiconductor device may include:...
2016/0276435 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the...
2016/0276434 SEMICONDUCTOR DEVICE FORMED WITH NANOWIRE
A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed...
2016/0276433 Field Effect Transistors and Methods of Forming Same
Semiconductor devices and methods of forming the same are provided. A template layer is formed on a substrate, the template layer having a recess therein. A...
2016/0276432 WIRE-LAST GATE-ALL-AROUND NANOWIRE FET
A nanowire field effect transistor (FET) device includes a first source/drain region and a second source/drain region. Each of the first and second...
2016/0276431 NANOWIRE AND METHOD OF FABRICATING THE SAME
A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is...
2016/0276430 SEMICONDUCTOR DEVICE
According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a...
2016/0276429 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a spacer layer and a dummy gate structure....
2016/0276428 HIGH-VOLTAGE TRANSISTOR DEVICE
A semiconductor device is provided including a substrate, a buried oxide layer formed over the substrate, a semiconductor layer formed over the buried oxide...
2016/0276427 SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, second semiconductor regions of a second...
2016/0276426 MIM Capacitor and Method Forming the Same
A package includes an inorganic dielectric layer, and a capacitor. The capacitor includes a bottom electrode having a top surface in contact with a top surface...
2016/0276425 SEMICONDUCTOR DEVICE
A semiconductor device includes: a semiconductor substrate; and a thin film resistor formed over an upper surface of the semiconductor substrate, the thin film...
2016/0276424 INTEGRATED INDUCTOR FOR INTEGRATED CIRCUIT DEVICES
A three-dimensional inductor is formed in an integrated circuit die using conductive through-body-vias which pass through the body of the die and contact one...
2016/0276423 LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS
A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element...
2016/0276422 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING A SHIELD LAYER AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus including a shield layer and a method of manufacturing the same are provided. The organic light-emitting display...
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