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Patent # Description
2016/0284709 TRENCH TO TRENCH FIN SHORT MITIGATION
A semiconductor structure includes a replacement strap for a finFET fin that provides communication between a storage capacitor and the fin. The storage...
2016/0284708 REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE
A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer...
2016/0284707 SEMICONDUCTOR DEVICE
The semiconductor device includes a first inverter and a second inverter which is connected thereto in series. Each of the first and the second inverters...
2016/0284706 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type...
2016/0284705 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
An integrated circuit device includes a substrate, first and second fin-type active areas which extend in a first direction on the substrate, first and second...
2016/0284704 NANOWIRE OR 2D MATERIAL STRIPS INTERCONNECTS IN AN INTEGRATED CIRCUIT CELL
An integrated circuit design tool includes a cell library. The cell library includes entries for a plurality of cells, entries in the cell library including...
2016/0284703 SEMICONDUCTOR DEVICES HAVING BRIDGE LAYER AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers...
2016/0284702 SEMICONDUCTOR DEVICE
The semiconductor device including: a semiconductor layer extending in a first direction, the semiconductor layer including a pair of source/drain regions and...
2016/0284701 METHOD OF FORMING EPITAXIAL BUFFER LAYER FOR FINFET SOURCE AND DRAIN JUNCTION LEAKAGE REDUCTION
A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an...
2016/0284700 SEMICONDUCTOR DEVICES INCLUDING INCREASED AREA CONTACTS
A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances....
2016/0284699 SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME
A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower...
2016/0284698 Tipless Transistors, Short-Tip Transistors, and Methods and Circuits Therefor
An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one...
2016/0284697 SEMICONDUCTOR DEVICE
A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a...
2016/0284696 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second transistors connected to the same power supply. Each of the first and second transistors includes, under a...
2016/0284695 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE LAYOUT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A layout of a semiconductor device is stored on a non-transitory computer-readable medium. The layout includes an active area region extending in a first...
2016/0284694 CAPACITIVE DEVICE
A method of manufacturing a capacitive device. The method includes doping a substrate to form a well region, forming M shoulder portions and (M-1) trenches in...
2016/0284693 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. In the semiconductor device, the...
2016/0284692 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate and a first semiconductor element. The semiconductor substrate has a circuit core area. The first...
2016/0284691 NPN HETEROJUNCTION BIPOLAR TRANSISTOR IN CMOS FLOW
An integrated circuit formed on a silicon substrate includes an NMOS transistor with n-channel raised source and drain (NRSD) layers adjacent to a gate of the...
2016/0284690 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
An IGBT (50) includes a p.sup.+ collector region (3) and an n.sup.-- drift region (1), in which a first transistor (TR1) and a second transistor (TR2) are...
2016/0284689 ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUITS, INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR FORMING THE...
An electrostatic discharge (ESD) protection circuit includes a field oxide device in a substrate, wherein the field oxide device is coupled between an...
2016/0284688 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring...
2016/0284687 ULTRA HIGH VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION DEVICE WITH CURRENT GAIN
A semiconductor device includes a semiconductor substrate. A first semiconductor region is over a portion of the semiconductor substrate to a first depth. A...
2016/0284686 Semiconductor Arrangement With Protection Circuit
A semiconductor arrangement (10) with an electrostatic discharge (ESD) protection circuit is disclosed. The semiconductor arrangement (10) comprises a first...
2016/0284685 SEMICONDUCTOR LIGHT EMITTING ELEMENT
According to one embodiment, a semiconductor light emitting element includes a base body, first to sixth semiconductor layers, a first conductive layer, and a...
2016/0284684 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
A semiconductor device may include a first doped region, a second doped region, two fin members, and an isolation member. The first doped region may have a...
2016/0284683 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AND ELEVATOR
A semiconductor device according to an embodiment includes a plurality of circuit units, and each of the circuit units includes, a first electrode, a second...
2016/0284682 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AND ELEVATOR
A semiconductor device according to an embodiment includes a plurality of circuit units each including a substrate, a first electrode on a first side of the...
2016/0284681 Systems and Methods for a Sequential Spacer Scheme
The present disclosure describes methods for transferring a desired layout into a target layer. The method includes a step of forming a spacer, having a second...
2016/0284680 SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS
A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate,...
2016/0284679 Method for Producing Optoelectronic Semiconductor Devices and Optoelectronic Semiconductor Device
A method for producing a plurality of optoelectronic semiconductor devices is provided. A number of semiconductor chips are fastened on an auxiliary support....
2016/0284678 LED PACKAGE
An LED package includes: a substrate having a loading surface, a mounting surface and a pair of concave portions formed at both ends of the substrate, wherein...
2016/0284677 Package on Package (PoP) Bonding Structures
Various embodiments of mechanisms for forming through package vias (TPVs) with multiple conductive layers and/or recesses in a die package and a package on...
2016/0284676 Molded Underfilling for Package on Package Devices
Presented herein are a package-on-package device having a molded underfill and a method for forming the same, the method comprising applying a package mount...
2016/0284675 SEMICONDUCTOR DIE ASSEMBLY
A semiconductor die assembly having a solderball wirebonded to a substrate. As an example, the semiconductor die assembly may include the solderball attached...
2016/0284674 LIGHTING DEVICE
The present disclosure provides a lighting device comprising: a reflective element layer; an optical resin layer formed on the reflective element layer; a...
2016/0284673 FULL-COLOR LIGHT EMITTING DIODE (LED) DISPLAY PANEL, METHOD OF MANUFACTURING FULL-COLOR LED DISPLAY PANEL,...
A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific...
2016/0284672 THERMAL VIAS DISPOSED IN A SUBSTRATE PROXIMATE TO A WELL THEREOF
An apparatus relates generally to a three-dimensional stacked integrated circuit. In such an apparatus, the three-dimensional stacked integrated circuit has at...
2016/0284671 Integrated Circuit Assembly and Method of Making
An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first...
2016/0284670 3DIC Packages with Heat Dissipation Structures
A package includes a first die and a second die underlying the first die and in a same first die stack as the first die. The second die includes a first...
2016/0284669 PACKAGE-ON-PACKAGE SEMICONDUCTOR DEVICE
Some embodiments relate to a semiconductor device. The semiconductor device includes a substrate and a first die coupled to a top surface of the substrate. A...
2016/0284668 SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor package structure and a method for manufacturing the same are provided. The semiconductor package structure comprises a substrate, a first...
2016/0284667 INTERCONNECT STRUCTURES FOR WAFER LEVEL PACKAGE AND METHODS OF FORMING SAME
Representative methods are disclosed for fabricating device packages having a plurality of dies, a molding compound extending along sidewalls of the plurality...
2016/0284666 PACKAGE SUBSTRATE AND PACKAGE STRUCTURE USING THE SAME
A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a...
2016/0284665 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device package includes a substrate, a first electrical component, a second electrical component, and a conductive frame disposed on a top...
2016/0284664 Method for Producing a Circuit Carrier Arrangement Having a Carrier which has a Surface Formed by an...
According to a method for producing a circuit carrier arrangement, a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix...
2016/0284663 CHIP PACKAGE ASSEMBLY AND MANUFACTURING METHOD THEREOF
In one embodiment, a chip package assembly can include: a first substrate at a bottom layer, the first substrate having a first surface and a second surface...
2016/0284662 BONDING APPARATUS
A bonding apparatus bonds a plurality of device chips on a plurality of electrode pads that are provided to a surface of a substrate. The bonding apparatus...
2016/0284661 ELECTRONIC DEVICE AND METHOD FOR PRODUCTION
An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper...
2016/0284660 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer, an electrode layer arranged on the semiconductor layer, a crack starting point layer arranged above the...
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