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Patent # Description
2016/0293790 METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON
A method of growing a semiconductor film including the following steps: providing a substrate, depositing a metal thin film on the substrate, depositing an...
2016/0293789 VAPOR DEPOSITION EQUIPMENT INCLUDING A SELENIZATION PROCESS FOR FABRICATING CIGS FILM
The present disclosure relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga linear vapor...
2016/0293788 SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SAME
The present invention pertains to a semiconductor light-receiving element and a method for manufacturing the same, enabling operation in a wide wavelength...
2016/0293787 Nanostructured window layer in solar cells
A solar cell has a nanostructured window layer with planar p-n junction geometry. Preferably, metal grid mesas are used to provide lateral conductance and good...
2016/0293786 STRESS-INDUCED BANDGAP-SHIFTED SEMICONDUCTOR PHOTOELECTROLYTIC/PHOTOCATALYTIC/PHOTOVOLTAIC SURFACE AND METHOD...
Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania...
2016/0293785 SOLAR CELL AND MANUFACTURING METHOD OF BACK ELECTRODES THEREOF
A solar cell and manufacturing method of back electrodes thereof are disclosed. The method includes a step of implementing a screen printing process to a...
2016/0293784 COMPOSITE STATION AND METHOD OF DRILLING AND FIXING FOR THE CONTINUOUS PRODUCTION OF A CONDUCTIVE BACKSHEET...
Composite operating station and method of drilling and fixing for the continuous production of conductive backsheets with an integrated encapsulating and...
2016/0293783 SEMICONDUCTOR NANOPARTICLE DISPERSION, PHOTOELECTRIC CONVERSION ELEMENT, AND IMAGE PICKUP DEVICE
A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal...
2016/0293782 GLASS UNIT
A glass unit includes an energy collecting layer attached to a light directing device for collecting a light energy from the light directing device, and an...
2016/0293781 THREE DIMENSIONAL ANTI-REFLECTION NANOCONE FILM
Disclosed are three-dimensional nanocone film layers and associated devices. The nanocone film layers exhibit desirable properties such as anti-reflection,...
2016/0293780 METHOD FOR PRODUCING OPTICAL COMPONENT, OPTICAL COMPONENT, AND OPTICAL DEVICE
A method for producing an optical component includes presenting a laminate and separating a second layer from a substrate. In presenting the laminate, the...
2016/0293779 MOS CAPACITORS STRUCTURES FOR VARIABLE CAPACITOR ARRAYS AND METHODS OF FORMING THE SAME
A capacitor structure is described. A capacitor structure including a substrate; a source/drain region formed in the substrate to form an active area having an...
2016/0293778 MOS CAPACITORS FLOW TYPE DEVICES AND METHODS OF FORMING THE SAME
A capacitor structure is described. The capacitor structure includes a substrate; a source/drain region formed in the substrate to form an active area, the...
2016/0293777 HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
The semiconductor drift device comprises a deep well of a first type of electrical conductivity (1) provided for a drift region in a substrate of semiconductor...
2016/0293776 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
An object is to provide a reliability-improved semiconductor device having a MONOS memory that rewrites data by injecting carriers into a charge storage...
2016/0293775 SEMICONDUCTOR DEVICE
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be...
2016/0293774 NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited...
2016/0293773 Semiconductor Device
To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with...
2016/0293772 TRANSISTOR AND FABRICATION METHOD THEREOF
A method for fabricating a transistor is provided. The method includes providing a semiconductor substrate; and forming at least a nanowire suspending in the...
2016/0293771 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, ARRAY SUBSTRATE AND ITS MANUFACTURING METHOD, AND DISPLAY DEVICE
A thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The thin film...
2016/0293770 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
A thin film transistor (TFT) includes a semiconductive layer, a first inter-layer drain (ILD) layer, a second ILD layer, and at least one contact hole passing...
2016/0293769 HIGH MOBILITY STABILE METAL OXIDE TFT
A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the...
2016/0293768 SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other...
2016/0293767 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor...
2016/0293766 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is...
2016/0293765 SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTOR STRUCTURES
A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film...
2016/0293764 MOCVD GROWTH OF HIGHLY MISMATCHED III-V CMOS CHANNEL MATERIALS ON SILICON SUBSTRATES
Embodiments of the present disclosure generally relate to a semiconductor device including layers of group III-V semiconductor materials. In one embodiment,...
2016/0293763 SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTORS
A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure...
2016/0293762 FinFET with High Mobility and Strain Channel
An integrated circuit device includes a fin having a gate area beneath a gate electrode structure, a source/drain region disposed beyond ends of the fin, and a...
2016/0293761 FINFETS HAVING STRAINED CHANNELS, AND METHODS OF FABRICATING FINFETS HAVING STRAINED CHANNELS
Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a...
2016/0293760 TENSILE SOURCE DRAIN III-V TRANSISTORS FOR MOBILITY IMPROVED N-MOS
An n-MOS transistor device and method for forming such a device are disclosed. The n-MOS transistor device comprises a semiconductor substrate with one or more...
2016/0293759 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ANTENNA SWITCH MODULE
Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the ...
2016/0293758 SEMICONDUCTOR STRUCTURE HAVING A JUNCTION FIELD EFFECT TRANSISTOR AND A HIGH VOLTAGE TRANSISTOR AND METHOD FOR...
The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples...
2016/0293757 INTEGRATED CIRCUIT PRODUCT COMPRISING LATERAL AND VERTICAL FINFET DEVICES
One example of a novel integrated circuit product disclosed herein includes, among other things, a lateral FinFET device comprising a first gate structure...
2016/0293756 VERTICAL TUNNELING FINFET
A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends...
2016/0293755 SEMICONDUCTOR PACKAGING STRUCTURE AND SEMICONDUCTOR POWER DEVICE THEREOF
A semiconductor packaging structure includes a chip, a first pin, a second pin, and a third pin. The chip includes a first surface, a second surface, a first...
2016/0293754 Method of Manufacturing a Trench FET Having a Merged Gate Dielectric
In one implementation, a method for fabricating a trench FET includes providing a semiconductor substrate including a drain region and a drift zone over the...
2016/0293753 SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD...
A silicon carbide semiconductor device includes a silicon carbide layer 32 of a first conductivity type, a silicon carbide layer 36 of a second conductivity...
2016/0293752 Semiconductor Device Comprising Auxiliary Trench Structures and Integrated Circuit
An embodiment of a semiconductor device comprises a trench transistor cell array in a semiconductor body. The semiconductor device further comprises an edge...
2016/0293751 Semiconductor Device with Gate Fins
A semiconductor device includes gate fins extending from a first surface into a semiconductor portion. The gate fins include gate electrodes and are arranged...
2016/0293750 SEMICONDUCTOR DEVICES INCLUDING A FINFET
A semiconductor device includes an active fin structure extending in a first direction, the active fin structure including protruding portions divided by a...
2016/0293749 SEMICONDUCTOR DEVICES HAVING A SPACER ON AN ISOLATION REGION
A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern...
2016/0293748 FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS
A method including patterning a continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle...
2016/0293747 SEMICONDUCTOR DEVICES WITH FIELD PLATES
A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of...
2016/0293746 SEMICONDUCTOR DEVICE
The semiconductor device has a barrier layer formed on a channel layer, an n type diffusion preventing layer formed on the barrier layer and containing...
2016/0293745 POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A method for forming a power semiconductor device is provided. The method includes providing a substrate having a first surface and a second surface; and...
2016/0293744 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
A semiconductor device including: a P-type base region provided; an N-type emitter region provided inside the P-type base region; a P-type collector region...
2016/0293743 Power Semiconductor Devices, Structures, and Related Methods
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite...
2016/0293742 SEMICONDUCTOR DEVICE HAVING BURIED REGION BENEATH ELECTRODE AND METHOD TO FORM THE SAME
A semiconductor device and a process to form the same are disclosed. The semiconductor device includes a support, an active semiconductor stack including a...
2016/0293741 SPIN FILTER DEVICE, METHOD FOR ITS MANUFACTURE AND ITS USE
The present invention relates to a method and a device for providing a current of spin-polarised electrons. More particularly, the present invention is suited...
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